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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS1997

Left ventricular diastolic filling with an implantable ventricular assist device: beat to beat variability with overall improvement

OBJECTIVES: We studied the effects of left ventricular (LV) unloading by an implantable ventricular assist device on LV diastolic filling. BACKGROUND: Although many investigators have reported reliable systemic and peripheral circulatory support with implantable LV assist devices, little is known about their effect on cardiac performance. METHODS: Peak velocities of early diastolic filling, late diastolic filling, late to early filling ratio, deceleration time of early filling, diastolic filling period and atrial filling fraction were measured by intraoperative transesophageal Doppler echocardiography before and after insertion of an LV assist device in eight patients. A numerical model was developed to simulate this situation. RESULTS: Before device insertion, all patients showed either a restrictive or a monophasic transmitral flow pattern. After device insertion, transmitral flow showed rapid beat to beat variation in each patient, from abnormal relaxation to restrictive patterns. However, when the average values obtained from 10 consecutive beats were considered, overall filling was significantly normalized from baseline, with early filling velocity falling from 87 +/- 31 to 64 +/- 26 cm/s (p < 0.01) and late filling velocity rising from 8 +/- 11 to 32 +/- 23 cm/s (p < 0.05), resulting in an increase in the late to early filling ratio from 0.13 +/- 0.18 to 0.59 +/- 0.38 (p < 0.01) and a rise in the atrial filling fraction from 8 +/- 10% to 26 +/- 17% (p < 0.01). The deceleration time (from 112 +/- 40 to 160 +/- 44 ms, p < 0.05) and the filling period corrected by the RR interval (from 39 +/- 8% to 54 +/- 10%, p < 0.005) were also significantly prolonged. In the computer model, asynchronous LV assistance produced significant beat to beat variation in filling indexes, but overall a normalization of deceleration time as well as other variables. CONCLUSIONS: With LV assistance, transmitral flow showed rapidly varying patterns beat by beat in each patient, but overall diastolic filling tended to normalize with an increase of atrial contribution to the filling. Because of the variable nature of the transmitral flow pattern with the assist device, the timing of the device cycle must be considered when inferring diastolic function from transmitral flow pattern.

Non-NASA Center↗
DOE OSTI2022

Scalable Al 2 O 3 –TiO 2 Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices

Abstract Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency. Here, a simple and scalable material system of conductive oxide interfaces is employed, and their unique properties are leveraged for a new type of resistive switching device. An Al 2 O 3 –TiO 2 ‐based valence‐change resistive switching device, where the conductive oxide interface serves both as the bottom electrode and as a reservoir of defects for switching, is demonstrated. The amorphous–polycrystalline Al 2 O 3 –TiO 2 conductive interface is obtained following the technological path of simplifying the fabrication of the 2D electron gases (2DEGs), making them scalable for practical mass integration. Physical analysis of the device chemistry and microstructure with comprehensive electrical analysis of its switching behavior and performance is combined. The origin of the resistive switching is pinpointed to the conductive oxide interface, which serves both as the bottom electrode and as a reservoir of oxygen vacancies. The latter plays a key role in valence‐change resistive switching devices. The new device, based on scalable and complementary metal–oxide–semiconductor (CMOS)‐technology‐compatible fabrication processes, opens new design spaces toward increased tunability and simplification of the device selection challenge.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Influence of design and operating parameters for additively manufactured intensified packing devices on CO 2 -Absorption column cooling and capture efficiency

