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At least 181 records · Page 10

Multiscale and multiphysics FEA simulation and materials optimization for laser ultrasound transducers

In this study, the relationship between the nanocomposite design and the laser ultrasound transducer (LUT) characteristics was investigated through simulations in multiple scale levels for material behavior, device response, and acoustic wave propagation in media. First, the effects of the nanoparticle size and concentration on the effective properties of composites were quantitatively investigated with the finite element analysis (FEA) method. Second, the effective properties of the nanocomposite were assigned to the layer, which is modeled as a homogeneous material, in the FEA for the LUT simulating the energy conversion from the incident laser to the acoustic wave. Finally, the ultrasound propagation in the water was calculated by a theoretical wave propagation model. The FEA-based prediction was compared with the experimental data in the literature and a theoretical analysis for LUT based on Thermal-Acoustic coupling. As a result, the ultrasound waves on the transducer surface and at a distance in the water could be predicted. Based on the hierarchically integrated prediction procedure, the optimal conditions of the photoacoustic nanocomposites were investigated through the parametric study with the particle size and concentration as variables. The results guide the material designs optimized for different device characteristics, such as high pressure and broad bandwidth.

36 MATERIALS SCIENCE↗

Operando X-ray Nanocharacterization of Polycrystalline Thin Film Modules

Non-destructive measurement techniques, with high spatial resolution, capable of correlating composition and structure with device properties, are few and far between. For the case of polycrystalline and inhomogeneous materials, the added challenge is that large sampling areas are necessary in order to have a statistical representation of the specimen under study. For the study of grain cores and grain boundaries in polycrystalline solar absorbers this is of particular importance since their dissimilar behavior and variability throughout the samples makes it difficult to draw conclusions and ultimately optimize the materials and devices. Our approach to use state-of-the-art x-ray microscopy to study full module stacks under operating conditions is unique. Understanding the effects of elemental and charge migration under full encapsulation and operating conditions will allow CIGS and CdTe manufactures and in particular our partners in this proposal to modify materials, stacks, architectures, and processing steps to minimize the performance losses through time.

14 SOLAR ENERGY↗

Temperature-induced degradation of GaN HEMT: An in situ heating study

High-power electronics, such as GaN high electron mobility transistors (HEMTs), are expected to perform reliably in high-temperature conditions. This study aims to gain an understanding of the microscopic origin of both material and device vulnerabilities to high temperatures by real-time monitoring of the onset of structural degradation under varying temperature conditions. This is achieved by operating GaN HEMT devices in situ inside a transmission electron microscope (TEM). Electron-transparent specimens are prepared from a bulk device and heated up to 800 °C. High-resolution TEM (HRTEM), scanning TEM (STEM), energy-dispersive x-ray spectroscopy (EDS), and geometric phase analysis (GPA) are performed to evaluate crystal quality, material diffusion, and strain propagation in the sample before and after heating. Gate contact area reduction is visible from 470 °C accompanied by Ni/Au intermixing near the gate/AlGaN interface. Elevated temperatures induce significant out-of-plane lattice expansion at the SiNx/GaN/AlGaN interface, as revealed by geometry-phase GPA strain maps, while in-plane strains remain relatively consistent. Exposure to temperatures exceeding 500 °C leads to almost two orders of magnitude increase in leakage current in bulk devices in this study, which complements the results from our TEM experiment. The findings of this study offer real-time visual insights into identifying the initial location of degradation and highlight the impact of temperature on the bulk device’s structure, electrical properties, and material degradation.

