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At least 181 records · Page 10

Investigation of long term stability in metal hydrides

It is apparent from the literature and the results of this study that cyclic degradation of AB(5) type metal hydrides varies widely according to the details of how the specimens are cycled. The Rapid Cycle Apparatus (RCA) used produced less degradation in 5000 to 10000 cycles than earlier work with a Slow Cycle Apparatus (SCA) produced in 1500 cycles. Evidence is presented that the 453 K (356 F) Thermal Aging (TA) time spent in the saturated condition causes hydride degradation. But increasing the cooling (saturation) period in the RCA did not greatly increase the rate of degradation. It appears that TA type degradation is secondary at low temperatures to another degradation mechanism. If rapid cycles are less damaging than slow cycles when the saturation time is equal, the rate of hydriding/dehydriding may be an important factor. The peak temperatures in the RCA were about 30 C lower than the SCA. The difference in peak cycle temperatures (125 C in the SCA, 95 C in RCA) cannot explain the differences in degradation. TA type degradation is similar to cyclic degradation in that nickel peaks and line broadening are observed in X ray diffraction patterns after either form of degradation.

Marmaro, Roger W.↗

Processing Bi-Pb-Sr-Ca-Cu-O superconductors from amorphous state

The bismuth based high T sub c superconductors can be processed via an amorphous Bi-Pb-Sr-Ca-Cu oxide. The amorphous oxides were prepared by melting the constituent powders in an alumina crucible at 1200 C in air followed by pouring the liquid onto an aluminum plate, and rapidly pressing with a second plate. In the amorphous state, no crystalline phase was identified in the powder x ray diffraction pattern of the quenched materials. After heat treatment at high temperature the amorphous materials crystallized into a glass ceramic containing a large fraction of the Bi2Sr2Ca2Cu3O(x) phase T sub c = 110 K. The processing method, crystallization, and results of dc electrical resistivity and ac magnetic susceptibility measurements are discussed.

Chiang, C. K.↗

Diffraction image formation in optical systems with polarization aberrations. II - Amplitude response matrices for rotationally symmetric systems

In the previous paper in this series (McGuire and Chipman, 1990), a formulation was established for the calculation and analysis of diffraction image quality in polarizing optical systems illuminated with partially polarized, partially coherent light. In the present paper, the effect of second- and fourth-order polarization aberrations on the image plane diffraction patterns are examined. The amplitude response matrix is calculated for optical systems with small numerical apertures. Numerical results are presented for optical systems with circular apertures for three of the aberration types.

Mcguire, James P., Jr.↗

Microstructural investigations of light-emitting porous Si layers

The structural and morphological characteristics of visible-light-emitting porous Si layers produced by anodic and stain etching of single-crystal Si substrates are compared using transmission electron microscopy and atomic force microscopy (AFM). AFM of conventionally anodized, laterally anodized and stain-etched Si layers show that the layers have a fractal-type surface morphology. The anodized layers are rougher than the stain-etched films. At higher magnification 10 nm sized hillocks are visible on the surface. Transmission electron diffraction patterns indicate an amorphous structure with no evidence for the presence of crystalline Si in the near-surface regions of the porous Si layers.

George, T.↗

Scanning For Hotspots In Lamp Filaments

Scanning photometer designed for use in investigation of failures of incandescent lamp filaments. Maps brightness as function of position along each filament to identify bright (hot) spots, occurring at notches and signifying incipient breaks or rewelds. Also used to measure nonuniformity in outputs of such linear devices as light-emitting diodes, and to measure diffraction patterns of lenses.

Powers, Charles E.↗

Pinhole Calibrator For Particle-Sizing Instrument

Rotating-pinhole calibrator designed for use in calibrating and testing optical instrument measuring sizes of cloud droplets, dust particles, and other small particles suspended in flowing air. Easily attachable to particle-size-measuring instrument and suitable for both quick verification of calibration in field and detailed calibration studies in laboratory. Calibrator used to determine such operating parameters of instrument as optical collection angles, depth of field, profile of laser beam used to measure particles, and response to trajectory of particle. Also used to align instrument. Pinhole reused any number of times without risk of variation in diffraction pattern. Furthermore, size of pinhole chosen precisely and at will.

Hovenac, Edward↗

Phase transformations in 40-60-GPa shocked gneisses from the Haughton Crater (Canada): An Analytical Transmission Electron Microscopy (ATEM) study

