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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

The Critical Role of AlInP Window Design in III–V Rear-Emitter Solar Cells

This article highlights the critical role of window design on short circuit carrier collection in rear-emitter solar cells, as demonstrated through modeling and experiment using metamorphic GaAs y P 1-y . Ultimately, if the window design is not carefully considered, surface depletion caused by Fermi level pinning at the window/air interface can extend into regions of active collection resulting in a large increase in effective window/base interface recombination velocity. This was experimentally shown here to result in a potential AM1.5G photocurrent loss of 8.1 mA/cm 2 , or nearly 50%, based on integrated internal quantum efficiency (IQE). Associated IQE modeling and curve fitting indicate that the effective IRV at the GaAs 0.75 P 0.25 /Al 0.64 In 0.36 P interface is increased by multiple orders of magnitude when the window is not sufficiently thick or doped to fully contain the surface depletion to within the window layer. Calculations of the surface depletion depth as a function of doping and the surface Fermi pinning energy level provides insight into the fundamental limits of window thickness. As a result, this allows the estimation of the Al 0.64 In 0.36 P surface pinning level to be at least 1.25 eV below the conduction band edge, or in the bottom half of the bandgap.

14 SOLAR ENERGY↗
DOE OSTI2025

Theory of Two-Level Tunneling Systems in Superconductors

We develop a field theory formulation for the interaction of an ensemble of two-level tunneling systems (TLSs) with the electronic states of a superconductor. Predictions for the impact of two-level tunneling systems on superconductivity are presented, including T c and the spectrum of quasiparticle states for conventional BCS superconductors. We show that nonmagnetic TLS impurities in conventional s-wave superconductors can act as pair-breaking or pair-enhancing defects depending on the level population of the distribution of TLS impurities. We present calculations of the enhancement of superconductivity, both T c and the order parameter, for TLS defects in thermal equilibrium with the electrons and lattice. The scattering of quasiparticles by TLS impurities leads to subgap states below the bulk excitation gap, Δ, as well as resonances in the continuum above Δ. The energies and spectral weights of these states depend on the distribution of tunnel splittings, while the spectral weights are particularly sensitive to the level occupation of the TLS impurities. Under microwave excitation, or decoupling from the thermal bath, a nonequilibrium level population of the TLS distribution generates subgap quasiparticle states near the Fermi level that contribute to dissipation and thus degrade the performance of superconducting devices at low temperatures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Modulation of the coordination environment enhances the electrocatalytic efficiency of Mo single atoms toward water splitting

Here, enhancing the catalytic efficiency through engineering active site environments is expected to work pronouncedly for single atom catalysts (SACs) because of intense atomic scale interactions involved between SAs and their coordination environments. Taking Mo SACs for catalyzation of the hydrogen evolution reaction (HER) as an example, three SACs of different coordination environments, namely Mo-O 2 N 2 , Mo-O 2 N 1 C 1 , and Mo-O 2 C 2 , were successfully created for demonstration. The HER performances are in an increasing order of Mo-O 2 N 2 , Mo-O 2 N 1 C 1 , and Mo-O 2 C 2 , exhibiting η 10 of 98, 71, and 61 mV, η 500 of 340, 248, and 200 mV, Tafel slopes of 95.8, 39.6, and 33.8 mV dec -1 , and current density decays of 9, 6, and 6% after a 50 hour operation at an initial current density of 100 mA cm -2 , respectively. Substituting C with N in the coordination environment results in inferior HER catalytic efficiency and stability. Density functional theory calculations reveal that replacing carbon with nitrogen for coordination with the Mo SA on a carbon substrate of a higher N-doping level shifts the d-band center of Mo more negatively from the Fermi level, thereby increasing the hydrogen adsorption energy and thus decelerating the hydrogen desorption kinetics, giving consequent inferior HER activities.

