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At least 181 records · Page 10

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DOE OSTI2023

Nanoscale electrostatic control in ultraclean van der Waals heterostructures by local anodic oxidation of graphite gates

In an all-van der Waals heterostructure, the active layer, gate dielectrics and gate electrodes are assembled from two-dimensional crystals that have a low density of atomic defects. This design allows two-dimensional electron systems with very low disorder to be created, particularly in heterostructures where the active layer also has intrinsically low disorder, such as crystalline graphene layers or metal dichalcogenide heterobilayers. A key missing ingredient has been nanoscale electrostatic control, with existing methods for fabricated local gates typically introducing unwanted contamination. Here we describe a resist-free local anodic oxidation process for patterning sub-100 nm features in graphite gates, and their subsequent integration into an all-van der Waals heterostructure. We define a quantum point contact in the fractional quantum Hall regime as a benchmark device and observe signatures of chiral Luttinger liquid behaviour, indicating an absence of extrinsic scattering centres in the vicinity of the point contact. In the integer quantum Hall regime, we demonstrate in situ control of the edge confinement potential, a key requirement for the precision control of chiral edge states. In conclusion, this technique may enable the fabrication of devices capable of single anyon control and coherent edge-state interferometry in the fractional quantum Hall regime.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Tuning superconductivity of Bi 2 Sr 2 CaCu 2 O 8+x by fluoride ion intercalation with LaF 3 gate dielectric

Here, we demonstrate fluorine intercalation into Bi 2 Sr 2 CaCu 2 O 8+x (BSCCO) flakes, as thick as 100 nm, by back-gating a single crystalline LaF 3 substrate. Element-sensitive analysis not only confirms the presence of fluorine in BSCCO after gating but also reveals lateral diffusion of fluorine in BSCCO. Transport measurements further demonstrate the hole-doping effect of fluoride ions in BSCCO through effective modulation of the superconducting transitions. Our work introduces a distinct type of ions (F - ) that can be intercalated into materials via solid state back-gating. It broadens the toolbox of ion back-gating and is useful for addressing exotic phenomena in the heavily hole doped regime.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2024

Al-rich AlGaN high electron mobility transistor gate metallization study up to 600 °C in air

Here we report a comparative study of three rectifying gate metals, W, Pd, and Pt/Au, on ultrawide bandgap Al 0.86 Ga 0.14 N barrier/Al 0.7 Ga 0.3 N channel high electron mobility transistors for use in extreme temperatures. The transistors were electrically characterized from 30 to 600 °C in air. Of the three gate metals, the Pt/Au stack exhibited the smallest change in threshold voltage (0.15 V, or 9% change between the 30 and 600 °C values, and a maximum change of 42%), the highest on/off current ratio (1.5 × 10 6 ) at 600 °C, and a modest forward gate leakage current (0.39 mA/mm for a 3,V gate bias) at 600 °C. These favorable results showcase AlGaN channel high electron mobility transistors' ability to operate in extreme temperature environments.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Quantitative modeling of gate-tunable cavity exciton-polaritons in transition-metal dichalcogenides

We performed a comprehensive real-space simulation study of propagative exciton-polaritons (EPs) of tungsten disulfide (WS 2 ) inside a Fabry–Pérot cavity. Through our simulations, we were able to construct the dispersion relation and determine the propagation length (L p ) of EPs, both of which show sensitive dependence on the applied gate voltage. We found that L p increases at higher gate voltages when excited at the exciton energy but shows opposite gate dependence at the trion energy. These observations are direct evidence of the coupling between the cavity mode with excitons and trions of WS 2 . Furthermore, we demonstrate a proof-of-concept device based on the tunable cavity EPs of WS 2 , which is promising for application as photonic transistors, modulators, or electrical-to-optical converters. Furthermore, our work unveils the real-space transport properties of gate-tunable cavity EPs and paves the way for future applications of EPs in nanophotonic devices and circuits.

42 ENGINEERING↗

DOE OSTI2025

In situ synchrotron x-ray studies of epitaxial SrCoO x films during ionic liquid gating

The manipulation of ions in complex oxide materials can be used to mimic brain-like plasticity through changes to the resistivity of a neuromorphic device. Advances in the design of more energy efficient devices require improved understanding of how ions migrate within a material and across its interface. We investigate the exchange of oxygen and hydrogen in a model SrCoO x epitaxial film—a material that transitions between a ferromagnetic metal and antiferromagnetic insulator depending on the oxygen concentration. Changes to the film during ionic liquid gating were measured by in situ synchrotron x-ray techniques as a function of time and gate voltage, examining the reversibility of the oxide over one complete gating cycle. We find that the out-of-plane lattice constant and oxygen vacancy concentration of SrCoO x are largely reversible although changes were observed in the ordered vacancy structure. Our results provide much needed insight into electrolyte-gated phase behavior in the transition metal oxides.

