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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

The Quantum Nature of the Neutrino

Over the last 100 years we have learned much about the neutrino, but there remain interesting questions about this weakly interacting particle. In particular, at LLNL we are developing an experiment to measure the quantum nature of the neutrino. The 2015 long range plan recom mended tonne-scale neutrinoless double beta decay experiments as the top new project priority and this experiment will target the quantum nature of the neutrino. The LLNL team is motivated and focused on developing the best technology for this experiment which is a liquid xenon time projection chamber called nEXO. Work on nEXO at LLNL started in 2015 with an LDRD and program development funds to de velop the nEXO concept, publish sensitivity predictions, explore alternatives and risks, and to build a credible project team and this effort is on going. In addition, we received research funding from DOE-SC NP and LLNL manages pre-conceptual R&D for the nEXO collaboration a portion of which is executed at LLNL. LLNL has a long history of building large projects, science projects and time projection chambers, but nEXO is in fact the first project of this scale that LLNL is prepared to lead for DOE-SC NP. We have the tools, skills, people and motivation to make nEXO a reality. The current program devel opment dollars are used to prepare the nEXO concept for down select and CD1. These internal LLNL dollars pay for a number of things including project staff to organize the nEXO collaboration for the various reviews, to develop the draft plans and structure to manage the project as well as setting up external advisory committees. The DOE-SC NP base funding is targeted at simulation and analysis of the nEXO concept in preparation for the down select and refinement of the under standing of the detector as well as scientific effort on the large xenon test stand (LXTS) that will burn down one of the largest risks to the nEXO project. Lastly, LLNL is leading the pre-conceptual R&D effort and managing the funds for the nEXO collaboration. LLNL continues to build the best scientific team for nEXO and this year that includes adding Ethan Bernard to lead the efforts on the LXTS. We will also soon add a new postoc, Samuel Hedges, in the fall to the LLNL nEXO team. The effort this year was influenced by the portfolio review, and there were a number of scientific activities led by LLNL to prepare for this review. In addition, we again took a lead role on the new sensitivity paper as well as publishing a paper based analyzing the effects of skin xenon in nEXO. LLNL leads the software and analysis for the project and we continued work in this area as well. High voltage remains a significant risk for the project and we continue to make progress on the LXTS that will mitigate this risk. Lastly we remain active in looking at how to scale the technology to larger scales, and expect to produce a paper on this topic in the near future.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2020

Measurements of Single Event Upset in ATLAS IBL

Effects of Single Event Upsets (SEU) and Single Event Transients (SET) are studied in the FE-I4B chip of the innermost layer of the ATLAS pixel system. SEU/SET affect the FE-I4B Global Registers as well as the settings for the individual pixels, causing, among other things, occupancy losses, drops in the low voltage currents, noisy pixels, and silent pixels. Quantitative data analysis and simulations indicate that SET dominate over SEU on the load line of the memory. Operational issues and mitigation techniques are presented.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Noble Liquid Test Facility at Fermilab

The Noble Liquid Test Facility (NLTF) at Fermilab is a liquid argon detector R\&D facility open to the national and international HEP community. The facility consists of 4 permanent cryostats, ranging from 250L up to 3000L, open space for small open dewar testing, and an optical test stand facility capable of measuring the optical properties of materials and characterizing photon detectors. NLTF’s strongest advantage is its capability to provide ultra-pure LAr in a reliable manner. Its inline filters are capable of filtering all of the three biggest contaminants for standard LAr detectors, O$_2$ and H$_2$O down to $< 1$ppb and N$_2$ $< 1$ppm. This is critical for the users of the test stands as small levels of impurities can dramatically change the efficiency of LArTPCs for the collection of charge and light. The smallest cryostat is mainly used for material testing, a service provided to the international HEP community interested in understanding how the introduction of a specific material might affect the electron lifetime in LAr. The test stands can be equipped with a purity monitor, which allows measuring the electron lifetime in real time, as well as gas sampling and analyzing, and in the near future, local recirculation and filtering. The facility has hosted many successful R\&D projects, which have published their results in well-known journals and talks. A few examples of such projects are: NIR light production in LAr and GAr, the characterization of VUV metalenses, the testing of new filter media capable of filtering N$_2$ from LAr, high voltage studies and direct charge amplification in LAr, and various doping studies.

