Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Electrical resistivity”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRSDate not supplied

LIRA: Probing the Lunar Surface for Resources.

The thermal, compositional and electrical properties of the lunar regolith, such as the triboelectric properties of lunar dust, the volatile content and the thermophysical properties of the polar regolith are essential to understand from a scientific perspective as well as for resource extraction and hazard mitigation. Understanding these properties specifically requires in situ measurement, as these properties are inherent in the ambient environment. With the Lunar In situ Regolith Analyzer (LIRA) we will combine mature surface sensor technologies from previous spacecraft missions (TECP) with new sensors (ClO4- ) and battery capability to achieve a compact in situ analysis package. The surface instrument suite is adapted for lunar conditions from a sensor developed as part of the Microscopy, Electrochemistry, and Conductivity Analyzer (MECA) instrument on the 2007 Mars Phoenix mission, as well as supplemental sensors. • The Thermal and Electrical Conductivity Probe (TECP), flown on MECA/Phoenix, which measures heat capacity, thermal conductivity, electrical resistance, and electrical permittivity between needles inserted into the soil. The TECP also measured atmospheric humidity, a capability that will be retained to search for subsurface H2O ice. The Mars TECP weighed 100-gram and by definition was at TRL 9. The lunar version (LIRA) is TRL 4. • The Perchlorate (ClO4) sensor is based on the fluorescence property of perchlorate (Mg, Fe, Na). We added a light source to excite the perchlorate (ClO4) and a photo diode to collect the emission wavelength. A sun-shade over the photo diode blocks out the ambient light during day light hours. The unifying goal of LIRA is to deliver a complete, integrated experiment suite that investigates properties that must be measured in situ, and provides the capability to power the suite at night or in PSRs, as well as a means to simulate aspects of the diurnal transition by delivering an optical pulse to the surface with intensity comparable to sunlight. We describe the scientific context of LIRA, touching on the electrical state of the near-surface environment, the thermal properties of the undisturbed regolith, and the distribution, geochemistry, and mobility of water. We also address the exploration implications of the work, examining hazards and resources in the context of strategic knowledge gaps (SKGs).

Heather Smith↗
DOE OSTI2020

STRUCTURE AND PROPERTIES STUDY ON ENERGY MATERIALS: THERMOELECTRIC MATERIAL TETRAHEDRITE AND LITHIUM ION CONDUCTOR

Development of efficient energy materials is critical in order to ease the energy demand and reduce our dependence of fossil fuel. Thermoelectric materials are promising due to their capability of generating electrical power by recovering waste heat. The performance of thermoelectric materials is quantified by a dimensionless figure of merit zT, which depends on their properties such as electrical conductivity, Seebeck coefficient and thermal conductivity. Tetrahedrites, a copper antimony sulfosalt mineral, typified by Cu 12-x MxSb 4 S 13 , where M is a transition metal element such as Ni, Zn, Fe or Mn, have great potential for thermoelectric application due to their relatively high zT (close to 1 at 700 K), earth-abundance, environmental friendliness, favorable electrical properties, and most importantly intrinsic low lattice thermal conductivity (less than 1 W m -1 K -1 ) in wide temperature. In addition to energy recovery, reliable energy storage devices are also emerging to relieve the energy demand and improve the efficiency of consuming energy resources. Lithium-ion batteries are known to be reliable and successful electrochemical energy storage devices and appliable in various aspects, including laptops, smartphones and electrical vehicles. Lithium phosphorous oxynitride (LiPON) are widely used as thin-film solid-state electrolytes in Li-ion battery, which is the only demonstrated solid-state electrolyte that is quite stable in direct contact with Li metal at potentials from 0-5 V. However, the structure of LiPON, the effects of N doping, and the origin of its good electrochemical stability remains inconclusive. In this thesis, reliable modeling techniques accompanied with experimental tools, are applied to study the thermoelectric material tetrahedrite and the ionic conductor LiPON, in order to study their structural and dynamical properties. Accurate and efficient density-functional theory (DFT) and density-functional tight-binding (DFTB) methods, combined with molecular dynamics (MD) simulations are utilized in order to investigate the structures and properties of these energy materials. The incoherent and coherent atomic dynamics study of tetrahedrite Cu 10.5 NiZn 0.5 Sb 4 S 13 provides the origin of softening upon cooling by investigate the motion of Cu12e at different temperatures. The dynamic structure factors in the longitudinal and transverse direction will also be discussed. The Cu movement of Cu-rich tetrahedrite Cu 14 Sb 4 S 13 is revealed by Cu self-diffusivity, nuclear density map and “nudged elastic band” (NEB). Moreover, we investigate the effect of simulation cell size and basis sets on the DFT-based MD simulation results using tetrahedrite Cu1 0 Zn 2 Sb 4 S 13 thermoelectric as a model material, showing the advantage of larger cell by accessing smaller Q range. In addition, the low-temperature structural properties of Cu 12 Sb 4 S 13 is measured by neutron diffraction, which indicates that no cubic to tetragonal transition occurs at metal-semiconductor transition (MST) temperature. Thermoelectric properties such as Seebeck coefficient, electrical resistivity and electrical thermal conductivity will also be investigated. DFTB method is implemented to study the structure and transport properties of Li 3 PO 4 and LiPON, while the exploration of N doping effect is included. Lastly, the LiPON/Li interphase will be revealed in order to study the origin of electrochemical stability.

