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Hydration water dynamics, structure, and thermodynamics are crucially important to understand and predict water-mediated properties at molecular interfaces.
SalineMoose is a MOOSE wrapper for the open-source Saline code, which is an interface for fluid property databsae files. This code is meant to provide access to Saline, which can easily be integrated into MOOSE-based codes that need access to the fluid thermophysical properties that Saline can provide. Wrapping Saline in SalineMoose allows MOOSE codes to use the native MOOSE build system for linking Saline to their MOOSE application.
Although casting Aluminum (Al) alloys is widely used for automotive application, the conventional casting process is showing limitations for modern vehicle production. A hybrid manufacturing method that is capable of fabricating automotive structures with tailored functionality and tuned attributes at a high production rate is proposed in this project, utilizing the merits of conventional casting methods and additive manufacturing (AM) methods. Ford is interested in supplementing conventional casting processes (e.g., shape casting, high pressure die casting) with local modifications to geometry and microstructure using additive manufacturing techniques. Two additive manufacturing methods, wire-arc and laser hot-wire directed energy deposition AM process, were evaluated by deposition of 4043 filler wire onto high-pressure die cast and permanent mold cast Al-Si alloys. The feasibility of this hybrid manufacturing method was determined through trial deposition and evaluation of defects, microstructure, and mechanical properties. Laser hot-wire deposition was found to be beneficial for this application with low porosity, a refined microstructure, and mechanical properties similar to those reported in the literature for 4043. The mechanical properties of the interface between the A356 casting and deposited 4043 were found to be controlled by the weaker deposit material.
Casting of aluminum alloys is a cost-effective way to mass manufacture bulk aluminum parts for automotive applications. However, the casting process requires filling of a mold, which imposes some limitations on the geometries that can be successfully cast and limits parts to be a uniform material. Therefore, we proposed that a hybrid casting plus additive manufacturing approach, Cast-and-Print, which could be used to locally modify the properties and geometry of cast parts to create difficult-to-cast, functional features. Here, we report the results of the properties of deposited materials on cast substrate, the properties of the interface of the deposited and cast material, and the application of the Cast-and-Print method to deposit rivet tabs on high-pressure die cast plates. Ultimately, the approach appears viable, but there are engineering challenges present to reliable additive processing of aluminum wires that need to be overcome for successful implementation of the technology.
GaN vertical power transistors have emerged as promising candidates for future high efficiency high power electronic applications, with the potential to outperform conventional GaN lateral power devices in terms of power, breakdown, and avalanche characteristics. However, the development of current GaN vertical power transistors is seriously hindered by the poor materials performance of selective area doped p-n junctions. A mechanistic understanding of these fundamental materials issues is essential in order to achieve high performance selective area doped p-n junctions and consequently to advance the GaN vertical power transistor technology. To address this challenge, we carried out a comprehensive research program that advance fundamental knowledge in the selective area doping for GaN materials, and which will lead to the development of high performance GaN vertical power transistors. First, we developed innovative fabrication processes, including novel surface etching, surface passivation, and metalorganic chemical vapor deposition (MOCVD) growth, which provided enhanced opportunities for solving the unique challenges of selective area doping in GaN materials. Second, we performed a fundamental materials study using powerful characterization methods including transmission electron microscopy (TEM), ultraviolet (UV-), x-ray and angle-resolved photoelectron spectroscopy (UPS/XPS/ARPES), electron holography, and cathodoluminescence (CL); Third, we investigated several related issues, including Mg incorporation, polarization effects in carrier transport, and non-ideal material effects, which have rarely been explored so far. At the end of this project, we successfully demonstrated (1) fundamental understanding of selective area etching, regrowth, and doping of GaN, and associated knowledge on defects, interface, and breakdown properties. (2) Effective etch and regrowth processing recipes to achieve etch/regrowth GaN p-n diodes with very low leakage of 3.5 nA at 600 V, which meets the ARPA-E target. (2) High performance vertical GaN p-n didoes and vertical junction termination extension (JTE) devices with breakdown voltage of ~ 2 kV, and breakdown electric field of ~ 3.5 MV/cm, which are close to the performance limit of GaN. The successful outcome has resulted in new fundamental understandings in the selective area doping and regrowth process for GaN, which will lead to groundbreaking GaN vertical transistors for high performance next generation power electronics.