Blaszczyk, Flor María [Fermilab]↗
DOE OSTI2022

Performance Before and After Irradiation of Pixelated 3D Silicon Sensors for the HL-LHC CMS Tracker

The Large Hadron Collider (LHC) particle accelerator at European Center for Nuclear Research (CERN) will be shut down starting in 2026 to achieve the High Luminosity Large Hadron Collider (HL-LHC) upgrade. The upgrade will allow for higher fluences, in order to increase the probability of detecting increasingly rare particles, and to obtain higher precision measurements of known particles. To accommodate the new accelerator conditions, many aspects of the Compact Muon Solenoid (CMS) detector will be upgraded; of particular interest for this thesis are the silicon pixel detectors located in the inner tracker. These will be replaced and upgraded to accommodate the higher fluences of the HL-LHC upgrade, as well as to replace existing sensors which have sustained radiation damage. In order for the new sensors to operate under high luminosity conditions, they must be increasingly radiation hard, and in order to detect rare particles, they must be increasingly more precise. The performance of one Centro Nacional de Microelectronica (CNM) 3D silicon sensor before and after undergoing irradiation at fluences similar to those which will be observed at the HL-LHC was investigated to determine radiation hardness and precision. Data was collected at Fermi National Laboratory (Fermilab), in the Fermi National Laboratory Test Beam Facility (FTBF) silicon tracker telescope, which can be used to determine the number of particles, and tracks made by high energy protons passing through. The sensor was also irradiated at Fermilab in the Irradiation Test Area (ITA). Prior to data collection a tuning procedure is carried out to determine ideal bias voltage operating conditions, mask noisy and dead pixels, adjust to the ideal threshold, and map sensor gain. Data is then collected at the FTBF, where the sensor is installed in the center of the FTBF silicon telescope. Variables, including angle and bias voltage, are varied throughout data collection. Data is then processed using an alignment software to determine the exact telescope geometry, along with the tracks which were observed passing through the sensor and telescope. Sensor performance was found to be comparable before and after irradiation, with irradiated results showing slightly lower efficiencies and cluster sizes. Position resolution is comparable both before and after irradiation, and similar distributions of cluster shape are observed. After irradiation, the sensor shows increasing collected charge with bias, an indication of increased width of the depletion region. Peak charge pre-irradiation is higher than post-irradiation peak charge, indicating the irradiated results are not taken under fully-depleted conditions.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

Initial tests of large format sensors for the ATLAS ITk strip tracker

For the construction of the Inner Tracker (ITk) as part of the phase-II upgrade programme of the ATLAS detector for the High-Luminosity (HL) LHC, batches of Long Strip (LS) and Short Strip (SS) n + -in-p type micro-strip sensors have been produced by Hamamatsu Photonics and Infineon. The full size sensors measure approximately 98 × 98 mm 2 and are designed and engineered for tolerance against the 9.7 × 10 14 1 MeV n eq /cm 2 fluence expected at the HL-LHC, including a safety factor of 1.5. Each sensor has 2 or 4 columns of 1280 individual channels arranged at 75.5 μ m horizontal pitch. To ensure the sensors comply with their specifications, a Quality Control (QC) procedure has been implemented, comprising measurements on every individual sensor as well as on a sample basis. Every sensor is subjected to an initial visual inspection, after which the full surface of the sensor is captured with very high resolution by an automated camera setup. Non-contact metrology is performed to obtain the sensor surface profile. Electrical measurements establishing the reverse bias leakage current and depletion voltage are then conducted automatically. Sample sensors from every batch are subjected to 40 h of leakage stability checks in controlled atmosphere, and tests on every channel measuring leakage current, coupling capacitance and bias resistance are done. The recorded results are uploaded to a production database following data quality checks. In this paper, QC test validation data and the compiled results for the first batches of production grade sensors are presented. The QC protocol was validated, and the first production sensors were confirmed to be within specification. The results are compared to those from the previous generation of prototype sensors.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2024

Time-resolved synchrotron light source X-ray detection with Low-Gain Avalanche Diodes

