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Results for “CONTACT RESISTANCE”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10

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DOE OSTI2020

Sudden-Discharge Cycling Characteristics and Millisecond Dynamic Behaviors of a HTS Stainless-Steel Insulated Double-Pancake Coil With Thin Copper Plates

We have tested an intermediate-sized HTS stainless-steel (co-wound) insulated double pancake coil (~132 turns per coil) and discovered dynamic effects during sudden discharge on both millisecond and second scales. For soft break, the power supply is turned off suddenly but the shunt resistor (164 milliohm) is still connected; for hard break, a high voltage contactor is used to suddenly open the circuit so that the leads are completely open. Hard break is dangerous to traditionally insulated LTS magnets, but the SS-insulated HTS DPC retained integrity over ¡80 charge-discharge cycles. Voltage decay curves for soft and hard breaks are studied on short and long timescales. On long timescales, we observe the expected exponential decay and measure the time constant to calculate contact resistance. On short timescales, we observe highly dynamic effects: a hyper-exponential decay suggesting that the inductance or contact resistance is suddenly changing with time, likely an indication of the RL circuit forming. Moreover, peak voltage immediately (ms) after the sudden discharge were collected and compared. It is found that the peak voltage in soft-discharge is proportional to the applied current, while the those in hard-break has a unique pattern and tends to stay flat even though the applied current increases.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA NTRS2011

Heat Transfer Measurement and Modeling in Rigid High-Temperature Reusable Surface Insulation Tiles

Heat transfer in rigid reusable surface insulations was investigated. Steady-state thermal conductivity measurements in a vacuum were used to determine the combined contribution of radiation and solid conduction components of heat transfer. Thermal conductivity measurements at higher pressures were then used to estimate the effective insulation characteristic length for gas conduction modeling. The thermal conductivity of the insulation can then be estimated at any temperature and pressure in any gaseous media. The methodology was validated by comparing estimated thermal conductivities with published data on a rigid high-temperature silica reusable surface insulation tile. The methodology was also applied to the alumina enhanced thermal barrier tiles. Thermal contact resistance for thermal conductivity measurements on rigid tiles was also investigated. A technique was developed to effectively eliminate thermal contact resistance on the rigid tile s cold-side surface for the thermal conductivity measurements.

Daryabeigi, Kamran↗

DOE OSTI2023

Pulsed Laser Annealed Ga Hyperdoped Poly‐Si / SiO x Passivating Contacts for High‐Efficiency Monocrystalline Si Solar Cells

Polycrystalline Si ( poly ‐Si)‐based passivating contacts are promising candidates for high‐efficiency crystalline Si solar cells. We show that nanosecond‐scale pulsed laser melting (PLM) is an industrially viable technique to fabricate such contacts with precisely controlled dopant concentration profiles that exceed the solid solubility limit. We demonstrate that conventionally doped, hole‐selective poly ‐Si/SiO x contacts that provide poor surface passivation of c ‐Si can be replaced with Ga‐ or B‐doped contacts based on non‐equilibrium doping. We overcome the solid solubility limit for both dopants in poly ‐Si by rapid cooling and recrystallization over a timescale of ∼25 ns. We show an active Ga dopant concentration of ∼3 × 10 20 cm −3 in poly ‐Si which is six times higher than its solubility limit in c ‐Si, and a B dopant concentration as high as ∼10 21 cm −3 . We measure an implied open‐circuit voltage of 735 mV for Ga‐doped poly ‐Si/SiO x contacts on Czochralski Si with a low contact resistivity of 35.5 ± 2.4 mΩ cm 2 . Scanning spreading resistance microscopy and Kelvin probe force microscopy show large diffusion and drift current in the p ‐ n junction that contributes to the low contact resistivity. Our results suggest that PLM can be extended for hyperdoping of other semiconductors with low solubility atoms to enable high‐efficiency devices.

14 SOLAR ENERGY↗

DOE OSTI2022

A Comprehensive Numerical and Experimental Study for the Passive Thermal Management in Battery Modules and Packs

Cooling plates in battery packs of electric vehicles play critical roles in passive thermal management systems to reduce risks of catastrophic thermal runaway. In this work, a series of numerical simulations and experiments are carried out to unveil the role of cooling plates (both between cells and a bottom plate parallel to the cell stack) on the thermal behavior of battery modules and packs under nail penetrations. First, we investigated the role of side cooling plates on the thermal runaway propagation mitigation in battery modules (1S3P) and packs (3S3P) by varying the key parameters of the side cooling plates, such as plate thicknesses, thermal contact resistances, and materials. Then, three important factors for passive thermal management systems are identified: (i) thermal mass of side cooling plates, (ii) interfacial thermal contact resistances, and (iii) the effective heat transfer coefficients at exterior surfaces. The roles of bottom cooling plates on thermal runaway propagation mitigation in 1S3P and 1S5P battery modules are numerically investigated by comparing the thermal behavior of the modules with only side cooling plates and with both side and bottom cooling plates.