The DOE neams program supports a full range of computational thermal fluids analysis capabilities and code developments for a broad range of advanced reactor concepts. The research and development approach under the thermal fluids technical area synergistically combines three length and time scales in a hierarchical multi-scale approach. To enable multi-scale thermal fluids capability using these codes, a key joint effort has been underway to develop an integrated system- and engineering-scale thermal fluids analysis capability, through integration of SAM and Pronghorn codes, both based on the MOOSE framework. This report summarizes recent advances in developing an integrated system- and engineering-scale modeling capability for the msr concept, which has gained significant interest in recent years. A consistent framework was established by coupling Pronghorn and SAM through the Saline interface, with thermophysical properties provided by the Molten Salt Thermal Property Database (MSTDB-TP). Further improvements were made to the coupling schemes and domain-overlapping strategies, enhancing the stability and robustness of multi-code simulations. Verification and validation efforts demonstrate the accuracy of this integration across a range of benchmark problems, including one-dimensional heated pipe flows, three-dimensional natural convection loops with evolving isotopic compositions, and \gls{msre} demonstration cases. Within Pronghorn, new capabilities were introduced to model corrosion and noble-metal plating phenomena, supported by an extended thermal-hydraulics framework and refined turbulence treatments. To capture two-phase flow behavior, a multiphase Euler–Euler model was implemented in Pronghorn, including advanced closure relations, high-resolution advection techniques, and capillary force reconstruction. Preliminary verification cases confirm the fidelity of the approach, while planned validation efforts target canonical multiphase benchmarks and application to msr components such as the msre pump bowl. Finally, updates to SAM’s msr mass transfer modeling were extended to consider noble gas migration into porous structures like graphite. The point kinetics model was updated to include reactivity feedback contributions from any defined species, such as xenon. The gas transport model was expanded for applicability to gas mixtures, bubble efflux phenomena, and species transport between liquid and gas phases. A selection of multi-scale Sherwood number correlations from MOSCATO/NekRS and multi-phase correlations from literature have been added for improved accuracy in calculating mass transfer coefficients. A companion effort on developing system-level redox corrosion has also been incorporated into SAM. Collectively, these enhancements strengthen the predictive capability of SAM and Pronghorn for simulating MSR thermal-hydraulics, corrosion, multiphase behavior, and fission-product transport, providing a more complete toolset for design, safety analysis, and licensing support of next-generation \gls{msr}s.
As a platform for optoelectronic devices based on exciton dynamics, monolayer transition metal dichalcogenides (TMDCs) are often placed near metal interfaces or inside planar cavities. While the radiative properties of point dipoles at metal interfaces has been studied extensively, those of excitons, which are delocalized and exhibit a temperature-dependent momentum distribution, lack a thorough treatment. Here, we analyze the emission properties of excitons in TMDCs near planar metal interfaces and explore their dependence on exciton center-of-mass momentum, transition dipole orientation, and temperature. Defining a characteristic energy scale k B T c = ($\hbar k$) 2 /2m (k being the radiative wavevector and m the exciton mass), we find that at temperatures T $\gg$ T c and low densities where the momentum distribution can be characterized by Maxwell-Boltzmann statistics, the modified emission rates (normalized to free space) behave similarly to point dipoles. This similarity in behavior arises due to the broad nature of wavevector components making up the exciton and point dipole emission. On the other hand, the narrow momentum distribution of excitons for T < T c can result in significantly different emission behavior as compared to point dipoles. These differences can be further amplified by considering excitons with a Bose Einstein distribution at high phase space densities, such as in a condensate phase. We find suppression or enhancement of emission relative to the point dipole case by several orders of magnitude. These insights can help optimize the performance of optoelectronic devices that incorporate 2D semiconductors near metal electrodes and can inform future studies of exciton radiative dynamics at low temperatures. Additionally, these studies show that nanoscale optical cavities are a viable pathway to generating long-lifetime exciton states in TMDCs.
The quantized Frank–Bilby equation can be used to identify interfacial line defect array configurations which relax the misorientation and/or misfit of a coherent crystalline interface. These line defect arrays may be comprised of dislocations and/or disconnections, which are interfacial steps with dislocation character. When an interface contains disconnections, solution of the quantized Frank–Bilby equation is complicated by the fact that the habit plane orientation is not known in advance because it depends on the unknown spacing of the disconnection array. We present a root-finding-based method for addressing this issue, enabling a self-consistent solution for arbitrary defect content. Our method has been implemented in an open-source code which enumerates all possible solutions given a list of candidate line defects. Two cases are presented employing the code: a misoriented FCC twin boundary and an FCC/BCC phase boundary with the Nishiyama-Wasserman orientation relationship. Both cases exhibit more than 10,000 solutions to the Frank–Bilby equation, with several hundred solutions categorized as ‘‘low energy’’ and thus plausible configurations for the actual interface. The resulting set of solutions can be utilized to predict and understand the properties of a given interface.