Low Gain Avalanche Diodes (LGADs) represent the state-of-the-art in timing measurements and will instrument future timing detectors at the High Luminosity Large Hadron Collider (HL-LHC) experiments. While conceived as a sensor for charged particles, the intrinsic gain of LGADs makes it possible to detect low energy X-rays with good energy resolution and excellent timing (tens of picoseconds). Here, using the Stanford Synchrotron Radiation Lightsource (SSRL) at SLAC, several LGADs designs were characterized with energies from 5 to 35 keV. The SSRL provides 10 ps pulsed X-ray bunches separated by 2.1 ns intervals, and with an energy dispersion (ΔE/E) of 1 X 10 -4 . LGADs fabricated by Hamamatsu Photonics (HPK) and Brookhaven National Laboratory (BNL) with different thicknesses ranging from 20 µm to 50 µm and different gain layer designs were read out a two stage fast amplification circuit and digitized with a high bandwidth, high sampling rate oscilloscope. PIN devices from HPK were characterized as well. A systematic and detailed characterization of the devices’ energy linearity, resolution and timing resolution as a function of X-ray energy was performed for different biasing voltages at room temperature

Charge multiplication↗
DOE OSTI2023

Synchrotron light source X-ray detection with Low-Gain Avalanche Diodes

Abstract Low Gain Avalanche Diodes (LGADs) represent the state-of-the-art in timing measurements and will instrument the future Timing Detectors of ATLAS and CMS for the High-Luminosity LHC. While initially conceived as a sensor for charged particles, the intrinsic gain of LGADs makes it possible to detect low-energy X-rays with good energy resolution and excellent time resolution (tens of picoseconds). Using the Stanford Synchrotron Radiation Lightsource (SSRL) at SLAC, several LGADs designs were characterized with energies from 5 to 70 keV. The SSRL provides 10 ps pulsed X-ray bunches separated by 2 ns intervals with an energy dispersion (ΔE/E) of 10 -4 . LGADs from Hamamatsu Photonics (HPK) and Brookhaven National Laboratory (BNL) with different thicknesses ranging from 20 μm to 50 μm and different gain layer designs were read out using fast amplification boards and digitized with a high bandwidth and high sampling rate oscilloscope. PIN devices from HPK and AC-LGADs from BNL were characterized as well. A systematic and detailed characterization of the devices' energy linearity, resolution, and time resolution as a function of X-ray energy was performed for different biasing voltages at room temperature and are reported in this work. The charge collection and multiplication mechanism were simulated using Geant4 and TCAD Sentaurus, providing an important handle for interpreting the data.

Instruments & Instrumentation↗
DOE OSTI2025

The CMS Phase-2 Fast Beam Condition Monitor prototype test with beam

The Fast Beam Condition Monitor (FBCM) is a standalone luminometer for the High Luminosity LHC (HL-LHC) program of the CMS Experiment at CERN. The detector is under development and features a new, radiation-hard, front-end application-specific integrated circuit (ASIC) designed for beam monitoring applications. The achieved timing resolution of a few nanoseconds enables the measurement of both the luminosity and the beam-induced background. The ASIC, called FBCM23, features six channels with adjustable shaping times, enabling in-field fine-tuning. Each ASIC channel outputs a single binary asynchronous signal encoding time-of-arrival and time-over-threshold information. The FBCM is based on silicon-pad sensors, with two sensor designs presently being considered. This paper presents the results of tests of the FBCM detector prototype using both types of silicon sensors with hadron, muon, and electron beams. Irradiated FBCM23 ASICs and silicon-pad sensors were also tested to simulate the expected conditions near the end of the detector's lifetime in the HL-LHC radiation environment. Based on test results, direct bonding between the sensor and ASIC was chosen, and an optimal bias voltage and ASIC threshold for FBCM operation were proposed. The current design of the front-end test board was validated following the beam test and is now being used for the first front-end module, which is expected to be produced in summer 2025. These results represent a major step forward in validating the FBCM concept, first version of the firmware and establishing a reliable design path for the final detector.

