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NASA NTRS2004

Progress of Multicolor Single Detector to Detector Array Development for Remote Sensing

Knowledge of the spatial and temporal distribution of atmospheric species such as CO2, O3, H2O, and CH4 is important for understanding the chemistry and physical cycles involving Earth s atmosphere. Although several remote sensing techniques are suitable for such measurements they are considered high cost techniques involving complicated instrumentation. Therefore, simultaneous measurement of atmospheric species using a single remote sensing instrument is significant for minimizing cost, size and complexity. While maintaining the instrument sensitivity and range, quality of multicolor detector, in terms of high quantum efficiency and low noise are vital for these missions. As the first step for developing multicolor focal plan array, the structure of a single element multicolor detector is presented in this paper. The detector consists of three p-n junction layers of Si, GaSb and InAs wafer bonded to cover the spectral range UV to 900 nm, 800 nm to 1.7 m, and 1.5 m to 3.4 m, respectively. Modeling of the absorption coefficient for each material was carried out for optimizing the layers thicknesses for maximum absorption. The resulted quantum efficiency of each layer has been determined except InAs layer. The optical and electrical characterization of each layer structure is reported including dark current and spectral response measurements of Si pin structure and of GaSb and InAs p-n junctions. The effect of the material processing is discussed.

Abedin, M. Nurul↗

NASA NTRS2004

Arrays of Bolometers for Far-infrared and Submillimeter Astronomy

We describe 12 x 32 arrays of semiconducting cryogenic bolometers designed for use in far-infrared and submillimeter cameras. These 12 x 32 arrays are constructed from 1 x 32 monolithic pop-up detectors developed at NASA Goddard Space Flight Center. The pop-up technology allows the construction of large arrays with high filling factors that provide efficient use of space in the focal planes of far-infrared and submillimeter astronomical instruments. This directly leads to a significant decrease in observing time. The prototype array is currently operating in SHARC II, a facility instrument in use at the Caltech Submillimeter Observatory (CSO). The elements of this array employ a bismuth absorber coating and quarter wave backshort to optimize the bolometer absorption for a passband centered at 350 microns. However, this resonant structure also provides good bolometer performance at 450 and 850 microns, the two additional SHARC II passbands. A second array is to be installed in the High-resolution Airborne Widebandwidth Camera (HAWC), a far-infrared imaging camera for the Stratospheric Observatory for Infrared Astronomy (SOFIA). This array is currently in the final stage of construction, and its completion is expected in early 2004. HAWC is scheduled for commissioning in 2005. The HAWC array employs titanium-gold absorbers and is optimized for uniform absorption from 40 to 300 microns to accommodate all four of its far-infrared passbands. We describe the details of the array construction including the mechanical design and electrical characterization of the constituent linear arrays, comparing the SHARC II and HAWC cases. We also summarize the overall characteristics of the final two-dimensional arrays. Finally, we show examples of array performance in the form of images obtained with SHARC II.

Chuss, D. T.↗

NASA NTRS2005

Chemically Deposited Thin-Film Solar Cell Materials

We have been working on the development of thin film photovoltaic solar cell materials that can be produced entirely by wet chemical methods on low-cost flexible substrates. P-type copper indium diselenide (CIS) absorber layers have been deposited via electrochemical deposition. Similar techniques have also allowed us to incorporate both Ga and S into the CIS structure, in order to increase its optical bandgap. The ability to deposit similar absorber layers with a variety of bandgaps is essential to our efforts to develop a multi-junction thin-film solar cell. Chemical bath deposition methods were used to deposit a cadmium sulfide (CdS) buffer layers on our CIS-based absorber layers. Window contacts were made to these CdS/CIS junctions by the electrodeposition of zinc oxide (ZnO). Structural and elemental determinations of the individual ZnO, CdS and CIS-based films via transmission spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy and energy dispersive spectroscopy will be presented. The electrical characterization of the resulting devices will be discussed.

