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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Strongly temperature dependent ferroelectric switching in AlN, Al 1-x Sc x N, and Al 1-x B x N thin films

This manuscript reports the temperature dependence of ferroelectric switching in Al 0.84 Sc 0.16 N, Al 0.93 B 0.07 N, and AlN thin films. Polarization reversal is demonstrated in all compositions and is strongly temperature dependent. Between room temperature and 300 °C, the coercive field drops by almost 50% in all samples, while there was very small temperature dependence of the remanent polarization value. Furthermore, over this same temperature range, the relative permittivity increased between 5% and 10%. Polarization reversal was confirmed by piezoelectric coefficient analysis and chemical etching. Applying intrinsic/homogeneous switching models produces nonphysical fits, while models based on thermal activation suggest that switching is regulated by a distribution of pinning sites or nucleation barriers with an average activation energy near 28 meV.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Spin–orbit coupling proximity effect in MoS 2 /Fe 3 GeTe 2 heterostructures

Layered two-dimensional (2D) magnet/semiconductor heterostructures combine spintronic and optoelectronic properties of constituent materials, leading to new magneto-optical and magnetoelectric phenomena such as spontaneous emission of helical light and enhanced Zeeman splitting in single photon emission. While prior focus was mostly on the magnetic proximity effect, where properties of 2D magnets are transferred to nonmagnetic 2D materials, the inverse effect of 2D semiconductors altering 2D magnets is much less understood. Here, we fabricated and studied van der Waals (vdW) heterostructures of 2D magnet Fe 3 GeTe 2 (FGT) and 2D semiconductor MoS 2 . With reflectance magnetic circular dichroism, we found that the coercive field of MoS 2 -covered FGT reduces compared with uncovered FGT, agreeing well with our first-principles calculations. With its strong spin–orbit coupling (SOC), MoS 2 effectively alters the crystal field of the adjacent FGT and its magnetic anisotropy. Furthermore, an unconventional two-step hysteresis loop emerges in MoS 2 /FGT as a result of the superposition of two regions of FGT: at the interface and away from the interface. Our experimental elucidation of the SOC proximity effect that MoS 2 exerts on FGT provides fundamental understanding for the rational development of 2D magnet/semiconductor heterostructures.

2D materials↗
DOE OSTI2022

A Landau–Devonshire analysis of strain effects on ferroelectric Al 1-x Sc x N

We present a thermodynamic analysis of the recently discovered nitride ferroelectric materials using the classic Landau–Devonshire approach. Electrostrictive and dielectric stiffness coefficients of Al 1-x Sc x N with a wurtzite structure (6 mm) are determined using a free energy density function assuming a hexagonal parent phase (6/mmm), with the first-order phase transition based on the dielectric stiffness relationships. The results of this analysis show that the strain sensitivity of the energy barrier is one order of magnitude larger than that of the spontaneous polarization in these wurtzite ferroelectrics, yet both are less sensitive to strain compared to classic perovskite ferroelectrics. These analysis results reported here explain experimentally reported sensitivity of the coercive field to elastic strain/stress in Al 1-x Sc x N films and would enable further thermodynamic analysis via phase field simulation and related methods.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Delineating magnetization dynamics in solution-processed doped yttrium iron garnet thin films

Here, in this work, thin films of ruthenium-doped and cerium-doped yttrium iron garnet were deposited on silicon using solgel chemistry. Doped YIG could be produced in phase pure form up to a precursor stoichiometry of Y 3 Ru 0.1 Fe 4.9 O 12 and Ce 0.7 Y 2.3 Fe 5 O 12 . Both dopants significantly increase the coercivity and anisotropy field of the materials either due to domain wall pinning or increased spin–orbit coupling from the dopant. To delineate these two effects, the dynamic magnetic properties were studied using strip line ferromagnetic resonance (FMR). The FMR linewidth was separated into intrinsic loss and inhomogeneous line broadening. Inhomogeneous line broadening was found to dominate the magnetic losses in all the films likely due to magnon scattering off grain boundaries, but the Gilbert damping remained fairly low. By comparing the two dopants, it was found that Gilbert damping increased more in Ce:YIG films than in Ru:YIG films. This finding was corroborated by changes in the anisotropy field of the films, indicating a larger contribution from spin–orbit coupling from cerium than from ruthenium. Surprisingly, while magnetic loss globally increased with higher substitution, adding a small amount of dopant actually reduced the inhomogeneous line broadening in both sets of films. This was corroborated by crystallite size. The damping in Ru:YIG also decreased with a small amount of the dopant, which has been predicted by Kittel for doped garnets. Thus, it follows that there is an ideal doping regime where solgel YIG can be doped at low levels without increasing magnetic loss.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Implementing microwave impedance microscopy in a dilution refrigerator