Beam-line instrumentation (beam position and profi↗
DOE OSTI2020

Evaluation of radiation hardness of High-Voltage silicon vertical JFETs

In the future ATLAS Inner Tracker, each silicon strip module will be equipped with a switch able to separate the high voltage supply from the sensor in case the latter becomes faulty. The switch, placed in between the HV supply and the sensor, needs to sustain a high voltage in its OFF state, to offer a low resistance path for the sensor leakage current in the ON state, and be radiation hard up to 1.2 * 10 15 neq/cm 2 along with other requirements. While GaN JFETs have been selected as suitable rad-hard switch, a silicon vertical HV-JFET was developed by Brookhaven National Laboratory as an alternative option. Pre-irradiation results showed the functionality of the device and proved that the silicon HV-JFET satisfied the pre-irradiation requirements for the switch. To assess its suitability after irradiation, a few p-type HV-JFETs have been neutron irradiated at Jozef Stefan Institute (JSI, Ljubljana, Slovenia). Overall, this paper reports the static characterization of these irradiated devices and the TCAD numerical simulations used to get an insight of the physics governing the post-irradiation behaviour.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Characterization of proton-induced damage in thick, p-channel skipper-CCDs

Here, in this work, we characterize the radiation-induced damage in two thick, p-channel skipper-CCDs irradiated unbiased and at room temperature with 217-MeV protons. We evaluate the overall performance of the sensors and demonstrate their single-electron/single-photon sensitivity after receiving a fluence on the order of 10 10 protons/cm 2 . Using the pocket-pumping technique, we quantify and characterize the proton-induced defects from displacement damage. We report an overall trap density of 0.134 traps/pixel for a displacement damage dose of 2.3 × 10 7 MeV/g. Three main proton-induced trap species were identified, V 2 , C i O i and V n O m , and their characteristic trap energies and cross sections were extracted. We found that while divacancies are the most common proton-induced defects, C i O i defects have a greater impact on charge integrity at typical operating temperatures because their emission-time constants are comparable or larger than typical readout times. To estimate ionization damage, we measure the characteristic output transistor curves. We found no threshold voltage shifts after irradiation. Our results highlight the potential of skipper-CCDs for applications requiring high-radiation tolerance and can be used to find the operating conditions in which effects of radiation-induced damage are mitigated.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Charge collection and electrical characterization of neutron irradiated silicon pad detectors for the CMS High Granularity Calorimeter

The replacement of the existing endcap calorimeter in the Compact Muon Solenoid (CMS) detector for the high-luminosity LHC (HL-LHC), scheduled for 2027, will be a high granularity calorimeter. It will provide detailed position, energy, and timing information on electromagnetic and hadronic showers in the immense pileup of the HL-LHC. The High Granularity Calorimeter (HGCAL) will use 120-, 200-, and 300-$\mu\textrm{m}$ thick silicon (Si) pad sensors as the main active material and will sustain 1-MeV neutron equivalent fluences up to about $10^{16}~\textrm{n}_\textrm{eq}\textrm{cm}^{-2}$. In order to address the performance degradation of the Si detectors caused by the intense radiation environment, irradiation campaigns of test diode samples from 8-inch and 6-inch wafers were performed in two reactors. Characterization of the electrical and charge collection properties after irradiation involved both bulk polarities for the three sensor thicknesses. Since the Si sensors will be operated at -30 $^\circ$C to reduce increasing bulk leakage current with fluence, the charge collection investigation of 30 irradiated samples was carried out with the infrared-TCT setup at -30 $^\circ$C. TCAD simulation results at the lower fluences are in close agreement with the experimental results and provide predictions of sensor performance for the lower fluence regions not covered by the experimental study. All investigated sensors display 60$\%$ or higher charge collection efficiency at their respective highest lifetime fluences when operated at 800 V, and display above 90$\%$ at the lowest fluence, at 600 V. The collected charge close to the fluence of $10^{16}~\textrm{n}_\textrm{eq}\textrm{cm}^{-2}$ exceeds 1 fC at voltages beyond 800 V.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Gain characterization of LGAD sensors with beta particles and 28-MeV protons

