Thin film GaAs photovoltaic solar energy cells
Fabrication process for thin film gallium arsenide photovoltaic solar energy cells
SOLAR ENERGY↗
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Thin-film GaAs photovoltaic solar energy cells Final report
Thin film gallium arsenide photovoltaic solar cells
Crossley, P. A.↗
Polymer Substrates For Lightweight, Thin-Film Solar Cells
Substrates survive high deposition temperatures. High-temperature-resistant polymers candidate materials for use as substrates of lightweight, flexible, radiation-resistant solar photovoltaic cells. According to proposal, thin films of copper indium diselenide or cadmium telluride deposited on substrates to serve as active semiconductor layers of cells, parts of photovoltaic power arrays having exceptionally high power-to-weight ratios. Flexibility of cells exploited to make arrays rolled up for storage.
Lewis, Carol R.↗
Plasma Etching Improves Solar Cells
Etching front surfaces of screen-printed silicon photovoltaic cells with sulfur hexafluoride plasma found to increase cell performance while maintaining integrity of screen-printed silver contacts. Replacement of evaporated-metal contacts with screen-printed metal contacts proposed as one way to reduce cost of solar cells for terrestrial applications.
Bunyan, S. M.↗
InGaAsSb/GaSb thermophotovoltaic cells
AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In(1 - x)Ga(x)As(1 -y)Sb(y) alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x, y); and is closely lattice-matched to the GaSb substrate The use of the quaternary alloy, as opposed to a ternary alloy - such as, for example, InGaAs/InP - permits low bandgap devices optimized for 1000 to 1500 C thermal sources with, with at the time, near-exact lattice matching to the GaSb substrate. Lattice-matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. For bandgaps of 0.52 eV,Fo internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/sq cm is 0.220 volts and 0.260 V for current densities of 2 A/sq cm. Fill factors of 56% have also been measured. These preliminary results lead to the conclusion that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1000 to 1500 C source temperatures.
Mauk, M. G.↗
InGaAsSb/GaSb thermophotovoltaic cells
AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a tvo-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate The (direct) bandgap of the In(1-x)Ga(x)As(1-y)Sb(y) alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy as opposed to a ternary alloy -- such as, for example, InGaAs/InP -- permits low bandgap devices optimized for 1000 to 1500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice-matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm(exp 2) is 0.220 volts and 0.260 V for current densities of 2 A/cm(exp 2). Fill factors of 56% have been measured at 60 mA/cm(exp 2). However as current density increases there is some decrease in fill factor. Our results to date snow that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1000 to 1500 C source temperatures.
Shellenbarger, Z. A.↗
Window structure for passivating solar cells based on gallium arsenide
Passivated gallium arsenide solar photovoltaic cells with high resistance to moisture and oxygen are provided by means of a gallium arsenide phosphide window graded through its thickness from arsenic rich to phosphorus rich.
Barnett, Allen M.↗
Study of thin film large area photovoltaic solar energy converter First quarterly report, 25 Oct. 1965 - 24 Jan. 1966
Cadmium sulfide thin film photovoltaic cell for large area solar energy converter
ENERGY CONVERTER↗
Impurity photovoltaic effect in cadmium sulfide
Impurity levels in photovoltaic cells fabricated by evaporating thin copper layer on low resistivity single crystal n-type cadmium sulfide
CADMIUM SULFIDE↗
Elastomer Encapsulant for Solar-Cell Arrays
Butyl acrylate syrups useful potting compounds for encapsulating photovoltaic cells in modular arrays. Material pourable liquid pumped into module, then cured to rubbery consistency. Cured material is thermoset elastomer highly transparent, low cost, flexible and with good low-temperature properties.
