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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS2005

Electrical Characterization of Defects in SiC Schottky Barriers

We have been investigating the effect of screw dislocation and other structural defects on the electrical properties of SiC. SiC is a wide-bandgap semiconductor that is currently received much attention due to its favorable high temperature behavior and high electric field breakdown strength. Unfortunately, the current state-of-the-art crystal growth and device processing methods produce material with high defect densities, resulting in a limited commercial viability

Schnabel, C. M.↗
DOE OSTI2023

Microstructural Investigation of Precipitation Treated A709 Test Samples

This report presents the microstructural characterization using scanning transmission electron microscopy (STEM) of two creep-tested ESR1150-PT specimens, one short-term and one long-term. The results show that during creep testing, the microstructure of the A709 ESR1150-PT material continues to evolve as expected due to the synergistic effect of strain, temperature and time. Key features include dislocation forest and cell structures, precipitates on grain boundaries, precipitates randomly within grains, and precipitates associated with dislocations. In addition, the STEM study of one ESR1100-SA specimen that has been tested to rupture at a relatively low temperature (550°C) for a relatively long term (16226 h) is also presented. The results show that there is a high density of very fine nano precipitates form on dislocations.

36 MATERIALS SCIENCE↗
NASA NTRS2014

Data Processing and Experimental Design for Micrometeorite Impacts in Small Bodies

Comets and asteroids have been altered from their original "pristine" state by impacts occurring throughout their 4.5 billion year lives: [1]. Proof of shock deformation has been detected in the crystal structure of several Stardust samples from Comet Wild 2 [2, 3]. Analyses indicated that the planar dislocations in the crystal structure of the minerals had been imparted by impacts sustained during their lives, and not due to the aerogel capture process. Distortions to crystal structure also affect the ideal absorption spectra in the infrared, and [4], thus providing indirect evidence of its impact history and a means of remotely investigating the impact history of small bodies through comparing laboratory spectra with spectra observed by telescopes or spacecraft. -The effects of impacts propagating shock waves through minerals were investigated through laboratory impact experiments. Utilizing NASA Johnson Space Center's Experimental Impact Laboratory, projectiles were fired from the vertical gun at velocities ranging from 2.0 to 2.8 km/sec, projected impact velocities between Kuiper Belt Objects. Two types of projectiles were used, including spherical alumina ceramic, whose density mimics that of rock, and cylinders made from the same material that they impacted. The target materials chosen for testing included: OLIVINES forsterite (Mg2SiO4) and fayalite, Fe2SiO4); PYROXENES enstatite (Mg2Si2O6) and diopside (MgCaSi2O6); and CARBONATES magnesite (MgCO3) and siderite (FeCO3). Targets were impacted at either 25 C or cooled to -20 C to examine the effects of temperature, if any, on lattice distortions during the shock propagation. As comets and asteroids can undergo a wide range of temperatures in their orbital lifetimes, the effect of temperature on the equation of state of minerals being shocked needs to be examined for interpreting the results of these experiments. The porosity of the target mineral is varied by either grinding it into a powder/granular texture or as whole mineral rocks to investigate the differences in shock propagation when voids are present. By varying velocity, ambient temperature, and porosity, we can investigate different variables affecting impacts in the solar system. -Data indicates that there is a non-linear relationship between peak shock pressure and the variation in infrared spectral absorbances by the distorted crystal structure. The maximum variability occurs around 37 GPa in enstatite and forsterite. The particle size distribution of the impacted material similarly changes with velocity/peak shock pressure. -The experiments described above are designed to measure the near- to mid-IR effects from these changes to the mineral structure. See Lederer et al., this meeting for additional experimental results.