25 ENERGY STORAGE↗
DOE OSTI2023

Observation of gapless nodal-line states in NdSbTe

Lanthanide (Ln)-based systems in ZrSiS-type nodal-line semimetals have been subjects of research investigations as grounds for studying the interplay of topology with possible magnetic ordering and electronic correlations that may originate from the presence of Ln4f electrons. In this study, we carried out a thorough study of a LnSbTe system, NdSbTe, by using angle-resolved photoemission spectroscopy along with first-principles calculations and thermodynamic measurements. We experimentally detect the presence of multiple gapless nodal-line states, which is well supported by first-principles calculations. A dispersive and an almost nondispersive nodal line exist along the bulk X–R direction. Another nodal line is present well below the Fermi level across the Γ–M direction, which is formed by bands with high Fermi velocity that seem to be sensitive to light polarization. Finally, our study provides insight into the electronic structure of an alternative Ln⁢SbTe material system that will aid towards understanding the connection of Ln elements with topological electronic structures in these systems.

36 MATERIALS SCIENCE↗
DOE OSTI2026

A perspective on the electronic instabilities in kagome AV 3 Sb 5

The electronic properties of solids are strongly shaped by lattice geometry. A prime example is the kagome lattice, whose band structure features van Hove singularities (vHS), flat bands, and Dirac crossings. These characteristics naturally promote strong electronic correlations. In the kagome metals AV 3 Sb 5 , the Fermi level lies close to kagome-derived vHS, placing the system in a regime of heightened electronic susceptibility and correlation-driven instabilities. In this Perspective, we discuss the electronic instabilities observed experimentally in AV 3 Sb 5 , outline the physical pictures that we find most compelling, and share our views on the current excitement, open debates, and future opportunities in these materials. We view AV 3 Sb 5 as a uniquely clean platform for exploring how multiple correlated phases coexist, compete, and intertwine on a single Fermi surface, offering a level of conceptual richness comparable to that of the cuprates. Although a lot of information about AV 3 Sb 5 has been collected in recent years, we still lack a clear understanding of each of its electronic phases or their interplay. Furthermore this Perspective aims to expose the status of the field and cajole a communal effort toward a unified physical description of these compounds.

Yeh, Eric C. H. [University of California, Los Ang↗
DOE OSTI2022

Low-temperature thermal properties of Fe-doped Co 3 Sn 2 S 2

Recent studies on Co 3 Sn 2 S 2 usually focus on its electrical and magnetic behaviors as it is a Weyl semimetal, half metal, and anisotropic ferromagnet at the same time. Only a few works looked into its low-temperature thermal characteristics. Here, in this study, we report the low-temperature heat capacity, Seebeck coefficient, and thermal conductivity of Fe-doped Co 3 Sn 2 S 2 , as well as the formation energies, band structures, and spin-polarized density of states calculated by using the spin-polarized relativistic Korringa-Kohn-Rostoker – Green’s function method (sprKKR). The heat capacity data reveal that the sample with a heavier Fe-doping level has a lower Debye temperature and a larger density of states at the Fermi level, the latter confirmed by our ab initio computational results. The Fe-doping increases the absolute value of the Seebeck coefficient at temperatures above 120 K and dramatically suppresses the thermal conductivity. Furthermore, we discuss how the external applied magnetic field affects the Seebeck coefficient and thermal conductivity of pristine Co 3 Sn 2 S 2 . Our findings provide a detailed reference and may stimulate future investigations into the low-temperature thermal transport properties of Co 3 Sn 2 S 2 and other compounds in the shandite family.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Correlating Electronic Structure and Device Physics with Mixing Region Morphology in High-Efficiency Organic Solar Cells

