Resolving Nonlinear Recombination Dynamics in Semiconductors via Ultrafast Excitation Correlation Spectroscopy: Photoluminescence versus Photocurrent Detection
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Theory predicts that a large spontaneous electric polarization and concomitant inversion symmetry breaking in GeSe monolayers result in a strong shift current in response to their excitation in the visible range. Shift current is a coherent displacement of electron density on the order of a lattice constant upon above-bandgap photoexcitation. A second-order nonlinear effect, it is forbidden by the inversion symmetry in the bulk GeSe crystals. In our paper, we use terahertz (THz) emission spectroscopy to demonstrate that ultrafast photoexcitation with wavelengths straddling both edges of the visible spectrum, 400 and 800 nm, launches a shift current in the surface layer of a bulk GeSe crystal, where the inversion symmetry is broken. The direction of the surface shift current determined from the observed polarity of the emitted THz pulses depends only on the orientation of the sample and not on the linear polarization direction of the excitation. Strong absorption by the low-frequency infrared-active phonons in the bulk of GeSe limits the bandwidth and the amplitude of the emitted THz pulses. We predict that reducing GeSe thickness to a monolayer or a few layers will result in a highly efficient broadband THz emission. Experimental demonstration of THz emission by the surface shift current in bulk GeSe crystals puts this 2D material forward as a candidate for next-generation shift current photovoltaics, nonlinear photonic devices, and THz sources.
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Organometal halide perovskite semiconductors have emerged as promising candidates for optoelectronic applications because of the outstanding charge carrier transport properties, achieved with low-temperature synthesis. In this paper, we present highly sensitive sub-bandgap external quantum efficiency (EQE) measurements of Au/spiro-OMeTAD/CH 3 NH 3 Pb(I 1–x Br x ) 3 /TiO 2 /FTO/glass photovoltaic devices. The room-temperature spectra show exponential band tails with a sharp onset characterized by low Urbach energies (E u ) over the full halide composition space. The Urbach energies are 15–23 meV, lower than those for most semiconductors with similar bandgaps (especially with E g > 1.9 eV). Intentional aging of CH 3 NH 3 Pb(I 1–x Br x ) 3 for up to 2300 h, reveals no change in E u , despite the appearance of the PbI 2 phase due to decomposition, and confirms a high degree of crystal ordering. Moreover, sub-bandgap EQE measurements reveal an extended band of sub-bandgap electronic states that can be fit with one or two point defects for pure CH 3 NH 3 PbI 3 or mixed CH 3 NH 3 Pb(I 1–x Br x ) 3 compositions, respectively. Finally, the study provides experimental evidence of defect states close to the midgap that could impact photocarrier recombination and energy conversion efficiency in higher bandgap CH 3 NH 3 Pb(I 1–x Br x ) 3 alloys.
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Photovoltaic devices based on organic semiconductors require charge-separating networks (bulk heterojunctions) for optimal performance. Here we report on the fabrication of organic-inorganic photovoltaic devices with tailored (n-type) CdSe nanorod arrays aligned perpendicularly to the substrate. The nanorod lengths varied from 58 ± 12 to 721 ± 15 nm, while the diameters and inter-rod spacings were kept constant at 89.5 ± 7.5 and 41.3 ± 9.9 nm, respectively. Short-circuit densities improved linearly with nanorod length, resulting in power conversion efficiencies of up to 1.38% for cells with nanorods 612 ± 46 nm long. Notably, the cell’s efficiency was dominated by exciton generation in the CdSe nanorods.
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In the presence of Mn impurities in relatively small concentrations (2.3%) the photoelectric current of CdSe QDSCCs increases by up to 190%. We propose an electron tunneling mechanism from the quantum dot LUMO state to the Zn 2 SnO 4 semiconductor photoanode.