36 MATERIALS SCIENCE↗

RF sheath induced sputtering on Proto-MPEX. I. Sheath equivalent dielectric layer for modeling the RF sheath

The pulsed linear plasma device Prototype Material Plasma Exposure eXperiment (Proto-MPEX) uses a radio frequency (RF) helicon antenna with an aluminum nitride ceramic window for plasma production. The RF sheath created under the helicon antenna is sufficient to cause ion impact energies to be greater than the sputtering threshold of the AlN helicon window material and for impurities to be created. In this study, we investigate the RF sheath on the inner diameter of the helicon window and its impact on the impurity production rates in Proto-MPEX. Three models—a 3D COMSOL finite element RF model of the Proto-MPEX helicon region, a rectified DC sheath potential model, and the 3D Global Impurity TRansport code—are coupled together to study impurity production and transportation. This novel method of impurity generation and transport modeling spans length scales ranging from the sheath (millimeters or less) up to the full device (meters) and can be applied to other radio frequency sources and antennas in a wide range of plasma physics studies, including basic plasmas, low-temperature processing plasmas, plasma thrusters, and fusion plasmas.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Interfacial thermal transport in spin caloritronic material systems

Interfaces often govern the thermal performance of nanoscale devices and nanostructured materials. As a result, accurate knowledge of thermal interface conductance is necessary to model the temperature response of nanoscale devices or nanostructured materials to heating. Here, we report the thermal boundary conductance between metals and insulators that are commonly used in spin-caloritronic experiments. We use time-domain thermoreflectance to measure the interface conductance between metals such as Au, Pt, Ta, Cu, and Al with garnet and oxide substrates, e.g., NiO, yttrium iron garnet (YIG), thulium iron garnet (TmIG), Cr 2 O 3 , and sapphire. We find that, at room temperature, the interface conductance in these types of material systems range from 50 to 300 MW m –2 K –1 . Furthermore, we also measure the interface conductance between Pt and YIG at temperatures between 80 and 350 K. At room temperature, the interface conductance of Pt/YIG is 170 MW m –2 K –1 and the Kapitza length is ~40 nm. A Kapitza length of 40 nm means that, in the presence of a steady-state heat current, the temperature drop at the Pt/YIG interface is equal to the temperature drop across a 40-nm-thick layer of YIG. At 80 K, the interface conductance of Pt/YIG is 60 MW m –2 K –1 , corresponding to a Kapitza length of ~300 nm.

36 MATERIALS SCIENCE↗

Electronic thermal transport measurement in low-dimensional materials with graphene non-local noise thermometry

In low-dimensional systems, the combination of reduced dimensionality, strong interactions and topology has led to a growing number of many-body quantum phenomena. Thermal transport, which is sensitive to all energy-carrying degrees of freedom, provides a discriminating probe of emergent excitations in quantum materials and devices. However, thermal transport measurements in low dimensions are dominated by the phonon contribution of the lattice, requiring an experimental approach to isolate the electronic thermal conductance. In this work we measured non-local voltage fluctuations in a multi-terminal device to reveal the electronic heat transported across a mesoscopic bridge made of low-dimensional materials. Using two-dimensional graphene as a noise thermometer, we measured the quantitative electronic thermal conductance of graphene and carbon nanotubes up to 70 K, achieving a precision of ~1% of the thermal conductance quantum at 5 K. Employing linear and nonlinear thermal transport, we observed signatures of energy transport mediated by long-range interactions in one-dimensional electron systems, in agreement with a theoretical model.

36 MATERIALS SCIENCE↗

Quantitative Specifications to Avoid Degradation during E-Beam and Induced Current Microscopy of Halide Perovskite Devices

Degradation due to electron beam exposure has posed a challenge in the use of electron microscopy to probe halide perovskite materials and devices. Herein, the interaction between the electron beam and the perovskite across acceleration voltages and at low probe currents is investigated in a scanning electron microscope (SEM) by monitoring the electron-beaminduced current (EBIC) response in perovskite solar cells in a planview configuration. SEM probe conditions are identified where dozens of repeated scans over a single region of the perovskite solar cell induce minimal electronic degradation. Overall, the induced current response of the perovskite device is found to strongly depend upon the beam condition: rapid decay occurs at high beam powers, the current activates at the lowest beam powers, and a newfound quasi-steady response is revealed at intermediate beam conditions. A quantitative window for the successful conduction of e-beam studies with minimal electronic degradation is revealed by evaluating induced current response over a wide range of perovskite devices, which invites broader use of SEM-based characterization techniques, including EBIC, as powerful techniques for correlative microscopy investigations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Electro-Thermal Characterization of Dynamical VO 2 Memristors via Local Activity Modeling