Li, Yan [Argonne National Laboratory (ANL), Argonn↗

DOE OSTI2020

Logical gates embedding in artificial spin ice

The realization and study of arrays of interacting magnetic nanoislands, such as artificial spin ices, have reached mature levels of control that allow design and demonstration of exotic, collective behaviors not seen in natural materials. Advances in the direct manipulation of their local, binary moments also suggest a use as nanopatterned, interacting memory media, for computation within a magnetic memory. Recent experimental work has demonstrated the possibility of building logic gates from clusters of interacting magnetic domains, and yet the possibility of large scale integration of such gates can prove problematic even at the theoretical level. Here we introduce theoretically complete sets of logical gates, in principle realizable in an experiment, and we study the feasibility of their integration into tree-like circuits. By evaluating the fidelity control parameter between their collective behavior and their expected logic functionality we determine conditions for integration. Also, we test our numerical results against the presence of disorder in the couplings, showing that the design gate structure is robust to small coupling perturbations, and thus possibly to small imperfections in the fabrication of the islands.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2021

Generation of isolated soft x-ray attosecond pulses with mid-infrared driving lasers via transient phase-matching gating

Abstract Isolated attosecond pulses (IAPs) in the soft x-ray (SXR) region are highly desirable for attosecond time-resolved experiments. Here we identify a transient phase matching gating method for the generation of such IAPs with mid-infrared (MIR) lasers. This gating method works when a loosely focused, long-duration MIR Gaussian driving beam is slightly reshaped during its propagation in the gas medium under the ‘critical’ ionization condition. Quantitatively, the calculated coherence length of high harmonic is used to analyze the mechanism of the gating method, by using one-dimensional plane-wave beams and by comparing 2000 nm and 800 nm lasers. The robustness of the generation method is checked by varying laser’s carrier-envelope-phase and gas pressure. This gating method provides with an alternative route to efficiently produce tabletop ultrashort attosecond SXR light sources with the emerging MIR lasers.

Physics↗

DOE OSTI2021

Optimal calibration of gates in trapped-ion quantum computers

Abstract To harness the power of quantum computing, it is essential that a quantum computer provide maximal possible fidelity for a quantum circuit. To this end, much work has been done in the context of qubit routing or embedding, i.e., mapping circuit qubits to physical qubits based on gate performance metrics to optimize the fidelity of execution. Here, we take an alternative approach that leverages a unique capability of a trapped-ion quantum computer, i.e., the all-to-all qubit connectivity. We develop a method to determine a fixed number (budget) of quantum gates that, when calibrated, will maximize the fidelity of a batch of input quantum programs. This dynamic allocation of calibration resources on randomly accessible gates, determined using our heuristics, increases, for a wide range of calibration budget, the average fidelity from 70% or lower to 90% or higher for a typical batch of jobs on an 11-qubit device, in which the fidelity of calibrated and uncalibrated gates are taken to be 99% and 90%, respectively. Our heuristics are scalable, more than 2.5 orders of magnitude faster than a randomized method for synthetic benchmark circuits generated based on real-world use cases.

Maksymov, Andrii (ORCID:0000000282442851)↗

DOE OSTI2025

Synthesis of single-qutrit circuits from Clifford+𝑅 gates

Here, we present two deterministic compilation algorithms for single-qutrit unitaries with O ( log 1 / ɛ ) gate depth. Each algorithm selects a nearby approximation to the target unitary and then exactly synthesizes the approximation over the Clifford + R basis. The first algorithm exhaustively searches over the group; while the second algorithm searches only for Householder reflections. The exhaustive search algorithm yields an average R count of 2.193 ( 11 ) + 8.621 ( 7 ) log 10 ( 1 / ɛ ) , albeit with a time complexity of O ( ɛ − 4.4 ) . The Householder search algorithm results in a larger average R count of 3.20 ( 13 ) + 10.77 ( 3 ) log 10 ( 1 / ɛ ) at a reduced time complexity of O ( ɛ − 0.42 ) , greatly extending the reach in ɛ . These costs correspond asymptotically to 35% and 69% more non-Clifford gates compared with synthesizing the same unitary with two qubits. Such initial results are encouraging for using the R gate as the nontransversal gate for qutrit-based computation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2026

Clifford Hierarchy Stabilizer Codes: Transversal Non-Clifford Gates and Magic States

