On-Chip p-MOSFET Dosimetry
On-chip p-FETs were developed to monitor the radiation dose of n-well CMOS ICs by monitoring the threshold voltage shifts due to radiation induced oxide and interface charge.
SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
On-chip p-FETs were developed to monitor the radiation dose of n-well CMOS ICs by monitoring the threshold voltage shifts due to radiation induced oxide and interface charge.
Availability of board solder joint reliability information is critical to the wider implementation of Chip Scale Packages (CSPs).
This paper reviews many factors that affect interconnect reliability of commercial-off-the-shelf (COSTS) chip scale package (CSP) assemblies.
In this paper, an ultra-fast smart vision system-on-a-chip design is proposed to provide effective solutions for real time machine vision applications by taking advantages of recent advances in integrated sensing/processing designs, electronic neural networks, advanced microprocessors and sub-micron VLSI technology.
We present a hybrid solid-state cavity quantum electrodynamics (QED) platform that integrates a high density of coherent organic molecules with high-quality-factor nanophotonics. Thin anthracene crystals doped with dibenzoterrylene (DBT) are mechanically transferred onto prefabricated silicon nitride photonic crystal cavities, preserving both the cavity quality and molecular coherence. This approach decouples emitter synthesis from nanofabrication, providing a pathway for integrating other types of emitters. The high density of molecular emitters results in up to ten molecules being coupled to a single cavity. By tuning pairs of molecules into resonance within a single cavity mode, we observe cavity-mediated interactions in both dispersive and dissipative regimes. Furthermore, these results establish an accessible route to deterministic on-chip single- and multiphoton sources.
A compact, chip-scale mid-infrared gas sensor is demonstrated, leveraging a two-dimensional photonic crystal waveguide (PCW) fabricated on a silicon-on-insulator (SOI) platform. The PCW comprises a hexagonal lattice with lattice constant a = 860 nm and hole radius r = 0.22a, incorporating a central line defect of reduced-radius holes (r s = 0.7r) to induce slow-light propagation near the photonic band edge with a group index of approximately 73, thereby enhancing light-matter interaction. The sensor operates at fundamental absorption wavelengths of 3.42 μm for nitrogen dioxide (NO 2 ) and 3.40 μm for methane (CH 4 ), utilizing the strongest molecular vibrational transitions for maximum sensitivity. Experimental validation was conducted using dynamically diluted gas mixtures generated by mass flow controllers, with signal acquisition performed by a liquid nitrogen-cooled InSb detector. For NO 2 , the sensor exhibited excellent linear response over 5–25 ppm (part per million) with coefficient of determination R 2 = 0.9934, achieving a detection limit of 210 ppb (part per billion)─representing the first reported silicon photonic-based NO 2 detection. For CH 4 , exposure to 25 ppm resulted in a 6.4% decrease in transmitted intensity, demonstrating multigas sensing capability. The CMOS-compatible fabrication process and compact 3 mm device footprint establish this SOI-PCW platform as a scalable, low-power solution for integrated mid-infrared gas sensing, with significant potential for environmental monitoring and industrial safety applications.
Arrays of neutral atoms trapped in optical tweezers have emerged as a leading platform for quantum information processing and quantum simulation due to their scalability, reconfigurable connectivity, and high-fidelity operations. Individual atoms are promising candidates for quantum networking due to their capability to emit indistinguishable photons that are entangled with their internal atomic states. Integrating atom arrays with photonic interfaces would enable distributed architectures in which nodes hosting many processing qubits could be efficiently linked together via the distribution of remote entanglement. However, many atom array techniques cease to work in close proximity to photonic interfaces, with atom detection via standard fluorescence imaging presenting a major challenge due to scattering from nearby photonic devices. Here, we demonstrate an architecture that combines atom arrays with up to 64 optical tweezers and a millimeter-scale photonic chip hosting more than 100 nanophotonic cavities. We achieve high-fidelity ( ~ 99.2%), background-free imaging in close proximity to nanofabricated cavities using a multichromatic excitation and detection scheme. The atoms can be imaged while trapped a few hundred nanometers above the dielectric surface, which we verify using Stark shift measurements of the modified trapping potential. Finally, we rearrange atoms into defect-free arrays and load them simultaneously onto the same or multiple devices.