The donor/acceptor interaction in non-fullerene organic photovoltaics leads to the mixing domain that dictates the morphology and electronic structure of the blended thin film. Initiative effort is paid to understand how these domain properties affect the device performances on high-efficiency PM6:Y6 blends. Different fullerenes acceptors are used to manipulate the feature of mixing domain. It is seen that a tight packing in the mixing region is critical, which could effectively enhance the hole transfer and lead to the enlarged and narrow electron density of state (DOS). As a result, short-circuit current (J SC ) and fill factor (FF) are improved. The distribution of DOS and energy levels strongly influences open-circuit voltage (V OC ). The raised filling state of electron Fermi level is seen to be key in determining device V OC . Energy disorder is found to be a key factor to energy loss, which is highly correlated with the intermolecular distance in the mixing region. A 17.53% efficiency is obtained for optimized ternary devices, which is the highest value for similar systems. The current results indicate that a delicate optimization of the mixing domain property is an effective route to improve the V OC , J SC , and FF simultaneously, which provides new guidelines for morphology control toward high-performance organic solar cells.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Plethora of tunable Weyl fermions in kagome magnet Fe 3 Sn 2 thin films

Interplay of magnetism and electronic band topology in unconventional magnets enables the creation and fine control of novel electronic phenomena. In this work, we use scanning tunneling microscopy and spectroscopy to study thin films of a prototypical kagome magnet Fe 3 Sn 2 . Our experiments reveal an unusually large number of densely-spaced spectroscopic features straddling the Fermi level. These are consistent with signatures of low-energy Weyl fermions and associated topological Fermi arc surface states predicted by theory. By measuring their response as a function of magnetic field, we discover a pronounced evolution in energy tied to the magnetization direction. Electron scattering and interference imaging further demonstrates the tunable nature of a subset of related electronic states. Our experiments provide a direct visualization of how in-situ spin reorientation drives changes in the electronic density of states of the Weyl fermion band structure. Combined with previous reports of massive Dirac fermions, flat bands, and electronic nematicity, our work establishes Fe 3 Sn 2 as an interesting platform that harbors an extraordinarily wide array of topological and correlated electron phenomena.

36 MATERIALS SCIENCE↗
NASA NTRS1983

Double-injection, deep-impurity switch development

The overall objective of this program is the development of device design and process techniques for the fabrication of a double-injection, deep-impurity (DI)(2) silicon switch that operates in the 1-10 kV range with conduction current of 10 and 1A, respectively. Other major specifications include a holding voltage of 0 to 5 volts at 1 A anode current, 10 microsecond switching time, and power dissipation of 50 W at 75 C. This report describes work that shows how the results obtained at the University of Cincinnati under NASA Grant NSG-3022 have been applied to larger area and higher voltage devices. The investigations include theoretical, analytical, and experimental studies of device design and processing. Methods to introduce deep levels, such as Au diffusion and electron irradiation, have been carried out to "pin down' the Fermi level and control device-switching characteristics. Different anode, cathode, and gate configurations are presented. Techniques to control the surface electric field of planar structures used for (DI)(2) switches are examined. Various sections of this report describe the device design, wafer-processing techniques, and various measurements which include ac and dc characteristics, 4-point probe, and spreading resistance.

Selim, F. A.↗
DOE OSTI2021

Helical magnetic order and Fermi surface nesting in noncentrosymmetric ScFeGe

Here, an investigation of the structural, magnetic, thermodynamic, and charge transport properties of noncentrosymmetric hexagonal ScFeGe reveals it to be an anisotropic metal with a transition to a weak itinerant incommensurate helimagnetic state below T N =36 K. Neutron diffraction measurements discovered a temperature and field independent helical wave vector k = (0 0 0.193) with magnetic moments of 0.53 μ B per Fe confined to the ab-plane. Density functional theory calculations are consistent with these measurements and find several bands that cross the Fermi level along the c-axis with a nearly degenerate set of flat bands just above the Fermi energy. The anisotropy found in the electrical transport is reflected in the calculated Fermi surface, which consists of several warped flat sheets along the c-axis with two regions of significant nesting, one of which has a wave vector that closely matches that found in the neutron diffraction. The electronic structure calculations, along with a strong anomaly in the c-axis conductivity at TN, signal a Fermi surface driven magnetic transition, similar to that found in spin density wave materials. Magnetic fields applied in the ab-plane result in a metamagnetic transition with a threshold field of ≈ 6.7 T along with a sharp, strongly temperature dependent discontinuity and a change in sign of the magnetoresistance for in-plane currents. Thus, ScFeGe is an ideal system to investigate the effect of in-plane magnetic fields on a helimagnet with a c-axis propagation vector, where the relative strength of the magnetic interactions and anisotropies determine the topology and magnetic structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Quasi-Fermi liquid behavior in a one-dimensional system of interacting spinless fermions