Solvent-based CO 2 absorption is technologically a matured CO 2 capture pathway but suffers from: high regeneration energy demand, and solvent temperature rise and decreased capture efficiency caused by the heat of reaction. While research has focused on developing non-aqueous and low-aqueous solvents for decreasing the regeneration energy, the temperature bulge due to exothermic absorption is typically dealt with by cooling the solvent with an external inter-stage heat-exchanger. This approach may increase the overall process footprint, as well as capital and operating costs. Here, the current study explores a process intensification approach by incorporating inside the column an additively manufactured intensified packing device that consists of corrugated plates and internal coolant channels. The corrugated plates provide surface area for mass transfer between gas and liquid, while cooling fluid inside the internal channels removes heat from the exothermic reactive system. Two different intensified devices with specific surface areas of 266 m 2 /m 3 and 359 m 2 /m 3 were designed, manufactured, and tested inside a 2.06-m long and 0.203-m diameter column packed with commercial Mellapak 250Y packing. The device with a lower surface area showed up to 27 % reduction in cooling performance. A steady-state heat transfer model provides good agreement with the experimental column temperature and intra-stage heat removal data. Although a decrease in heat transfer performance was observed for the device with lower surface area, CO 2 capture experiments performed with simulated flue gas and low-aqueous solvent demonstrated that both intensified devices lead to a similar improvement of 12 % in capture efficiency. This study provides an understanding on simplifying the intensified packing device geometry and decreasing the device fabrication cost by 25 % without compromising with the CO 2 absorption performance of the packed column.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Development and application of an environmental risk register for marine energy device and project developers

The marine energy industry is steadily advancing as more devices are deployed worldwide. However, several challenges and barriers remain, such as lingering uncertainty regarding the potential environmental effects of marine energy devices on marine animals, habitats, and ecosystems. Concerns have led to difficulty navigating permitting and consenting processes and receiving authorization to deploy devices in the marine environment, including extended timelines and costs. Based on existing risk registers, a novel marine energy environmental risk register was created to help the marine energy industry move beyond these barriers. This risk register aims to aid marine energy device and project developers identify and assess potential environmental risks early in device design or project planning, document and track potential environmental interactions, prioritize risks and determine risk responses, and make decisions throughout device or project development. It can also be used as a tool to assist in communicating with regulators and advisors during permitting processes and to inform stakeholder and community engagement efforts. This paper details the methods and process to develop a risk register specific to environmental effects of marine energy and describes two use cases (one for wave energy and another for tidal energy) to highlight example results. Due to the tool's novelty, the paper showcases its application for the marine energy industry and acknowledges limitations and possible future improvements. Overall, the environmental risk register shows promise to support marine energy developers when identifying, tracking, and addressing potential environmental risks and to help successfully navigate permitting and deploy marine energy devices responsibly.

Environmental effects↗
DOE OSTI2024

3D Printing of Functional Hydrogel Devices for Screenings of Membrane Permeability and Selectivity

Developing a fundamental understanding of the effects of varying ligand chemistries on mass transport rates is key to designing membranes with solute-specific selectivity. While permeation cells offer a robust method to characterize membrane performance, they are limited to assessing a single membrane chemistry or salt solution per test. As a result, investigating the effects of varying ligand chemistries on membrane performance can be a tedious process, involving both the preparation of multiple samples and numerous, time-consuming permeation tests. This study uses digital light processing (DLP) 3D printing to fabricate a millifluidic flow-based permeation device made from a hydrogel active ester network that can be easily functionalized with ion-selective ligands. Without the need for bonding or assembly steps, ligands can be introduced and tested in the permeation device by simply injecting a small volume of a ligand solution. Various salt concentrations and molecular species can be cycled through a single device by switching the solution feeding into the salt reservoir, thereby reducing the number of samples needed for permeability and selectivity screenings. This research sets the groundwork for formulation development and postprocessing methods to 3D-print functional millifluidic devices capable of assessing solute selectivity in membranes and polymer adsorbents for aqueous separations. In this work, comparable salt permeability trends were observed with both 3D-printed devices and traditional assays. Devices were functionalized with an imidazole ligand to investigate salt permeability and selectivity of monovalent and divalent salts. Measurements showed increasing permeability for monovalent salts (NaCl) relative to divalent salts (MgCl 2 , CuCl 2 ) in functionalized membranes, with higher monovalent/divalent selectivity at increasing imidazole grafting densities. Here, the methods and findings described here represent a step toward developing higher-throughput methods with 3D-printed devices for screening the effects of ligand chemistry on mass transport rates in membrane materials.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Redox-Active Polymers Designed for the Circular Economy of Energy Storage Devices

