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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10

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NASA NTRS1979

Development of concepts for satellite retrieval devices

The teleoperator being developed to augment the Space Transportation System (STS) for satellite placement, retrieval, or servicing at altitudes or orbital planes where it would be impractical to use the shuttle is primarily a general purpose propulsion stage that can be fitted with manipulator arms, automated servicers and satellite retrieval devices for particular missions. Design concepts for a general purpose retrieval device for docking with a satellite to which a grappling fixture has been attached, and for a retrieval device for docking with the Solar Maximum Mission (SMM) spacecraft were defined. The mechanical aspects of these two devices are discussed as well as the crew operations involved and problems created by the requirement for remote control. Drawings for the two retrieval device concepts are included.

Pruett, E. C.↗

NASA NTRS1980

Determination of optimum voltages of ion focusing devices using computer techniques

Electric potentials for two dimensional cross sections of ion focusing devices used in a mass spectrometer are calculated via a series of computer programs designed to compute potentials between areas of fixed voltages. Ion trajectories within these devices may be determined by computer and a histogram obtained which plots ion density against ion position along a plate of the focusing device. For each lens system, a plate voltage may be changed, the electric potentials recalculated, and a new histogram calculated in order to determine if the new voltage configuration has increased the device's efficiency. This process may be repeated until the optimum voltage values have been found for maximum particle transmission in each focusing device.

Eckstein, B. A.↗

NASA NTRS1980

The spatial and logical organization of devices in an advanced industrial robot system

This paper describes the geometrical and device organization of a robot system which is based in part upon transformations of Cartesian frames and exchangeable device tree structures. It discusses coordinate frame transformations, geometrical device representation and solution degeneracy along with the data structures which support the exchangeable logical-physical device assignments. The system, which has been implemented in a minicomputer, supports vision, force, and other sensors. It allows tasks to be instantiated with logically equivalent devices and it allows tasks to be defined relative to appropriate frames. Since these frames are, in turn, defined relative other frames this organization provides a significant simplification in task specification and a high degree of system modularity.

Ruoff, C. F.↗

NASA NTRS1981

Thermodynamic limits to the efficiency of solar energy conversion by quantum devices

The second law of thermodynamics imposes a strict limitation to the energy converted from direct solar radiation to useful work by a quantum device. This limitation requires that the amount of energy converted to useful work (energy in any form other than heat) can be no greater than the change in free energy of the radiation fields. Futhermore, in any real energy conversion device, not all of this available free energy in the radiation field can be converted to work because of basic limitations inherent in the device itself. A thermodynamic analysis of solar energy conversion by a completely general prototypical quantum device is presented. This device is completely described by two parameters, its operating temperature T sub R and the energy threshold of its absorption spectrum. An expression for the maximum thermodynamic efficiency of a quantum solar converter was derived in terms of these two parameters and the incident radiation spectrum. Efficiency curves for assumed solar spectral irradiance corresponding to air mass zero and air mass 1.5 are presented.

Buoncristiani, A. M.↗

NASA NTRS1982

Aeroacoustic performance of an externally blown flap configuration with several flap noise suppression devices

Small scale model acoustic experiments were conducted to measure the noise produced in the flyover and sideline planes by an engine under the wing externally blown flap configuration in its approach attitude. Broadband low frequency noise reductions as large as 9 dB were produced by reducing the separation distance between the nozzle exhaust plane and the flaps. Experiments were also conducted to determine the noise suppression effectiveness in comparison with a reference configuration of three passive types of devices that were located on the jet impingement surfaces of the reference configuration. These devices produced noise reductions that varied up to 10 dB at reduced separation distances. In addition, a qualitative estimate of the noise suppression characteristics of the separate devices was made. Finally static aerodynamic performance data were obtained to evaluate the penalties incurred by these suppression devices. The test results suggest that further parametric studies are required in order to understand more fully the noise mechanisms that are affected by the suppression devices used.

Mckinzie, D. J., Jr.↗

NASA NTRS1981

Investigation for single-event upset in MSI devices

The reported investigation shows that low-power TTL, standard TTL, low-power Schottky, and Schottky devices are all subject to upset by heavy ions. Low-power Schottky was the most sensitive of the device technologies tested. No evidence was found to correlate sensitivity to cosmic rays with any particular device manufacturer. The probability of upset of the logic devices is comparable to that of RAM's on a per-flip-flop basis, based on RAM data obtained by Kolasinski et al. (1979). The testing was performed by subjecting the devices to 120 MeV krypton ions from a cyclotron.

