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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Ion velocities in direct current arc plasma generated from compound cathodes

Arc plasma from Ti-C, Ti-Al, and Ti-Si cathodes was characterized with respect to charge-state-resolved ion energy. The evaluated peak velocities of different ion species in plasma generated from a compound cathode were found to be equal and independent on ion mass. Therefore, measured difference in kinetic energies can be inferred from the difference in ion mass, with no dependence on ion charge state. The latter is consistent with previous work. These findings can be explained by plasma quasineutrality, ion acceleration by pressure gradients, and electron-ion coupling. Increasing the C concentration in Ti-C cathodes resulted in increasing average and peak ion energies for all ion species. This effect can be explained by the “cohesive energy rule,” where material and phases of higher cohesive energy generally result in increasing energies (velocities). This is also consistent with the here obtained peak velocities around 1.37, 1.42, and 1.55 (10{sup 4} m/s) for ions from Ti{sub 0.84}Al{sub 0.16}, Ti{sub 0.90}Si{sub 0.10}, and Ti{sub 0.90}C{sub 0.10} cathodes, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Characterization of direct current He-N{sub 2} mixture plasma using optical emission spectroscopy and mass spectrometry

This study analyses the glow discharge of He and N{sub 2} mixture at the pressure of 2.0 Torr, power of 10 W, and flow rate of 16.5 l/min, by using optical emission spectroscopy and mass spectrometry. The emission bands were measured in the wavelength range of 200–1100 nm. The principal species observed were N{sub 2}{sup +} (B{sup 2}Σ{sup +}{sub u}→X{sup 2}Σ{sup +}{sub g}), N{sub 2} (C{sup 3}Π{sub u}→B{sup 3}Π{sub g}), and He, which are in good agreement with the results of mass spectrometry. Besides, the electron temperature and ion density were determined by using a double Langmuir probe. Results indicate that the electron temperature is in the range of 1.55–2.93 eV, and the electron concentration is of the order of 10{sup 10} cm{sup −3}. The experimental results of electron temperature and ion density for pure N{sub 2} and pure He are in good agreement with the values reported in the literature.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

The impact of argon admixture on the c-axis oriented growth of direct current magnetron sputtered Sc{sub x}Al{sub 1−x}N thin films

The piezoelectric properties of wurtzite aluminium nitride (w-AlN) are enhanced by alloying with scandium (Sc), thus offering superior properties for applications in micro electro-mechanical systems devices. Sc{sub x}Al{sub 1−x}N thin films have been prepared by DC reactive magnetron sputtering on Si (100) substrates from a single target. When targeting a concentration range from x = 0 up to x = 0.15, the preparation conditions have been optimized by varying the Ar/N{sub 2} ratio in the sputtering gas. To incorporate an increasing Sc concentration, a higher Ar/N{sub 2} ratio has to be applied during the deposition process. Hence, the argon concentration in the sputtering gas becomes a crucial parameter for microstructure-related parameters. To determine phase purity, degree of c-axis orientation, lattice parameter, and grain size, the Sc{sub x}Al{sub 1−x}N thin films were investigated by techniques, such as scanning electron microscopy, transmission electron microscopy, and X-ray diffraction.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Magnetic properties of in-plane oriented barium hexaferrite thin films prepared by direct current magnetron sputtering

In-plane c-axis oriented Ba-hexaferrite (BaM) thin films were prepared on a-plane (112{sup ¯}0) sapphire (Al{sub 2}O{sub 3}) substrates by DC magnetron sputtering followed by ex-situ annealing. The DC magnetron sputtering was demonstrated to have obvious advantages over the traditionally used RF magnetron sputtering in sputtering rate and operation simplicity. The sputtering power had a remarkable influence on the Ba/Fe ratio, the hematite secondary phase, and the grain morphology of the as-prepared BaM films. Under 80 W of sputtering power, in-plane c-axis highly oriented BaM films were obtained. These films had strong magnetic anisotropy with high hysteresis loop squareness (M{sub r}/M{sub s} of 0.96) along the in-plane easy axis and low M{sub r}/M{sub s} of 0.03 along the in-plane hard axis. X-ray diffraction patterns and pole figures revealed that the oriented BaM films grew via an epitaxy-like growth process with the crystallographic relationship BaM (101{sup ¯}0)//α-Fe{sub 2}O{sub 3}(112{sup ¯}0)//Al{sub 2}O{sub 3}(112{sup ¯}0)

36 MATERIALS SCIENCE↗
DOE OSTI2013

Plasma nitriding process by direct current glow discharge at low temperature increasing the thermal diffusivity of AISI 304 stainless steel