We report the implementation of a dilution refrigerator-based scanning microwave impedance microscope with a base temperature of ∼100 mK. The vibration noise of our apparatus with tuning-fork feedback control is as low as 1 nm. Using this setup, we have demonstrated the imaging of quantum anomalous Hall states in magnetically (Cr and V) doped (Bi, Sb)2Te3 thin films grown on mica substrates. Both the conductive edge modes and topological phase transitions near the coercive fields of Cr- and V-doped layers are visualized in the field-dependent results. Our study establishes the experimental platform for investigating nanoscale quantum phenomena at ultralow temperatures.

Instruments & Instrumentation↗
DOE OSTI2023

Ferroelectric behavior of sputter deposited Al 0.72 Sc 0.28 N approaching 5 nm thickness

Ferroelectric Al 1-x Sc x N has raised much interest in recent years due to its unique ferroelectric properties and complementary metal oxide semiconductor back-end-of-line compatible processing temperatures. Potential applications in embedded nonvolatile memory, however, require ferroelectric materials to switch at relatively low voltages. One approach to achieving a lower switching voltage is to significantly reduce the Al 1-x Sc x N thickness. In this work, ferroelectric behavior in 5-27 nm films of sputter deposited Al 0.72 Sc 0.28 N has been studied. We find that the 10 kHz normalized coercive field increases from 4.4 to 7.3 MV/cm when reducing the film thickness from 27.1 to 5.4 nm, while over the same thickness range, the characteristic breakdown field of a 12.5 μm radius capacitor increases from 8.3 to 12.1 MV/cm. In conclusion, the 5.4 nm film demonstrates ferroelectric switching at 5.5 V when excited with a 500 ns pulse and a switching speed of 60 ns.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2023

Ferroelectric Al1 − xBxN thin films integrated on Si

Ferroelectric Al0.93B0.07N thin films are prepared (100) Si substrates. The necessary c-axis out-of-plane orientation to observe macroscopic ferroelectric switching was achieved by implementing an initial Ar/N2 plasma treatment, followed by a thin layer of AlN to initiate the desired texture and a 150 nm W layer. The plasma treatment facilitates crystallinity enhancement of the AlN template layer, allowing for subsequent growth of highly oriented W and Al0.93B0.07N layers. The W layer exhibits random in-plane orientation and exclusive (110) out-of-plane orientation with a rocking curve width of 1.4°. When grown on these W surfaces, 175 nm thick Al0.93B0.07N films exhibit random in-plane orientation and exclusive (001) texture with rocking curve full-width-half-max values of 1.6° and RMS roughness values less than 1 nm. Polarization hysteresis measurements show robust hysteresis with coercive field values of 5.4 MV/cm and remanent polarization values of 136 μC/cm2. XPS depth profile analysis suggests that the plasma treatment converts the existing native oxide to a nitrogen rich oxynitride with approximate composition Si3O0.5N3.67. Cross-sectional TEM reveals that the oxynitride interlayer is amorphous and ∼3.4 nm thick, more than double the native oxide thickness measured by multiwavelength ellipsometry, implying that (oxy)nitride growth continues after conversion of the native oxide. This new family of ferroelectric wurtzites is interesting from an integration perspective given their chemical compatibility with mainstream semiconductors. Developing synthesis routes that promote needed texture while preserving compatible processing windows is an important step toward practical integration.

