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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Optical and electrical properties of proton-implanted p -GaSb for electrical isolation

The effect of proton implantation as isolation implant and subsequent annealing on the optical absorption and electrical resistivity of low-bandgap p -GaSb is reported. The measured transmittance spectra indicates that implantation creates a distribution of energy levels extending into the bandgap. Electrical measurements show that the average sheet resistance of the implanted layer increases only by an order of magnitude from its pre-implantation value at a proton dose of ~10 13 cm -2 followed by 200 °C annealing. It is also shown that annealing reduces the implantation-induced optical absorption while still retaining a high electrical resistivity.

42 ENGINEERING↗
NASA NTRS1978

Production technology for high efficiency ion implanted solar cells

Ion implantation is being developed for high volume automated production of silicon solar cells. An implanter designed for solar cell processing and able to properly implant up to 300 4-inch wafers per hour is now operational. A machine to implant 180 sq m/hr of solar cell material has been designed. Implanted silicon solar cells with efficiencies exceeding 16% AM1 are now being produced and higher efficiencies are expected. Ion implantation and transient processing by pulsed electron beams are being integrated with electrostatic bonding to accomplish a simple method for large scale, low cost production of high efficiency solar cell arrays.

Kirkpatrick, A. R.↗
NASA NTRS1980

A study of the factors which control the efficiency of ion-implanted silicon solar cells

The objective of this work was to determine experimentally the ion-implantation parameters and furnace annealing conditions required to produce high-efficiency solar cells. A comprehensive experimental study was conducted in which the optimum ion-implantation parameters were found by a systematic variation of the implant parameters followed by detailed studies of solar-cell devices. Two furnace heat-treatment techniques were found which effectively anneal the implanted layers and at the same time preserve or improve the diffusion length in the bulk silicon. Detailed characteristics of both the junction and bulk properties of solar cells fabricated over the spectrum of implant parameters are discussed. Optimized implant parameters and annealing conditions were found which allow for the fabrication of 14-15-percent (AM1) efficient solar cells.

Douglas, E. C.↗
NASA NTRS1981

Ion implantation of solar cell junctions without mass analysis

This paper is a summary of an investigation to determine the feasibility of producing solar cells by means of ion implantation without the use of mass analysis. Ion implants were performed using molecular and atomic phosphorus produced by the vaporization of solid red phosphorus and ionized in an electron bombardment source. Solar cell junctions were ion implanted by mass analysis of individual molecular species and by direct unanalyzed implants from the ion source. The implant dose ranged from 10 to the 14th to 10 to the 16th atoms/sq cm and the energy per implanted atom ranged from 5 KeV to 40 KeV in this study.

Fitzgerald, D.↗
NASA NTRS1984

High Curie temperature drive layer materials for ion-implanted magnetic bubble devices

Ion implantation of bubble garnets can lower the Curie temperature by 70 C or more, thus limiting high temperature operation of devices with ion-implanted propagation patterns. Therefore, double-layer materials were made with a conventional 2-micron bubble storage layer capped by an ion-implantable drive layer of high Curie temperature, high magnetostriction material. Contiguous disk test patterns were implanted with varying doses of a typical triple implant. Quality of propagation was judged by quasistatic tests on 8-micron period major and minor loops. Variations of magnetization, uniaxial anisotropy, implant dose, and magnetostriction were investigated to ensure optimum flux matching, good charged wall coupling, and wide operating margins. The most successful drive layer compositions were in the systems (SmDyLuCa)3(FeSi)5O12 and (BiGdTmCa)3(FeSi)5O12 and had Curie temperatures 25-44 C higher than the storage layers.

Fratello, V. J.↗
NASA NTRS1986

Effect of low-energy hydrogen ion implantation on dendritic web silicon solar cells

The effect of a low-energy (0.4 keV), short-time (2-min), heavy-dose (10 to the 18th/sq cm) hydrogen ion implant on dendritic web silicon solar cells and material was investigated. Such an implant was observed to improve the cell open-circuit voltage and short-circuit current appreciably for a number of cells. In spite of the low implant energy, measurements of internal quantum efficiency indicate that it is the base of the cell, rather than the emitter, which benefits from the hydrogen implant. This is supported by the observation that the measured minority-carrier diffusion length in the base did not change when the emitter was removed. In some cases, a threefold increase of the base diffusion length was observed after implantation. The effects of the hydrogen implantation were not changed by a thermal stress test at 250 C for 111 h in nitrogen. It is speculated that hydrogen enters the bulk by traveling along dislocations, as proposed recently for edge-defined film-fed growth silicon ribbon.