A fundamental problem in fault-tolerant quantum computation is the tradeoff between universality and dimensionality, exemplified by the the Bravyi-König bound for $n$-dimensional topological stabilizer codes. In this work, we extend topological Pauli stabilizer codes to a broad class of $n$-dimensional Clifford hierarchy stabilizer codes. These codes correspond to the $(n+1)$D Dijkgraaf-Witten gauge theories with non-Abelian topological order. We construct transversal non-Clifford gates through automorphism symmetries represented by cup products. In 2D, we obtain the first transversal non-Clifford logical gates including T and CS for Clifford stabilizer codes, using the automorphism of the twisted $\mathbb{Z}_2^3$ gauge theory (equivalent to $\mathbb{D}_4$ topological order). We also combine it with the just-in-time decoder to fault-tolerantly prepare the logical T magic state in $O(d)$ rounds via code switching. In 3D, we construct a transversal logical $\sqrt{\text{T}}$ gate in a non-Clifford stabilizer code at the third level of the Clifford hierarchy, located on a tetrahedron corresponding to a twisted $\mathbb{Z}_2^4$ gauge theory. Furthermore, our constructions surpass the Bravyi-König bound by achieving the logical gates in the $(n+1)$-th level of Clifford hierarchy in $n$ spatial dimension.

Kobayashi, Ryohei [Institute for Advanced Study, P↗

DOE OSTI2024

Primitive quantum gates for an S U ( 3 ) discrete subgroup: Σ ( 36 × 3 )

We construct the primitive gate set for the digital quantum simulation of the 108-element Σ ( 36 × 3 ) group. This is the first time a non-Abelian crystal-like subgroup of S U ( 3 ) has been constructed for quantum simulation. The gauge link registers and necessary primitives—the inversion gate, the group multiplication gate, the trace gate, and the Σ ( 36 × 3 ) Fourier transform—are presented for both an eight-qubit encoding and a heterogeneous three-qutrit plus two-qubit register. For the latter, a specialized compiler was developed for decomposing arbitrary unitaries onto this architecture. Published by the American Physical Society 2024

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2022

SWAP Gate between a Majorana Qubit and a Parity-Protected Superconducting Qubit

High fidelity quantum information processing requires a combination of fast gates and long-lived quantum memories. Here, in this Letter, we propose a hybrid architecture, where a parity-protected superconducting qubit is directly coupled to a Majorana qubit, which plays the role of a quantum memory. The superconducting qubit is based upon a π-periodic Josephson junction realized with gate-tunable semiconducting wires, where the tunneling of individual Cooper pairs is suppressed. One of the wires additionally contains four Majorana zero modes that define a qubit. We demonstrate that this enables the implementation of a SWAP gate, allowing for the transduction of quantum information between the topological and conventional qubit. This architecture combines fast gates, which can be realized with the superconducting qubit, with a topologically protected Majorana memory.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2024

Learning Quantum States and Unitaries of Bounded Gate Complexity

While quantum state tomography is notoriously hard, most states hold little interest to practically minded tomographers. Given that states and unitaries appearing in nature are of bounded gate complexity, it is natural to ask if efficient learning becomes possible. In this work, we prove that to learn a state generated by a quantum circuit with G two-qubit gates to a small trace distance, a sample complexity scaling linearly in G is necessary and sufficient. We also prove that the optimal query complexity to learn a unitary generated by G gates to a small average-case error scales linearly in G . While sample-efficient learning can be achieved, we show that under reasonable cryptographic conjectures, the computational complexity for learning states and unitaries of gate complexity G must scale exponentially in G . We illustrate how these results establish fundamental limitations on the expressivity of quantum machine-learning models and provide new perspectives on no-free-lunch theorems in unitary learning. Together, our results answer how the complexity of learning quantum states and unitaries relate to the complexity of creating these states and unitaries. Published by the American Physical Society 2024

Zhao, Haimeng (ORCID:0000000166751489)↗

DOE OSTI2021

Efficient Quantum Gate Discovery with Optimal Control

Optimal control theory provides a framework for numerical discovery of device controls that implement quantum logic gates, but common objective functions used for optimization often assign arbitrarily high costs to otherwise useful controls. We propose a framework for designing objective functions that permit novel gate designs such as echo pulses or locally-equivalent gates. We use numerical simulations to demonstrate the efficacy of the new objective functions by designing microwave-only pulses that act as entangling gates for superconducting transmon architectures. We observe that the proposed objective functions lead to higher fidelity controls in fewer optimization iterations than obtainable by traditional objective functions.