Low Gain Avalanche Diodes, also known as LGADs, are widely considered for fast-timing applications in high energy physics, nuclear physics, space science, medical imaging, and precision measurements of rare processes. Such devices are silicon-based and feature an intrinsic gain due to a p + -doped layer that allows the production of a controlled avalanche of carriers, with multiplication on the order of 10–100. This technology can provide time resolution on the order of 20–30 ps, and variants of this technology can provide precision tracking too. The characterization of LGAD performance has so far primarily been focused on the interaction of minimum ionizing particles for high energy and nuclear physics applications. This article expands the study of LGAD performance to highly-ionizing particles, such as 28-MeV protons, which are relevant for several future scientific applications, e.g. in biology and medical physics, among others. These studies were performed with a beam of 28-MeV protons from a tandem Van de Graaff accelerator at Brookhaven National Laboratory and beta particles from a ^90Sr source; these were used to characterize the response and the gain of an LGAD as a function of bias voltage and collected charge. Here, the experimental results are also compared to TCAD simulations.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

AstroPix4 — a novel HV-CMOS sensor developed for space based experiments

For the proposed space based gamma-ray observatory All-sky Medium-Energy Gamma-ray Observatory eXplorer (AMEGO-X), a silicon tracker based on a novel High Voltage-CMOS (HV-CMOS) sensor called AstroPix, is currently being developed. Preliminary measurements with the first full reticle prototype AstroPix3 show that the power target of 1.5 mW/cm 2 can currently not be reached due to the digital consumption of 3.08 mW/cm 2 , while the analog power consumption of 1.04 mW/cm 2 and a break down voltage of over 350 V look promising. Based on these results, the design changes in AstroPix4, submitted in May 2023, are presented, containing changes to the time stamp generation and readout architecture. A digital power consumption below 0.25 mW/cm 2 is expected by removing the fast 200 MHz clock used to measure the time-over-threshold (ToT) and an LVDS receiver. A maximum resolution of 3.125 ns for time-of-arrival (ToA) and ToT is reached by adding per-pixel Flash-Time-to-Digital Converter (TDCs) controlled by a global delay-locked loop (DLL).

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Impact of dopant-induced band tails on optical spectra, charge carrier transport, and dynamics in single-crystal CdTe

Abstract Cadmium telluride (CdTe) semiconductors are used in thin-film photovoltaics, detectors, and other optoelectronic applications. For all technologies, higher efficiency and sensitivity are achieved with reduced charge carrier recombination. In this study, we use state-of-the-art CdTe single crystals and electro-optical measurements to develop a detailed understanding of recombination rate dependence on excitation and temperature in CdTe. We study recombination and carrier dynamics in high-resistivity (undoped) and arsenic (As)-doped CdTe by employing absorption, the Hall effect, time-resolved photoluminescence, and pump-probe in the 80–600 K temperature range. We report extraordinarily long lifetimes (30 µs) at low temperatures in bulk undoped CdTe. Temperature dependencies of carrier density and mobility reveal ionization of the main acceptors and donors as well as dominant scattering by ionized impurities. We also distinguish different recombination defects. In particular, shallow As Te and deep V Cd −As Cd acceptors were responsible for p-type conductivity. AX donors were responsible for electron capture, while nonradiative recombination centers (V Cd −As Te , As 2 precipitates), and native defects (V Cd −Te Cd ) were found to be dominant in p-type and n-type CdTe, respectively. Bimolecular and surface recombination rate temperature dependencies were also revealed, with bimolecular coefficient T −3/2 temperature dependence and 170 meV effective surface barrier, leading to an increase in surface recombination velocity at high temperatures and excitations. The results of this study allowed us to conclude that enhanced crucible rotation growth of As-doped CdTe is advantageous to As activation, leading to longer lifetimes and larger mobilities and open-circuit voltages due to lower absorption and trapping.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Perovskite Grown in Gallium Nitride Nanowire Matrix for Stable and High‐Efficiency X‐Ray Detection