Raffaelle, R.↗

NASA NTRS2007

Fluence Uniformity Measurements in an Electron Accelerator Used for Irradiation of Extended Area Solar Cells and Electronic Circuits for Space Applications

It is common to have liquid crystal displays and electronic circuit boards with area sizes of the order of 20x20 sq cm on board of satellites and space vehicles. Usually irradiating them at different fluence values assesses the radiation damage in these types of devices. As a result, there is a need for a radiation source with large spatial fluence uniformity for the study of the damage by radiation from space in those devices. Kent State University s Program on Electron Beam Technology has access to an electron accelerator used for both research and industrial applications. The electron accelerator produces electrons with energies in the interval from 1 to 5 MeV and a maximum beam power of 150 kW. At such high power levels, the electron beam is continuously scanned back and forth in one dimension in order to provide uniform irradiation and to prevent damage to the sample. This allows for the uniform irradiation of samples with an area of up to 1.32 sq m. This accelerator has been used in the past for the study of radiation damage in solar cells (1). However in order to irradiate extended area solar cells there was a need to measure the uniformity of the irradiation zone in terms of fluence. In this paper the methodology to measure the fluence uniformity on a sample handling system (linear motion system), used for the irradiation of research samples, along the irradiation zone of the above-mentioned facility is described and the results presented. We also illustrate the use of the electron accelerator for the irradiation of large area solar cells (of the order of 156 sq cm) and include in this paper the electrical characterization of these types of solar cells irradiated with 5 MeV electrons to a total fluence of 2.6 x 10(exp 15) e/sq cm.

Uribe, Roberto M.↗

NASA NTRS2012

Development of Field-Controlled Smart Optic Materials (ScN, AlN) with Rare Earth Dopants

The purpose of this investigation is to develop the fundamental materials and fabrication technology for field-controlled spectrally active optics that are essential for industry, NASA, and DOD applications such as: membrane optics, filters for LIDARs, windows for sensors, telescopes, spectroscopes, cameras, flat-panel displays, etc. ScN and AlN thin films were fabricated on c-axis Sapphire (0001) or quartz substrate with the RF and DC magnetron sputtering. The crystal structure of AlN in fcc (rocksalt) and hcp (wurtzite) were controlled. Advanced electrical characterizations were performed, including I-V and Hall Effect Measurement. ScN film has a free carrier density of 5.8 x 10(exp 20)/per cubic centimeter and a conductivity of 1.1 x 10(exp 3) per centimeter. The background ntype conductivity of as-grown ScN has enough free electrons that can readily interact with the photons. The high density of free electrons and relatively low mobility indicate that these films contain a high level of shallow donors as well as deep levels. Also, the UV-Vis spectrum of ScN and AlN thin films with rare earth elements (Er or Ho) were measured at room temperature. Their optical band gaps were estimated to be about 2.33eV and 2.24eV, respectively, which are obviously smaller than that of undoped thin film ScN (2.4eV). The red-shifted absorption onset gives direct evidence for the decrease of band gap (Eg) and the energy broadening of valence band states are attributable to the doping. As the doped elements enter the ScN crystal lattices, the localized band edge states form at the doped sites with a reduction of Eg. Using a variable angle spectroscopic ellipsometer, the decrease in refractive index with applied field is observed with a smaller shift in absorption coefficient.

Kim, Hyun-Jung↗

NASA NTRS2005

Measurements of Breakdown Field and Forward Current Stability in 3C-SiC P-N Junction Diodes Grown on Step-Free 4H-SiC

This paper reports on initial fabrication and electrical characterization of 3C-SiC p-n junction diodes grown on step-free 4H-SiC mesas. Diodes with n-blocking-layer doping ranging from approx. 2 x 10(exp 16)/cu cm to approx.. 5 x 10(exp 17)/cu cm were fabricated and tested. No optimization of junction edge termination or ohmic contacts was employed. Room temperature reverse characteristics of the best devices show excellent low-leakage behavior, below previous 3C-SiC devices produced by other growth techniques, until the onset of a sharp breakdown knee. The resulting estimated breakdown field of 3C-SiC is at least twice the breakdown field of silicon, but is only around half the breakdown field of <0001> 4H-SiC for the doping range studied. Initial high current stressing of 3C diodes at 100 A/sq cm for more than 20 hours resulted in less than 50 mV change in approx. 3 V forward voltage. 3C-SiC, pn junction, p+n diode, rectifier, reverse breakdown, breakdown field,heteroepitaxy, epitaxial growth, electroluminescence, mesa, bipolar diode

