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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Superconducting properties of annealed Nb-Al-Ge thin films.

Discussion of the superconducting transition temperature and other superconducting properties of annealed Nb-Al-Ge thin films which were prepared by sputtering from a 3Nb-0.8Al-0.2Ge cathode. Annealing was performed in a high-vacuum environment maintained at 10 to the minus 9th torr or less, for times and temperatures near the optimum conditions for bulk Nb-Al-Ge. Films with transition temperatures from 12 to 16 K were annealed and in all cases a rise in transition temperature was observed, with the maximum value obtained thus far being 17.5 K. The current carrying capacity values, already substantially higher for unannealed thin films than for the bulk, were raised even further in the annealed samples, indicating that annealing has no detrimental effects on the flux pinning in these films.

Janocko, M. A.↗
NASA NTRS1978

Requirements for Kalman filtering on the GE-701 whole word computer

The results of a study to determine scaling, storage, and word length requirements for programming the Kalman filter on the GE-701 Whole Word Computer are reported. Simulation tests are presented which indicate that the Kalman filter, using a square root formulation with process noise added, utilizing MLS, radar altimeters, and airspeed as navigation aids, may be programmed for the GE-701 computer to successfully navigate and control the Boeing B737-100 during landing approach, landing rollout, and turnoff. The report contains flow charts, equations, computer storage, scaling, and word length recommendations for the Kalman filter on the GE-701 Whole Word computer.

Pines, S.↗
NASA NTRS1982

X-ray diffraction from high pressure Ge using synchrotron radiation

The high pressure structural phase transition in Ge has been studied using the energy dispersive X-ray diffraction technique and a synchrotron radiation source. Ge was observed to transform to the beta-Sn tetragonal structure in agreement with the earlier results of Jamieson, but the phase transition began at 80 + or - 5 kilobars, a somewhat lower value than generally reported. These experimental diffraction results are compared with the recent self-consistent pseudopotential calculations of Yin and Cohen (1981) and with the observed transition pressure for shock wave loaded Ge.

Baublitz, M., Jr.↗
NASA NTRS1983

Performance and materials aspects of Ge:Be photoconductors

Ge:Be photoconductors were developed for low photon background applications in the 30 to 50 MM wavelength region. These detectors provide higher responsivity and lower noise equivalent power (NEP) than the Ge:Ga detectors currently operating in this wavelength range. Beryllium doped single crystals were grown by the Czochralski method from a carbon susceptor under a vacuum of approx. one million torr. An optimum detective quantum efficiency of 46% at a background flux of 1.5 x 10 to the 8th power photons/second (7 x 10 to the 13th power W) was reported. Ge:Be detector performance is strongly influenced by the absolute concentrations and the concentration ratio of residual shallow donors and shallow acceptors.

Haegel, N. M.↗
NASA NTRS1983

Performance and materials aspects of Ge:Be photoconductors

Ge:Be photoconductors have been developed for low photon background applications in the 30 - 50 micron wavelength region. These detectors provide higher responsivity and lower noise equivalent power (NEP) than the Ge:Ga detectors currently operating in this wavelength range. Beryllium-doped single crystals were grown by the Czochralski method from a carbon susceptor under a vacuum of approximately 10 to the -6th torr. An optimum detective quantum efficiency of 46 percent at a background flux of 1.5 x 10 to the 8th photons/second (7 x 10 to the -13th W is reported. Ge:Be detector performance is strongly influenced by the absolute concentrations and the concentration ratio of residual shallow donors and shallow acceptors.

