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At least 181 records · Page 10

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NASA NTRS1972

Some observations on uranium carbide alloy/tungsten compatibility.

Results of chemical compatibility tests between both pure tungsten and thoriated tungsten run at 1800 C for up to 3300 hours with uranium carbide alloys. Alloying with zirconium carbide appeared to widen the homogeneity range of uranium carbide, making additional carbon available for reaction with the tungsten. Reaction layers were formed both by vapor phase reaction and by physical contact, producing either or both UWC2 and W2C, depending upon the phases present in the starting fuel alloy. Formation of UWC2 results in slow growth of the reaction layer with time, while W2C reaction layers grow rapidly, allowing equilibrium to be reached in less than 2500 hours at 1800 C. Neither the presence of a thermal gradient nor the presence of thoria in the tungsten clad affect the reactions observed.

Phillips, W. M.↗

NASA NTRS1975

Carbide coated fibers in graphite-aluminum composites

The NASA-supported program at the Los Alamos Scientific Laboratory (LASL) to develop carbon fiber-aluminum matrix composites is described. Chemical vapor deposition (CVD) was used to uniformly deposit thin, smooth, continuous coats of TiC on the fibers of graphite tows. Wet chemical coating of fibers, followed by high-temperature treatment, was also used, but showed little promise as an alternative coating method. Strength measurements on CVD coated fiber tows showed that thin carbide coats can add to fiber strength. The ability of aluminum alloys to wet TiC was successfully demonstrated using TiC-coated graphite surfaces. Pressure-infiltration of TiC- and ZrC-coated fiber tows with aluminum alloys was only partially successful. Experiments were performed to evaluate the effectiveness of carbide coats on carbon as barriers to prevent reaction between alluminum alloys and carbon. Initial results indicate that composites of aluminum and carbide-coated graphite are stable for long periods of time at temperatures near the alloy solidus.

Imprescia, R. J.↗

NASA NTRS1975

Creep behavior of uranium carbide-based alloys

The present work gives the results of experiments on the influence of zirconium carbide and tungsten on the creep properties of uranium carbide. The creep behavior of high-density UC samples follows the classical time-dependence pattern of (1) an instantaneous deformation, (2) a primary creep region, and (3) a period of steady-state creep. Creep rates for unalloyed UC-1.01 and UC-1.05 are several orders of magnitude greater than those measured for carbide alloys containing a Zr-C and/or W dispersoid. The difference in creep strength between alloyed and unalloyed materials varies with temperature and applied stress.

Seltzer, M. S.↗

NASA NTRS1978

Thermal shock and erosion resistant tantalum carbide ceramic material

Ceramic tantalum carbide artifacts with high thermal shock and mechanical erosion resistance are provided by incorporating tungsten-rhenium and carbon particles in a tantalum carbide matrix. The mix is sintered by hot pressing to form the ceramic article which has a high fracture strength relative to its elastic modulus and thus has an improved thermal shock and mechanical erosion resistance. The tantalum carbide is preferable less than minus 100 mesh, the carbon particles are preferable less than minus 100 mesh, and the tungsten-rhenium particles are preferable elongate, having a length to thickness ratio of at least 2/1. Tungsten-rhenium wire pieces are suitable as well as graphite particles.

Honeycutt, L., III↗

NASA NTRS1978

Determination of oxygen in silicon and carbide by activation with 27.2 meV alpha particles

The Si sample was polished on one side, and on the other side Ni was applied chemically and soldered with Pb to a water cooled Cu substrate. Optical quartz standard was fixed from the other side. Si carbide samples were soldered to a substrated with In. The prepared samples were irradiated in a cyclotron with a 27.2 MeV alpha particle beam. The layers were removed from the Si and Si carbide samples by grinding and the positron activity of F-18(t sub 1/2 110 min) was measured by using a gamma, gamma coincidence spectrometer with two NaI(TI) crystals. For analysis of Si carbide, the activity decay curve of the samples was recorded to find the contribution of the positron activity of Cu-65(t sub 1/2 12.9 hr) which formed from Ni impurity on irradiation.

Dolgolenko, A. P.↗

NASA NTRS1977

Friction, deformation and fracture of single-crystal silicon carbide

An investigation was conducted to determine the nature of the deformation and fracture of silicon carbide and its effects on friction properties. Friction experiments were conducted with hemispherical and conical diamond riders sliding on the basal plane of silicon carbide. The results indicate that, when deformation is primarily elastic, the friction does not depend on crystallographic orientation and there is no detectable fracture or cracking. When, however, plastic deformation occurs, silicon carbide exhibits anisotropic friction and deformation behavior. Surface fracture crack patterns surrounding wear tracks are observed to be of three types. The crack-geometries of two types are generally independent of orientation, the third crack, however, depends on the orientation. All surface cracks extend into subsurface.