Neudeck, Philip G.↗

NASA NTRS2008

6H-SiC Transistor Integrated Circuits Demonstrating Prolonged Operation at 500 C

The NASA Glenn Research Center is developing very high temperature semiconductor integrated circuits (ICs) for use in the hot sections of aircraft engines and for Venus exploration where ambient temperatures are well above the approximately 300 degrees Centigrade effective limit of silicon-on-insulator IC technology. In order for beneficial technology insertion to occur, such transistor ICs must be capable of prolonged operation in such harsh environments. This paper reports on the fabrication and long-term 500 degrees Centigrade operation of 6H-SiC integrated circuits based on epitaxial 6H-SiC junction field effect transistors (JFETs). Simple analog amplifier and digital logic gate ICs have now demonstrated thousands of hours of continuous 500 degrees Centigrade operation in oxidizing air atmosphere with minimal changes in relevant electrical parameters. Electrical characterization and modeling of transistors and circuits at temperatures from 24 degrees Centigrade to 500 degrees Centigrade is also described. Desired analog and digital IC functionality spanning this temperature range was demonstrated without changing the input signals or power supply voltages.

Neudeck, Philip G.↗

NASA NTRS2015

Packaging Technologies for 500 C SiC Electronics and Sensors: Challenges in Material Science and Technology

This paper presents ceramic substrates and thick-film metallization based packaging technologies in development for 500C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chip-level packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550C. The 96 alumina packaging system composed of chip-level packages and PCBs has been successfully tested with high temperature SiC discrete transistor devices at 500C for over 10,000 hours. In addition to tests in a laboratory environment, a SiC junction field-effect-transistor (JFET) with a packaging system composed of a 96 alumina chip-level package and an alumina printed circuit board was tested on low earth orbit for eighteen months via a NASA International Space Station experiment. In addition to packaging systems for electronics, a spark-plug type sensor package based on this high temperature interconnection system for high temperature SiC capacitive pressure sensors was also developed and tested. In order to further significantly improve the performance of packaging system for higher packaging density, higher operation frequency, power rating, and even higher temperatures, some fundamental material challenges must be addressed. This presentation will discuss previous development and some of the challenges in material science (technology) to improve high temperature dielectrics for packaging applications.

dielectric properties↗

NASA NTRS2019

Electrical and Thermal Characterization of 3D Printed Thermoplastic Parts with Embedded Wires for High Current-Carrying Applications

Fabrication of parts exhibiting multi-functionality has recently been complemented by hybrid polymer extrusion additive manufacturing in combination with wire embedding technology. While much mechanical characterization has been performed on parts produced with fused deposition modeling, limited characterization has been performed when combined electrical and thermal loads are applied to 3D printed multi-material parts. As such, this work describes the design, fabrication, and testing of 3D printed thermoplastic coupons containing embedded copper wires that carried current. An automated fabrication process was used employing a hybrid additive manufacturing machine that dispensed polycarbonate thermoplastic and embedded bare copper wires. Testing included AC and DC hipot testing as well as thermal testing on as-fabricated and heat treated coupons to determine the effect of porosity in the substrate. The heat-treated parts contained reduced amounts of porosity, as corroborated through scanning electron microscopy, which led to 50 % increased breakdown strength and 30 to 40 % increased heat dissipation capabilities. The results of this research are describing a set of design protocol that can be used as a guideline for 3D printed embedded electronics to predict the electrical and thermal behavior.