In order to better understand phase transformations, chemical migration, and isotopic disequilibrium in highly shocked rocks, we have performed a microprobe and an ATEM study on gneisses shocked up to 60 GPa from the Haughton Crater. This study reveals the following chemical and structural characteristics: (1) SiO2 dominant areas are formed by a mixture of pure SiO2 polycrystalline quartz identified by electron diffraction pattern and chemical analysis and a silica-rich amorphous phase containing minor amounts of aluminium, potassium, and iron; (2) Areas with biotitelike composition are formed by less than 200-nm grains of iron-rich spinels embedded in a silica-rich amorphous phase that is very similar to the one described above; (3) Layers with feldsparlike composition are constituted by 100-200-nm-sized alumina-rich grains (the indexation of the crystalline structure is under progress) and the silica-rich amorphous phase; (4) Zones characterized by the unusual Al/Si ratio close to 1 are formed by spinel grains (200-nm-sized) embedded in the same silica-rich amorphous phase; and (5) The fracturated sillimanites contain domains with a lamellar structure, defined by the intercalation of 100-nm-wide lamellae of mullite crystals and of a silica-rich amorphous phase. These mullite crystals preserved the crystallographical orientation of the preshock sillimanite. All compositional domains, identified at the microprobe scale, can thus be explained by a mixture in different proportion between the following phases: (1) a silica-rich amorphous phase, with minor Al and K; (2) quartz crystals; (3) spinel crystals and alumina-rich crystals; (4) sillimanite; and (5) mullite. Such mixtures of amorphous phases and crystals in different proportions explain disturbed isotope systems in these rocks and chemical heterogeneities observed on the microprobe.

Martinez, I.↗

High quality flame deposited diamond films for infrared optical windows

The IR absorption in polycrystalline diamond films deposited in oxygen-acetylene flames is characterized using FTIR. The one-phonon absorption coefficient in the region from 7 to 12 microns that is related to extrinsic defects in the diamond films shows a strong dependence on the flame conditions as well as the substrate temperature. A high degree of diamond crystalline perfection, as judged from the undetectable one-phonon absorption, is achieved under the optimized deposition conditions for our flame setup. This is further supported by the sharp Raman peak at 1332/cm as well as the high purity in crystal orientation according to the X-ray diffraction pattern measured for the high quality diamond films.

Tzeng, Y.↗

Organometallic chemical vapor deposition and characterization of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates

In this paper, we report the epitaxial growth of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates by open tube OMCVD. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 can be deposited on (001) GaP. Epitaxial growth with mirror smooth surface morphology has been achieved for x less than or equals to 0.05. Selected area electron diffraction pattern of the alloy shows that the epitaxial layer crystallizes in the chalcopyrite structure with relatively weak superlattice reflections indicating certain degree of randomness in the cation sublattice. Hall measurements show that the alloys are p-type, like the unalloyed films; the carrier concentration, however, dropped about 10 times from 2 x 10 exp 18 to 2 x 10 exp 17/cu cm. Absorption measurements indicate that the band tailing in the absorption spectra of the alloy has been shifted about 0.04 eV towards shorter wavelength as compared to the unalloyed material.

Xing, G. C.↗

Ultrasonic Inspection With Angular-Power-Spectrum Scanning

Principal advantage of angular-power-spectrum scanning (APSS) is that, unlike x-radiography and prior ultrasonic techniques, it reveals subtle distributions of microstructural features; e.g., variations in densities of micropores or regions in which fibers and matrices are poorly bonded to each other. Potential applications include development and characterization of composite-material components of large structures, such as buildings and bridges; determination of quality and detection of damage in fiberglass hulls, surfboards, ladders, and scaffolds; and development of porous prosthetic skins and complicated "smart" materials. Superposed diffraction patterns give clues to internal structural features of ceramic composites.

Generazio, Edward R.↗

Organometallic chemical vapor deposition and characterization of ZnGeP2/GaP multiple heterostructures on GaP substrates

The growth of ZnGeP2/GaP double and multiple heterostructures on GaP substrates by organometallic chemical vapor deposition is reported. These epitaxial films were deposited at a temperature of 580 C using dimethylzinc, trimethylgallium, germane, and phosphine as source gases. With appropriate deposition conditions, mirror smooth epitaxial GaP/ZnGeP2 multiple heterostructures were obtained on (001) GaP substrates. Transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) studies of the films showed that the interfaces are sharp and smooth. Etching study of the films showed dislocation density on the order of 5x10(exp 4)cm(sup -2). The growth rates of the GaP layers depend linearly on the flow rates of trimethylgallium. While the GaP layers crystallize in zinc-blende structure, the ZnGeP2 layers crystallize in the chalcopyrite structure as determined by (010) electron diffraction pattern. This is the first time that multiple heterostructures combining these two crystal structures were made.

Xing, G. C.↗

Organometallic chemical vapor deposition and characterization of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates

The epitaxial growth of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates by open tube organometallic chemical vapor deposition (OMCVD) is reported. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 can be deposited on (001) GaP. Epitaxial growth with mirror smooth surface morphology was achieved for x less than or equal to 0.05. Transmission electron microscopy (TEM) micrographs of these alloys show specular epitaxy and the absence of microstructural defects indicating a defect density of less than 10(exp 7) cm(sup -2). Selected area electron diffraction pattern of the alloy shows that the epitaxial layer crystallizes in the chalcopyrite structure with relatively weak superlattice reflections indicating certain degree of randomness in the cation sublattice. Hall measurements show that the alloys are p-type, like the unalloyed films; the carrier concentration, however, dropped about 10 times from 2 x 10(exp 18) to 2 x 10(exp 17) cm(sup -3). Absorption measurements indicate that the band tailing in the absorption spectra of the alloy was shifted about 0.04 eV towards shorter wavelength as compared to the unalloyed material. Diodes fabricated from the n(+)-GaP/p-ZnSiP2-ZnGeP2-Ge heterostructure at x = 0.05 have a reverse break-down voltage of -10.8 V and a reverse saturation current density of approximately 6 x 10(exp -8) A/sq cm.