We report translating the surging interest in neuromorphic electronic components, such as those based on nonlinearities near Mott transitions, into large-scale commercial deployment faces steep challenges in the current lack of means to identify and design key material parameters. These issues are exemplified by the difficulties in connecting measurable material properties to device behavior via circuit element models. Here, the principle of local activity is used to build a model of VO 2 /SiN Mott threshold switches by sequentially accounting for constraints from a minimal set of quasistatic and dynamic electrical and high-spatial-resolution thermal data obtained via in situ thermoreflectance mapping. By combining independent data sets for devices with varying dimensions, the model is distilled to measurable material properties, and device scaling laws are established. The model can accurately predict electrical and thermal conductivities and capacitances and locally active dynamics (especially persistent spiking self-oscillations). The systematic procedure by which this model is developed has been a missing link in predictively connecting neuromorphic device behavior with their underlying material properties, and should enable rapid screening of material candidates before employing expensive manufacturing processes and testing procedures.

36 MATERIALS SCIENCE↗

Halide Perovskite Solar Photovoltaics

Technological progress in photovoltaic (PV) technologies provides hope that a comprehensive and desperately needed decarbonization of the energy sector is possible. Commercially successful PV technologies based predominantly on silicon wafer technology are reliable and cost-effective, but remain capital- and carbon-intensive. In this context, emerging PV technologies, such as metal-halide perovskites (MHPs), could further catalyze the energy transition by providing technological opportunities for even lower-cost, mass-producible, high-efficiency solar cells with a significantly reduced "carbon footprint." This themed issue of MRS Bulletin on "Halide perovskite solar photovoltaics summarizes the current state of the art, challenges, and opportunities of perovskite photovoltaics with contributions and perspectives from six expert teams worldwide. The topics covered provide a status update on perovskite PV, remaining hurdles to their deployment, and challenges to realizing the potential of this technology to impact climate goals. Articles in this collection address scalability of perovskite PV and prospects for industrial manufacturing; perovskite PV as an add-on technology on top of commercial silicon PV; environmental and sustainability considerations; and durability and reliability considerations. Further considerations include prospects of automation, coupled to artificial intelligence and machine learning, for accelerating material-based solutions to these outstanding challenges including the possibilities of discovering new absorber and device component materials to enable success and ultimately deployment of these next-generation PVs.

metal-halide perovskites↗

First Principle based Thermal Conductivity Modeling of Metal Alloys with Applications on Uranium Alloys

Thermal conductivity is an important materials property related to heat transport, which is essential to many applications, ranging from thermoelectrics to nuclear reactor materials. High- quality thermal conductivity data is critical to these materials and their associated technologies, including the nuclear fuel materials like traditional oxide fuels and metallic uranium (U) fuels, e.g. U-Zr and U-Mo alloys. And thermal conductivity modeling is widely used to interpolate or extrapolate experimental data, to obtain high-quality thermal conductivity data over wide temperature and composition range, and to understand the impacts of different factors including defects and microstructures. However, a general thermal conductivity model for metal alloys which can work regrading different phase components is still missing. Also, for U alloys, a thermal conductivity model working with different phases is needed. Therefore, in this work, we developed thermal conductivity models for metal alloys, based on ab-initio calculations, semi-classical physics rules, and limited experimental data. The goals of these models are to help obtain high- quality thermal conductivity data within a little experimental input as possible, have models that are extendable to varying microstructures, including different types of irradiation effects, and provide mechanistic understanding of heat transfer in the modeled alloys. In this work, our model solves several challenges in the development. The DFT-BTE approach is applied to decrease the reliance on experimental data and make the model extendable to composition changes and defects. A practical and efficient way to combine the DFT inputs with physics rules is pointed out in this work too. A staged approach, which starts from simple cases of elemental metals, then extends to solid solutions, different compound phases, and multi-phase mixtures, is presented to work with the metal alloys in different phase components. Our models are demonstrated respectively on aU for elemental metal model, on U-Zr and U-Mo alloys in aU temperature range for multi-phase mixture model, on high-temperature U-Zr, U-Nb, and U-Mo alloys in the body-centered cubic phase for concentrated solid solution model, and on irradiated U-Mo alloys for irradiated metal alloy model. All models show great agreement with experimental data. In these demonstrations, our model shows its advantages compared to previous empirical fitting model. Our model requires fewer experimental data, due to the inputs from DFT. The quantitative insights into the different physical factors are provided in our model, as it incorporates the electron and phonon scattering mechanisms. Our model also can be extended to incorporate the contributions of point defects, grain boundaries, and noble gas bubbles, to integrate their effects on heat transfer. This model can serve as both a foundation for understanding the more complex thermal conductivity of realistic U alloy fuels and a useful tool to guide further modeling of thermal conductivity to aid materials and device design.