Woods, J. P.↗

NASA NTRS1982

Initial stages of cavitation damage and erosion on copper and brass tested in a rotating disk device

In view of the differences in flow and experimental conditions, there has been a continuing debate as to whether or not the ultrasonic method of producing cavitation damage is similar to the damage occurring in cavitating flow systems, namely, venturi and rotating disk devices. In this paper, the progress of cavitation damage during incubation periods on polycrystalline copper and brass tested in a rotating disk device is presented. The results indicate several similarities and differences in the damage mechanism encountered in a rotating disk device (which simulates field rotary devices) and a magnetostriction apparatus. The macroscopic erosion appears similar to that in the vibratory device except for nonuniform erosion and apparent plastic flow during the initial damage phase.

Rao, P. V.↗

NASA NTRS1982

Deep impurity trapping concepts for power semiconductor devices

High voltage semiconductor switches using deep impurity doped silicon now appear feasible for high voltage (1-100 kV), high power (10 Kw) switching and protection functions for future space power applications. Recent discoveries have demonstrated several practical ways of gating deep impurity doped silicon devices in planar configurations and of electrically controlling their characteristics, leading to a vast array of possible circuit applications. A new family of semiconductor switching devices and transducers are possible based on this technology. New deep impurity devices could be simpler than conventional p-n junction devices and yet use the same basic materials and processing techniques. In addition, multiple functions may be possible on a single device as well as increased ratings.

Sundberg, G. R.↗

NASA NTRS1982

Single event upset sensitivity of low power Schottky devices

Data taken from tests involving heavy ions in the Berkeley 88 in. cyclotron being directed at low power Schottky barrier devices are reported. The tests also included trials in the Harvard cyclotron with 130 MeV protons, and at the U.C. Davis cyclotron using 56 MeV protons. The experiments were performed to study the single event upsets in MSI logic devices containing flip-flops. Results are presented of single-event upsets (SEU) causing functional degradation observed in post-exposure tests of six different devices. The effectiveness of the particles in producing SEUs in logic device functioning was found to be directly proportional to the proton energy. Shielding was determined to offer negligible protection from the particle bombardment. The results are considered significant for the design and fabrication of LS devices for space applications.

Price, W. E.↗

NASA NTRS1984

Impacting device for testing insulation

An electro-mechanical impacting device for testing the bonding of foam insulation to metal is descirbed. The device lightly impacts foam insulation attached to metal to determine whether the insulation is properly bonded to the metal and to determine the quality of the bond. A force measuring device, preferably a load cell mounted on the impacting device, measures the force of the impact and the duration of the time the hammer head is actually in contact with the insulation. The impactor is designed in the form of a handgun having a driving spring which can propel a plunger forward to cause a hammer head to impact the insulation. The device utilizes a trigger mechanism which provides precise adjustements, allowing fireproof operation.

Redmon, J. W.↗

NASA NTRS1983

Single event upset (SEU) of semiconductor devices - A summary of JPL test data

The data summarized describe single event upset (bit-flips) for 60 device types having data storage elements. The data are from 15 acceleration tests with both protons and heavier ions. Tables are included summarizing the upset threshold data and listing the devices tested for heavy ion induced bit-flip and the devices tested with protons. With regard to the proton data, it is noted that the data are often limited to one proton energy, since the tests were usually motivated by the engineering requirement of comparing similar candidate devices for a system. It is noted that many of the devices exhibited no upset for the given test conditions (the maximum fluence and the maximum proton energy Ep are given for these cases). It is believed, however, that some possibility of upset usually exists because there is a slight chance that the recoil atom may receive up to 10 to 20 MeV of recoil energy (with more energy at higher Ep).

Nichols, D. K.↗

NASA NTRS1985

The performance of smooth-wall drag reducing outer-layer devices in rough-wall boundary layers

The boundary layer drag on a 0.28 m x 0.91 m flat-plate was measured to evaluate the performance of smooth-wall drag reducing outer-layer devices in rough-wall boundary layers up to a chord Reynolds number, Re(c) of 17,000. The devices were a pair of thin flat ribbons placed in tandem. The wall conditions examined were smooth, transverse-groove roughnesses having cavity width/depth ratios of 0.7 (d-type) and 3 (k-type), and sandpaper roughness (k-type) of grit sizes 180, 50 and 36. The area-averaged wall-drag was reduced compared to the respective normal levels for all wall conditions. All k-type rough walls exhibited a comparable level of drag reduction (about 7 percent) which was lower than that in the smooth-wall. The d-type rough-wall exhibited a transitional behavior in that the drag reduction dropped from the smooth-wall level to that of the k-type roughnesses with increase in the flow speed. In further experiments on a 6 meter long sandpaper roughened wall and with a pair of symmetric airfoil devices in tandem at an Re(c) of 77,500, it was possible to recover the device drag penalty fully, but no net drag reduction was achieved. The apparent loss of performance of the devices in a rough-wall is explained in terms of their inability to alter the pressure component of the drag in a significant way.