Electrochemical energy storage is a keystone to support the rapid transition to a low-carbon-emission future for grid storage and transportation. While research on electrochemical energy storage devices has mostly dealt with performance improvements (energy density and power density), little attention has been paid to designing devices that can be recycled with low cost and low environmental impact. Thus, next-generation energy storage devices should also address the integration of recyclability into the device design. In this study, we demonstrate recyclable energy storage devices based on solution-processable redox-active conjugated polymers. The high electronic and ionic charge transport in these polymers enables the operation of single-phase electrodes in aqueous electrolytes with C-rates >100 with good electrochemical stability when the cell is charged to 1.2 V. Finally, we demonstrate the recyclability of these devices, achieving >85% capacity retention in each recycling step. Our work provides a framework for developing recyclable devices for sustainable energy storage technologies.

25 ENERGY STORAGE↗
DOE OSTI2024

Aerosol jet printing of surface acoustic wave microfluidic devices

Abstract The addition of surface acoustic wave (SAW) technologies to microfluidics has greatly advanced lab-on-a-chip applications due to their unique and powerful attributes, including high-precision manipulation, versatility, integrability, biocompatibility, contactless nature, and rapid actuation. However, the development of SAW microfluidic devices is limited by complex and time-consuming micro/nanofabrication techniques and access to cleanroom facilities for multistep photolithography and vacuum-based processing. To simplify the fabrication of SAW microfluidic devices with customizable dimensions and functions, we utilized the additive manufacturing technique of aerosol jet printing. We successfully fabricated customized SAW microfluidic devices of varying materials, including silver nanowires, graphene, and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS). To characterize and compare the acoustic actuation performance of these aerosol jet printed SAW microfluidic devices with their cleanroom-fabricated counterparts, the wave displacements and resonant frequencies of the different fabricated devices were directly measured through scanning laser Doppler vibrometry. Finally, to exhibit the capability of the aerosol jet printed devices for lab-on-a-chip applications, we successfully conducted acoustic streaming and particle concentration experiments. Overall, we demonstrated a novel solution-based, direct-write, single-step, cleanroom-free additive manufacturing technique to rapidly develop SAW microfluidic devices that shows viability for applications in the fields of biology, chemistry, engineering, and medicine.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Molecular coupling competing with defects within insulator of the magnetic tunnel junction-based molecular spintronics devices

Nearly 70 years old dream of incorporating molecule as the device element is still challenged by competing defects in almost every experimentally tested molecular device approach. This paper focuses on the magnetic tunnel junction (MTJ) based molecular spintronics device (MTJMSD) method. An MTJMSD utilizes a tunnel barrier to ensure a robust and mass-producible physical gap between two ferromagnetic electrodes. MTJMSD approach may benefit from MTJ's industrial practices; however, the MTJMSD approach still needs to overcome additional challenges arising from the inclusion of magnetic molecules in conjunction with competing defects. Molecular device channels are covalently bonded between two ferromagnets across the insulating barrier. An insulating barrier may possess a variety of potential defects arising during the fabrication or operational phase. This paper describes an experimental and theoretical study of molecular coupling between ferromagnets in the presence of the competing coupling via an insulating tunnel barrier. We discuss the experimental observations of hillocks and pinhole-type defects producing inter-layer coupling that compete with molecular device elements. We performed theoretical simulations to encompass a wide range of competition between molecules and defects. Monte Carlo Simulation (MCS) was used for investigating the defect-induced inter-layer coupling on MTJMSD. Our research may help understand and design molecular spintronics devices utilizing various insulating spacers such as aluminum oxide (AlOx) and magnesium oxide (MgO) on a wide range of metal electrodes. This paper intends to provide practical insights for researchers intending to investigate the molecular device properties via the MTJMSD approach and do not have a background in magnetic tunnel junction fabrication.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Printing thermoelectric inks toward next-generation energy and thermal devices