We present numerical evidence for a paradigm in one-dimensional interacting fermion systems, whose phenomenology has traits of both Luttinger liquids and Fermi liquids. This state, dubbed a quasi-Fermi liquid, possesses a discontinuity in its fermion occupation number at the Fermi momentum. The excitation spectrum presents particlelike quasiparticles and absence of holelike quasiparticles, giving rise instead to edge singularities. Such a state is realized in a one-dimensional spinless fermion lattice Hamiltonian by fine-tuning the interactions to a regime where they become irrelevant in the renormalization group sense. We show, using uniform infinite matrix products states and finite-entanglement scaling analysis, that the system ground state is characterized by a Luttinger parameter K = 1 and a discontinuous jump in the fermion occupation number. We support the characterization with calculations of the spectral function that show a particle-hole asymmetry reflected in the existence of well-defined Landau quasiparticles above the Fermi level and edge singularities without the associated quasiparticles below. Furthermore, these results indicate that the quasi-Fermi liquid paradigm can be realized beyond the low-energy perturbative realm.

1-dimensional systems↗
DOE OSTI2020

Prediction of superconductivity and topological aspects in single-layer β -Bi 2 Pd

Topological superconductors, characterized by topologically nontrivial states residing in a superconducting gap, are a recently discovered class of materials having Majorana fermions. The interplay of superconductivity and topological states gives rise to opportunities for achieving such topological superconductors in condensed matter systems. Up to now, several single-material topological superconductors in this form have been theoretically predicted and experimentally confirmed. Here, using the first-principles calculations, we study the superconducting single-layer β-Bi 2 Pd. In this work, the electronic density of states near Fermi level of this monolayer are dominated by the Bi-p and Pd-d orbitals, forming a two-band Fermi surface with multiclass sheets. The presence of soft phonon bands, in cooperation with the electron susceptibility, accounts for electron-phonon superconductivity of single-layer β-Bi 2 Pd. With the centrosymmetric structure, single-layer β-Bi 2 Pd possesses a continuous gap over the whole Brillouin zone and topological Dirac-like states at its one-dimensional boundary. The present findings would lead to the expectation of one-dimensional topological superconductivity and Majorana bound states in a monolayer candidate of β-Bi 2 Pd with intrinsic full-gap superconductivity.

36 MATERIALS SCIENCE↗
NASA NTRS1991

Silicon device performance measurements to support temperature range enhancement

Semiconductor power devices are typically rated for operation below 150 C. Little data is known for power semiconductors over 150 C. In most cases, the device is derated to zero operating power at 175 C. At the high temperature end of the temperature range, the intrinsic carrier concentration increases to equal the doping concentration level and the silicon behaves as an intrinsic semiconductor. The increase in intrinsic carrier concentration results in a shift of the Fermi level toward mid-bandgap at elevated temperatures. This produces a shift in devices characteristics as a function of temperature. By increasing the doping concentration higher operating temperatures can be achieved. This technique was used to fabricate low power analog and digital devices in silicon with junction operating temperatures in excess of 300 C. Additional temperature effects include increased p-n junction leakage with increasing temperature, resulting in increased resistivity. The temperature dependency of physical properties results in variations in device characteristics. These must be quantified and understood in order to develop extended temperature range operation.