Li, Junchao↗
NASA NTRS1982

Rolling resistance of electric vehicle tires from track tests

Special low-rolling-resistance tires were made for DOE's ETV-1 electric vehicle. Tests were conducted on these tires and on a set of standard commercial automotive tires to determine the rolling resistance as a function of time during both constant-speed tires and SAE J227a driving cycle tests. The tests were conducted on a test track at ambient temperatures that ranged from 15 to 32 C (59 to 89 F) and with tire pressures of 207 to 276 kPa (30 to 40 psi). At a contained-air temperature of 38 C (100 F) and a pressure of 207 kPa (30 psi) the rolling resistances of the electric vehicle tires and the standard commercial tires, respectively, were 0.0102 and 0.0088 kilogram per kilogram of vehicle weight. At a contained-air temperature of 38 C (100 F) and a pressure of 276 kPa (40 psi) the rolling resistances were 0.009 and 0.0074 kilogram per kilogram of vehicle weight, respectively.

Dustin, M. O.↗
NASA NTRS2006

Electrically Conductive Anodized Aluminum Surfaces

Anodized aluminum components can be treated to make them sufficiently electrically conductive to suppress discharges of static electricity. The treatment was conceived as a means of preventing static electric discharges on exterior satin-anodized aluminum (SAA) surfaces of spacecraft without adversely affecting the thermal-control/optical properties of the SAA and without need to apply electrically conductive paints, which eventually peel off in the harsh environment of outer space. The treatment can also be used to impart electrical conductivity to anodized housings of computers, medical electronic instruments, telephoneexchange equipment, and other terrestrial electronic equipment vulnerable to electrostatic discharge. The electrical resistivity of a typical anodized aluminum surface layer lies between 10(exp 11) and 10(exp 13) Omega-cm. To suppress electrostatic discharge, it is necessary to reduce the electrical resistivity significantly - preferably to < or = 10(exp 9) Omega-cm. The present treatment does this. The treatment is a direct electrodeposition process in which the outer anodized surface becomes covered and the pores in the surface filled with a transparent, electrically conductive metal oxide nanocomposite. Filling the pores with the nanocomposite reduces the transverse electrical resistivity and, in the original intended outer-space application, the exterior covering portion of the nanocomposite would afford the requisite electrical contact with the outer-space plasma. The electrical resistivity of the nanocomposite can be tailored to a value between 10(exp 7) and 10(exp 12) Omega-cm. Unlike electrically conductive paint, the nanocomposite becomes an integral part of the anodized aluminum substrate, without need for adhesive bonding material and without risk of subsequent peeling. The electrodeposition process is compatible with commercial anodizing production lines. At present, the electronics industry uses expensive, exotic, electrostaticdischarge- suppressing finishes: examples include silver impregnated anodized, black electroless nickel, black chrome, and black copper. In comparison with these competing finishes, the present nanocomposite finishes are expected to cost 50 to 20 percent less and to last longer.

Nguyen, Trung Hung↗
NASA NTRS1979

Electrical hazards posed by graphite fibers

The direct electrical resistance and the electrical contact resistance of graphite fibers released from both burned and unburned Fiberite T300/1034 composite were measured. The voltage at which arcing occurs due to fibers settling on electrical conductors was also determined. On the basis of results obtained, an assessment was made of the hazards posed by graphite fibers to electrical equipment.