Haegel, N. M.↗
NASA NTRS1990

Intersubband absorption in Si(1-x)Ge(x/Si superlattices for long wavelength infrared detectors

Researchers calculated the absorption strengths for intersubband transitions in n-type Si(1-x)Ge(x)/Si superlattices. These transitions can be used for the detection of long-wavelength infrared radiation. A significant advantage in Si(1-x)Ge(x)/Si supperlattice detectors is the ability to detect normally incident light; in Ga(1-x)Al(x)As/GaAs superlattices, intersubband absorption is possible only if the incident light contains a polarization component in the growth direction of the superlattice. Researchers present detailed calculation of absorption coefficients, and peak absorption wavelengths for (100), (111) and (110) Si(1-x)Ge(x)/Si superlattices. Peak absorption strengths of about 2000 to 6000 cm(exp -1) were obtained for typical sheet doping concentrations (approx. equals 10(exp 12)cm(exp -2)). Absorption comparable to that in Ga(1-x)Al(x)As/GaAs superlattice detectors, compatibility with existing Si technology, and the ability to detect normally incident light make these devices promising for future applications.

Rajakarunanayake, Yasantha↗
NASA NTRS1990

Segmented Ge detectors and mechanical coolers for future gamma-ray astronomy instruments

The effectiveness of a segmented Ge detector in rejecting background events due to the beta decay of internal radioactivity is demonstrated by a laboratory experiment in which radioactivity was produced in the detector by neutron irradiation. A Cf-252 source of neutrons was used to produce, by neutron capture on Ge-74 in the detector itself, Ge-75, which decays by beta emission with a maximum energy of 1188 keV. Simultaneous spectra are taken of the activity in the detector under two conditions: a free spectrum in which all events in the detector are accumulated, and a gated spectrum in which events are accumulated only if they deposit energy in two or more segments. A comparison of the spectra shows that over 85 percent of the beta events are rejected, which is in good agreement with predictions.

Varnell, Larry S.↗
NASA NTRS1992

New class of Si-based superlattices - Alternating layers of crystalline Si and porous amorphous Si(1-x)Ge(x) alloys

Superlattices consisting of alternating layers of crystalline Si and porous amorphous Si(1-x)Ge(x) have been fabricated. This is accomplished by first growing a Si/Si(0.7)Ge(0.3) superlattice by molecular beam epitaxy, followed by Ar-ion milling to form mesa structures, and finally by immersion in HF:HNO3:H2O. This solution creates a porous structure similar to that created by anodic etching, and a high selectivity is observed for the conversion of the alloy layers relative to the Si layers. The degree of selectivity is found to depend on alloy-layer thickness and strain. Superlattices have been fabricated from 1-micron wide mesas with Si(0.7)Ge(0.3) layers fully converted to 5-nm thick porous amorphous material.

Fathauer, R. W.↗
NASA NTRS1993

Ellipsometric study of Si(0.5)Ge(0.5)/Si strained-layer superlattices

We present an ellipsometric study of two Si(0.5)Ge(0.5)/Si strained-layer superlattices grown by MBE at low temperature (500 C), and compare our results with X-ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available Si(x)Ge(1-x) databases is used. We show that ellipsometry can be used to nondestructively determine the number of superlattice periods, layer thicknesses, Si(x)Ge(1-x) composition, and oxide thickness without resorting to additional sources of information. We also note that we do not observe any strain effect on the E1 critical point.

Sieg, R. M.↗
NASA NTRS1993

Ellipsometric study of Si(0.5)Ge(0.5)/Si strained-layer superlattices

An ellipsometric study of two Si(0.5)Ge(0.5)/Si strained-layer super lattices grown by MBE at low temperature (500 C) is presented, and results are compared with x ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available Si(x)Ge(1-x) databases is used. It is shown that ellipsometry can be used to nondestructively determine the number of superlattice periods, layer thicknesses, Si(x)Ge(1-x) composition, and oxide thickness without resorting to additional sources of information. It was also noted that we do not observe any strain effect on the E(sub 1) critical point.