A seamless chip-to-world photonic interface enables broad advancements in optical ranging, display, communication, computation and quantum information science. The ideal solution enables two-dimensional scanning of a diffraction-limited beam from anywhere on a photonic integrated circuit to a large number of resolvable spots. Current beam-scanning technologies are limited by a fundamental trade-off: photonic-integrated-circuits with diffractive optics offer scalability but have poor mode quality, whereas inertially limited micromechanical scanners provide high-quality beams but lack scalable integration. Here we report a photonic ski-jump—a nanoscale waveguide monolithically integrated on a piezoelectric cantilever—to overcome these limitations. It passively curls ~90° out-of-plane within a less-than-0.1 mm 2 footprint, emits a submicrometre, broadband diffraction-limited beam, and exhibits kilohertz-rate mechanical resonances with quality factors of over 10,000. Fabricated in a volume complementary metal–oxide–semiconductor (CMOS) foundry, our device enables scalable two-dimensional beam scanning. Driven on-resonance at CMOS-level voltages, it achieves a footprint-adjusted spot rate of 68.6 mega spots s –1 mm–², exceeding state-of-the-art micro-electro-mechanical systems mirrors by more than 50-fold, which is sufficient for one million pixels at 100 Hz from an approximately 1.5 mm diameter footprint. We demonstrate full-colour image and video projection, and single-photon initialization and readout from silicon vacancy centres in diamond. Finally, by demonstrating uniformity across a 64 ski-jump array, we establish a pathway to achieving greater than one gigaspot resolution at kilohertz rates within a sub-5-cm-diameter footprint, creating a seamless optical pipeline between integrated photonic processors and the free-space world.
The next generation of fusion reactors, exemplified by projects such as the Demonstration Power Plant following the International Thermonuclear Experimental Reactor, faces the monumental challenge of proving the viability of generating electricity through thermonuclear fusion. This pursuit introduces heightened complexities in diagnostic methodologies, particularly in microwave-based diagnostics. The increased neutron fluence necessitates significant reductions in vessel penetrations and the elimination of internal diagnostics, posing substantial challenges. SoC technology offers a promising solution by enabling the miniaturization, modularization, integration, and enhancing the reliability of microwave systems. After seven years of research, our team successfully pioneered the V- and W-band system-on-chip approach, leading to the development of active transmitters and passive receiver modules applied in practical settings, notably within the DIII-D tokamak project. Arrays of these modules have supported microwave imaging diagnostics. New physics measurement results from the Electron Cyclotron Emission Imaging system on DIII-D provide compelling evidence of improved diagnostics following the adoption of SoC technology. Furthermore, we achieved a breakthrough in developing an F-band SoC, advancing higher frequency capabilities for fusion devices. These achievements represent a significant leap forward in fusion diagnostic technology, marking substantial progress toward establishing reliable and efficient plasma diagnostics for future fusion reactors.
We demonstrate a monolithic coplanar stripline platform for on-chip terahertz (THz) generation, transmission, and detection, addressing key challenges of mode purity, bandwidth, and referencing. Capacitive coupling of the photoconductive generator switch enforces pure odd-mode propagation, increases THz field strength, and extends the operational frequency range, achieving 0.05–1.4 THz. Our architecture enables fully monolithic fabrication with amorphous silicon switches, in situ field referencing, and galvanic isolation between generation and detection. Finite-element simulations and experiments confirm that suppressing parasitic modes improves signal integrity, providing a robust platform for high-fidelity THz spectroscopy, ultrafast electronics, and nanoscale quantum materials research.
A low-power integer-N frequency synthesizer for flexible on-chip clock generation has been designed in a 65 nm CMOS process. The circuit can be programmed to generate two independent low-jitter clocks between 30 MHz and 3 GHz that are locked to a 10–50 MHz reference input. The design uses a phase-locked loop (PLL) with a dual-tuned LC voltage-controlled oscillator (VCO), programmable feedback divider, and dual output dividers. The total power consumption from 1.2 V and 0.8 V supplies is 4.0 mW. In conclusion, experimental results confirm the functionality of the proposed synthesizer over a wide range of output frequencies.
Mechanical systems are pivotal in quantum technologies because of their long coherent time and versatile coupling to qubit systems. So far, the coherent and dynamic control of gigahertz-frequency mechanical modes mostly relies on optomechanical coupling and piezoelectric coupling to superconducting qubits. Here, we demonstrate on-chip cavity electroacoustic dynamics using our microwave-frequency electrically modulated phononic crystal resonators on lithium niobate. Leveraging the high dispersion of phononic crystal, our acoustic modes space unevenly in the frequency spectrum, emulating atomic energy levels. Atomiclike transitions between different acoustic modes are selectively achieved by applying electrical fields to modulate acoustic modes via the nonlinear piezoelectricity of lithium niobate. Among two modes, we demonstrate Autler-Townes splitting, ac Stark shift, and Rabi oscillation with a maximum cooperativity of 4.18. Extending to three modes, we achieve nonreciprocal frequency conversions with an isolation up to 20 dB. Nonreciprocity can be tuned by the time delay between the two modulating pulses. Finally, our cavity electroacoustic platform could find broad applications in sensing, microwave signal processing, acoustic computing, and quantum acoustics.