This work reports for the first time on the use of the open photoacoustic cell technique operating at very low frequencies and at room temperature to experimentally determine the thermal diffusivity parameter of commercial AISI304 stainless steel and AISI304 stainless steel nitrided samples. Complementary measurements of X-ray diffraction and scanning electron microscopy were also performed. The results show that in standard AISI 304 stainless steel samples the thermal diffusivity is (4.0 {+-} 0.3) Multiplication-Sign 10{sup -6} m{sup 2}/s. After the nitriding process, the thermal diffusivity increases to the value (7.1 {+-} 0.5) Multiplication-Sign 10{sup -6} m{sup 2}/s. The results are being associated to the diffusion process of nitrogen into the surface of the sample. Carrying out subsequent thermal treatment at 500 Degree-Sign C, the thermal diffusivity increases up to (12.0 {+-} 2) Multiplication-Sign 10{sup -6} m{sup 2}/s. Now the observed growing in the thermal diffusivity must be related to the change in the phases contained in the nitrided layer.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Mechanism of direct current electrical charge conduction in p-toluenesulfonate doped polypyrrole/carbon composites

Polypyrrole/carbon (PPy/C) composites have been synthesized using varying concentration of p-toluenesulfonate (pTS) dopant by surface initiated in-situ chemical oxidative polymerization. The synthesis and influence of pTS on the structure of the PPy/C composites are confirmed by Fourier transform infrared studies and the morphological features have been examined by scanning electron microscopy. X-ray photoelectron spectroscopy, employed to examine the surface composition and doping level of these composites, confirms the anionic doping into the polymer backbone. Electron spin resonance measurement has been carried out on these samples to identify the nature of the charge carriers and their concentration at different doping levels. The dc electrical conductivity of these composites has been measured in the temperature range ∼10–305 K. The observed results have been analyzed in the framework of existing theoretical models. Different Mott's parameters, such as characteristic temperature (T{sub 0}), density of states at the Fermi level (N(E{sub F})), average hopping distance (R), and average hopping energy (W), evaluated from dc conductivity data supports the applicability of Mott's three dimensional variable range hopping mechanism in this system.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Terahertz and direct current losses and the origin of non-Drude terahertz conductivity in the crystalline states of phase change materials

THz and DC losses in crystalline states of GeSbTe and AgInSbTe phase-change material systems are re-examined and discussed. Although a simple free carrier transport has been assumed so far in the GeSbTe (GST) system, it is shown through recent experimental results that a series sequence of intragrain and intergrain (tunneling) transport, as recently formulated in Shimakawa et al., “The origin of non-Drude terahertz conductivity in nanomaterials,” Appl. Phys. Lett. 100, 132102 (2012) may dominate the electronic transport in the commercially utilized GST system, producing a non-Drude THz conductivity. The extracted physical parameters such as the free-carrier density and mobility are significantly different from those obtained from the Drude law. These physical parameters are consistent with those obtained from the DC loss data, and provide further support for the model. Negative temperature coefficient of resistivity is found even in the metallic state, similar to amorphous metals, when the mean free path is short. It is shown that the concept of minimum metallic conductivity, often used in the metal-insulator transition, cannot be applied to electronic transport in these materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Growth of tungsten nanoparticles in direct-current argon glow discharges

The growth of nanoparticles from the sputtering of a tungsten cathode in DC argon glow discharges is reported. The study was performed at fixed argon pressure and constant discharge current. The growth by successive agglomerations is evidenced. First, tungsten nanocrystallites agglomerate into primary particles, the most probable size of which being {approx}30 nm. Primary particles of this size are observed for all plasma durations and always remain the most numerous in the discharge. Primary particles quickly agglomerate to form particles with size up to {approx}150 nm. For short plasma duration, log-normal functions describe accurately the dust particle size distributions. On the contrary, for long discharge durations, a second hump appears in the distributions toward large particle sizes. In the meantime, the discharge voltage, electron density, and emission line intensities strongly evolve. Their evolutions can be divided in four separate phases and exhibit unusual distinctive features compared to earlier observations in discharges in which particles were growing. The evolution of the different parameters is explained by a competition between the surface state of the tungsten cathode and the influence of the growing nanoparticles. The differences with sputtering glow discharges and chemically active plasmas suggest that the nanoparticle growth and its influence on discharge parameters is system and material dependent.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