The ability of thermoelectric (TE) materials to convert thermal energy to electricity and vice versa highlights them as a promising candidate for sustainable energy applications. Despite considerable increases in the figure of merit zT of thermoelectric materials in the past two decades, there is still a prominent need to develop scalable synthesis and flexible manufacturing processes to convert high-efficiency materials into high-performance devices. Scalable printing techniques provide a versatile solution to not only fabricate both inorganic and organic TE materials with fine control over the compositions and microstructures, but also manufacture thermoelectric devices with optimized geometric and structural designs that lead to improved efficiency and system-level performances. In this review, we aim to provide a comprehensive framework of printing thermoelectric materials and devices by including recent breakthroughs and relevant discussions on TE materials chemistry, ink formulation, flexible or conformable device design, and processing strategies, with an emphasis on additive manufacturing techniques. Additionally, we review recent innovations in the flexible, conformal, and stretchable device architectures and highlight state-of-the-art applications of these TE devices in energy harvesting and thermal management. Perspectives of emerging research opportunities and future directions are also discussed. While this review centers on thermoelectrics, the fundamental ink chemistry and printing processes possess the potential for applications to a broad range of energy, thermal and electronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Domain wall-magnetic tunnel junction spin–orbit torque devices and circuits for in-memory computing

There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation. Magnetic tunnel junction memory elements can be used for computation by manipulating a domain wall, a transition region between magnetic domains, but the experimental study of such devices has been limited by high current densities and low tunnel magnetoresistance. Here, we study prototypes of three-terminal domain wall-magnetic tunnel junction in-memory computing devices that can address data processing bottlenecks and resolve these challenges by using perpendicular magnetic anisotropy, spin–orbit torque switching, and an optimized lithography process to produce average device tunnel magnetoresistance TMR = 171% and average resistance-area product RA = 29 Ω μm2, close to the RA of the unpatterned film. Device initialization variation in switching voltage is shown to be curtailed to 7%–10% by controlling the domain wall initial position, which we show corresponds to 90%–96% accuracy in a domain wall-magnetic tunnel junction full adder simulation. Repeatability of writing and resetting the device is shown. A circuit shows an inverter operation between two devices, showing that a voltage window is large enough, compared to the variation noise, to repeatably operate a domain wall-magnetic tunnel junction circuit. These results make strides in using magnetic tunnel junctions and domain walls for in-memory and neuromorphic computing applications.

Alamdar, Mahshid (ORCID:0000000221732935)↗
DOE OSTI2022

Electric current paths in a Si:P delta-doped device imaged by nitrogen-vacancy diamond magnetic microscopy

The recently-developed ability to control phosphorous-doping of silicon at an atomic level using scanning tunneling microscopy, a technique known as atomic precision advanced manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics. In these applications, critical questions include where current flow is actually occurring in or near APAM structures as well as whether leakage currents are present. In general, detection and mapping of current flow in APAM structures are valuable diagnostic tools to obtain reliable devices in digital-enhanced applications. In this report, we used nitrogen-vacancy (NV) centers in diamond for wide-field magnetic imaging (with a few-mm field of view and micron-scale resolution) of magnetic fields from surface currents flowing in an APAM test device made of a P delta-doped layer on a Si substrate, a standard APAM witness material. We integrated a diamond having a surface NV ensemble with the device (patterned in two parallel mm-sized ribbons), then mapped the magnetic field from the DC current injected in the APAM device in a home-built NV wide-field microscope. The 2D magnetic field maps were used to reconstruct the surface current densities, allowing us to obtain information on current paths, device failures such as choke points where current flow is impeded, and current leakages outside the APAM-defined P-doped regions. Analysis on the current density reconstructed map showed a projected sensitivity of ~0.03 A m -1 , corresponding to a smallest-detectable current in the 200 μm wide APAM ribbon of ~6 μA. These results demonstrate the failure analysis capability of NV wide-field magnetometry for APAM materials, opening the possibility to investigate other cutting-edge microelectronic devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Vulnerability Studies Under EMP: Impedance and PCI Testing of the Grid Control Devices

Control devices such as inverters and generator controllers are critical for the stable operation of the power grid, especially for power stability control and power dispatch. However, the Electromagnetic Pulse (EMP) is a potential threat to electronic devices in modern power grids, therefore decreasing the power grid resilience and bringing unrecoverable damages to the devices. To reveal the impact mechanism of the EMP, impedance and Pulse Current Injection (PCI) testing is established to study the vulnerability of the grid control devices. The impedance of the grid control devices is accurately measured using impedance analyzers with different frequency ranges. Then the voltage and current responses are tested based on the PCI testing. The vulnerability experiments based on two grid control devices are carried out. And the comparison results reveal that most ports would be damaged under EC8, and some ports can survive under EC5 according to the calculated PCI response and cumulative energy. The results can provide a reference for the future design of control devices and the strategic resilience of power grids.

