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At least 181 records · Page 10

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NASA NTRS1986

Reliability of scanning laser acoustic microscopy for detecting internal voids in structural ceramics

The reliability of 100 MHz scanning laser acoustic microscopy (SLAM) for detecting internal voids in sintered specimens of silicon nitride and silicon carbide was evaluated. The specimens contained artificially implanted voids and were positioned at depths ranging up to 2 mm below the specimen surface. Detection probability of 0.90 at a 0.95 confidence level was determined as a function of material, void diameter, and void depth. The statistical results presented for void detectability indicate some of the strengths and limitations of SLAM as a nondestructive evaluation technique for structural ceramics.

Roth, D. J.↗

NASA NTRS1986

Quantitative flaw characterization with scanning laser acoustic microscopy

Surface roughness and diffraction are two factors that have been observed to affect the accuracy of flaw characterization with scanning laser acoustic microscopy. In accuracies can arise when the surface of the test sample is acoustically rough. It is shown that, in this case, Snell's law is no longer valid for determining the direction of sound propagation within the sample. The relationship between the direction of sound propagation within the sample, the apparent flaw depth, and the sample's surface roughness is investigated. Diffraction effects can mask the acoustic images of minute flaws and make it difficult to establish their size, depth, and other characteristics. It is shown that for Fraunhofer diffraction conditions the acoustic image of a subsurface defect corresponds to a two-dimensional Fourier transform. Transforms based on simulated flaws are used to infer the size and shape of the actual flaw.

Generazio, E. R.↗

NASA NTRS1986

Quantitative void characterization in structural ceramics using scanning laser acoustic microscopy

The ability of scanning laser acoustic microscopy (SLAM) to characterize artificially seeded voids in sintered silicon nitride structural ceramic specimens was investigated. Using trigonometric relationships and Airy's diffraction theory, predictions of internal void depth and size were obtained from acoustic diffraction patterns produced by the voids. Agreement was observed between actual and predicted void depths. However, predicted void diameters were generally much greater than actual diameters. Precise diameter predictions are difficult to obtain due to measurement uncertainty and the limitations of 100 MHz SLAM applied to typical ceramic specimens.

Roth, D. J.↗

NASA NTRS1986

Reliability of void detection in structural ceramics by use of scanning laser acoustic microscopy

The reliability of scanning laser acoustic microscopy (SLAM) for detecting surface voids in structural ceramic test specimens was statistically evaluated. Specimens of sintered silicon nitride and sintered silicon carbide, seeded with surface voids, were examined by SLAM at an ultrasonic frequency of 100 MHz in the as fired condition and after surface polishing. It was observed that polishing substantially increased void detectability. Voids as small as 100 micrometers in diameter were detected in polished specimens with 0.90 probability at a 0.95 confidence level. In addition, inspection times were reduced up to a factor of 10 after polishing. The applicability of the SLAM technique for detection of naturally occurring flaws of similar dimensions to the seeded voids is discussed. A FORTRAN program listing is given for calculating and plotting flaw detection statistics.

Roth, D. J.↗

NASA NTRS1986

Quantitative flaw characterization with scanning laser acoustic microscopy

Surface roughness and diffraction are two factors that have been observed to affect the accuracy of flaw characterization with scanning laser acoustic microscopy. Inaccuracies can arise when the surface of the test sample is acoustically rough. It is shown that, in this case, Snell's law is no longer valid for determining the direction of sound propagation within the sample. The relationship between the direction of sound propagation within the sample, the apparent flaw depth, and the sample's surface roughness is investigated. Diffraction effects can mask the acoustic images of minute flaws and make it difficult to establish their size, depth, and other characteristics. It is shown that for Fraunhofer diffraction conditions the acoustic image of a subsurface defect corresponds to a two-dimensional Fourier transform. Transforms based on simulated flaws are used to infer the size and shape of the actual flaw.

Generazio, E. R.↗

NASA NTRS1986

Reliability of scanning laser acoustic microscopy for detecting internal voids in structural ceramics

Roth, D. J.↗

NASA NTRS1986

Toughening mechanisms in elastomer-modified epoxies. I - Mechanical studies. II - Microscopy studies

Tensile dilatometry at constant displacement rates is presently used to ascertain whether voiding, crazing or shear banding are the deformation mechanisms at work in the toughening of brittle epoxies through the addition of an elastomeric phase. The results obtained for epoxies toughened by various levels of several types of carbonyl-terminated butadiene nitrile liquid rubber indicate that, at low strain rates, the rubber particles simply enhance shear deformation; at sufficiently high strain rates, the particles cavitate and promote further shear deformation. Examinations of these materials are conducted by means of SEM, TEM, and optical microscopy in the second part of this study. Toughening is hypothesized to involve cavitation's relieving of triaxial tension at the crack tip, as well as shear band formation, which creates a plastic zone.

Yee, A. F.↗

NASA NTRS1987

The use of multiple EBIC curves and low voltage electron microscopy in the measurement of small diffusion lengths

Accurate evaluations of diffusion lengths for heavily to moderately doped III-V semiconductors and/or radiation damaged solar cells have been made possible by using experimental and numerical techniques. The techniques employed were electron beam induced current and low voltage electron microscopy.

Leon, R. P.↗

NASA NTRS1987

Diffusion length measurements in bulk and epitaxially grown 3-5 semiconductors using charge collection microscopy

Diffusion lengths and surface recombination velocities were measured in GaAs diodes and InP finished solar cells. The basic techniques used was charge collection microscopy also known as electron beam induced current (EBIC). The normalized currents and distances from the pn junction were read directly from the calibrated curves obtained while using the line scan mode in an SEM. These values were then equated to integral and infinite series expressions resulting from the solution of the diffusion equation with both extended generation and point generation functions. This expands previous work by examining both thin and thick samples. The surface recombination velocity was either treated as an unknown in a system of two equations, or measured directly using low e(-) beam accelerating voltages. These techniques give accurate results by accounting for the effects of surface recombination and the finite size of the generation volume.