The production mechanisms of OH radicals in a pulsed direct current plasma jet

The production mechanism of OH radicals in a pulsed DC plasma jet is studied by a two-dimensional (2-D) plasma jet model and a one-dimensional (1-D) discharge model. For the plasma jet in the open air, electron-impact dissociation of H{sub 2}O, electron neutralization of H{sub 2}O{sup +}, as well as dissociation of H{sub 2}O by O(1D) are found to be the main reactions to generate the OH species. The contribution of the dissociation of H{sub 2}O by electron is more than the others. The additions of N{sub 2}, O{sub 2}, air, and H{sub 2}O into the working gas increase the OH density outside the tube slightly, which is attributed to more electrons produced by Penning ionization. On the other hand, the additions of O{sub 2} and H{sub 2}O into the working gas increase the OH density inside the tube substantially, which is attributed to the increased O (1D) and H{sub 2}O concentration, respectively. The gas flow will transport high density OH out of the tube during pulse off period. It is also shown that the plasma chemistry and reactivity can be effectively controlled by the pulse numbers. These results are supported by the laser induced fluorescence measurements and are relevant to several applications of atmospheric-pressure plasmas in health care, medicine, and materials processing.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2013

Particle-in-cell simulation of an electronegative plasma under direct current bias studied in a large range of electronegativity

A one-dimensional electronegative plasma situated between two symmetrical parallel electrodes under DC bias is studied by Particle-In-Cell simulation with Monte Carlo Collisions. By varying the electronegativity {alpha}{identical_to}n{sub -}/n{sub e} from the limit of electron-ion plasmas (negative ion free) to ion-ion plasmas (electron free), the sheaths formation, the negative ion flux flowing towards the electrodes, and the particle velocities at the sheath edges are investigated. Depending on {alpha}, it is shown that the electronegative plasma behavior can be described by four regimes. In the lowest regime of {alpha}, i.e., {alpha} < 50, negative ions are confined by two positive sheaths within the plasma, while in the higher regimes of {alpha}, a negative sheath is formed and the negative ion flux can be extracted from the bulk plasma. In the two intermediate regimes of {alpha}, i.e., 50 < {alpha} < 10{sup 5}, both the electron and the negative ion fluxes are involved in the neutralization of the positive ions flux that leaves the plasma. In particular, we show that the velocity of the negative ions entering the negative sheath is affected by the presence of the electrons, and is not given by the modified Bohm velocity generally accepted for electronegative plasmas. For extremely high electronegativity, i.e., {alpha} > 10{sup 5}, the presence of electrons in the plasma is marginal and the electronegative plasma can be considered as an ion-ion plasma (electron free).

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Pulsing frequency induced change in optical constants and dispersion energy parameters of WO{sub 3} films grown by pulsed direct current magnetron sputtering

In this work, we present the pulsing frequency induced change in the structural, optical, vibrational, and luminescence properties of tungsten oxide (WO{sub 3}) thin films deposited on microscopic glass and fluorine doped tin oxide (SnO{sub 2}:F) coated glass substrates by pulsed dc magnetron sputtering technique. The WO{sub 3} films deposited on SnO{sub 2}:F substrate belongs to monoclinic phase. The pulsing frequency has a significant influence on the preferred orientation and crystallinity of WO{sub 3} film. The maximum optical transmittance of 85% was observed for the film and the slight shift in transmission threshold towards higher wavelength region with increasing pulsing frequency revealed the systematic reduction in optical energy band gap (3.78 to 3.13 eV) of the films. The refractive index (n) of films are found to decrease (1.832 to 1.333 at 550 nm) with increasing pulsing frequency and the average value of extinction coefficient (k) is in the order of 10{sup −3}. It was observed that the dispersion data obeyed the single oscillator of the Wemple-Didomenico model, from which the dispersion energy (E{sub d}) parameters, dielectric constants, plasma frequency, oscillator strength, and oscillator energy (E{sub o}) of WO{sub 3} films were calculated and reported for the first time due to variation in pulsing frequency during deposition by pulsed dc magnetron sputtering. The E{sub o} is change between 6.30 and 3.88 eV, while the E{sub d} varies from 25.81 to 7.88 eV, with pulsing frequency. The Raman peak observed at 1095 cm{sup −1} attributes the presence of W-O symmetric stretching vibration. The slight shift in photoluminescence band is attributed to the difference in excitons transition. We have made an attempt to discuss and correlate these results with the light of possible mechanisms underlying the phenomena.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Microstructural evolution of thin film vanadium oxide prepared by pulsed-direct current magnetron sputtering