Physics↗
DOE OSTI2023

Sub-quarter micrometer periodically poled Al 0.68 Sc 0.32 N for ultra-wideband photonics and acoustic devices

In this study, we demonstrate the ability of polarity inversion of sputtered aluminum scandium nitride thin films through post-fabrication processes with domain widths as small as 220 nm at a periodicity of 440 nm. An approach using photo- and electron-beam lithography to generate sub-quarter micrometer feature size with adjustable duty cycle through a lift-off process is presented. Here, the film with a coercive field $E_c^+$ of 5.35 MV/cm was exercised first with a 1 kHz triangular double bipolar wave and ultimately poled with a 0.5 kHz double monopolar wave using a Radiant Precision Premier II tester. The metal polar (M-polar) and nitrogen polar (N-polar) domains were identified and characterized through potassium hydroxide wet etching as well as piezoresponse force microscopy (PFM). Well-distinguished boundaries between the oppositely polarized domain regions were confirmed through the phase diagram of the PFM results. The relationship between the electrode width, poling voltage, and domain growth was experimentally studied and statistically analyzed, where 7.96 nm/V domain width broadening vs escalating poling voltage was observed. This method produces extremely high domain spatial resolution in III-nitride materials via poling and is transferable to a CMOS-compatible photolithography process. The spatial resolution of the periodically poled Al 0.68 Sc 0.32 N is suitable for second-harmonic generation of deep ultraviolet through quasi-phase-matching and RF MEMS operating in the X-Band spectrum.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Ferroelectric AlBN films by molecular beam epitaxy

We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode, Nb2N. While a control AlN thin film exhibits standard capacitive behavior, distinct ferroelectric switching is observed in the AlBN films with increasing Boron mole fraction. The measured remnant polarization Pr∼15μC/cm2 and coercive field Ec∼ 1.45 MV/cm in these films are smaller than those recently reported on films deposited by sputtering, due to incomplete wake-up, limited by current leakage. Because AlBN preserves the ultrawide energy bandgap of AlN compared to other nitride hi-K dielectrics and ferroelectrics, and it can be epitaxially integrated with GaN and AlN semiconductors, its development will enable several opportunities for unique electronic, photonic, and memory devices.

Physics↗
DOE OSTI2024

Ferroelectric Al1 − xBxN–GaN heterostructures

This report demonstrates Al0.93B0.7N thin films grown epitaxially on n-type GaN (0002)/c-plane sapphire substrates by reactive magnetron sputtering at 300 °C. At 200 nm film thickness, the Al0.93B0.07N layers exhibit partially relaxed substrate-induced epitaxial strain, a 0.16° wide (0002) rocking curve, in-plane crystallographic registry, and sub-nanometer surface roughness. Electrically, the stack shows robust hysteresis over three frequency decades, a remanent polarization of ∼125 μC/cm2, a strongly frequency dependent coercive field, highly uniform dc leakage currents, and endurance >106 field cycles. This report validates possibilities for ferroelectric nitride integration into conventional III-nitride heterostructures with high crystalline fidelity, high electrical resistivity, and persistent hysteresis. Such materials are synthesizable at thermal budgets and temperatures compatible with back-end-of-the-line boundary conditions.

Physics↗
DOE OSTI2025

Characterization of fluorite-structured ferroelectrics using transmission electron microscopy: Techniques, challenges, and recent advances

Fluorite-structured ferroelectrics, such as hafnium oxide and its alloyed variants, are key candidates for next-generation memory devices. Yet, fundamental questions about switching mechanisms, domain dynamics, and phase evolution remain open. Transmission electron microscopy (TEM) provides unique capabilities to address these challenges by simultaneously resolving the positions of anions and cations, chemical variations, and structural transformations. Recent advances—including in situ heating, electron beam-induced switching, electron energy loss spectroscopy, and differential phase contrast imaging—have revealed critical insights into phase transitions, potential switching pathways, and oxygen vacancy behavior. However, experimental barriers such as TEM sample-preparation-induced artifacts, high coercive fields, and imaging constraints persist, especially for polycrystalline films. By offering a focused overview of current TEM developments in fluorite ferroelectrics, this work outlines how TEM contributes to understanding key phenomena and proposes a roadmap for future studies.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Thickness scaling and ferroelectric switching in wurtzite structure zinc magnesium oxide thin films