Sieg, R. M.↗
NASA NTRS1993

Spectroscopic ellipsometric characterization of Si/Si(1-x)Ge(x) strained-layer superlattices

Spectroscopic ellipsometry (SE) was employed to characterize Si/Si(1-x)Ge(x) strained-layer superlattices. An algorithm was developed, using the available optical constants measured at a number of fixed x values of Ge composition, to compute the dielectric function spectrum of Si(1-x)Ge(x) at an arbitrary x value in the spectral range 17 to 5.6 eV. The ellipsometrically determined superlattice thicknesses and alloy compositional fractions were in excellent agreement with results from high-resolution x ray diffraction studies. The silicon surfaces of the superlattices were subjected to a 9:1 HF cleaning prior to the SE measurements. The HF solution removed silicon oxides on the semiconductor surface, and terminated the Si surface with hydrogen-silicon bonds, which were monitored over a period of several weeks, after the HF cleaning, by SE measurements. An equivalent dielectric layer model was established to describe the hydrogen-terminated Si surface layer. The passivated Si surface remained unchanged for greater than 2 h, and very little surface oxidation took place even over 3 to 4 days.

Yao, H.↗
NASA NTRS1996

Infrared Detectors Containing Stacked Si(1-x)Ge(x)/Si Layers

Long-wavelength-infrared detectors containing multiple layers of high-quality crystalline p(+) Si(1-x)Ge(x) alternating with layers of Si undergoing development. Each detector comprises stack of Si(1-x)Ge(x)/Si heterojunction internal photoemission (HIP) photodetectors. In comparison with older HIP detectors containing single Si(1-x)Ge(x)/Si heterojunctions, developmental detectors feature greater quantum efficiencies and stronger photoresponses.

Park, Jin S.↗
DOE OSTI2020

Materials Data on Ge(TeO3)2 by Materials Project

Ge(TeO3)2 crystallizes in the monoclinic P2_1/c space group. The structure is three-dimensional. Ge4+ is bonded in an octahedral geometry to six O2- atoms. There are a spread of Ge–O bond distances ranging from 1.91–1.93 Å. Te4+ is bonded in a 3-coordinate geometry to three O2- atoms. There are a spread of Te–O bond distances ranging from 1.91–1.93 Å. There are three inequivalent O2- sites. In the first O2- site, O2- is bonded in a bent 120 degrees geometry to one Ge4+ and one Te4+ atom. In the second O2- site, O2- is bonded in a bent 120 degrees geometry to one Ge4+ and one Te4+ atom. In the third O2- site, O2- is bonded in a bent 120 degrees geometry to one Ge4+ and one Te4+ atom.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Ge(SbTe2)2 by Materials Project

Ge(SbTe2)2 crystallizes in the tetragonal I-4m2 space group. The structure is three-dimensional. Ge4+ is bonded to six Te2- atoms to form GeTe6 octahedra that share corners with two equivalent SbTe6 octahedra, corners with four equivalent GeTe6 octahedra, and edges with eight SbTe6 octahedra. The corner-sharing octahedra tilt angles range from 0–1°. There are two shorter (3.00 Å) and four longer (3.06 Å) Ge–Te bond lengths. There are two inequivalent Sb2+ sites. In the first Sb2+ site, Sb2+ is bonded to six Te2- atoms to form SbTe6 octahedra that share corners with two equivalent GeTe6 octahedra, corners with four equivalent SbTe6 octahedra, edges with four equivalent GeTe6 octahedra, and edges with four equivalent SbTe6 octahedra. The corner-sharing octahedra tilt angles range from 0–1°. There are two shorter (3.05 Å) and four longer (3.06 Å) Sb–Te bond lengths. In the second Sb2+ site, Sb2+ is bonded to six Te2- atoms to form SbTe6 octahedra that share corners with four equivalent SbTe6 octahedra, edges with four equivalent GeTe6 octahedra, and edges with four equivalent SbTe6 octahedra. The corner-sharing octahedral tilt angles are 1°. There are two shorter (3.05 Å) and four longer (3.06 Å) Sb–Te bond lengths. There are two inequivalent Te2- sites. In the first Te2- site, Te2- is bonded to two equivalent Ge4+ and three Sb2+ atoms to form a mixture of edge and corner-sharing TeGe2Sb3 square pyramids. In the second Te2- site, Te2- is bonded in a square co-planar geometry to one Ge4+ and three Sb2+ atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Ge(SeO3)2 by Materials Project