Hipot testing↗

NASA NTRS2023

RF Metrology of Lunar Highlands Regolith Simulant NU-LHT-2M

Understanding the electrical properties of lunar regolith is vital to modeling radiofrequency(RF) propagation on the lunar surface a fundamental step in planning lunar surface missions. Near the lunar south pole, the regolith has yet to be directly sampled and thus there remains uncertainty in the electrical properties of the regolith. The regolith simulant NU-LHT-2M is a highlands simulant that is representative of the expected chemical composition of the regolith near the lunar south pole. Previous studies have investigated properties of NU-LHT at UHF and S-band[1]. Future missions to the lunar south pole are expected to utilize X and Ka-band for direct-to-Earth links and UHF, S-band, C-band, and Ka-band for lunar surface communication[2]. As a result, it is necessary to electrically characterize the lunar regolith at these frequencies. In this paper, coaxial impedance dielectric reflectometry is performed on the NU-LHT-2M simulant using a commercially available soil permittivity measurement device. This study serves as a preliminary measurement of the simulant and may lead to enhanced efficacy of the measurement hardware for future applications.

simulant↗

NASA NTRSDate not supplied

RF Metrology of Lunar Highlands Regolith Simulant NU-LHT-2M

*Presentation for the publication* Understanding the electrical properties of lunar regolith is vital to modeling radiofrequency (RF) propagation on the lunar surface, a fundamental step in planning lunar surface missions. Near the lunar south pole, the regolith has yet to be directly sampled and thus there remains uncertainty in the electrical properties of the regolith. The regolith simulant NU-LHT-2M is a highlands simulant that is representative of the expected chemical composition of the regolith near the lunar south pole. Previous studies have investigated properties of NU-LHT at UHF and S-band[1]. Future missions to the lunar south pole are expected to utilize X and Ka-band for direct-to-Earth links and UHF, S-band, C-band, and Ka-band for lunar surface communication [2]. As a result, it is necessary to electrically characterize the lunar regolith at these frequencies. In this paper, coaxial impedance dielectric reflectometry is performed on the NU-LHT-2M simulant using a commercially available soil permittivity measurement device. This study serves as a preliminary measurement of the simulant and may lead to enhanced efficacy of the measurement hardware for future applications.

simulant↗

NASA NTRS2024

Single Event Effects Test Report IXYS IXTA96P085T P-Channel -85V MOSFET

This study was undertaken to determine the destructive single event effect and degradation susceptibility of the IXTA96P085T P-Channel -85V MOSFET from IXYS. The device was monitored for destructive single event effects and degradation during exposure to a heavy ion beam at the Berkeley Accelerator Space Effects (BASE) Facility at the Lawrence Berkeley National Laboratory (LBNL). Gate and drain currents were measured during irradiation and a basic set of electrical characterizations was performed following each fluence exposure to assess heavy ion induced damage. The test date was April 10, 2024. This characterization is application specific.

MOSFET↗

DOE OSTI2021

Shielded and Low-Damping SPM Probes For Quantitative Electrical and Electrochemical Characterization (Phase IIB)

The purpose of this DOE SBIR award was to develop new scanning probe microscopy tools for the elucidation of electrical and electrochemical properties at the nanoscale. High performance probes are important for energy materials research. In both solar cells and batteries, the essential physics and chemistry occur at the nanoscale and nanoscale characterization tools are required for their elucidation. The introduced new models are a shielded probe and an electrically insulated probe where only less than one micron of a conductive tip is exposed. In Phases I and IIa, we explored the development of cost-effective methods to insulate cantilevers from aqueous solutions and patented a technology that provides an insulated electrical contact to the tip. Also, our technology was adapted to be compatible with all popular commercial AFM systems. In Phase IIb, we improved reproducibility and batch size to drive down costs while maintaining quality control with testing. We transformed our product into a convenient turnkey solution to make electrochemical characterization approachable to a wide range of researchers. In January 2021, the technology was well received by the AFM community and Nanosurf Inc. (Woburn, MA) acquired Scuba Probe Technologies. The technology and expertise of Scuba Probe Technologies complements Nanosurf’s development of the full range of nano-electrical characterization tools.