This study reports the thickness scaling of sputtered ferroelectric Zn 0.61 Mg 0.39 O (ZMO) thin films down to 43 nm. Encapsulated IrO 2 /ZMO/Ir capacitors exhibited switchable polarizations exceeding 50 μC cm −2 and coercive fields that increased from 3.9 to 4.4 MV cm −1 as the thickness decreased. Switching kinetics are best described by the simultaneous non-linear nucleation and the growth model. Bimodal switching is prevalent at low thicknesses, with the fastest switching times measured to be approximately 400 ns. Device encapsulation made ZMO switching kinetics more abrupt, potentially due to changes in the concentration of atmosphere-induced defects such as hydroxides. These results demonstrate stable ferroelectricity and sub-microsecond switching in sub-50 nm wurtzite ZMO, highlighting its potential as a low-voltage ferroelectric for integrated nonvolatile memory applications.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Non-classical ion-indiffusion processes in quasi-one-dimensional ionic conductor KTiOPO4

Developments in coercive field engineering and waveguide writing via ion-exchange in the ferroelectric ionic-conductor KTiOPO4 (KTP) have led to breakthroughs within the field of nonlinear optics and quantum photonics. However, the microscopic diffusion dynamics of ion-exchange in KTP are poorly understood and show signs of non-classical diffusion dynamics. The precise control of ion-exchange gradients is critical for developing KTP into a mature, integrated nonlinear optical material but requires a level of control that, in turn, demands a deeper understanding of the ion-exchange process. We employ direct ToF-SIMS mapping to untangle the complex diffusion dynamics of the commonly used ion-exchange dopant ions: Rb, Ba, and K. We map periodic diffusion gradients of two exchanges, one dominated by Rb-ions and the other by Ba-ions. For the first time, we show the interdependent nature of the Ba- and Rb ion in the ion-exchange diffusion gradient. The low incorporation of the Ba ion is mapped and quantified, and dopant–crystal interactions are identified. This work highlights the complex diffusion dynamics of dopants in the KTP structure and lays the foundation for deterministic control of diffusion gradients for the next generation of integrated nonlinear and quantum photonic devices.

Barrett, Laura [ORNL]↗
DOE OSTI2026

Interplay of ferromagnetic and antiferromagnetic interactions in epitaxial Co 3 ZnN

Antiperovskite nitrides with the general formula M 3 AN have attracted significant attention due to their tunable electronic and magnetic properties. Among them are many cobalt-based compounds predicted to exhibit high thermodynamic stability and intriguing magnetic behavior. Here, we report the synthesis and magnetic characterization of epitaxial Co3ZnN thin films grown by radio frequency sputtering on SrTiO 3 (STO) and MgO substrates. X-ray diffraction confirms phase-pure (00l)-oriented films with cube-on-cube epitaxy on STO, with a c-lattice parameter of 3.752 Å. Magnetic measurements reveal clear hysteresis at 2 K with a coercive field of ∼0.11 T and a small net moment of 0.108 μ B /f.u., suggesting either a canted antiferromagnetic (AFM) or ferrimagnetic (FiM) configuration. Temperature-dependent magnetization measurements show a transition near 25 K, with strong AFM interactions with Curie–Weiss temperature (Θ) = −80.13 K. Complementary density functional theory and Monte Carlo simulations indicate a ferromagnetic (FM) ground state, with the FM–AFM energy difference decreasing systematically with increasing supercell size, consistent with competition between FM and AFM/FiM interactions. These results highlight Co3ZnN as a magnetically complex antiperovskite nitride with competing exchange interactions.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Influence of minor Ce additions on magnetic and electrical properties in Fe–6.5 wt. % Si alloy