Springer, G. S.↗
NASA NTRS1980

Coatings for graphite fibers

Graphite fibers released from composites during burning or an explosion caused shorting of electrical and electronic equipment. Silicon carbide, silica, silicon nitride and boron nitride were coated on graphite fibers to increase their electrical resistances. Resistances as high as three orders of magnitude higher than uncoated fiber were attained without any significant degradation of the substrate fiber. An organo-silicone approach to produce coated fibers with high electrical resistance was also used. Celion 6000 graphite fibers were coated with an organo-silicone compound, followed by hydrolysis and pyrolysis of the coating to a silica-like material. The shear and flexural strengths of composites made from high electrically resistant fibers were considerably lower than the shear and flexural strengths of composites made from the lower electrically resistant fibers. The lower shear strengths of the composites indicated that the coatings on these fibers were weaker than the coating on the fibers which were pyrolyzed at higher temperature.

Galasso, F. S.↗
NASA NTRS1994

Non-volatile, solid state bistable electrical switch

A bistable switching element is made of a material whose electrical resistance reversibly decreases in response to intercalation by positive ions. Flow of positive ions between the bistable switching element and a positive ion source is controlled by means of an electrical potential applied across a thermal switching element. The material of the thermal switching element generates heat in response to electrical current flow therethrough, which in turn causes the material to undergo a thermal phase transition from a high electrical resistance state to a low electrical resistance state as the temperature increases above a predetermined value. Application of the electrical potential in one direction renders the thermal switching element conductive to pass electron current out of the ion source. This causes positive ions to flow from the source into the bistable switching element and intercalate the same to produce a non-volatile, low resistance logic state. Application of the electrical potential in the opposite direction causes reverse current flow which de-intercalates the bistable logic switching element and produces a high resistance logic state.

Williams, Roger M.↗
DOE OSTI2020

Weighted Mobility

Engineering semiconductor devices requires an understanding of charge carrier mobility. Typically, mobilities are estimated using Hall effect and electrical resistivity meausrements, which are are routinely performed at room temperature and below, in materials with mobilities greater than 1 cm 2 V -1 s -1 . With the availability of combined Seebeck coefficient and electrical resistivity measurement systems, it is now easy to measure the weighted mobility (electron mobility weighted by the density of electronic states). A simple method to calculate the weighted mobility from Seebeck coefficient and electrical resistivity measurements is introduced, which gives good results at room temperature and above, and for mobilities as low as 10 -3 cm 2 V -1 s -1 , <!--FIGURE--> μ w = 331 c m 2 V s ( m Ω c m ρ ) ( T 300 K ) - 3 / 2 [ e x p [ | S | k B / e - 2 ] 1 + exp [ - 5 ( | S | k B / e - 1 ) ] + 3 π 2 | S | k B / e 1 + exp [ 5 ( | S | k B / e - 1 ) ] ] In this paper, μ w is the weighted mobility, ρ is the electrical resistivity measured in mΩ cm, T is the absolute temperature in K, S is the Seebeck coefficient, and k B /e = 86.3 µV K -1 . Weighted mobility analysis can elucidate the electronic structure and scattering mechanisms in materials and is particularly helpful in understanding and optimizing thermoelectric systems.

36 MATERIALS SCIENCE↗
NASA NTRS2006

Semiconductor Bolometers Give Background-Limited Performance

Semiconductor bolometers that are capable of detecting electromagnetic radiation over most or all of the infrared spectrum and that give background-limited performance at operating temperatures from 20 to 300 K have been invented. The term background-limited performance as applied to a bolometer, thermopile, or other infrared detector signifies that the ability to detect infrared signals that originate outside the detector is limited primarily by thermal noise attributable to the background radiation generated external to the bolometer. The signal-to-noise ratios and detectivities of the bolometers and thermopiles available prior to this invention have been lower than those needed for background-limited performance by factors of about 100 and 10, respectively. Like other electrically resistive bolometers, a device according to the invention exhibits an increase in electrical resistance when heated by infrared radiation. Depending on whether the device is operated under the customary constant- current or constant-voltage bias, the increase in electrical resistance can be measured in terms of an increase in voltage across the device or a decrease in current through the device, respectively. In the case of a semiconductor bolometer, it is necessary to filter out visible and shorter-wavelength light that could induce photoconductivity and thereby counteract all or part of the desired infrared- induced increase in resistance. The basic semiconductor material of a bolometer according to the invention is preferably silicon doped with one or more of a number of elements, each of which confers a different variable temperature coefficient of resistance. Suitable dopants include In, Ga, S, Se, Te, B, Al, As, P, and Sb. The concentration of dopant preferably lies in the range between 0.1 and 1,000 parts per billion.