11 - NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Device Performance of Emerging Photovoltaic Materials (Version 3)

Abstract Following the 2nd release of the “Emerging PV reports,” the best achievements in the performance of emerging photovoltaic devices in diverse emerging photovoltaic research subjects are summarized, as reported in peer‐reviewed articles in academic journals since August 2021. Updated graphs, tables, and analyses are provided with several performance parameters, e.g., power conversion efficiency, open‐circuit voltage, short‐circuit current density, fill factor, light utilization efficiency, and stability test energy yield. These parameters are presented as a function of the photovoltaic bandgap energy and the average visible transmittance for each technology and application, and are put into perspective using, e.g., the detailed balance efficiency limit. The 3rd installment of the “Emerging PV reports” extends the scope toward triple junction solar cells.

14 SOLAR ENERGY↗

Chapter 15: Summary and Outlook

In the various chapters of this book, numerous characterization techniques are presented that can be applied to thin-film solar cells to determine (micro)structural, compositional, electrical, and optoelectronic properties. What has yet to be more fully elucidated is to what extent these characterization techniques can be combined, in a correlative way, to enhance the information gathered on materials and devices. Indeed, it is valuable to consider combining techniques to verify the relevance of the measured materials properties or to obtain them on different length scales-to compare surface with bulk properties, or to correlate structure and composition of materials with electrical and optoelectronic properties.

41 EE - Solar Energy Technologies Office (EE-4S)↗

Advancing the Understanding of Manufacturing Tools for Hardware Security

This project’s goal was to explore new methods and tools to evaluate the focused ion beam (FIB) effect on active electrical devices, which is becoming increasingly challenged by the continual decrease in transistor geometry. Novel hole transfer methods leveraging FIB patterning were demonstrated utilizing selective area atomic layer deposition (ALD) and metal assisted chemical etching. A FIB damage electrical tester device was fabricated, and the effects of FIB beams were characterized by examining change in performance of damaged transistors. Detailed characterization of end-of-range damage for common FIB ions were correlated to modeling methods. Finally, undamaged and damaged devices were simulated by Charon to begin understanding the FIB effects on active devices. This test platform along with modeling methods give a powerful way to assess FIB damage in materials and devices, and with more development can help establish methods to predict FIB damage effects on electrical devices.

42 ENGINEERING↗

Device Performance of Emerging Photovoltaic Materials (Version 1)

Abstract Emerging photovoltaics (PVs) focus on a variety of applications complementing large scale electricity generation. Organic, dye‐sensitized, and some perovskite solar cells are considered in building integration, greenhouses, wearable, and indoor applications, thereby motivating research on flexible, transparent, semitransparent, and multi‐junction PVs. Nevertheless, it can be very time consuming to find or develop an up‐to‐date overview of the state‐of‐the‐art performance for these systems and applications. Two important resources for recording research cells efficiencies are the National Renewable Energy Laboratory chart and the efficiency tables compiled biannually by Martin Green and colleagues. Both publications provide an effective coverage over the established technologies, bridging research and industry. An alternative approach is proposed here summarizing the best reports in the diverse research subjects for emerging PVs. Best performance parameters are provided as a function of the photovoltaic bandgap energy for each technology and application, and are put into perspective using, e.g., the Shockley–Queisser limit. In all cases, the reported data correspond to published and/or properly described certified results, with enough details provided for prospective data reproduction. Additionally, the stability test energy yield is included as an analysis parameter among state‐of‐the‐art emerging PVs.