Vanadium oxide (VO{sub x}) thin films have been deposited by pulsed-DC magnetron sputtering using a metallic vanadium target in a reactive argon and oxygen environment. While the process parameters (power, total pressure, oxygen-to-argon ratio) remained constant, the deposition time was varied to produce films between 75 {+-} 6 and 2901 {+-} 30 A thick, which were then optically and electrically characterized. The complex dielectric function spectra ({epsilon} = {epsilon}{sub 1} + i{epsilon}{sub 2}) of the films from 0.75 to 5.15 eV were extracted by ex situ, multiple-angle spectroscopic ellipsometry (SE) measurements for the series of varied thickness VO{sub x} samples. Significant changes in {epsilon} and resistivity occur as a function of thickness, indicating the correlations exist between the electrical and the optical properties over this spectral range. In addition, in situ measurements via real time SE (RTSE) were made on the film grown to the largest thickness to track optical property and structural variations during growth. RTSE was also used to characterize changes in the film occurring after growth was completed, namely during post sputtering in the presence of argon and oxygen while the sample is shielded, and atmospheric exposure. RTSE indicates that the exposure of the film to the argon and oxygen environment, regardless of the shutter isolating the target, causes up to 200 A of the top surface of the deposited film to become more electrically resistive as evidenced by variations in {epsilon}. Exposure of the VO{sub x} thin film to atmospheric conditions introduces a similar change in {epsilon}, but this change occurs throughout the bulk of the film. A combination of these observations with RTSE results indicates that thinner, less ordered VO{sub x} films are more susceptible to drastic changes due to atmospheric exposure and that microstructural variations in this material ultimately control its environmental stability.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Effect of Ti-Al cathode composition on plasma generation and plasma transport in direct current vacuum arc

DC arc plasma from Ti, Al, and Ti{sub 1-x}Al{sub x} (x = 0.16, 0.25, 0.50, and 0.70) compound cathodes was characterized with respect to plasma chemistry and charge-state-resolved ion energy. Scanning electron microscopy, X-ray diffraction, and Energy-dispersive X-ray spectroscopy of the deposited films and the cathode surfaces were used for exploring the correlation between cathode-, plasma-, and film composition. Experimental work was performed at a base pressure of 10{sup −6} Torr, to exclude plasma-gas interaction. The plasma ion composition showed a reduction of Al of approximately 5 at. % compared to the cathode composition, while deposited films were in accordance with the cathode stoichiometry. This may be explained by presence of neutrals in the plasma/vapour phase. The average ion charge states (Ti = 2.2, Al = 1.65) were consistent with reference data for elemental cathodes, and approximately independent on the cathode composition. On the contrary, the width of the ion energy distributions (IEDs) were drastically reduced when comparing the elemental Ti and Al cathodes with Ti{sub 0.5}Al{sub 0.5}, going from ∼150 and ∼175 eV to ∼100 and ∼75 eV for Ti and Al ions, respectively. This may be explained by a reduction in electron temperature, commonly associated with the high energy tail of the IED. The average Ti and Al ion energies ranged between ∼50 and ∼61 eV, and ∼30 and ∼50 eV, respectively, for different cathode compositions. The attained energy trends were explained by the velocity rule for compound cathodes, which states that the most likely velocities of ions of different mass are equal. Hence, compared to elemental cathodes, the faster Al ions will be decelerated, and the slower Ti ions will be accelerated when originating from compound cathodes. The intensity of the macroparticle generation and thickness of the deposited films were also found to be dependent on the cathode composition. The presented results may be of importance for choice of cathodes for thin film depositions involving compound cathodes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1993

Direct-Current Monitor With Flux-Reset Transformer Coupling

Circuit measures constant or slowly-varying unidirectional electrical current using flux-reset transformer coupling. Measurement nonintrusive in sense that no need for direct contact with wire that carries load current to be measured, and no need to install series resistive element in load-current path. Toroidal magnetic core wrapped with coil of wire placed around load-current-carrying wire, acts as transformer core, load-current-carrying wire acts as primary winding of transformer, and coil wrapped on core acts as secondary winding.

Canter, Stanley↗
DOE OSTI2018

Passive magnetic bearing elements and configurations utilizing alternative polarization and Amperian current direction

A ferromagnetic shield in contact with a magnet bar at the opposite end from the working surfaces of the bar eliminates the field canceling effects that arise from the Amperian currents at that end. The optimum polarization direction for such bars is one that is parallel to the azimuthal coordinate of the bar. The field at the working surface of the bar approaches that of a bar of infinite length because the shield, located on the side opposite to that of the working surface, completely eliminates, or at least substantially reduces, the field cancellation effect that normally would occur. The magnet bars with shields can be assembled on rotors and stators in flywheel storage systems and other rotating machinery.

42 ENGINEERING↗
DOE OSTI2014

Apparatuses and method for converting electromagnetic radiation to direct current

An energy conversion device may include a first antenna and a second antenna configured to generate an AC current responsive to incident radiation, at least one stripline, and a rectifier coupled with the at least one stripline along a length of the at least one stripline. An energy conversion device may also include an array of nanoantennas configured to generate an AC current in response to receiving incident radiation. Each nanoantenna of the array includes a pair of resonant elements, and a shared rectifier operably coupled to the pair of resonant elements, the shared rectifier configured to convert the AC current to a DC current. The energy conversion device may further include a bus structure operably coupled with the array of nanoantennas and configured to receive the DC current from the array of nanoantennas and transmit the DC current away from the array of nanoantennas.

30 DIRECT ENERGY CONVERSION↗