Baum, B.↗
Annular Arrays Of Solar Cells For Spinning Spacecraft
Report proposes annular arrays of solar photovoltaic cells installed on spin-stabilized spacecraft. Annular array faces Sun. Typical array consists of two stacked annuli of solar cells: one annulus fixed about spin axis, while other divided into deployable sectors mounted on dual swing arms and stowed by folding them atop fixed annulus. Once released, deployable sectors swing outward under spring or centrifugal force and expose fixed array so it generates additional power.
Spilker, Thomas R.↗
Strained quantum well photovoltaic energy converter
An indium phosphide photovoltaic cell is provided where one or more quantum wells are introduced between the conventional p-conductivity and n-conductivity indium phosphide layer. The approach allows the cell to convert the light over a wider range of wavelengths than a conventional single junction cell and in particular convert efficiently transparency losses of the indium phosphide conventional cell. The approach hence may be used to increase the cell current output. A method of fabrication of photovoltaic devices is provided where ternary InAsP and InGaAs alloys are used as well material in the quantum well region and results in an increase of the cell current output.
Freundlich, Alexandre↗
Wet-Etching of Acoustically Spalled GaAs for Substrate Reuse
Acoustic spalling is a promising technique for substrate reuse in the fabrication of gallium arsenide (GaAs) photovoltaic cells. However, the acoustic spalling process can leave the substrate with areas of rough surface morphology that can interfere with subsequent cell growth and processing. In this work, we investigate the use of wet etchants to smooth the surface of acoustically spalled GaAs substrates. We evaluated six different etchants. Of those tested, an 8:1:1 mixture of sulfuric acid, hydrogen peroxide, and water at 30 degrees C and a moderate stirring rate showed the greatest roughness reduction per mass loss while producing the desired morphology. This etchant was then applied to an acoustically spalled 2-inch GaAs wafer. A single-junction GaAs cell was then grown via metalorganic vapor-phase epitaxy on this substrate, an acoustic spalled substrate without a smoothing etch, and an epi-ready substrate. Use of the 8:1:1 H2SO4:H2O2:H2O etchant produced cells an average efficiency of 12.8% as compared to that of 2.0% grown on the unetched acoustically spalled substrate and 16.3% grown on the epi-ready substrate. The results of this work demonstrate that wet etching is a viable method for smoothing the surface of spalled GaAs substrates, paving the way for substrate reuse via acoustic spalling at efficiencies that approach growth on epi-ready substrates.
etching↗
Employing a Narrow-Band-Gap Mediator in Ternary Solar Cells for Enhanced Photovoltaic Performance
Ternary organic solar cells (OSCs) provide a convenient and effective means to further improve the power conversion efficiency (PCE) of binary ones via composition control. However, the role of the third component remains to be explored in specific binary systems. Herein, we report ternary blend solar cells by adding the narrow-band-gap donor PCE10 as the mediator into the PBDB-T:IDTT-T binary blend system. The extended absorption, efficient fluorescence resonance energy transfer, enhanced charge dissociation, and induced tighter molecular packing of the ternary blend films enhance the photovoltaic properties of devices and deliver a champion PCE of 10.73% with an impressively high open-circuit voltage (VOC) of 1.03 V. Good miscibility and similar molecular packing behavior of the components guarantee the desired morphology in the ternary blend films, leading to solar cell devices with over 10% PCEs at a range of compositions. Our results suggest that ternary systems with properly aligned energy levels and overlapping absorption among the components hold great promises to further enhance the performance of corresponding binary ones.