Bromstead, James↗
DOE OSTI2020

Forecasting the Decay of Hybrid Perovskite Performance Using Optical Transmittance or Reflected Dark-Field Imaging

The practicality and economic viability of hybrid perovskite solar cells hinge on their operational lifetime, and methods for forecasting the performance of perovskites under different operational stresses are urgently needed. Here, we explore the evolution of material-level optoelectronic properties as MAPbI 3 degrades and discover universal behaviors where the carrier diffusion length (L D ) decays before quasi-Fermi-level splitting (ΔE F ), regardless of the specific stress protocol (oxygen, humidity, thermal stress, or a combination). We employ a machine learning greedy feature selection model that uses initially measured properties to predict the time it takes L D to decrease to 85% of its initial value with a prediction accuracy of 12.8%. This model reveals a strong correlation between the initial rate of transmittance change and the time until loss of transport. We translate this material-level finding to photovoltaic device-level forecasting by demonstrating that the rate of change of transmittance is equivalent to the rate of change of the spatial standard deviation of dark-field image intensity (i.e., scattered light intensity) collected in reflection mode (and thus applicable to devices with opaque contacts). Furthermore, this work demonstrates that transmittance and scattering methods are highly effective for accelerated material (and device) stability evaluation and forecasting.

14 SOLAR ENERGY↗
DOE OSTI2022

Strongly correlated itinerant magnetism near superconductivity in NiTa 4 Se 8

Metallic ferromagnets with strongly interacting electrons often exhibit remarkable electronic phases such as ferromagnetic superconductivity, complex spin textures, and nontrivial topology. Here, in this report, we discuss the synthesis of a layered magnetic metal NiTa 4 Se 8 (or Ni 1/4 TaSe 2 ) with a Curie temperature of 58 Kelvin. Magnetization data and density functional theory calculations indicate that the nickel atoms host uniaxial ferromagnetic order of about 0.7µ B per atom, while an even smaller moment is generated in the itinerant tantalum conduction electrons. Strong correlations are evident in flat bands near the Fermi level, a high heat capacity coefficient, and a high Kadowaki-Woods ratio. Density functional theory calculations suggest that electron and hole Fermi surfaces in the ferromagnetic phase are associated with opposite spin polarization. When the system is diluted of magnetic ions, the samples become superconducting below about 2 Kelvin. We discuss possible mechanisms for superconductivity in this family.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2022

Anomalous Hall effect at the Lifshitz transition in ZrTe 5

Zirconium pentatelluride ZrTe 5 is a topological semimetal. The presence of a temperature-induced Lifshitz transition, in which the Fermi level goes from the conduction band to the valence band with increasing temperature, provides unique opportunities to study the interplay between Fermi-surface topology, dynamics of Dirac fermions, and Berry curvature in one system. Here we present a combined experimental and theoretical study and show that a low-energy model can be used to understand the complicated Hall response and large anomalous Hall effect observed in ZrTe 5 over a wide range of temperature and magnetic field. We found that the anomalous Hall contribution dominates the Hall response in a narrow temperature window around the Lifshitz transition, away from which the orbital contribution dominates. Moreover, our results indicate that a topological phase transition coexists with the Lifshitz transition. To conclude, our model provides a unifying framework to understand the Hall effect in semimetals with large Zeeman splitting and nontrivial topology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Energy gap of topological surface states in proximity to a magnetic insulator

Abstract Topological surface-states can acquire an energy gap when time-reversal symmetry is broken by interfacing with a magnetic insulator. This gap has yet to be measured. Such topological-magnetic insulator heterostructures can host a quantized anomalous Hall effect and can allow the control of the magnetic state of the insulator in a spintronic device. In this work, we observe the energy gap of topological surface-states in proximity to a magnetic insulator using magnetooptical Landau level spectroscopy. We measure Pb 1-x Sn x Se–EuSe heterostructures grown by molecular beam epitaxy exhibiting a record mobility and low Fermi energy. Through temperature dependent measurements and theoretical calculations, we show this gap is likely due to quantum confinement and conclude that the magnetic proximity effect is weak in this system. This weakness is disadvantageous for the realization of the quantum anomalous Hall effect, but favorable for spintronic devices which require the preservation of spin-momentum locking at the Fermi level.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