Rohatgi, A.↗
NASA NTRS1986

Use of low-energy hydrogen ion implants in high-efficiency crystalline-silicon solar cells

The use of low-energy hydrogen implants in the fabrication of high-efficiency crystalline silicon solar cells was investigated. Low-energy hydrogen implants result in hydrogen-caused effects in all three regions of a solar cell: emitter, space charge region, and base. In web, Czochralski (Cz), and floating zone (Fz) material, low-energy hydrogen implants reduced surface recombination velocity. In all three, the implants passivated the space charge region recombination centers. It was established that hydrogen implants can alter the diffusion properties of ion-implanted boron in silicon, but not ion-implated arsenic.

Fonash, S. J.↗
NASA NTRS1999

The Biolink Implantable Telemetry System

Most biotelemetry applications deal with the moderated data rates of biological signals. Few people have studied the problem of transcutaneous data transmission at the rates required by NASA's Life Sciences-Advanced BioTelemetry System (LS-ABTS). Implanted telemetry eliminate the problems associated with wire breaking the skin, and permits experiments with awake and unrestrained subjects. Our goal is to build a low-power 174-216MHz Radio Frequency (RF) transmitter suitable for short range biosensor and implantable use. The BioLink Implantable Telemetry System (BITS) is composed of three major units: an Analog Data Module (ADM), a Telemetry Transmitter Module (TTM), and a Command Receiver Module (CRM). BioLink incorporates novel low-power techniques to implement a monolithic digital RF transmitter operating at 100kbps, using quadrature phase shift keying (QPSK) modulation in the 174-216MHz ISM band. As the ADM will be specific for each application, we focused on solving the problems associated with a monolithic implementation of the TTM and CRM, and this is the emphasis of this report. A system architecture based on a Frequency-Locked Loop (FLL) Frequency Synthesizer is presented, and a novel differential frequency that eliminates the need for a frequency divider is also shown. A self sizing phase modulation scheme suitable for low power implementation was also developed. A full system-level simulation of the FLL was performed and loop filter parameters were determined. The implantable antenna has been designed, simulated and constructed. An implant package compatible with the ABTS requirements is also being proposed. Extensive work performed at 200MHz in 0.5um complementary metal oxide semiconductors (CMOS) showed the feasibility of integrating the RF transmitter circuits in a single chip. The Hajimiri phase noise model was used to optimize the Voltage Controlled Oscillator (VCO) for minimum power consumption. Two test chips were fabricated in a 0.5pm, 3V CMOS process. Measured phase noise for a 1.5mW, 200MHz ring oscillator VCO is -80dBc/Hz at 100KHZ offset, showing good agreement with the theory. We also propose a novel superregenerative receiver architecture for implementing the command receiver. The superregenerative receiver's simplicity, low cost, and low power consumption has made it the receiver of choice for short-distance data communications, remote control and home automation. We present the design of a superregenerative AM receiver implemented in a 0.5um CMOS technology that operates at 433.92MHz and dissipates only 300uW. Further work entails detailed transistor-level design of the FLL and superregenerative receiver and a monolithic implementation of an implantable transceiver in 0.5um CMOS technology.

Betancourt-Zamora, Rafael J.↗
NASA NTRS1998

Fabrication and Characterization of Thin Film Ion Implanted Composite Materials for Integrated Nonlinear Optical Devices

Ion implantation has been shown to produce a high density of metal colloids within the layer regions of glasses and crystalline materials. The high-precipitate volume fraction and small size of metal nanoclusters formed leads to values for the third-order susceptibility much greater than those for metal doped solids. This has stimulated interest in use of ion implantation to make nonlinear optical materials. On the other side, LiNbO3 has proved to be a good material for optical waveguides produced by MeV ion implantation. Light confinement in these waveguides is produced by refractive index step difference between the implanted region and the bulk material. Implantation of LiNbO3 with MeV metal ions can therefore result into nonlinear optical waveguide structures with great potential in a variety of device applications. We describe linear and nonlinear optical properties of a waveguide structure in LiNbO3-based composite material produced by silver ion implantation in connection with mechanisms of its formation.

