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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface

It is shown that the formation of Au nanoparticles at the insulator–silicon interface in structures with a high density of surface states results in a shift of the Fermi-level pinning energy at this interface towards the valence-band ceiling in silicon and in increasing the surface-state density at energies close to the Fermi level. In this case, a band with a peak at 0.85 eV arises on the photosensivity curves of the capacitor photovoltage, which is explained by the photoemission of electrons from the formed Au-nanoparticle electron states near the valence-band ceiling in silicon.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Pressure-Induced Insulator–Metal Transition in Two-Dimensional Mott Insulator NiPS 3

The pressure-induced insulator to metal transition (IMT) of layered magnetic nickel phosphorous tri-sulfide NiPS 3 was studied in-situ under quasi-uniaxial conditions by means of electrical resistance (R) and X-ray diffraction (XRD) measurements. This sluggish transition is shown to occur at 35 GPa. Transport measurements show no evidence of superconductivity to the lowest measured temperature (~2 K). The structure results presented here differ from earlier in-situ work that subjected the sample to a different pressure state, suggesting that in NiPS 3 the phase stability fields are highly dependent on strain. Furthermore, it is suggested that careful control of the strain is essential when studying the electronic and magnetic properties of layered van der Waals solids.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Triple-glazed insulating unit with improved edge insulation

An insulating unit includes a first spacer frame between first and second sheets, e.g. glass sheets, and a second spacer frame between the second sheet and a third sheet. A first surface of the first spacer frame is adhered to inner surface of the first sheet, and an opposite second surface of the first spacer frame is adhered to a first surface of the second sheet, by a moisture impervious adhesive layer. A first outer surface of the second spacer frame is adhered to a second surface of the second sheet, and an opposite second outer surface of the second spacer frame is adhered to an inner surface of the third sheet, by the adhesive layer. The first spacer frame and the second spacer frame have an offset of greater than zero.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2024

Vacuum insulated glazing, valve, flexible seal, and method for making vacuum insulated glazing

A vacuum insulated glazing includes first and second spaced apart glass panes having perimeter portions defining a vacuum space between the glass panes. A vacuum valve is positioned at the perimeter portions of the glass panes and includes a valve body extending between the perimeter portions of the glass panes, and having first and second ends and a fluid conduit extending from the first end to the second end of the valve body and in fluid communication with the vacuum space. A one-way valve in the fluid conduit permits fluid flow from the vacuum space, and prevents fluid flow into the vacuum space. A suction fitting is provided for connecting the valve body to a suction device. An end seal between the perimeter portions of the glass panes is provided for hermetically sealing the vacuum space. A valve for a VIG and a method of making a VIG are also disclosed.

Bhandari, Mahabir↗
DOE OSTI2026

ResStock Measure Documentation: Light Air Sealing, Attic Floor Insulation, and Duct Sealing and Insulation

This report is part of series describing a variety of different ResStock(TM) measures. "Measures" refers to energy efficiency retrofits that can be applied to buildings during modeling. This documentation covers the "Light Envelope" measure upgrade methodology and briefly discusses key results. All results can be accessed on the ResStock Open Energy Data Initiative "End-Use Load Profiles for the U.S. Building Stock" data lake and on the data viewer at resstock.nlr.gov.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2015

Time-resolved terahertz dynamics in thin films of the topological insulator Bi 2 Se 3

We use optical pump–THz probe spectroscopy at low temperatures to study the hot carrier response in thin Bi 2 Se 3 films of several thicknesses, allowing us to separate the bulk from the surface transient response. We find that for thinner films the photoexcitation changes the transport scattering rate and reduces the THz conductivity, which relaxes within 10 picoseconds (ps). For thicker films, the conductivity increases upon photoexcitation and scales with increasing both the film thickness and the optical fluence, with a decay time of approximately 5 ps as well as a much higher scattering rate. Furthermore, these different dynamics are attributed to the surface and bulk electrons, respectively, and demonstrate that long-lived mobile surface photo-carriers can be accessed independently below certain film thicknesses for possible optoelectronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Ultra-low thermal conductivities of hot-pressed attapulgite and its potential as thermal insulation material

In the past, there have been very few reports on thermal properties of attapulgite which is a widely used clay mineral. In this work, we report on extremely low thermal conductivities in attapulgite samples synthesized by hot-pressing. Attapulgite powder was hot-pressed at different temperatures into bulk samples, and a systematic study was conducted on the microstructures and thermal properties. Differential scanning calorimetry analysis shows that hot-pressing induces a rapid dehydration of the attapulgite powders. X-ray diffraction data and scanning/transmission electron microscopy reveal that the hot-pressed attapulgite features high porosity and complex microstructures, including an amorphous phase. As a result, the hot-pressed attapulgite exhibits thermal conductivity less than 2.5Wm -1 K -1 up to 600 °C. For one sample with porosity of 45.7%, the thermal conductivity is as low as 0.34Wm -1 K -1 at 50 °C. Finally, this suggests the potential of hotpressed attapulgite as a candidate for thermal barrier materials.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Insulating gallium oxide layer produced by thermal oxidation of gallium-polar GaN: Insulating gallium oxide layer produced by thermal oxidation of gallium-polar GaN

We report the benefits of dry oxidation of n -GaN for the fabrication of metal-oxide-semiconductor structures. GaN thin films grown on sapphire by MOCVD were thermally oxidized for 30, 45 and 60 minutes in a pure oxygen atmosphere at 850 °C to produce thin, smooth GaO x layers. Moreover, the GaN sample oxidized for 30 minutes had the best properties. Its surface roughness (0.595 nm) as measured by atomic force microscopy (AFM) was the lowest. Capacitance-voltage measurements showed it had the best saturation in accumulation region and the sharpest transition from accumulation to depletion regions. Under gate voltage sweep, capacitance-voltage hysteresis was completely absent. The interface trap density was minimum (D it = 2.75×10 10 cm –2 eV –1 ) for sample oxidized for 30 mins. These results demonstrate a high quality GaO x layer is beneficial for GaN MOSFETs.

36 MATERIALS SCIENCE↗