Xing, G. C.↗

Figures of merit for laser beam quality

It was shown how full-width at half maximum (FWHM), full-width at 1/e(sup 2) (FW1/e(sup 2)), Strehl ratio, and encircled energy figures of merit vary with different types of aberration and measurement methods. The array sampling method and the slit-scan method are examined in detail. Our irradiance in the exit pupil of the optical system is a simple gaussian. It was found that in general the slit-scan method and the array method do not yield the same result. The width measurements for the central lobe of the diffraction pattern are very insensitive to aberration.

Milster, T. D.↗

A study of the superconducting properties of YBa2Cu(9-x)Nb(x)O(y) thin films

Effect of Niobium substitution at the copper site in YBa2Cu3O(7-x) was studied in thin film form. The films were deposited by laser ablation technique using the targets of the YBa2Cu(3-x)Nb(x)O(y) where x = 0.0, 0.025, 0.05, 0.1, 0.2, 0.4, 0.8 and 1.0 under identical deposition conditions on SrTiO3 (100) substrates. Films were characterized by XRD, resistivity, I-V and J(sub c) measurements. Films made from x = 0.025 and 0.05 concentrations of Nb substituted targets showed relatively improved superconducting properties compared to that of undoped films. the best J(sub c) realized for x - 0.025 Nb concentration was 1.8 x 10(exp 6) A/sq cm and for 0.05 Nb concentration it was 3.2 x 10(exp 6) A/sq cm at 77 K. However, degradation of the superconducting properties, with the increase of x is greater than or equal to 0.1 Nb concentration and drastic suppression and complete loss of superconductivity was noticed for x is greater than or equal to 0.4. The growth of impurity phase YBa2NbO6 for x = 0.1 and above of Nb concentration was noted from XRD (X-Ray Diffraction) patterns. However, the site occupancy of Nb could not be confirmed from these studies.

Srinivas, S.↗

Optimizing Process Parameters to Produce Single Phase YBa2Cu3O7 Powder

Process parameters such as temperature and time are varied to obtain single phase (pure) YBa2Cu307 powders. X-ray diffraction patterns of superconducting and nonsuperconducting powders are observed in situ in normal and elevated temperature environments to confirm known strong peaks that are unique to YBa2Cu307. Peaks vary in magnitude as a result of superconducting - nonsuperconducting phase transitions. Known strong peaks serve as our basis in monitoring transitional changes. Peak isotherms obtained experimentally are correlated with theoretical models to identify the weighting factor that characterizes the optimum isotherm. By isolating the parameters under which 100% peak growth occurs most rapidly, we obtain the optimum isotherm. The choices made for firing temperature and atmosphere were determined to be the primary factors necessary to ensure sample purity.

Hurley, J. S.↗

Diffraction of a Gaussian Beam by a Spherical Obstacle

The Kirchhoff integral for diffraction in the near-forward direction is derived from the exact solution of the electromagnetic boundary value problem of a focused Gaussian laser beam incident on a spherical particle. The diffracted intensity in the vicinity of the particle is computed and the way in which the features of the diffraction pattern depend on the width of the Gaussian beam is commented on.

Lock, James A.↗

Stationary Crystal Diffraction with a Monochromatic Convergent X-Ray Source and Application for Macromolecular Crystal Data Collection

A diffraction geometry utilizing convergent X-rays from a polycapillary optic incident on a stationary crystal is described. A mathematical simulation of the resulting diffraction pattern (in terms of spot shape, position and intensity) is presented along with preliminary experimental results recorded from a lysozyme crystal. The effective source coverage factor is introduced to bring the reflection intensities onto the same scale. The feasibility of its application to macromolecular crystal data collection is discussed.

Ho, Joseph X.↗

Stability of Ceramics in Hydrogen between 4000 and 4500 F

The various reactions that are possible between hydrogen and certain ceramic materials are discussed as well as the means of measuring the extent of such reactions. Powdered carbides, nitrides, borides, and oxides were tested. These materials were heated inductively in a tungsten cup between 4000 and 4500 F for two 1-hour periods under a static hydrogen atmosphere. Weight, pressure, and diffraction pattern changes were observed, and these served to indicate the extent of reaction. Most of the ceramics, HfC, ZrC, TiC, TaC, NbC, WC, MO2C, HfN, ZrN, NbN, ZrB2, NbB2, and WB, showed less reaction than the minimum detectable value. However, the ceramics, TiN, TaN, HfB2, TiB2, ZrO2, and Cr2O3, apparently reacted to a measurable extent with hydrogen. Reactions of SiC, VC, and TaB2 with hydrogen were not determinable because of their incompatibility with the tungsten container.

May, Charles E.↗