Accumulative roll-bonded Cu/Nb nanolaminates (ARB Cu/Nb) possess high strength, thermal stability, and radiation tolerance arising from a high content of heterophase interfaces at fine layer thicknesses. These properties can be tailored by processing parameters used in the ARB Cu/Nb fabrication process, in which layer thickness, thermal history, and strain pathway determine the interface types and resultant properties found in the material. In this work, we subject ARB Cu/Nb to annealing, and then two different rolling pathways – one where rolling direction is held constant (longitudinal rolling, or LR), and one where rolling direction is rotated by 90º and held constant thereafter (cross rolling, or CR). Rolling is performed on ARB Cu/Nb over a targeted range of layer thicknesses from 193 to 25 nm and resultant bulk textures measured by neutron diffraction are correlated with mechanical properties measured by miniaturized tensile tests. The annealing procedure sharpens texture in both phases. We find that Cu mostly develops the same texture in LR and CR. In contrast, Nb develops a distinct texture along the CR pathway that is distinct from the LR texture. The composite texture of Cu/Nb is thus distinct between LR and CR pathways. This difference in texture development between Cu and Nb as a function of strain after change in rolling direction demonstrates the viability for deliberate pairing of Cu LR and Nb CR textures at a desired layer thickness. For mechanical properties, we find that differences in texture do not result in yield or flow stress differences above a layer thickness of 25 nm. Below a layer thickness of 25 nm, despite similar Taylor factors, yield and flow stress and are significantly different. In conclusion, this indicates texture only influences mechanical behavior at low layer thickness, where interface structure dominates mechanical properties.
This document specifies an interface to support the parallel features of Fortran, named the Parallel Runtime Interface for Fortran (PRIF). PRIF is a proposed solution in which the runtime library is responsible for coarray allocation, deallocation and accesses, image synchronization, atomic operations, events, and teams. In this interface, the compiler is responsible for transforming the invocation of Fortran-level parallel features into procedure calls to the necessary PRIF procedures. The interface is designed for portability across shared- and distributed-memory machines, different operating systems, and multiple architectures. Implementations of this interface are intended as an augmentation for the compiler's own runtime library. With an implementation-agnostic interface, alternative parallel runtime libraries may be developed that support the same interface. One benefit of this approach is the ability to vary the communication substrate. A central aim of this document is to define a parallel runtime interface in standard Fortran syntax, which enables us to leverage Fortran to succinctly express various properties of the procedure interfaces, including argument attributes.
This document specifies an interface to support the parallel features of Fortran, named the Parallel Runtime Interface for Fortran (PRIF). PRIF is a proposed solution in which the runtime library is primarily responsible for implementing coarray allocation, deallocation and accesses, image synchronization, atomic operations, events, teams and collective subroutines. In this interface, the compiler is responsible for transforming the invocation of Fortran-level parallel features into procedure calls to the necessary PRIF subroutines. The interface is designed for portability across shared- and distributed-memory machines, different operating systems, and multiple architectures. Implementations of this interface are intended as an augmentation for the compiler's own runtime library. With an implementation-agnostic interface, alternative parallel runtime libraries may be developed that support the same interface. One benefit of this approach is the ability to vary the communication substrate. A central aim of this document is to define a parallel runtime interface in standard Fortran syntax, which enables us to leverage Fortran to succinctly express various properties of the procedure interfaces, including argument attributes.
This design document proposes an interface to support the parallel features of Fortran, named the Parallel Runtime Interface for Fortran (PRIF). PRIF is a proposed solution in which the runtime library is responsible for coarray allocation, deallocation and accesses, image synchronization, atomic operations, events, and teams. In this interface, the compiler is responsible for transforming the invocation of Fortran-level parallel features into procedure calls to the necessary PRIF procedures. The interface is designed for portability across shared- and distributed-memory machines, different operating systems, and multiple architectures. Implementations of this interface are intended as an augmentation for the compiler's own runtime library. With an implementation-agnostic interface, alternative parallel runtime libraries may be developed that support the same interface. One benefit of this approach is the ability to vary the communication substrate. A central aim of this document is to define a parallel runtime interface in standard Fortran syntax, which enables us to leverage Fortran to succinctly express various properties of the procedure interfaces, including argument attributes.