Qiu, Wei↗
DOE OSTI2021

Sampling on NISQ Devices: "Who’s the Fairest One of All?"

Modern NISQ devices are subject to a variety of biases and sources of noise that degrade the solution quality of computations carried out on these devices. A natural question that arises in the NISQ era, is how fairly do these devices sample ground state solutions. To this end, we run five fair sampling problems (each with at least three ground state solutions) that are based both on quantum annealing and, on the Grover Mixer, -QAOA algorithm for gate-based NISQ hardware. In particular, we use seven IBM Q devices, the Aspen-9 Rigetti device, the IonQ device, and three D-Wave quantum annealers. For each of the fair sampling problems, we measure the ground state probability, the relative fairness of the frequency of each ground state solution with respect to the other ground state solutions, and the aggregate error as given by each hardware provider. Overall, our results show that NISQ devices do not achieve fair sampling yet. Furthermore, we also observe differences in the software stack with a particular focus on compilation techniques that illustrate what work will still need to be done to achieve a seamless integration of frontend (i.e., quantum circuit description) and backend compilation.

Computer Science↗
DOE OSTI2020

Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics

Researchers have been extensively studying wide-bandgap (WBG) semiconductor materials such as gallium nitride (GaN) with an aim to accomplish an improvement in size, weight, and power of power electronics beyond current devices based on silicon (Si). However, the increased operating power densities and reduced areal footprints of WBG device technologies result in significant levels of self-heating that can ultimately restrict device operation through performance degradation, reliability issues, and failure. Typically, self-heating in WBG devices is studied using a single measurement technique while operating the device under steady-state direct current measurement conditions. However, for switching applications, this steady-state thermal characterization may lose significance since the high power dissipation occurs during fast transient switching events. Therefore, it can be useful to probe the WBG devices under transient measurement conditions in order to better understand the thermal dynamics of these systems in practical applications. In this work, the transient thermal dynamics of an AlGaN/GaN high electron mobility transistor (HEMT) were studied using thermoreflectance thermal imaging and Raman thermometry. Also, the proper use of iterative pulsed measurement schemes such as thermoreflectance thermal imaging to determine the steady-state operating temperature of devices is discussed. These studies are followed with subsequent transient thermal characterization to accurately probe the self-heating from steady-state down to submicrosecond pulse conditions using both thermoreflectance thermal imaging and Raman thermometry with temporal resolutions down to 15 ns.

42 ENGINEERING↗
DOE OSTI2025

Eye-Safe 1.5 and 2.0 Micron Laser Power Conversion Using Metamorphic InGaAs Photovoltaic Devices

Laser power transmission at 1.5 and 2.0 microns are considered eye-safe up to 0.1 W/cm2 irradiance. Further, the atmospheric bands at these two wavelengths may provide the highest optical transmission through the atmosphere in hazy conditions. By slowly changing the lattice-constant of InGaAs with a Compositionally Graded Buffer (CGB), we have fabricated InGaAs photovoltaic (PV) devices over a wide range of bandgaps useful for multijunction concentrating photovoltaic devices, thermophotovoltaic devices, and Laser Power Converters (LPC). Here, we have demonstrated monochromatic power conversion of 1.5-micron light with an eye-safe efficiency of 39.8% at 0.1 W/cm2 with InGaAs devices lattice-matched to InP with an Antireflection Coating (ARC). We have also demonstrated 30.2% and 24.5% eye-safe LPC efficiency of metamorphic InGaAs devices grown on GaAs substrates using GaInP and AlGaAsP CGBs, respectively. Finally, we have demonstrated metamorphic InGaAs devices grown on InP and GaAs substrates that are estimated to have eye-safe LPC efficiencies at 2.0 microns of 27.4% and 20.9% respectively. The efficiencies of all these LPC devices continues to increase up to about 30-70 times the eye-safe irradiance.