High-quality quasi-2D perovskites in a GaN nano-wire matrix are grown to build a 3D hetero-structure for high-performance X-ray sensing. In the 3D hetero-structure, GaN nano-wire matrix serves as an n-type charge collector that can rapidly extract carriers through the bulk film of the perovskite layer. Together with a p-type top electrode, a p–i–n diode with the 3D hetero-structure is built, that exhibits a rectified current–voltage characteristic. After analyzing the interface energy alignment, it is found that the fermi levels of the perovskite and GaN are aligned in the dark, and a quasi-fermi level splits upon illumination, introducing a built-in electrical field at the interface. As a result, strong photo-induced current is observed from the diode without an external field. Finally, the 3D diode for X-ray detection demonstration is used, revealing a sensitivity of 308.9 µC Gy air -1 cm -2 at an exceptionally low applied field of 0.125 V µm -1 . The X-ray-induced signal from the 3D diode is stable after 155 cycles of X-ray irradiation under a constant electric field. This demonstration informs a new 3D architecture for high-performance X-ray sensing, and it shows that GaN is a robust n-type interface for perovskite optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Pulse shape measurements for neutron/gamma discrimination using the TOFPET2 ASIC

Many highly pixelated organic scintillator detection systems would benefit from independent readout of each scintillator pixel. Recent advances in Silicon Photomultiplier (SiPM) technology makes this goal feasible, however the data acquisition from potentially hundreds or thousands of channels requires a low-cost and compact solution. For pixelated neutron detection with organic scintillators, the capability to distinguish between neutron and gamma interactions using Pulse Shape Discrimination (PSD) is required along with pulse charge and time of arrival. The TOFPET2 ASIC from PETsys Electronics is a 64-channel readout chip providing pulse time and charge integration measurements from SiPMs, and is specifically designed for time-of-flight positron-emission tomography. Using an 8 × 8 array of 6 mm × 6 mm J-series SiPMs from SensL/OnSemi (ArrayJ-60035-64P-PCB), we have studied the energy and PSD performance of the TOFPET2 ASIC using a 4 × 4 array of 6 mm × 6 mm × 30 mm trans -Stilbene crystals from Inrad Optics and a custom SiPM routing board from PETsys Electronics. In conclusion, using a time-over-threshold method, we measure a maximum PSD figure-of-merit of approximately 1.2 at 478 keV (the Compton edge of 662 keV) for a J-series SiPM operating at an over-voltage of 3V.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Radio frequency and DC high voltage breakdown of high pressure helium, argon, and xenon

Motivated by the possibility of guiding daughter ions from double beta decay events to single-ion sensors for barium tagging, the NEXT collaboration is developing a program of R&D to test radio frequency (RF) carpets for ion transport in high pressure xenon gas. This would require carpet functionality in regimes at higher pressures than have been previously reported, implying correspondingly larger electrode voltages than in existing systems. This mode of operation appears plausible for contemporary RF-carpet geometries due to the higher predicted breakdown strength of high pressure xenon relative to low pressure helium, the working medium in most existing RF carpet devices. In this paper we present the first measurements of the high voltage dielectric strength of xenon gas at high pressure and at the relevant RF frequencies for ion transport (in the 10 MHz range), as well as new DC and RF measurements of the dielectric strengths of high pressure argon and helium gases at small gap sizes. We find breakdown voltages that are compatible with stable RF carpet operation given the gas, pressure, voltage, materials and geometry of interest.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Selection of the silicon sensor thickness for the Phase-2 upgrade of the CMS Outer Tracker

During the operation of the CMS experiment at the High-Luminosity LHC the silicon sensors of the Phase-2 Outer Tracker will be exposed to radiation levels that could potentially deteriorate their performance. Previous studies had determined that planar float zone silicon with n-doped strips on a p-doped substrate was preferred over p-doped strips on an n-doped substrate. The last step in evaluating the optimal design for the mass production of about 200 m$^{2}$ of silicon sensors was to compare sensors of baseline thickness (about 300 μm) to thinned sensors (about 240 μm), which promised several benefits at high radiation levels because of the higher electric fields at the same bias voltage. This study provides a direct comparison of these two thicknesses in terms of sensor characteristics as well as charge collection and hit efficiency for fluences up to 1.5 × 10$^{15}$ n$_{eq}$/cm$^{2}$. The measurement results demonstrate that sensors with about 300 μm thickness will ensure excellent tracking performance even at the highest considered fluence levels expected for the Phase-2 Outer Tracker.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