Jensen, E.↗
DOE OSTI2022

Structure and glide of Lomer and Lomer-Cottrell dislocations: Atomistic simulations for model concentrated alloy solid solutions

Lomer (L) and Lomer-Cottrell (LC) dislocations have long been considered to be central to work hardening in face-centered cubic (FCC) metals and alloys. These dislocations act as barriers of motion for other dislocations, and can serve as sites for twin nucleation. Recent focus on multicomponent concentrated FCC solid solution alloys has resulted in many reported observations of LC dislocations. While these and L dislocations are expected to have a role in the mechanical behavior of these alloys, little is understood about how variations in composition and associated fault energies change the response of these dislocations under stress. Here we present atomistic simulations of L and LC dislocations in a model Cu-Ni system and find that changes in composition and applied stress conditions result in a wide variety of responses, including changes in core configuration and (100) glide. The results are compared to and extend previous literature related to the nature of L/LC core structures and how they vary with respect to intrinsic materials properties and stress states. This study also provides insights into mechanisms such as twin nucleation that could have important implications for work hardening in FCC solid-solution alloys.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1984

Defects in High Speed Growth of EFG Silicon Ribbon

Silicon ribbons grown by the Edge-defined Film-fed Growth (EFG) technique exhibit a characteristic defect structure typified by twins, dislocations, grain boundaries and silicon carbide inclusions. As growth speed is increased from less than 2.5 cm per minute, the structural details change. The major difference between the ribbons grown at speeds below and above 2.5 cm per minute is in the generation of a cellular structure at the higher growth speeds, observable in the ribbon cross section. The presence of the cross sectional structure leads, in general, to a reduction in cell performance. Models to explain the formation of such a cross sectional structure are presented and discussed.

Rao, C. V. H. N.↗
DOE OSTI2021

Atomic structures of interfacial solute gateways to θ' precipitates in Al-Cu alloys

Many materials employed in critical structural applications depend upon metastable strengthening precipitates that transform or dissolve at elevated temperatures. Herein, aberration-corrected scanning transmission electron microscopy and first-principles calculations are used to accurately determine the atomic structure of the highly mobile, semi-coherent precipitate interfaces that control this process in the classic θ' (Al 2 Cu) precipitate in the Al-Cu system. Semi-coherent {110} interfaces are found to be composed of an array of unexpected misfit dislocations that are arranged in two different structural units. Dislocations accommodate nearly all of the misfit between the Al matrix and strengthening phase. Cu is observed to segregate to the compressed edge of the dislocation cores at specific sites in this interface. First-principles calculations revealed the energetic landscape that facilitates these sites to become entry and exit gateways of Cu atoms in this semi-coherent interface. In conclusion, this investigation reveals critical features within semi-coherent interfaces that determine the thermal stability of precipitation-hardened alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Comparative modeling of the disregistry and Peierls stress for dissociated edge and screw dislocations in Al

Many elementary deformation processes in metals involve the motion of dislocations. The planes of glide and specific processes dislocations prefer depend heavily on their atomic core structures. Atomistic simulations are desirable for dislocation modeling but their application to even sub-micron scale problems is in general computationally costly. Accordingly, continuum-based approaches, such as the phase-field microelasticity, phase-field dislocation dynamics (PFDD), generalized Peierls–Nabarro (GPN) models, and the concurrent atomistic–continuum (CAC) method, have attracted increasing attention in the field of dislocation modeling because they well represent both short-range cores interactions and long-range stress fields of dislocations. To better understand their similarities and differences, it is useful to compare these methods in the context of benchmark simulations and predictions. In this paper, we apply the CAC method and different PFDD variants – one of them is equivalent to a GPN model – to simulate an extended (i.e., dissociated) dislocation in Al with initially pure edge or pure screw character in terms of the disregistry. CAC and discrete forms of PFDD are also employed to calculate the Peierls stress. By conducting comprehensive convergence studies, we quantify the dependence of these measures on time/grid resolution and simulation cell size. Several important but often overlooked differences between PFDD/GPN variants are clarified. In conclusion, our work sheds light on the advantages and limitations of each method, as well as the path towards enabling them to effectively model complex dislocation processes at larger length scales.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Effect of a micro-scale dislocation pileup on the atomic-scale multi-variant phase transformation and twinning