eye-safe↗
DOE OSTI2020

Engineering of Lead Selenide Quantum Dot Based Devices and Core/Shell Heterostructures

Near infrared (NIR) emitting colloidal quantum dots (QDs) such as PbSe are interesting materials for implementation in various optoelectronic devices such as solar cells, photodetectors, and radiation detectors. Material properties like size tunable emission wavelengths, facile solution processability, the possibility of carrier multiplication and Auger assisted up-conversion, and high Z number provide PbSe QDs with unique advantages over many currently available commercial materials used in these devices. In this dissertation, after an introduction to QDs in general, we first focus on synthesis of PbSe-based heterostructured QDs for study via optical spectroscopy. PbSe/CdSe QDs synthesized via cation exchange reaction were used as seeds to study the proper conditions for further CdSe or CdS shell growth. Optical spectroscopy studies show that growth of thicker CdSe shells leads to tunable visible emission, while growth of thick CdS shells can greatly increase the photoluminescence quantum yield (PLQY) observed from the intermediate CdSe shell. NIR PL lifetimes can be greatly enhanced by the growth of CdS shells, due to strong delocalization of the hole wavefunction within the PbSe core, while the electron is delocalized throughout the QD including in the CdS shell, resulting in radiative lifetimes in the tens of microseconds. Two pulse delay measurements show that Auger assisted up conversion is also taking place in these engineered QD dot heterostructures. In the sections that follow, we look at QD devices, first with a focus on novel devices fabricated from PbSe QDs, using an amine synthesis method that allows for facile in-solution ligand exchange. QD film mobilities are measured for PbSe QDs capped with various short ionic ligands. Carrier densities in PbSe QD films are calculated from C-V measurements, showing for the first time that carrier densities can be modulated by simply changing the capping ligand. vii Radiation detectors utilizing PbSe QDs capped with KI and NH4I ligands show tangible response to incident alpha radiation. Current output response to alpha radiation is dependent on strength of radiation source and amount of bias voltage applied. In the final section a critical review of hybrid layered 2D-QD photodetectors is presented. In a typical example, PbSe and PbS QDs act as the absorbing layer in phototransistor devices which utilize layered 2D materials such as graphene and transition metal dichalcogenides as transport layers. Resulting devices display high gains and improved directivities compared to QD only and 2D only devices.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Rapid Patterning and Advanced Device Structures for Low Cost Manufacturable Crystalline Si IBC Cells

Recent record efficiency Si cells have had an interdigitated back contact (IBC) design where both positive and negative contacts are fabricated on the back side of the Si wafer. Many industry groups have investigated IBC cells but used photolithography to pattern the rear contacts although it is considered impractical for low cost, high volume manufacturing. Alternative patterning methods using lasers and mechanical masking have been utilized in fabrication of patterned regions in IBC Si solar cells to replace photolithography. Another exciting advance in Si solar cell technology has been replacing the high temperature diffusion of doped regions inside the crystalline Si wafer with low temperature deposition of very thin layers of doped amorphous hydrogenated Si (a-Si:H) on the Si wafer. This is called a Si heterojunction (HJ) device. The a-Si:H provides excellent passivation of surface defects and has produced the highest open circuit voltages (VOC) of any Si solar cell device structure. The Institute of Energy Conversion (IEC) demonstrated the first IBC-HJ solar cell combining these two strategies in 2007 and has fabricated IBC-HJ cells with 20% efficiency using three photolithography steps. Despite the demonstrated efficiency potential of this device by industry groups (>26%) there is no commercial production because of the challenges of patterning and processing the structure in an industrial environment. Our work sought to address that challenge. The objective of this 3 year project was to develop the processing for the IBC-HJ Si solar cell using lasers for patterning and contact formation instead of photolithography. Laser patterning enables rapid, contactless manufacturing of patterned regions. We intensively studied laser fired contacts, laser patterning of the a-Si multi-layer stacks and metal layers and the use of plasma shadow masks. After an exhaustive focus in the first year on the laser fired emitter (LFE) and contact (LFC), we were unable to achieve VOC greater than 660 mV, compared to the 720 mV required to meet our milestones. We discovered that an additional issue with our original IBC structure was the presence of an inversion layer at the back surface connecting the p and n regions which reduced the VOC and fill factor (FF). We developed innovative methods for characterizing the inversion layer. These two limitations in the original design lead to development of a new IBC-HJ process sequence and device structure which we called Plasma Masked Laser Processed (PMLP). It retained the original high efficiency features including manufacturability. The LFC was replaced with a standard n-type a-Si HJ contact. The inversion layer was eliminated by replacing the previous p-type stack in the gap with an n-type or SiN stack. The PMLP used laser ablation of a multi-layer a-Si stack followed by chemical etching to open the n-contact. It required deposition of a patterned stack through a mask in the plasma deposition chamber. This turned out to be a source of significant problems due to inevitable unwanted deposition ‘leakage’ under the mask. This formed a blocking contact on the emitter which significantly reduced Voc and FF. Several iterations in PMLP device structure and chemical etching steps resulted in a large improvements, e.g. the efficiency increasing from 3 to 15% and Voc from 450 to 660 mV but they were unable to completely eliminate it. The best IBC-HJ device we fabricated had only 15% efficiency. For perspective, our standard FHJ devices had 20% efficiency.