14 SOLAR ENERGY↗
Inverted Metamorphic AlGaInAs/GaInAs Tandem Thermophotovoltaic Cell Designed for Thermal Energy Grid Storage Application
We demonstrate an inverted metamorphic multijunction (IMM) photovoltaic cell comprising lattice-mismatched 1.2 eV AlGaInAs and 1.0 eV GaInAs junctions optimized for high-temperature thermophotovoltaic (TPV) applications. This device differs from traditional IMM solar cells because the mismatched junctions are grown at a single lattice constant. This architecture enables removal of the compositionally graded buffer that otherwise filters light from the junctions below and absorbs sub-bandgap light via free-carrier absorption. Sub-bandgap absorption dramatically reduces the efficiency of TPV systems using high reflectivity cells to enable band edge spectrum filtering. Three components required development to enable this device: (1) a lattice-mismatched 1.2 eV AlGaInAs junction, (2) a metamorphic contact layer grown after the graded buffer, and (3) a transparent tunnel junction that sits in front of the 1.0 eV GaInAs junction. Growth conditions that minimize oxygen defect incorporation maximize AlGaInAs cell quality, enabling a 0.41 V bandgap open circuit voltage offset at 22 mA/cm2 under AM1.5D. A mismatched GaInAs:Se layer is developed as a low resistance contact. Lastly, we develop a GaAsSb:C/GaInP:Se tunnel junction suitable for high-power densities with more transparency than the GaAsSb:C/GaInAs:Se structure used in past IMM cells. We characterize the tandem device under a high-intensity spectrum that approximates the emission from a 2150°C blackbody radiator and deduce a projected ideal TPV efficiency of 39.9% at ~30% of the blackbody irradiance and 36% ideal TPV efficiency under the full 118 W/cm2 irradiance. Improvements to the back-surface reflectivity and series resistance are expected to increase the ideal TPV efficiency well above 40%.
25 ENERGY STORAGE↗
AI for Materials Design and Discovery Using Atomistic Scale Information [Industrial and Governmental Activities]
The design and discovery of materials with desired functional properties is pivotal to the scientific mission of the United States Department of Energy (US-DOE) [1], which includes within its portfolio several important applications for the national economy and security. Importantly, these applications range from: renewable energy (e.g., solar cells, organic photovoltaics, and organic light-emitting diodes), energy storage (e.g., batteries and supercapacitors), and carbon capture and sequestration, to synthesis of manufacturing of new materials (e.g., drugs, or materials with desired conductivity, thermal stability, and catalytic activity), and nuclear energy (e.g., highly performant nuclear fuels and materials with improved nuclear shielding properties).
97 MATHEMATICS AND COMPUTING↗
High altitude calibration of solar cells using rockets
The use of sounding rockets for calibrating solar cells offers two principal advantages: there is no effect due to the terrestrial atmosphere and the cells are recoverable immediately after calibration. Four n/p photovoltaic cells were calibrated in space and successfully recovered from a NASA Aerobee rocket that reached a peak altitude of 251 km. Two of the cells were optically filtered with 0.6 to 0.9-micron bandpass filters. The short-circuit current agreed to within 4% of the laboratory calibration; variation of cell output due to atmospheric attenuation in the altitude range of 80 to 251 km was 0.4% for the unfiltered cells.
Thomas, N. L.↗
Polycrystalline silicon study: Low-cost silicon refining technology prospects and semiconductor-grade polycrystalline silicon availability through 1988
Photovoltaic arrays that convert solar energy into electrical energy can become a cost effective bulk energy generation alternative, provided that an adequate supply of low cost materials is available. One of the key requirements for economic photovoltaic cells is reasonably priced silicon. At present, the photovoltaic industry is dependent upon polycrystalline silicon refined by the Siemens process primarily for integrated circuits, power devices, and discrete semiconductor devices. This dependency is expected to continue until the DOE sponsored low cost silicon refining technology developments have matured to the point where they are in commercial use. The photovoltaic industry can then develop its own source of supply. Silicon material availability and market pricing projections through 1988 are updated based on data collected early in 1984. The silicon refining industry plans to meet the increasing demands of the semiconductor device and photovoltaic product industries are overviewed. In addition, the DOE sponsored technology research for producing low cost polycrystalline silicon, probabilistic cost analysis for the two most promising production processes for achieving the DOE cost goals, and the impacts of the DOE photovoltaics program silicon refining research upon the commercial polycrystalline silicon refining industry are addressed.
Costogue, E. N.↗