Kairys, Paul↗

DOE OSTI2020

Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs

An essential ruggedness of power devices is the capability of safely withstanding the surge energy. The surge ruggedness of the GaN high-electron-mobility transistor (HEMT), a power transistor with no or minimal avalanche capability, has not been fully understood. This article unveils the comprehensive physics associated with the surge-energy withstand process and the failure mechanisms of p-gate GaN HEMTs. Two commercial p-gate GaN HEMTs with Ohmic- and Schottky-type gate contacts are studied. Two circuits are developed to study the device surge ruggedness: an unclamped inductive switching circuit is first used to identify the withstand dynamics and failure mechanisms, and a clamped inductive switching circuit with a controllable parasitic inductance is then designed to mimic the surge energy in converter-like switching events. The p-gate GaN HEMT is found to withstand the surge energy through a resonant energy transfer between the device capacitance and the load/parasitic inductance rather than a resistive energy dissipation as occurred in the avalanche. If the device resonant voltage goes below zero, the device reversely turns on and the inductor is discharged. The device failure occurs at the transient of peak resonant voltage and is limited by the device overvoltage capability rather than the surge energy, dV/dt , or overvoltage duration. Almost no energy is dissipated in the resonant withstand process and the device failure is dominated by an electric field rather than a thermal runaway. Furthermore, these results provide critical understandings on the ruggedness of GaN HEMTs and important references for their qualifications and applications.

42 ENGINEERING↗

DOE OSTI2025

Realization and Calibration of Continuously Parameterized Two-Qubit Gates on a Trapped-Ion Quantum Processor

Continuously parameterized two-qubit gates are a key feature of state-of-the-art trapped-ion quantum processors, as they have favorable error scalings and show distinct improvements in circuit performance over more restricted maximally entangling gatesets. In this work, we provide a comprehensive and pedagogical discussion on how to practically implement these continuously parameterized Mølmer–Sørensen gates on the Quantum Scientific Computing Open User Testbed, a low-level trapped-ion processor. To generate the arbitrary entangling angles, θ, we simply scale the amplitude of light used to generate the entanglement. However, doing so requires careful consideration of amplifier saturation as well as the variable light shifts that result. As such, we describe a method to calibrate and cancel the dominant fourth-order effects, followed by a dynamic virtual phase advance during the gate to cancel any residual light shifts, and find a linear scaling between θ and the residual light shift. Once we have considered and calibrated these effects, we demonstrate performance improvement with decreasing θ. Finally, we describe nuances of hardware control to transform the XX-type interaction of the arbitrary-angle Mølmer–Sørensen gate into a phase-agnostic and crosstalk-mitigating ZZ interaction.

Yale, Christopher Gordon [Sandia National Laborato↗

DOE OSTI2021

Orchestrated trios: compiling for efficient communication in Quantum programs with 3-Qubit gates

Current quantum computers are especially error prone and require high levels of optimization to reduce operation counts and maximize the probability the compiled program will succeed. These computers only support operations decomposed into one- and two-qubit gates and only two-qubit gates between physically connected pairs of qubits. Typical compilers first decompose operations, then route data to connected qubits. We propose a new compiler structure, Orchestrated Trios, that first decomposes to the three-qubit Toffoli, routes the inputs of the higher-level Toffoli operations to groups of nearby qubits, then finishes decomposition to hardware-supported gates. This significantly reduces communication overhead by giving the routing pass access to the higher-level structure of the circuit instead of discarding it. A second benefit is the ability to now select an architecture-tuned Toffoli decomposition such as the 8-CNOT Toffoli for the specific hardware qubits now known after the routing pass. Furthermore, we perform real experiments on IBM Johannesburg showing an average 35% decrease in two-qubit gate count and 23% increase in success rate of a single Toffoli over Qiskit. We additionally compile many near-term benchmark algorithms showing an average 344% increase in (or 4.44x) simulated success rate on the Johannesburg architecture and compare with other architecture types.

compiler↗

DOE OSTI2021

IBM Open Science Price - SWAP Gate Challenge

On November 30, 2020, IBM announced an open science price competition aimed at improving the fidelity of a SWAP gate on their 7 qubit Quantum system named ”Casablanca”. The details of the SWAP gate problem was outlined in a Jupyter notebook, which utilizes the IBM developed open source package Qiskit. The participants were allowed to work in teams with up to five people and restricted to only use open source software in solving the problem. Their results were due on April 16, 2021. Our approach to solving the SWAP gate challenge is based on the quantum optimal control techniques implemented in our open source packages Juqbox.jl and Quandary. The results from the optimal control approach is only as good as the accuracy in the description of the quantum system dynamics, characterized by a Hamiltonian model that was provided by IBM. Based on the calibrated control pulses IBM provide for the standard gate set, we developed a reverse engineering approach to calibrate our computational model. Techniques were developed to translate between Qiskit’s pulse representation and the B-spline formulation used in Juqbox and Quandary. The fidelity of the optimized pulse sequences were estimated using Qiskit’s randomized bench marking techniques.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