Fe–6.5 wt. % Si alloys exhibit lower core loss at higher frequency than the dominating electrical steel containing 3.2% Si due to its lower magneto-crystalline anisotropy energy (MAE) and higher electrical resistivity. However, compared to nanocrystalline and amorphous soft-magnetic materials, 6.5% Si steel, although being cost effective and having high saturation magnetization, still has much to improve, especially with respect to MAE and resistivity. To explore further improvement, the effects of minor Ce additions (due to its mixed valence 4f-electron configuration) on the microstructure, electrical and magnetic behaviors of Fe–6.5 wt. % Si alloys were investigated. Due to its limited solubility in Fe, Ce exhibits condition-dependent effects on electrical resistivity, showing only marginal improvement under rapid solidification. In contrast, Ce addition degrades magnetic performance, reducing saturation magnetization (from 1.86 to 1.76 T) and increasing coercivity (from 88 to 171 A/m), which results in an 83.4% increase in core loss (W 10/1000 condition). Overall, Ce addition provides limited benefit in electrical resistivity while deteriorating magnetic properties, making it ineffective for enhancing the soft magnetic performance of Fe–6.5 wt. % Si alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Bi-modal particle size distribution for high energy product hybrid Nd–Fe–B—Sm–Fe–N bonded magnets

In this work, we have demonstrated high energy product bonded magnet by leveraging the variation in sizes between Nd-Fe-B and Sm-Fe-N, as well as their hard magnetic properties. The hybrid anisotropic bonded magnets contain 70 vol% of magnet powder (Dy-free Nd-Fe-B and Sm-Fe-N) and 30 vol% of nylon. The objective of the work was to create bi-modal and bi-compositional bonded magnets in which the fine (3μm) particles of Sm-Fe-N would be used to fill the voids between the bigger Nd-Fe-B (105μm) particles, thus improve packing density. The magnetic hysteresis loop did not show significant signs of decoupled interactions between the magnetic phases. It was also found that the performance of the bonded magnet was most enhanced at 1:4 ratio of Nd-Fe-B and Sm-Fe-N. At that ratio, maximum density of 5 g/cm 3 and the highest (BH) max value of 18.5 MGOe were obtained, although the intrinsic coercivity decreased, relative to the trend seen for other ratios. This work advances the opportunity to expand the use of Sm-Fe-N in bonded magnet applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Assessment of minnealloy fabrication via three routes

Transformer cores exhibiting higher operating power and improved efficiency are of great interest to electrical utilities, industry, and the de-carbonization effort. Minnealloy, α″-Fe16(C,N)2, a martensite made only of iron, nitrogen, and carbon, has shown the largest saturation magnetization of any soft ferromagnet, 250 emu/g, and tunable magnetocrystalline anisotropy. Given this represents a significant increase in power transferred per cycle compared to legacy transformer core materials, we investigate three novel, industrially scalable routes for fabricating Minnealloy. The martensite phase content is investigated for each route. Vibrating sample magnetometry is used to investigate the change in saturation magnetization and coercivity with respect to the relative content of the desired phase and other iron, iron-nitride, and iron oxide phase impurities. The relationship between structure and magnetic properties of bulk α″-Fe16(C,N)2 is investigated using LDA, PBE, and PBEsol exchange-correlation functionals within the frameworks of Hubbard-corrected density functional theory (DFT+U).

36 MATERIALS SCIENCE↗
DOE OSTI2022

Observation of a uniaxial ferroelectric smectic A phase

We report the observation of the smectic A F , a liquid crystal phase of the ferroelectric nematic realm. The smectic A F is a phase of small polar, rod-shaped molecules that form two-dimensional fluid layers spaced by approximately the mean molecular length. The phase is uniaxial, with the molecular director, the local average long-axis orientation, normal to the layer planes, and ferroelectric, with a spontaneous electric polarization parallel to the director. Polarization measurements indicate almost complete polar ordering of the ∼10 Debye longitudinal molecular dipoles, and hysteretic polarization reversal with a coercive field ∼2 × 10 5 V/m is observed. The SmAF phase appears upon cooling in two binary mixtures of partially fluorinated mesogens: 2N/DIO, exhibiting a nematic (N)–smectic Z A (SmZ A )–ferroelectric nematic (N F )–SmA F phase sequence, and 7N/DIO, exhibiting an N–SmZ A –SmA F phase sequence. The latter presents an opportunity to study a transition between two smectic phases having orthogonal systems of layers.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