36 MATERIALS SCIENCE↗

NASA NTRS1991

Characterization of vertical electric fields and associated voltages induced on a overhead power line from close artificially initiated lightning

Measurements were characterized of simultaneous vertical electric fields and voltages induced at both ends of a 448 m overhead power line by artificially initiated lightning return strokes. The lightning discharges struck ground about 20 m from one end of the line. The measured line voltages could be grouped into two categories: those in which multiple, similarly shaped, evenly spaced pulses were observed, which are called oscillatory; and those dominated by a principal pulse with subsidiary oscillations of much smaller amplitude, which are called impulsive. Voltage amplitudes range from tens of kilovolts for oscillatory voltages to hundreds of kilovolts for impulsive voltages.

Rubinstein, Marcos↗

DOE OSTI2022

Laboratory and Field Characterization of the Electrical Response of Modules Containing Configurable Current Cells (C3) Under Non-Optimal Conditions Such as Shading (Final Report)

This work is to be conducted in support of the American Made Challenges Solar Prize. The intent is to connect competitor teams with national laboratories that can help accelerate the development of innovative solutions and products. Teams who have won the Set! and Go! Contests are eligible to utilize vouchers at national laboratories to advance their ideas. Laboratory and field characterization of the electrical response of modules containing Configurable Current Cells (C3) under non-optimal conditions such as shading.

14 SOLAR ENERGY↗

NASA NTRSDate not supplied

Electrical and Dielectric Characterizations of HTCC Electronic Packages for High Temperature Harsh Environment Applications

A prototype high temperature co-fired ceramic (HTCC) alumina packaging system composed of a 32-I/Os package and a compatible circuit board was previously developed and demonstrated for long term operation in 500 °C environments. The electrical / dielectric parasitic parameters of that chip level package were characterized and reported. This co-fired packaging system with platinum (Pt) conductor has successfully facilitated tests of silicon carbide (SiC) analog and digital integrated circuits (ICs) developed at NASA GRC at 500°C for up to 10,000 hours in ambient oven environment and 60 earth days in Venus surface environment with simulated temperature, pressure, and chemical constituents. Based on these previous results, this paper introduces new designs of Pt-HTCC packages with 16, 24, and 44 I/Os for packaging a new generation SiC ICs with 8, 24, 56, 62, and 72 I/Os to be tested in high temperature harsh environments. The package with 44 I/Os is specifically designed for the new SiC ICs with 56, 62, and 72-I/Os and electrical connection needs, the power pads of this package are consolidated, and an array of I/O pads distributed on separated vertical levels (inside the package) is used to control the overall package dimensions and mitigate the parasitic effects at high temperatures. This paper will present the detailed design of these chip-level packages and results of electrical and dielectric characterization of these newly fabricated chip-level Pt-HTCC packages.

High temperature↗

NASA NTRSDate not supplied

Electrical and Dielectric Characterizations of HTCC Electronic Packages for High Temperature Harsh Environment Applications

High temperature↗

DOE OSTI2021

Shielded and Low-Damping SPM Probes for Quantitative Electrical and Electrochemical Characterization (Phase IIA)

The purpose of this DOE SBIR award was to develop new scanning probe microscopy tools for the elucidation of electrical and electrochemical properties at the nanoscale. High performance probes are important for energy materials research. In both solar cells and batteries, the essential physics and chemistry occur at the nanoscale and nanoscale characterization tools are required for their elucidation. Two products were developed: an electrically shielded probe and an electrically conductive probe with low leakage currents. Our processes were based on post processing of existing probes and fabrication methods were tested, leading to a laser micromachining based approach that led to the first minimal viable product. We invented a method to make a reliable electrical contact that attaches a flexible printed circuit board to the chip. enable leak-free operation crucial when used in conductive liquids and electrolytes. This proprietary solution improves chip handling, reduces contamination, and maintains effective electrical contact. The probes fabricated in this Phase IIa are a minimal viable product which attracted attention from various tip manufacturers and instrument manufacturers alike.

36 MATERIALS SCIENCE↗