In this paper, we perform concurrent atomistic–continuum (CAC) simulations to assess the contribution of the internal stress induced by the microscale dislocation pileup at an atomically structured interface to the atomic-scale phase transformations (PTs), reverse PTs, and twinning. The main novelty of this work is to unify the atomistic description of the interface and the coarse-grained (CG) description of the lagging dislocations away from the interface within one single framework. Our major findings are: (a) the interface dynamically responds to a pileup by forming steps/ledges, the height of which is proportional to the number of dislocations arriving at the interface; (b) the pileup-induced internal stress concentration profile follows neither the classical Eshelby model nor the super-dislocation model alone, but a combination of them; (c) when the pre-sheared sample is compressed, a direct square-to-hexagonal PT occurs ahead of the pileup tip and eventually grows into a wedge shape. The two variants of the hexagonal phases form a twin with respect to each other; (d) upon a further increase of the loading, part of the newly formed hexagonal phase transforms back to the square phase. The square product phase resulting from this reverse PT forms a twin with respect to the initial square phase. All phase boundaries (PBs) and twin boundaries (TBs) are stationary and correspond to zero thermodynamic Eshelby driving forces; and (e) the microscale dislocation pileup-induced internal shear stress and the structural change at the atomic-scale interface reduces the stress required for initiating a PT by a factor of 5.5, comparing with that in the sample containing no dislocations. This work is the first characterization of the behavior of PTs/twinning resulting from the reaction between a microscale dislocation slip and an atomically structured interface. In conclusion, the gained knowledge will advance our understanding of how the multi-phase material behaves in many complex physical processes, such as the synthesis of multi-phase high-entropy alloys or superhard ceramics under high-pressure torsion, deep mantle earthquakes in geophysics, and so on, which all involve dislocation slip, PTs, twinning, and their interactions across from the atomistic to the microscale and beyond.

36 MATERIALS SCIENCE↗
NASA NTRS1982

Microstructural effects on the room and elevated temperature low cycle fatigue behavior of Waspaloy

Longitudinal specimens of Waspaloy containing either coarse grains with small gamma or fine grains with large gamma were tested in air at a frequency of 0.33 Hz or 0.50 Hz. The coarse grained structures exhibited planar slip on (III) planes and precipitate shearing at all temperatures. Cracks initiated by a Stage 1 mechanism and propagated by a striation forming mechanism. At 700 C and 800 C, cleavage and intergranular cracking were observed. Testing at 500 C, 700 C, and 800 C caused precipitation of grain boundary carbides. At 700 C, carbides precipitated on slip bands. The fine grained structures exhibited planar slip on (111) planes. Dislocations looped the large gamma precipitates. This structure led to stress saturation and propagation was observed. Increasing temperatures resulted in increased specimen oxidation for both heat treatments. Slip band and grain boundary oxidation were observed. At 800 C, oxidized grain boundaries were cracked by intersecting slip bands which resulted in intergranular failure. The fine specimens had crack initiation later in the fatigue life, but with more rapid propagation crack propagation.

Lerch, B. A.↗
DOE OSTI2022

Phase field modeling of dislocations and obstacles in InSb

We present a phase-field dislocation dynamics (PFDD) model informed by first-principle calculations to elucidate the competitive dislocation nucleation and propagation between the glide and shuffle sets in InSb diamond cubic crystal. The calculations are directly informed with generalized stacking fault energy curves on the (111) slip plane for both the “glide set,” with the smaller interplanar spacing, and the “shuffle set,” with the larger interplanar spacing. The formulation also includes elastic anisotropy and the gradient term associated with the dislocation core. The PFDD calculations show that under no stress the equilibrium structure of screw glide set dislocations dissociates into Shockley partials, while those of the shuffle set dislocations do not dissociate, remaining compact. The calculated dislocation core widths of these InSb dislocations agree well with the measured values for other semiconductor materials, such as Si and GaN. We find that a shuffle set dislocation emits from a dislocation source at an applied stress about three times smaller than that needed to emit leading and trailing partials successively on the glide set plane. Once the partial dislocations in the glide set are emitted, they propagate faster than the shuffle set perfect dislocation at the same stress level.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Van der Waals Nanowires with Continuously Variable Interlayer Twist and Twist Homojunctions