Bandyopadhyay, P. R.↗

NASA NTRS1985

Development and testing of tip devices for horizontal axis wind turbines

A theoretical and field experimental program has been carried out to investigate the use of tip devices on horizontal axis wind turbine rotors. The objective was to improve performance by the reduction of tip losses. While power output can always be increased by a simple radial tip extension, such a modification also results in an increased gale load both because of the extra projected area and longer moment arm. Tip devices have the potential to increase power output without such a structural penalty. A vortex lattice computer model was used to optimize three basic tip configuration types for a 25 kW stall limited commercial wind turbine. The types were a change in tip planform, and a single-element and double-element nonplanar tip extension (winglets). A complete data acquisition system was developed which recorded three wind speed components, ambient pressure, temperature, and turbine output. The system operated unattended and could perform real-time processing of the data, displaying the measured power curve as data accumulated in either a bin sort mode or polynomial curve fit. Approximately 270 hr of perormance data were collected over a three-month period. The sampling interval was 2.4 sec; thrus over 400,000 raw data points were logged. Results for each of the three new tip devices, compared with the original tip, showed a small decrease (of the order of 1 kW) in power output over the measured range of wind speeds from cut-in at about 4 m/s to over 20 m/s, well into the stall limiting region. Changes in orientation and angle-of-attack of the winglets were not made. For aircraft wing tip devices, favorable tip shapes have been reported and it is likely that the tip devices tested in this program did not improve rotor performance because they were not optimally adjusted.

Gyatt, G. W.↗

NASA NTRS1986

Theoretical and material studies on thin-film electroluminescent devices

Electroluminescent materials and device technology were assessed. The evaluation strongly suggests the need for a comprehensive theoretical and experimental study of both materials and device structures, particularly in the following areas: carrier generation and multiplication; radiative and nonradiative processes of luminescent centers; device modeling; new device concepts; and single crystal materials growth and characterization. Modeling of transport properties of hot electrons in ZnSe and the generation of device concepts were initiated.

Summers, C. J.↗

NASA NTRS1986

A class of optically controlled millimeter wave devices

Three specific devices were investigated: the sheet resistance device, the Schottky-barrier diode and the PIN diode. Several sheet resistance devices were fabricated and tested. Based on the encouraging results from these devices, a mask was designed and sent to a vendor and is expected to be received very soon. A set of masks for fabricating transparent cathode Schottky-barrier diodes was designed. These masks were given to NASA Goddard Space Flight Center for fabrication of the diodes. A mask set was designed to fabricate PIN diodes with transparent electrodes. With slight modifications, the same mask set also can be used to fabricate other devices, such as MESFET and the IMPATT diode.

Chowdhary, R.↗

NASA NTRS1987

Detection of radio-frequency modulated optical signals by two and three terminal microwave devices

An interdigitated photoconductor (two terminal device) on GaAlAs/GaAs heterostructure was fabricated and tested by an electro-optical sampling technique. Further, the photoresponse of GaAlAs/GaAs HEMT (three terminal device) was obtained by illuminating the device with an optical signal modulated up to 8 GHz. Gain-bandwidth product, response time, and noise properties of photoconductor and HEMT devices were obtained. Monolithic integration of these photodetectors with GaAs microwave devices for optically controlled phased array antenna applications is discussed.

Bhasin, K. B.↗

NASA NTRS1987

CONFIG: Qualitative simulation tool for analyzing behavior of engineering devices

To design failure management expert systems, engineers mentally analyze the effects of failures and procedures as they propagate through device configurations. CONFIG is a generic device modeling tool for use in discrete event simulation, to support such analyses. CONFIG permits graphical modeling of device configurations and qualitative specification of local operating modes of device components. Computation requirements are reduced by focussing the level of component description on operating modes and failure modes, and specifying qualitative ranges of variables relative to mode transition boundaries. Simulation processing occurs only when modes change or variables cross qualitative boundaries. Device models are built graphically, using components from libraries. Components are connected at ports by graphical relations that define data flow. The core of a component model is its state transition diagram, which specifies modes of operation and transitions among them.

Malin, Jane T.↗

NASA NTRS1988

Application of copper-carbon fiber composites to power semiconductor devices

Copper-carbon composite electrodes are used in a series of power semiconductor devices, i.e., resin molded diodes, button-type diodes, stud-type diodes, power modules, and integrated circuit igniter modules. The properties of these power semiconductor devices compare favorably with those conventional devices using Mo or W electrodes. In thermal fatigue tests, no degradation in the electrical and mechanical characteristics of these devices are observed. The new composite electrode with carbon fibers satisfies all of the major requirements for the electrodes in power semiconductor devices.

Kuniya, Keiichi↗