Goebel, John↗
DOE OSTI2024

Pressure-induced metallization and loss of surface magnetism in FeSi

Single-crystalline FeSi samples with a conducting surface state were studied under high pressure and magnetic field by means of electrical resistance measurements to explore how the bulk semiconducting state and the surface state are tuned by the application of pressure. Here, we found that the energy gap associated with the semiconducting bulk phase begins to close abruptly at a critical pressure of ~10 GPa and the bulk material becomes metallic with no obvious sign of any emergent phases or non-Fermi liquid behavior in temperature dependent electrical resistance in the neighborhood of the critical pressure above 3 K. Moreover, the metallic phase appears to remain at near-ambient pressure upon release of the pressure. Interestingly, the hysteresis in the electrical resistance vs magnetic field curve associated with the magnetically ordered conducting surface state decreases with pressure and vanishes at the critical pressure, while the slope of the electrical resistance vs magnetic field curve, which has a negative value for pressure below the critical pressure, decreases in magnitude with pressure and changes sign at the critical pressure. Thus the conducting surface state and the corresponding two-dimensional magnetic order collapse at the critical pressure where the energy gap of the bulk material starts to close abruptly, revealing the connection between the conducting surface state and the semiconducting bulk state in FeSi.

36 MATERIALS SCIENCE↗
DOE OSTI2021

A New Approach to Predict Hydrogeological Parameters Using Shear Waves from the Multichannel Analysis of Surface Waves Method

For near-surface contaminant characterization, the accurate prediction of hydrogeological parameters in anisotropic and heterogeneous environments has been a challenge since the last decades. However, recent advances in near-surface geophysics have facilitated the use of geophysical data for hydrogeological characterization in the last few years. A pseudo 3-D high resolution P-wave shallow seismic reflection survey was performed at the P Reactor Area, Savannah River Site, South Carolina in order to delineate and predict migration pathways of a large contaminant plume including trichloroethylene. This contaminant plume originates from the northwest section of the reactor facility that is located within the Upper Atlantic Coastal Plain. The data were collected with 40 Hz geophones, an accelerated weight-drop as seismic source and 1 m receiver spacing with near- and far-offsets of 0.5 and 119.5 m, respectively. In such areas with near-surface contaminants, a detailed subsurface characterization of the vadose zone hydraulic parameters is very important. Indeed, an inexpensive method of deriving such parameters by the use of seismic reflection surveys is beneficial, and our approach uses the relationship between seismic velocity and hydrogeological parameters together with empirical observations relating porosity to permeability and hydraulic conductivity. Shear wave velocity ( V s ) profiles were estimated from surface wave dispersion analysis of the seismic reflection data and were subsequently used to derive hydraulic parameters such as porosity, permeability, and hydraulic conductivity. Additional geophysical data including core samples, vertical seismic profiling, surface electrical resistivity tomography, natural gamma and electrical resistivity logs allowed for a robust assessment of the validity and geological significance of the estimated V s and hydrogeological models. The results demonstrate the usefulness of this approach for the upper 15 m of shallow unconsolidated sediments even though the survey design parameters were not optimal for surface wave analysis due to the higher than desired frequency geophones.

Engineering↗
NASA NTRS1972

Thermal conductivity of austenitic stainless steel, SRM 735, from 5 to 280 K

Thermal conductivity and electrical resistivity measurements were conducted on two lots of an austenitic stainless steel. Electrical resistivity measurements were performed on the second lot, both before and after the material was hot-swaged and reannealed to a size 1/10 the original diameter. These measurements indicate that this steel can be swaged and reannealed without an appreciable change in thermal conductivity. Electrical resistivity measurements as well as direct thermal conductivity measurements on several specimens from both lots indicate a material variability in these lots of less than 1% in thermal conductivity.

Hust, J. G.↗
NASA NTRS1973

Silicon switching transistor with high power and low saturation voltage

Assembly of two individually encapsulated silicon-chip transistors produces silicon power-transistor that has low electrical resistance and low thermal impedance. Electrical resistance and thermal impedance are low because of short lead lengths, and external contact surfaces are plated to reduce resistance at interfaces.