Leon, R. P.↗

NASA NTRS1987

'Oxide-free' tip for scanning tunneling microscopy

A new tip for scanning tunneling microscopy and a tip repair procedure that allows one to reproducibly obtain atomic images of highly oriented pyrolytic graphite with previously inoperable tips are reported. The tips are shown to be relatively oxide-free and highly resistant to oxidation. The tips are fabricated with graphite by two distinct methods.

Colton, R. J.↗

NASA NTRS1987

Quantitative void characterization in structural ceramics by use of scanning laser acoustic microscopy

Roth, D. J.↗

NASA NTRS1988

Application of Hoffman modulation contrast microscopy coupled with three-wavelength two-beam interferometry to the in situ direct observation of the growth process of a crystal in microgravity

Direct visualization of three dimensional transfer process of both heat and mass around a growing crystal and mono-molecular growth layers on the surface is possible in situ by means of high resolution Hoffman modulation contrast microscopy coupled with three wavelength two beam Mach-Zehnder interferometry. This in situ observation is very suitable for the verification of the growth mechanism of a crystal in a solution or a melt in microgravity.

Tsukamoto, Katsuo↗

NASA NTRS1988

Flaw characterization in structural ceramics using scanning laser acoustic microscopy

The ability of scanning laser acoustic microscopy (SLAM) to characterize artifically seeded voids in sintered silicon nitride structural ceramic specimens was investigated. The voids ranged from 20 to 430 microns in diameter and were embedded up to 2 mm beneath the surface of the specimens. Probability of detection was determined as a function of void depth and size. Trigonometric relationships and Airy's diffraction theory were used to obtain predictions of void depth and size from acoustic diffraction patterns produced by the voids. Agreement was observed between actual and predicted void depths. However, predicted void diameters were generally much greater than actual diameters. Precise diameter predictions are difficult to obtain because of measurement uncertainty and the limitations of the 100 MHz SLAM applied to typical ceramic specimens.

Roth, Don J.↗

NASA NTRS1986

Nondestructive Evaluation (NDE) of structural ceramics by photoacoustic microscopy

Photoacoustic microscopy (PAM) was utilized to detect surface and subsurface defects in structural ceramic materials. A computerized PAM data acquisition, color imaging and analysis system was developed and used. Subsurface simulated cylindrical holes can be detected to about 1 mm below the interrograting surface. Simulated tight surface cracks of 96 microns length and 48 microns depth can be detected in these materials under optimum conditions.

Khandelwal, P. K.↗

NASA NTRS1988

Direct control and characterization of a Schottky barrier by scanning tunneling microscopy

Scanning tunneling microscopy (STM) methods are used to directly control the barrier height of a metal tunnel tip-semiconductor tunnel junction. Barrier behavior is measured by tunnel current-voltage spectroscopy and compared to theory. A unique surface preparation method is used to prepare a low surface state density Si surface. Control of band bending with this method enables STM investigation of semiconductor subsurface properties.

Bell, L. D.↗

NASA NTRS1988

Transmission electron microscopy study of the formation of epitaxial CoSi2/Si (111) by a room-temperature codeposition technique

Co and Si have been codeposited on Si (111) substrates near room temperature in a stoichiometric 1:2 ratio in a molecular beam epitaxy system. Annealing of these deposits yields high-quality single-crystal CoSi2 layers. Transmission electron microscopy has been used to examine as-deposited layers and layers annealed at 300, 500, and 600 C. Single-crystal epitaxial grains of CoSi2 embedded in a matrix of amorphous Co/Si are observed in as-deposited samples, while the layer is predominantly single-crystal, inhomogeneously strained CoSi2 at 300 C. At 600 C, a homogeneously strained single-crystal layer with a high density of pinholes is observed. In contrast to other solid phase epitaxy techniques used to grow CoSi2 on Si (111), no intermediate silicide phases are observed prior to the formation of CoSi2.

D'Anterroches, Cecile↗

NASA NTRS1987

Multielement mapping of alpha-SiC by scanning Auger microscopy

Fine second-phase particles, numerous in sintered alpha-SiC, were analyzed by scanning Auger microscopy and conventional techniques. The Auger analysis utilized computer-controlled data acquisition, multielement correlation diagrams, and a high spatial resolution of 100 nm. This procedure enabled construction of false color maps and the detection of fine compositional details within these particles. Carbon, silicon oxide, and boron-rich particles (qualitatively as BN or B4C) predominated. The BN particles, sometimes having a carbon core, are believed to result from reaction between B4C additives and nitrogen sintering atmospheres.

Browning, Ray↗

NASA NTRS1987

Diffusion length measurement in bulk and epitaxially grown III-V semiconductors using charge collection microscopy

Diffusion lengths and surface recombination velocities were measured in GaAs diodes and InP finished solar cells. The basic technique used was charge collection microscopy, also known as electron beam induced current (EBIC). The normalized currents and distances from the pn junction were read directly from the calibrated curves obtained while using the line-scan mode in an SEM. These values were then equated to integral and infinite series expressions resulting from the solution of the diffusion equation with both extended-generation and point-generation functions. This expands previous work by examining both thin and thick samples. The surface recombination velocity was either treated as an unknown in a system of two equations or measured directly using low e(-) beam accelerating voltages. These techniques give accurate results by accounting for the effects of surface recombination and the finite size of the generation volume.

Leon, R. P.↗