Ge(SeO3)2 crystallizes in the cubic Pa-3 space group. The structure is three-dimensional. Ge4+ is bonded in an octahedral geometry to six equivalent O2- atoms. All Ge–O bond lengths are 1.92 Å. Se4+ is bonded in a distorted T-shaped geometry to three equivalent O2- atoms. All Se–O bond lengths are 1.75 Å. O2- is bonded in a bent 120 degrees geometry to one Ge4+ and one Se4+ atom.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Ge(SeO3)2 by Materials Project

Ge(SeO3)2 crystallizes in the monoclinic P2_1/c space group. The structure is three-dimensional. Ge4+ is bonded in an octahedral geometry to six O2- atoms. There is four shorter (1.92 Å) and two longer (1.94 Å) Ge–O bond length. Se4+ is bonded in a distorted T-shaped geometry to three O2- atoms. There are a spread of Se–O bond distances ranging from 1.74–1.76 Å. There are three inequivalent O2- sites. In the first O2- site, O2- is bonded in a bent 120 degrees geometry to one Ge4+ and one Se4+ atom. In the second O2- site, O2- is bonded in a bent 120 degrees geometry to one Ge4+ and one Se4+ atom. In the third O2- site, O2- is bonded in a bent 120 degrees geometry to one Ge4+ and one Se4+ atom.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Magnetic phase diagram and multiple field-induced states in the intermetallic triangular-lattice antiferromagnet NdAuAl 4 Ge 2 with Ising-like spins

Geometrical frustration and the enhancement of strong quantum fluctuations in two-dimensional triangular antiferromagnets can lead to various intriguing phenomena. Here, in this work, we studied the spin-1/2 triangular lattice antiferromagnet NdAuAl 4 Ge 2 . Thermodynamic and transport properties, such as magnetization and specific heat together with the resistivity measurements were performed. In zero field, two successive phase transitions were observed at T N1 = 1.75 ± 0.02 and T N2 = 0.49 ± 0.02 K, respectively. Under magnetic field, XXZ-type anisotropy was revealed with the moments pointing along the easy c axis. For B∥c, multiple field-induced states were observed, and the magnetic phase diagram was established based on the specific-heat and magnetization data. The temperature-dependent resistivity measurements indicate that NdAuAl 4 Ge 2 is a good metal. It is very likely that both the long-range Ruderman-Kittel-Kasuya-Yosida interactions and the geometrical frustration play important roles in this case.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Characterizing Temporal Heterogeneity by Quantifying Nanoscale Fluctuations in Amorphous Fe‐Ge Magnetic Films

Abstract Equilibrium phase transitions are influenced by fluctuations and often discussed within the framework of the Gibbs free energy, wherein the exchange of energy between system and thermal bath is stationary and all regions of the sample exhibit the same phase. Presence of spatial heterogeneity in the magnetic structures such as pinning centers, domain walls, topological defects, etc. may cause temporal heterogeneity that modifies the nature of the magnetic phase transition. This study reports that interplay of nanoscale thermodynamics with spatio‐temporal heterogeneity gives rise to complex phase transition pathways in amorphous Fe x Ge 1‐x thin films with temperature and Fe‐concentration ( x ). Coherent resonant soft X‐ray scattering experiments that have simultaneous spatial, temporal, and spectral sensitivity show that the origin of helical to paramagnetic phase transition in amorphous Fe‐Ge thin films lies in the appearance of enhanced‐fluctuation spots deep inside the ordered state. The fluctuations are heterogeneous, starting over a small fraction of the domains that increases and becomes isotropic over the entire film as the temperature increases or the Fe‐concentration decreases. The fluctuating‐fraction, when normalized to magnetization for different Fe‐concentrations, follows a single power law behavior, suggesting that the nature of the transition can be described in terms of the underlying spatio‐temporal fluctuations.

Singh, Arnab↗