Miyoshi, K.↗

NASA NTRS1979

Friction and wear characteristics of iron-chromium alloys in contact with themselves and silicon carbide

Sliding friction experiments were conducted with various iron-chromium alloys in contact with (1) themselves, (2) single crystal silicon carbide disks, and (3) single crystal abrasive grit of silicon carbide. Results indicate the coefficients of friction for the alloys sliding against themselves are between those for pure iron and pure chromium, and are only slightly different with 1, 5, 9, 14, and 19 weight percent chromium in iron. The wear is due, primarily, to shearing, or tearing fracture, of the cohesive bonds in the bulk metal and plowing of the bulk by lumps of wear debris. There are only slight differences in the coefficients of friction for the various alloys when sliding on silicon carbide. The coefficient of friction for the alloys are higher than those for pure iron and pure chromium. Alloy hardening observed in the alloys plays a dominant role in controlling the abrasive friction and wear behavior of the alloys.

Miyoshi, K.↗

NASA NTRS1979

Adherence of sputtered titanium carbides

Sputtered coatings of the refractory metal carbides are of great interest for applications where hard wear-resistant materials are desired. The usefulness of sputtered refractory carbides is often limited, in practice, by spalling or interfacial separation. In this work improvements in the adherence of refractory carbides on iron, nickel and titanium based alloys were obtained by using oxidation, reactive sputtering or sputtered interlayers to alter the coating-substrate interfacial region. X-ray photoelectron spectroscopy and argon ion etching were used to characterize the interfacial regions, and an attempt was made to correlate adherence as measured in wear tests with the chemical nature of the interface.

Brainard, W. A.↗

NASA NTRS1979

Anisotropic friction, deformation, and fracture of single-crystal silicon carbide at room temperature

Anisotropic friction, deformation, and fracture studies were conducted with /0001/, /10(-1)0/, and /11(-2)0/ silicon carbide surfaces in sliding contact with diamond. The experiments were conducted with loads of 0.1, 0.2, and 0.3 N at a sliding velocity of 3 mm/min in mineral oil or in dry argon at room temperature. The 1010 direction on the basal /0001/ plane exhibits the lowest coefficient of friction and the greatest resistance to abrasion for silicon carbide. Anisotropic friction and deformation of the /0001/, /10(-1)0/, and /11(-2)0/ silicon carbide surfaces are primarily controlled by the slip system /10(-1)0/ 11(-2)0. The anisotropic fracture during sliding on the basal plane is due to surface cracking along /10(-1)0/ and subsurface cracking along /0001/. The fracture during sliding on the /11(-2)0/ or /10(-1)0/ surfaces is due to surface cracking along /0001/ and /11(-2)0/ or /10(-1)-1 and to subsurface cracking along /10(-1)0/.

Miyoshi, K.↗

NASA NTRS1980

Improved adhesion of sputtered refractory carbides to metal substrates

Sputtered coatings of the refractory metal carbides are of great interest for applications where hard wear-resistant materials are desired. The usefulness of sputtered refractory carbides is often limited in practice by spalling or interfacial separation. In this work improvements in the adherence of refractory carbides on iron, nickel and titanium base alloys were obtained by using oxidation, reactive sputtering or sputtered interlayers to alter the coating-substrate interfacial region. X-ray photoelectron spectroscopy and argon ion etching were used to characterize the interfacial regions, and an attempt was made to correlate adherence as measured in wear tests with the chemical nature of the interface.

Wheeler, D. R.↗

NASA NTRS1981

Tribological properties and surface chemistry of silicon carbide at temperatures to 1500 C

Silicon carbide surfaces were heated to 1500 C in a vacuum and analyzed at room temperature with X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The basic unit of the surfaces was considered as a plane of a tetrahedron of either SiC4 and CSi4 composition. AES spectra were obtained from 250-1500 C, with an analysis depth of 1 nm revealed the presence of little Si and mostly graphite. XPS analysis depth was 2 nm or less, and Si was found in the second 1 nm. Sliding friction tests with single-crystal silicon carbide in contact with iron in a vacuum were characterized by a stock-slip value. The coefficient of friction increased with increasing temperature up to 400 C, then decreased with increasing temperature from 400-600 C. Reheating surfaces to 800 C after preheating them to that temperature produced no changes in AES readings. It is concluded that the maximum density of silicon and silicon-carbide is at 800 C, and the higher the sliding temperature, the more metal that is transferred.