Sarkisov, S.↗
DOE OSTI2014

Implantable biomedical devices on bioresorbable substrates

Provided herein are implantable biomedical devices, methods of administering implantable biomedical devices, methods of making implantable biomedical devices, and methods of using implantable biomedical devices to actuate a target tissue or sense a parameter associated with the target tissue in a biological environment. Each implantable biomedical device comprises a bioresorbable substrate, an electronic device having a plurality of inorganic semiconductor components supported by the bioresorbable substrate, and a barrier layer encapsulating at least a portion of the inorganic semiconductor components. Upon contact with a biological environment the bioresorbable substrate is at least partially resorbed, thereby establishing conformal contact between the implantable biomedical device and the target tissue in the biological environment.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2015

Plasma immersion ion implantation for the efficient surface modification of medical materials

The paper reports on a new method of plasma immersion ion implantation for the surface modification of medical materials using the example of nickel-titanium (NiTi) alloys much used for manufacturing medical implants. The chemical composition and surface properties of NiTi alloys doped with silicon by conventional ion implantation and by the proposed plasma immersion method are compared. It is shown that the new plasma immersion method is more efficient than conventional ion beam treatment and provides Si implantation into NiTi surface layers through a depth of a hundred nanometers at low bias voltages (400 V) and temperatures (≤150°C) of the substrate. The research results suggest that the chemical composition and surface properties of materials required for medicine, e.g., NiTi alloys, can be successfully attained through modification by the proposed method of plasma immersion ion implantation and by other methods based on the proposed vacuum equipment without using any conventional ion beam treatment.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Engineering Electrical Transport by Implantation‐Induced Defects in CrN Films Without Affecting Thermal Conductivity

The transport properties of CrN thin films deposited on sapphire have been tailored through structural modifications induced by cumulative argon implantation. As-grown samples experience the typical structural transition in CrN films from orthorhombic at low temperature to cubic above the Néel temperature (≈280 K) and exhibit a metallic-like conduction in both phases. With increasing implantation dose, the conduction mode shifts to a semiconductor-like behavior in both phases, albeit at different damage levels. Analysis of the results suggests that hopping conduction becomes dominant beyond a given damage threshold. The results highlight a promising correlation between defect engineering and conduction mechanisms, offering valuable insights into the versatile electrical properties of CrN films. These implantation-induced defects scatter carriers, leading to a decrease in their mobility. As the implantation dose increases, the defect landscape evolves, modifying the density of states. However, up to a dose of 0.050 dpa, no significant influence on phonon scattering is observed. This approach demonstrates that ion implantation enables precise tuning of CrN's electrical properties without affecting thermal conductivity, offering valuable insights into defect engineering in transition metal nitrides and underscoring its potential for transport properties decorrelation.

defects↗
DOE OSTI2019

Tribo-corrosion and Albumin Attachment of Nitrogen Ion-Implanted CoCrMo Alloy During Friction Onset

In this paper, CoCrMo alloy surface was implanted with 100 keV nitrogen ions to modify it. Bovine serum albumin (BSA) adsorption and the initial behavior of tribo-corrosion in the simulated system were studied. Nitrogen ion implantation can promote BSA dynamic adsorption due to the change of friction and wear mechanisms. From the tribo-corrosion test results, the open circuit potential (OCP) increased to about 0.6 V and the coefficient of friction (COF) decreased to about 0.2 for the nitrogen ion-implanted CoCrMo compared with the untreated sample before the modified layer failure. The point when the open circuit potential and the coefficient of friction changed during long wear time (1, 2 and 4 h) is considered the sign of the worn through modified layer. Then, the OCP of the implanted sample rose by 0.3 V compared with the untreated sample, and the COF remained at around 0.3, which is lower compared with the COF of untreated sample after the modified layer has been worn through. Thus, nitrogen ion implantation not only improved wear and corrosion resistance of the CoCrMo alloy, but also promoted BSA adsorption on the CoCrMo alloy surface, which effectively reduced the wear volume and metal ions release.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Effects of Zr Ion Implantation on Surface Mechanical Properties and Corrosion Resistance of Pure Magnesium

Zirconium (Zr) was implanted into pure Mg by metal vapor vacuum arc (MEVVA) at the dose of 2 × 10{sup 16} ions/cm{sup 2} at room temperature. The surface characteristics of Zr-implanted Mg were analyzed by the Stopping and Range of Ions in Matter software (SRIM) and x-ray photoelectron spectroscopy (XPS), the surface nanohardness and tribological behavior were measured through nanoindentation and a friction-abrasion testing machine, and the corrosion resistance of Zr-implanted Mg was evaluated by electrochemical measurement and immersion test in simulated body fluid (SBF). The results demonstrated that a gradient modified layer composed of MgO, Mg(OH){sub 2}, ZrO{sub 2} and Zr was formed on the near surface of pure Mg and the nanohardness of pure Mg was improved by 48%. Furthermore, the Zr-implanted Mg exhibited a more positive corrosion potential of − 1.43 V (versus SCE) and a lower corrosion current density of 19.9 μA/cm{sup 2}, and localized corrosion was effectively retarded during 24 h immersion in SBF, suggesting that the corrosion resistance of pure Mg was remarkably improved after Zr ion implantation. The mechanisms of surface strengthening and improved corrosion resistance were also discussed in this paper.