Quantum computers may one day enable the efficient simulation of strongly coupled plasmas that lie beyond the reach of classical computation in regimes where quantum effects are important and the scale separation is large. Here, in this article, we take a first step toward efficient simulation of quantum plasmas by demonstrating linear plasma wave propagation on a superconducting quantum chip. Using high-fidelity and highly expressive device-native gates, combined with an error-mitigation technique, we simulate the scattering of laser pulses from inhomogeneous plasmas. Our approach is made feasible by the identification of a suitable local spin model whose excitations mimic plasma waves, and whose circuit implementation requires a lower gate count than other proposed approaches that would require a future fault-tolerant quantum computer. This work opens avenues to study more complicated phenomena that cannot be simulated efficiently on classical computers, such as nonlinear quantum dynamics when strongly coupled plasmas are driven out of equilibrium.
Recent advances in cold atom interferometry with optical and magnetic atom guides have set the stage for quantum inertial sensors capable of operating in dynamic environments. In this work, we present three key innovations—evanescent-field (EF) atom guides, optical nanofiber testbeds, and membrane-waveguide photonic integrated circuit (PIC) platforms—to advance EF-guided atom interferometry. First, we demonstrate EF atom guides on optical nanofiber testbeds, which serve as performance benchmarks for our membrane-waveguide PIC platforms. Second, we achieve low-power ( ~ 5 mW) guiding of freely moving, laser-cooled 133 Cs atoms in two-color, traveling-wave EF optical dipole traps at the novel, heat-efficient magic wavelengths of 793 and 937 nm (i.e., “793/937-nm EF atom guides”). Concurrently, we design and fabricate membrane-waveguide PIC platforms for these EF atom guides; in our prior work, we showed that these structures safely accommodate 4–6 times the required optical trap power under vacuum and enable dense cold atom generation via magneto-optical trapping in the vicinity of the optical wavguide for efficient loading. Third, we verify preserved atomic coherence via microwave fields and EF-coupled Doppler-free Raman beams; to our knowledge, this is the first report of coherence fringes driven by co-propagating EF-coupled Raman beams with only 150 nW of total optical power. By providing a direct comparison between optical nanofiber testbeds and membrane-waveguide PIC platforms, our results lay critical groundwork for the on-chip realization of EF-guided atom interferometry and the development of fully integrated, compact, lightweight, and low-power quantum accelerometers and gyroscopes.
Code developed for Studying-Polymers-on a-Chip (SPOC) project LDRD-LW-006. Public release needed for sharing code for publication.
This work demonstrates a 3 GHz-spaced frequency beam splitter using an on-chip pulse shaper, achieving near-ideal gate performance and paving the way for scalable quantum networking.
Floquet engineering uses time-periodic electromagnetic fields to modify the electronic properties of quantum materials via the creation of Floquet-Bloch states. These photon-dressed states inherit features from both the material and the driving field, enabling the exploration and control of quantum phenomena in light-matter hybrid systems. In non-centrosymmetric materials, shift currents can arise from the quantum geometric properties of electronic wavefunctions. However, shift currents from Floquet-Bloch states remain experimentally unexplored. Here, we employ an on-chip optoelectronic circuit to detect intrinsic terahertz emission from Floquet-Bloch states in T d -WTe 2 under intense optical driving. We observe strong edge-localized terahertz emission that scales linearly with the driving field, consistent with the theoretical prediction for shift currents generated by Floquet-Bloch states. The results advance our understanding of strongly driven quantum materials and provide insights for developing efficient, bias-free terahertz sources for future optoelectronic technologies.
Abstract Frequency-bin encoding furnishes a compelling pathway for quantum information processing systems compatible with established lightwave infrastructures based on fiber-optic transmission and wavelength-division multiplexing. Yet although significant progress has been realized in proof-of-principle tabletop demonstrations, ranging from arbitrary single-qubit gates to controllable multiphoton interference, challenges in scaling frequency-bin processors to larger systems remain. In this Perspective, we highlight recent advances at the intersection of frequency-bin encoding and integrated photonics that are fundamentally transforming the outlook for scalable frequency-based quantum information. Focusing specifically on results on sources, state manipulation, and hyperentanglement, we envision a possible future in which on-chip frequency-bin circuits fulfill critical roles in quantum information processing, particularly in communications and networking.