Miyoshi, K.↗

NASA NTRS1981

Anisotropic tribological properties of silicon carbide

The effects of crystallographic orientation on the tribological properties of single-crystal silicon carbide surfaces in contact with various solids are investigated for adhesive and abrasive wear processes. In the adhesive wear process, the adhesion and wear of silicon carbide is found to be markedly dependent on crystallographic orientation. The force resisting shearing fracture of the adhesive bonds at the interface is lower in preferred crystallographic direction of slip. In the abrasive wear process, the 1 0 -1 0 direction on the basal plane of silicon carbide exhibits the lowest coefficient of friction and the greatest resistance to abrasion.

Miyoshi, K.↗

NASA NTRS1983

Characterization of boron carbide with an electron microprobe

Within the framework of a study of heterogeneous materials (Matteudi et al., 1971: Matteudi and Verchery, 1972) thin deposits of boron carbide were characterized. Experiments using an electronic probe microanalyzer to analyze solid boron carbide or boron carbide in the form of thick deposits are described. Quantitative results on boron and carbon are very close to those obtained when applying the Monte Carlo-type correction calculations.

Matteudi, G.↗

NASA NTRS1983

Effect of carbide distribution on rolling-element fatigue life of AMS 5749

Endurance tests with ball bearings made of corrosion resistant bearing steel which resulted in fatigue lives much lower than were predicted are discussed. Metallurgical analysis revealed an undesirable carbide distribution in the races. It was shown in accelerated fatigue tests in the RC rig that large, banded carbides can reduce rolling element fatigue life by a factor of approximately four. The early spalling failures on the bearing raceways are attributed to the large carbide size and banded distribution.

Parker, R. J.↗

NASA NTRS1986

Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

Whitman, Pamela K.↗

NASA NTRS1988

Processing, texture and mechanical properties of sintered silicon carbide

With regard to its favorable properties, in particular those shown at high temperatures, silicon carbide is of great interest for applications related to the construction of engines and turbines. Thus, silicon carbide could replace heat-resisting alloys with the objective to achieve a further increase in operational temperature. The present investigation is concerned with approaches which can provide silicon carbide material with suitable properties for the intended applications, taking into account the relations between characteristics of the raw material, material composition, sinter conditions, and results of the sintering process. The effects of density and texture formation on the mechanical properties are studied. It is found that a dense material with a fine-grained microstructure provides optimal mechanical properties, while any deviation from this ideal condition can lead to a considerable deterioration with respect to the material properties.

Landfermann, H.↗

NASA NTRS1986

Improved silicon carbide for advanced heat engines

Work performed to develop silicon carbide materials of high strength and to form components of complex shape and high reliability is described. A beta-SiC powder and binder system was adapted to the injection molding process and procedures and process parameters developed capable of providing a sintered silicon carbide material with improved properties. The initial effort has been to characterize the baseline precursor materials (beta silicon carbide powder and boron and carbon sintering aids), develop mixing and injection molding procedures for fabricating test bars, and characterize the properties of the sintered materials. Parallel studies of various mixing, dewaxing, and sintering procedures have been carried out in order to distinguish process routes for improving material properties. A total of 276 MOR bars of the baseline material have been molded, and 122 bars have been fully processed to a sinter density of approximately 95 percent. The material has a mean MOR room temperature strength of 43.31 ksi (299 MPa), a Weibull characteristic strength of 45.8 ksi (315 MPa), and a Weibull modulus of 8.0. Mean values of the MOR strengths at 1000, 1200, and 14000 C are 41.4, 43.2, and 47.2 ksi, respectively. Strength controlling flaws in this material were found to consist of regions of high porosity and were attributed to agglomerates originating in the initial mixing procedures. The mean stress rupture lift at 1400 C of five samples tested at 172 MPa (25 ksi) stress was 62 hours and at 207 MPa (30 ksi) stress was 14 hours. New fluid mixing techniques have been developed which significantly reduce flaw size and improve the strength of the material. Initial MOR tests indicate the strength of the fluid-mixed material exceeds the baseline property by more than 33 percent.

Whalen, T. J.↗

NASA NTRS1990

Analysis of the pyrolysis products of dimethyldichlorosilane in the chemical vapor deposition of silicon carbide in argon

A study of the products and reactions occurring during the chemical vapor deposition of silicon carbide from dimethyldichlorosilane in argon is presented. Reaction conditions were as follows: 700 to 1100 C, a contact time of about 1 min, and a pressure of 1 atm. At these conditions, the gases that formed were mainly methane, hydrogen, silicon tetrachloride, trichlorosilane, and methyltrichlorosilane. The silicon carbide solid that formed showed the presence of hydrogen and chloride as impurities, which might degrade the silicon carbide properties. These impurities were eliminated slowly, even at 1100 C, forming hydrogen, trichlorosilane, and silicon tetrachloride.

Cagliostro, Domenick E.↗