36 MATERIALS SCIENCE↗

Flexible Magnetic Polymer Composite Substrate with Ba 1.5 Sr 1.5 Z Hexaferrite Particles of VHF/Low UHF Patch Antennas for UAVs and Medical Implant Devices

Our goal is to fabricate flexible magnetic polymer composites as antenna substrates for very high frequency (VHF)/low ultra high frequency (UHF) antennas for unmanned aerial vehicles (UAVs) and medical devices. Magnetodielectric materials, which have permeability (μ) similar to permittivity (ε), have attracted great attention, because they facilitate miniaturization of microwave devices while keeping or enhancing electromagnetic characteristics. Mechanically millled Ba 1.5 Sr 1.5 Co 2 Fe 24 O 41 (Ba 1.5 Sr 1.5 Z) hexaferrite particles were used to increase permeability in the interesting frequency band. The microwave properties of Ba 1.5 Sr 1.5 Z composites were predicted and measured. Hansen’s zero-order analysis of antenna bandwidth and electromagnetic field simulation showed that the hexaferrite-based flexible composite could enhance a bandwidth and achieve the miniaturization of antennas as well. The magnetic antenna substrates can be a good solution to integrate antennas into the UAVs whose dimensions are comparable to or larger than communication wavelength.

36 MATERIALS SCIENCE↗

Ultrafast (1‐5 sec) Lamination of Perovskite Solar Cells With Self‐Encapsulation Using Rapid Joule Heating

Perovskite solar cells (PSCs) are traditionally fabricated using sequential layer‐by‐layer deposition, in which each layer of the device is processed on top of the preceding layer. This constrains the processing techniques and selection of transport layer materials that can be used in the solar cell. To overcome these challenges, two half‐cells can be processed independently and then diffusion‐bonded through a lamination process. However, current lamination processes for perovskite solar cells suffer from relatively long process times, which can limit throughput when moving toward high‐volume manufacturing. In this study, a custom platform was designed for rapid‐joule heating of perovskite materials and devices. This enabled more than a 99% reduction in lamination time from 26 min to 1 s. Perovskite samples that were laminated in 1 s exhibited comparable values of percent bonded area, interfacial toughness, grain domain size, and X‐ray diffraction spectra to those laminated in greater than 10 min. As a proof‐of‐concept, 18.3% efficient devices were successfully laminated in 5 s. A transient heat transfer model was developed to describe the relationship between the perovskite temperature and the electrical power supplied to the heaters, establishing a baseline for predicting processing conditions in large‐scale manufacturing systems. Ultra‐fast lamination provides a pathway toward scalable roll‐to‐roll or sheet‐to‐sheet manufacturing of PSCs.

heat transfer↗

A Scalable Method for Thickness and Lateral Engineering of 2D Materials

The physical properties of two-dimensional (2D) materials depend strongly on the number of layers. Hence, methods for controlling their thickness with atomic layer precision are highly desirable, yet still too rare, and demonstrated for only a limited number of 2D materials. Here we present a simple and scalable method for the continuous layer-by-layer thinning that works for a large class of 2D materials, notably layered germanium pnictides and chalcogenides. It is based on a simple oxidation/etching process, which selectively occurs on the topmost layers. Through a combination of atomic force microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy and X-ray diffraction experiments we demonstrate the thinning method on germanium arsenide (GeAs), germanium sulfide (GeS) and germanium disulfide (GeS 2 ). We use first-principles simulation to provide insights into the oxidation mechanism. Our strategy, which could be applied to other classes of 2D materials upon proper choice of the oxidation/etching reagent, could pave the way for the realization of 2D material-based devices, such as electronic or optoelectronic ones, where a precise control over the number of layers (hence over the material’s physical properties) is needed. We also show that when used in combination with lithography, our method can be used to make precise patterns in the 2D materials.

2D materials↗