36 MATERIALS SCIENCE↗
DOE OSTI2017

1α,25-Dihydroxyvitamin D3 increases implant osseointegration in diabetic mice partly through FoxO1 inactivation in osteoblasts

Highlights: • FoxO1 ablation in osteoblasts favors glucose homeostasis in diabetic mice. • 1,25(OH){sub 2}D{sub 3} regulates glucose and bone metabolism partly through inactivation of FoxO1. • FoxO1 inhibitor may be a novel approach to enhance implant osseointegration. Oral implant osseointegration is delayed by hyperglycemia-generated oxidative stress (OS). Forkhead transcription factor 1 (FoxO1) is known to be viewed as a sensor to OS since reactive oxide species like H{sub 2}O{sub 2} regulates its activity. We previously demonstrated that 1,25(OH){sub 2}D{sub 3} favored glucose homeostasis and implant osseointegration in diabetic rats. In this study, we investigated the role of FoxO1{sub OB} in the regulation process of 1,25(OH){sub 2}D{sub 3} on glycometabolism and bone metabolism. We show herein that, with the treatment of 1,25(OH){sub 2}D{sub 3}, mice lacking FoxO1 in osteoblasts (FoxO1{sub OB}{sup −/-}) exhibited decreased serum glucose that was gradually elevated in untreated diabetic mice. An optimal increase of bone mass and bone-implant contact (BIC) was observed in 1,25(OH){sub 2}D{sub 3} treated FoxO1{sub OB}{sup −/-} mice after 2-month healing. Surprisingly, FoxO1{sub OB}{sup −/-} mice without 1,25(OH){sub 2}D{sub 3} treatment also showed an improvement on bone formation and BIC. Same effect could be found in the expression of bone-related markers Runx2, Osterix and BSP, which elevated in 1,25(OH){sub 2}D{sub 3} treated FoxO1{sub OB}{sup −/-} mice as compared to untreated WT mice. In addition, in vitro study showed that high glucose induced FoxO1 nuclear localization while the effect was ameliorated by 1,25(OH){sub 2}D{sub 3} treatment. These results suggest that FoxO1{sub OB} might be involved in the regulation of 1,25(OH){sub 2}D{sub 3} on glucose homeostasis and bone formation, and that FoxO1{sub OB} might act as a key modulator of the capacity of the skeleton regulating metabolic homeostasis. Our study also provides a new idea that a combination of systemic 1,25(OH){sub 2}D{sub 3} and local FoxO1 inhibitor may be a new approach to enhance implant osseointegration.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2016

Seed Placement in Permanent Breast Seed Implant Brachytherapy: Are Concerns Over Accuracy Valid?

Purpose: To evaluate seed placement accuracy in permanent breast seed implant brachytherapy (PBSI), to identify any systematic errors and evaluate their effect on dosimetry. Methods and Materials: Treatment plans and postimplant computed tomography scans for 20 PBSI patients were spatially registered and used to evaluate differences between planned and implanted seed positions, termed seed displacements. For each patient, the mean total and directional seed displacements were determined in both standard room coordinates and in needle coordinates relative to needle insertion angle. Seeds were labeled according to their proximity to the anatomy within the breast, to evaluate the influence of anatomic regions on seed placement. Dosimetry within an evaluative target volume (seroma + 5 mm), skin, breast, and ribs was evaluated to determine the impact of seed placement on the treatment. Results: The overall mean (±SD) difference between implanted and planned positions was 9 ± 5 mm for the aggregate seed population. No significant systematic directional displacements were observed for this whole population. However, for individual patients, systematic displacements were observed, implying that intrapatient offsets occur during the procedure. Mean displacements for seeds in the different anatomic areas were not found to be significantly different from the mean for the entire seed population. However, small directional trends were observed within the anatomy, potentially indicating some bias in the delivery. Despite observed differences between the planned and implanted seed positions, the median (range) V{sub 90} for the 20 patients was 97% (66%-100%), and acceptable dosimetry was achieved for critical structures. Conclusions: No significant trends or systematic errors were observed in the placement of seeds in PBSI, including seeds implanted directly into the seroma. Recorded seed displacements may be related to intrapatient setup adjustments. Despite observed seed displacements, acceptable postimplant dosimetry was achieved.