This document specifies an interface to support the multi-image parallelism features of Fortran, named the Parallel Runtime Interface for Fortran (PRIF). PRIF is a solution in which a runtime library is primarily responsible for implementing coarray allocation, deallocation and accesses, image synchronization, atomic operations, events, teams and collective subroutines. The Fortran compiler is responsible for transforming the invocation of Fortran-level multi-image parallelism features into procedure calls to the necessary PRIF subroutines. The interface is designed for portability across shared- and distributed-memory machines, different operating systems, and multiple architectures. Implementations of this interface are intended as an augmentation for the compiler's own runtime library. With an implementation-agnostic interface, alternative parallel runtime libraries may be developed that support the same interface. One benefit of this approach is the ability to vary the communication substrate. A central aim of this document is to define a parallel runtime interface in standard Fortran syntax, which enables us to leverage Fortran to succinctly express various properties of the procedure interfaces, including argument attributes.
This document specifies an interface to support the parallel features of Fortran, named the Parallel Runtime Interface for Fortran (PRIF). PRIF is a proposed solution in which the runtime library is responsible for coarray allocation, deallocation and accesses, image synchronization, atomic operations, events, and teams. In this interface, the compiler is responsible for transforming the invocation of Fortran-level parallel features into procedure calls to the necessary PRIF procedures. The interface is designed for portability across shared- and distributed-memory machines, different operating systems, and multiple architectures. Implementations of this interface are intended as an augmentation for the compiler's own runtime library. With an implementation-agnostic interface, alternative parallel runtime libraries may be developed that support the same interface. One benefit of this approach is the ability to vary the communication substrate. A central aim of this document is to define a parallel runtime interface in standard Fortran syntax, which enables us to leverage Fortran to succinctly express various properties of the procedure interfaces, including argument attributes.
Here, we determine spatially varying discontinuous material properties using a domain-decomposition based physics-informed neural networks (PINNs) framework named the Adaptive Interface-PINNs or AdaI-PINNs (Roy et al., 2024). We propose the use of distinct neural networks for the field variables and material properties within each material, utilizing adaptive activation functions. While the neural networks across different materials share the same weights and biases, their activation functions are uniquely tailored using a hyperparameter that influences the slope of the activation function. The proposed framework is tested on several one-dimensional and two-dimensional benchmark examples, and its performance is compared with conventional PINNs and existing domain-decomposition PINNs frameworks, namely, the Multi-domain physics-informed neural network (M-PINN), and the eXtended physics-informed neural networks (XPINNs). The results demonstrate that the proposed approach can determine randomly distributed discontinuous material properties with an L 2 error of $\mathscr{O}$ (10 -3 ) for the material property and the root-mean-square error of $\mathscr{O}$ (10 -3 ) for the primary variable while the other approaches yield errors that are approximately two orders of magnitude larger (that is, $\mathscr{O}$ (10 -1 )). Moreover, the spatial distribution of material properties obtained using the proposed framework is in close agreement with the true distribution, whereas the other approaches fare much worse. Additionally, the proposed approach is approximately 40% faster than its competitors, indicating its potential as a robust alternative for solving inverse problems in heterogeneous materials.
1T-TaS2 is a layered charge density wave (CDW) crystal exhibiting sharp phase transitions and associated resistance changes. These resistance steps could be exploited for information storage, underscoring the importance of controlling and tuning the CDW states. Given the importance of out-of-plane interactions in 1T-TaS2, modulating interlayer interactions by heterostructuring is a promising method for tailoring CDW phase transitions. In this work, we investigate the optical and electronic properties of heterostructures comprising 1T-TaS2 and monolayer 1H-WSe2. By systematically varying the thickness of 1T-TaS2 and its azimuthal alignment with 1H-WSe2, we find that intrinsic moiré strain and interfacial charge transfer introduce CDW disorder in 1T-TaS2 and modify the CDW ordering temperature. Furthermore, our studies reveal that the interlayer alignment impacts the exciton dynamics in 1H-WSe2, indicating that heterostructuring can concurrently tailor the electronic phases in 1T-TaS2 and the optical properties of 1H-WSe2. This work presents a promising approach for engineering the optoelectronic behavior of heterostructures that integrate CDW materials and semiconductors.
The development of new electrolyte and electrode designs and compositions has led to advances in electrochemical energy-storage (EES) devices over the past decade. However, focusing on either the electrode or electrolyte separately is insufficient for developing safer and more efficient EES devices in various working environments, as the energy-storage ability is determined by the ion arrangement and charge and/or electron transfer at the electrode–electrolyte interface. Here, we assess the fundamental physicochemical and electrochemical properties at the electrode–electrolyte interfaces in Li-ion batteries and supercapacitors using safe and electrochemically stable ionic-liquid electrolytes. Key reactions and interactions at the electrode–electrolyte interface, as well as geometric constraints and temperature effects, are highlighted. Building on the fundamental understanding of interfacial processes, we suggest potential strategies for designing stable and efficient ionic-liquid-based EES devices with emerging electrode materials.