Abstract Moiré patterns at van der Waals interfaces between twisted 2D crystals give rise to distinct optoelectronic excitations, as well as, narrowly dispersive bands responsible for correlated electron phenomena. Contrasting with the conventional, mechanically stacked planar twist moirés, recent work shows twisted van der Waals interfaces spontaneously formed in nanowires of layered crystals, where Eshelby twist due to axial screw dislocations stabilizes a chiral structure with small interlayer rotation. Here, the realization of tunable twist in germanium(II) sulfide (GeS) van der Waals nanowires is reported. Tapered nanowires host continuously variable interlayer twist. Homojunctions between dislocated (chiral) and defect‐free (achiral) segments are obtained by triggering the emission of axial dislocations during growth. Measurements across such junctions, implemented here using local absorption and luminescence spectroscopy, provide a convenient tool for detecting twist effects. The results identify a versatile system for 3D twistronics, probing moiré physics, and for realizing moiré architectures without equivalent in planar systems.

Sutter, Peter↗
DOE OSTI2022

Disclination-dislocation based model for grain boundary stress field evolution due to slip transmission history and influence on subsequent dislocation transmission

This work demonstrates how the structure of a grain boundary (GB) and its evolution due to slip transmission history influences subsequent dislocation transmission. First, a model for the evolution of stress fields within grain boundaries that accounts for the effects of coherent dislocation transmission is introduced. Starting with a disclination-based construct of GBs at minimum energy (equilibrium), the model describes the evolution of the GB stress field to a state characteristic of excess energy (non-equilibrium) due to the incorporation of residual Burgers vector content following sequential slip transmission events. Several essential features of this model are verified via molecular dynamics simulations of lattice dislocation absorption. Second, this model is implemented into a discrete dislocation dynamics (DDD) code and simulations are performed to understand the influence of Non-equilibrium GB stress fields, conditioned by the slip transmission history, on subsequent dislocation transmission. DDD simulations reveal that the critical resolved stress necessary for slip propagation can be reduced by with continued absorption of residual dislocation content. Moreover, DDD simulations prove that a comprehensive consideration of both the binding and driving stresses, and the evolution of the transmission configuration is necessary to quantify the influence of the mechanical state of the GB on slip propagation. In general, this work provides important insights into the role of GB structure evolution, conditioned by prior deformation history, on intergranular plasticity.

42 ENGINEERING↗
DOE OSTI2025

Resolving electrochemically triggered topological defect dynamics and structural degradation in layered oxides

Understanding topological defects-controlled structural degradation of layered oxides—a key cathode material for high-performance lithium-ion batteries—plays a critical role in developing next-generation cathode materials. Here, by constructing a nanobattery in an electron microscope enabling atomic-scale monitoring of electrochemcial reactions, we captured the electrochemically driven atomistic dynamics and evolution of dislocations—a most important topological defect in material. We deciphered how dislocations nucleate, move, and annihilate within layered cathodes at the atomic scale. Specifically, we found two types of dislocation configurations, i.e., single dislocations and dislocation dipoles. Both pure dislocation glide/climb and mixed motions were captured, and the dislocation glide and climb velocities were first experimentally measured. Moreover, dislocation activity-mediated structural degradation such as crack nucleation, phase transformation, and lattice reorientation was unraveled. Our work provides deep insights into the atomistic dynamics of electrochemically driven dislocation activities in layered oxides.