62 RADIOLOGY AND NUCLEAR MEDICINE↗
DOE OSTI2017

Long-Term Results of a Randomized Trial Comparing Iridium Implant Plus External Beam Radiation Therapy With External Beam Radiation Therapy Alone in Node-Negative Locally Advanced Cancer of the Prostate

Purpose: To determine the impact on long-term survival from the addition of brachytherapy to external beam radiation therapy (EBRT) in patients with prostate cancer. Methods and Materials: Between 1992 and 1997, 104 men with cT2-3, surgically staged node-negative prostate cancer were randomized to receive either EBRT (40 Gy/20 fractions) with iridium implant (35 Gy/48 hours) or EBRT alone (66 Gy/33 fractions) to the prostate. According to T stage, Gleason score, and prostate-specific antigen level, 60% of patients had high-risk disease. Substantial improvements in biochemical control at 8 years have previously been reported. Additional follow-up was collected on deaths and metastases. Results: Median follow-up was 14 years. Five patients were lost to follow-up. All other patients have been followed a minimum of 13 years. There have been 75 deaths, including 21 from prostate cancer and 25 from second cancers. No patients developing a second cancer have died from prostate cancer. There was no difference in overall survival between the 2 treatment groups: 34 deaths (67%) in the implant arm and 41 (77%) in the EBRT arm (hazard ratio [HR] 1.00, 95% confidence interval [CI] 0.63-1.59). Similarly, there was no difference in prostate cancer–specific deaths: 9 (18%) patients in the implant arm compared with 12 (23%) in the EBRT arm (HR 0.79, 95% CI 0.34-1.87). There was no statistically significant difference in the number of patients developing metastatic disease: 10 (20%) in the implant arm and 15 (28%) in the EBRT arm (HR 0.70, 95% CI 0.32-1.57). Improvements in biochemical control were maintained (HR 0.53, 95% CI 0.31-0.88). Conclusions: Despite a dramatic reduction of biochemical recurrence rates, the addition of iridium implant to EBRT did not translate into improved overall survival or prostate cancer–specific survival.

62 RADIOLOGY AND NUCLEAR MEDICINE↗
DOE OSTI2018

Modeling the impact of radiation-enhanced diffusion on implanted ion profiles

We report that ion irradiations are a valuable research tool for exploring radiation effects in materials. However, it is well recognized that the implanted ions can artificially modify the radiation damage evolution, e.g., enhancing amorphization processes at low irradiation temperatures and suppressing void swelling at elevated temperatures. Therefore, the implanted ion region should be avoided for most studies of ion irradiated materials. Due to increased interest in high damage, high temperature ion irradiations studying radiation effects in materials for proposed high dose Generation IV fission and fusion energy applications, it is crucial to quantify the extent of diffusional broadening of the implanted ion profile for a variety of temperatures, irradiation fluxes, and sink strengths. The present study summarizes computational analyses of thermal and depth-dependent radiation enhanced difusion (RED) on diffusion broadening of the implanted ion profiles in Fe and Ni for a variety of irradiation conditions. For a low assumed RED coefficient (10 -20 -10 -19 m 2 /s and 10 -4 and 10 -3 peak dpa/s, respectively) or high flux, broadening of the as-implanted ion profile is very small and a suitable artifact-free midrange region for analysis exists for ion energies above 5-6 MeV at 100 peak dpa. At high RED coefficients (10 -19 -10 -18 m 2 /s and 10 -4 and 10 -3 peak dpa/s, respectively) broadening is much more significant, and no valid region for investigation exists below 6-8 MeV ion energies at any damage level >50 dpa. While increasing flux decreases irradiation time, it also increases the RED coefficient; these effects mostly offset except under recombination-dominant conditions. For typical high dose irradiation studies of void swelling that exceed ~100 displacement per atom (dpa), ion energies > 6-8 MeV must be employed in order to achieve suitable artifact-free midrange irradiation analysis regions, depending on the material system. Lastly, analysis of amorphization/precipitation require even higher energies (>10 MeV).

07 ISOTOPE AND RADIATION SOURCES↗