Stonebraker, E.↗
NASA NTRS1994

The Anderson Current Loop

Four-wire-probe concept applied to electrical-resistance transducers. Anderson current loop is excitation-and-signal-conditioning circuit suitable for use with strain gauges, resistance thermometers, and other electrical-resistance transducers mounted in harsh environments. Used as alternative to Wheatstone bridge. Simplifies signal-conditioning problem, enabling precise measurement of small changes in resistance of transducer. Eliminates some uncertainties in Wheatstone-bridge resistance-change measurements in flight research. Current loop configuration makes effects of lead-wire and contact resistances insignificantly small. Also provides output voltage that varies linearly with change in gauge resistance, and does so at double sensitivity of Wheatstone bridge.

Anderson, Karl F.↗
NASA NTRS1979

Qualification of black electrically conductive paint

A paint having low electrical resistance has been developed. Using a low outgassing polyurethane resin, specific amounts of conductive carbon particles were added to produce paint compositions having a range of electrical resistance. Methods of testing for electrical resistance are discussed. The adhesion of these paints has been tested successfully over the temperature range from liquid nitrogen temperature up to 80 C (176 F).

Park, J. J.↗
DOE OSTI2025

Cation uptake by fine aggregate in hardened cement mortar and its effect on electrical properties

Electrical resistivity tests can be used to evaluate the transport properties of concrete and provide a durability assessment. However, the electrical resistivity is largely dependent on the pore solution composition and recent work suggests that some aggregates have the capacity for cation uptake. This study first aims to provide further evidence for adsorption of cations on aggregate surfaces, without formation of reaction products (e.g. alkali-silica reaction). Secondly, hardened mortar samples were prepared using a fine aggregate with a high alkali affinity and a non-reactive fine aggregate as a control. The electrical resistivity of mortars was measured, and the pore solution of these mortars was obtained through high-pressure extraction. The effect of aggregate moisture dilution on the pore solution was decoupled by using a pore partitioning model. The results indicate that aggregate minerology can influence the pore solution composition through cation uptake. Specific minerals of minor quantity, like biotite, may be responsible for cation exchange. While adsorbed cations strongly affected pore solution and formation factor measurement, the bulk resistivity measurements on hardened mortar were only marginally influenced. Research on other implications of similar aggregate interactions with pore solutions are an intriguing area for future research.

Alkali-aggregate reaction↗
NASA NTRS1985

Thermal and electrical contact conductance studies

Prediction of electrical and thermal contact resistance for pressed, nominally flat contacts is complicated by the large number of variables which influence contact formation. This is reflected in experimental results as a wide variation in contact resistances, spanning up to six orders of magnitude. A series of experiments were performed to observe the effects of oxidation and surface roughness on contact resistance. Electrical contact resistance and thermal contact conductance from 4 to 290 K on OFHC Cu contacts are reported. Electrical contact resistance was measured with a 4-wire DC technique. Thermal contact conductance was determined by steady-state longitudinal heat flow. Corrections for the bulk contribution ot the overall measured resistance were made, with the remaining resistance due solely to the presence of the contact.

Vansciver, S. W.↗
DOE OSTI2024

Effects of N-Doping on Silicon Carbide

Silicon carbide (SiC) is a widely preferred material within many industries due to its favorable properties, most notably its low electrical resistivity at high temperatures, excellent thermal conductivity, and sturdy mechanical properties. Doping, particularly n-type doping, is shown to extremely reduce electrical resistivity, but due to structural changes within the lattice caused by interaction with thermal neutrons, it is possible that other attributes of SiC may also be affected. In addition to review of past literature and data, four-point probe testing, scanning electron microscopy, nanoindentation, strength tests, differential scanning calorimetry and laser flash analysis were used to investigate the effects of n-doping 3C ß-phase SiC. According to temperature dependent measurements, electric resistivity and thermal conductivity both declined as dopant levels increases. Dopant levels are shown to have a significant effect on the mechanical performance of SiC, with the highest dopant levels (4 x 1018 cm-3) providing a 40% decrease in elastic modulus from 420 GPa to 258 GPa and a 30% decrease in hardness from 40 GPa to 27.7 GPa. These values are still above average and doped SiC may prove valuable for nuclear applications.

36 MATERIALS SCIENCE↗