14 SOLAR ENERGY↗
DOE OSTI2022

Assessment of the Electrical Substation-Grid Testbed with Inside/Outside Devices and Distributed Ledger Technology

The electrical substation-grid testbed was created to integrate the GOOSE and/or DNP (Distributed Network Protocol) messages with time synchronized sources and Distributed Ledger Technology (DLT). The objective was to study the impact of faults and cyber-events at an electrical substation with inside (protective relays) and outside (power meters) substation devices. The electrical substation-grid testbed was based on the design of a 34.5/ 12.47 kV electrical substation (sectionalized bus configuration) with two power transformers, connected to radial power lines and load feeders. The electrical substation-grid testbed was installed at 252 lab space (Advanced Power System Protection), Grid Research Integration and Deployment Center (GRID-C), Oak Ridge National Laboratory. This testbed was created for Task 5, DarkNet project. The electrical substation-grid testbed was created to simulate fault and/or cyber events that could potentially result in damage to the electrical infrastructure. In addition, tests were run that are usually not allowed to be performed in an operational electrical power grid, because these test scenarios could trip breakers and/or generate fault situations that could potentially damage equipment. The number of tests performed in the electrical substation-grid testbed were executed in a better way than in a real electrical substation and/or power grid, because multiple tests could be run in a short period of time, and complex permits, and safety/ schedule restrictions like in a real electrical substation environment were not needed. The electrical substation-grid testbed was created using real measurement, communication, and protection devices that are used by electrical utilities, to have same conditions that we could observe in a real power grid or electrical substation. The electrical substation-grid testbed was based on using a real time simulator and expansion box with amplifiers that were wired to electrical substation-grid devices. This hardware-in-the-loop (HIL) was provided by protective relays, power meters, ethernet switches, remote terminal units, synchronized timing network clock, DLT devices, workstations, and servers. This report includes the design, installation, and assessment of the electrical substation-grid testbed that was similar to an operational electrical substation, integrating the power system protection, communication, and control systems. The results for the electrical substation-grid testbed were based on:• verifying the analog signals for protective relays and power meters, • observing the synchronized time source frame at devices, • authenticating the GOOSE (IEC 61850) and DNP messages from power meters and protective relays, and • verifying the trip conditions of protective relays at fault tests with the power system fault event detection, using DLT devices. For future work, the electrical substation-grid testbed with protective relays and power meters, using DLT and synchronized time source from DarkNet, will be used to study the impact of cyber-events at inside and outside substation devices. Advanced algorithms for detecting cyber-events produced by non-desired protective relay settings will be studied, to improve the detection and reliability of protection, control, and communication systems at power grids.

24 POWER TRANSMISSION AND DISTRIBUTION↗