Wang, Chunyang (ORCID:0000000184613952)↗
DOE OSTI2021

Disconnection-Mediated Transition in Segregation Structures at Twin Boundaries

Twin boundaries play an important role in the thermodynamics, stability, and mechanical properties of nanocrystalline metals. Understanding their structure and chemistry at the atomic scale is key to guide strategies for fabricating nanocrystalline materials with improved properties. In this work, we report an unusual segregation phenomenon at gold-doped platinum twin boundaries, which is arbitrated by the presence of disconnections, a type of interfacial line defect. By using atomistic simulations, we show that disconnections containing a stacking fault can induce an unexpected transition in the interfacial-segregation structure at the atomic scale, from a bilayer, alternating-segregation structure to a trilayer, segregation-only structure. This behavior is found for faulted disconnections of varying step heights and dislocation characters. Supported by a structural analysis and the classical Langmuir–McLean segregation model, we reveal that this phenomenon is driven by a structurally induced drop of the local pressure across the faulted disconnection accompanied by an increase in the segregation volume.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Chirality and dislocation effects in single nanostructures probed by whispering gallery modes

Nanostructures such as nanoribbons and -wires are of interest as components for building integrated photonic systems, especially if their basic functionality as dielectric waveguides can be extended by chiroptical phenomena or modifications of their optoelectronic properties by extended defects, such as dislocations. However, conventional optical measurements typically require monodisperse (and chiral) ensembles, and identifying emerging chiral optical activity or dislocation effects in single nanostructures has remained an unmet challenge. Here we show that whispering gallery modes can probe chirality and dislocation effects in single nanowires. Wires of the van der Waals semiconductor germanium(II) sulfide (GeS), obtained by vapor–liquid–solid growth, invariably form as growth spirals around a single screw dislocation that gives rise to a chiral structure and can modify the electronic properties. Cathodoluminescence spectroscopy on single tapered GeS nanowires containing joined dislocated and defect-free segments, augmented by numerical simulations and ab-initio calculations, identifies chiral whispering gallery modes as well as a pronounced modulation of the electronic structure attributed to the screw dislocation. Further, our results establish chiral light-matter interactions and dislocation-induced electronic modifications in single nanostructures, paving the way for their application in multifunctional photonic architectures.

36 MATERIALS SCIENCE↗
NASA NTRS2012

Collisional Histories of Comets and Trojan Asteroids: Diopside, Magnesite, and Fayalite Impact Studies

Comets and asteroids have weathered dynamic histories, as evidenced by their rough surfaces. The Nice model describes a violent reshuffling of small bodies during the Late Heavy Bombardment, with collisions acting to grind these planetesimals away. This creates an additional source of impact material that can re-work the surfaces of the larger bodies over the lifetime of the solar system. Here, we investigate the possibility that signatures due to impacts (e.g. from micrometeoroids or meteoroids) could be detected in their spectra, and how that can be explained by the physical manifestation of shock in the crystalline structure of minerals. All impact experiments were conducted in the Johnson Space Center Experimental Impact Laboratory using the vertical gun. Impact speeds ranged from approx.2.0 km/s to approx.2.8 km/s. All experiments were conducted at room temperature. Minerals found in comets and asteroids were chosen as targets, including diopside (MgCaSi2O6, monoclinic pyroxene), magnesite (MgCO3, carbonate), and fayalite (FeSiO4, olivine). Impacted samples were analyzed using a Fourier Transform Infrared Spectrometer (FTIR) and a Transmission Electron Microscope (TEM). Absorbance features in the 8-13 m spectral region demonstrate relative amplitude changes as well as wavelength shifts. Corresponding TEM images exhibit planar shock dislocations in the crystalline structure, attributed to deformation at high strain and low temperatures. Elongating or shortening the axes of the crystalline structure of forsterite (Mg2SiO4, olivine) using a discrete dipole approximation model (Lindsay et al., submitted) yields changes in spectral features similar to those observed in our impacted laboratory minerals.

Lederer, S. M.↗
NASA NTRS1995

Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen-passivated HE InP cell results will also be presented.

Chatterjee, B.↗