25 ENERGY STORAGE↗

NASA NTRS2008

An Investigation of the Electrical Short Circuit Characteristics of Tin Whiskers

Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that has a currently unknown probability associated with it. Due to contact resistance electrical shorts may not occur at lower voltage levels. In this experiment, we study the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From this data we can estimate the probability of an electrical short, as a function of voltage, given that a free tin whisker has bridged two adjacent exposed electrical conductors. Also, three tin whiskers grown from the same Space Shuttle Orbiter card guide used in the aforementioned experiment were cross-sectioned and studied using a focused ion beam (FIB). The rare polycrystalline structure seen in the FIB cross section was confirmed using transmission electron microscopy (TEM). The FIB was also used to cross section two card guides to facilitate the measurement of the grain size to determine that the tin plating on the card guides had a bright finish.

Courey, Karim J.↗

NASA NTRS2008

An Empirical Model for Estimating the Probability of Electrical Short Circuits from Tin Whiskers-Part I

Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that has a currently unknown probability associated with it. Due to contact resistance, electrical shorts may not occur at lower voltage levels. In this experiment, we study the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From this data, we can estimate the probability of an electrical short, as a function of voltage, given that a free tin whisker has bridged two adjacent exposed electrical conductors. In addition, three tin whiskers grown from the same Space Shuttle Orbiter card guide used in the aforementioned experiment were cross sectioned and studied using a focused ion beam (FIB).

Courey, Karim↗

NASA NTRS2008

An Investigation of the Electrical Short Circuit Characteristics of Tin Whiskers

Courey, Karim J.↗

NASA NTRS2007

Tin Whisker Electrical Short Circuit Characteristics Part 2

Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that has a currently unknown probability associated with it. Due to contact resistance electrical shorts may not occur at lower voltage levels. In this experiment, we study the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From this data we can estimate the probability of an electrical short, as a function of voltage, given that a free tin whisker has bridged two adjacent exposed electrical conductors. In addition, three tin whiskers grown from the same Space Shuttle Orbiter card guide used in the aforementioned experiment were cross-sectioned and studied using a focused ion beam (FIB).

Courey, Karim J.↗

NASA NTRS1983

An experimental investigation and numerical prediction of thermomechanical phenomena in high speed rotor tip rubbing

A thermomechanical study of the intermittent rubbing of a rotor blade tip and a casing seal is carried out taking into account the existence of thermal contact resistance. The effect of the thermal properties of a plasma sprayed coating on the blade tip is studied. The influence of a variable heat generation and variable thermal contact resistance at the blade tip as it passes along the path of rubbing is also discussed.

Emery, A. F.↗

NASA NTRS1999

Heat Transfer Issues in Thin-Film Thermal Radiation Detectors

The Thermal Radiation Group at Virginia Polytechnic Institute and State University has been working closely with scientists and engineers at NASA's Langley Research Center to develop accurate analytical and numerical models suitable for designing next generation thin-film thermal radiation detectors for earth radiation budget measurement applications. The current study provides an analytical model of the notional thermal radiation detector that takes into account thermal transport phenomena, such as the contact resistance between the layers of the detector, and is suitable for use in parameter estimation. It was found that the responsivity of the detector can increase significantly due to the presence of contact resistance between the layers of the detector. Also presented is the effect of doping the thermal impedance layer of the detector with conducting particles in order to electrically link the two junctions of the detector. It was found that the responsivity and the time response of the doped detector decrease significantly in this case. The corresponding decrease of the electrical resistance of the doped thermal impedance layer is not sufficient to significantly improve the electrical performance of the detector. Finally, the "roughness effect" is shown to be unable to explain the decrease in the thermal conductivity often reported for thin-film layers.

Barry, Mamadou Y.↗

NASA NTRS1980

Apparatus for measuring semiconductor device resistance

A test structure is described for enabling the accurate measurement of the resistance characteristics of a semiconductor material and includes one or more pairs of electrical terminals disposed on the surface of the material to enable measurements of the resistance encountered by currents passed between the terminals. A pair of terminals includes a first terminal extending in a closed path, such as a circle, around a second terminal, so that all currents flowing between the terminals flow along a region of known width and length. Two or more pairs of concentric terminals can be utilized, wherein the ratio of radii of each pair of terminals is the same as the ratio for all other pairs of terminals, to facilitate the calculation of the contact resistance between each terminal and the semiconductor surface, as well as the calculation of the resistance of the semiconductor material apart from the effect of the terminal to semiconductor contact resistances.

Matzen, W. J.↗

NASA NTRS1992

Sinterless contacts to shallow junction InP solar cells

In the past, the achievement of good electrical contact to InP has inevitably been accompanied by mechanical degradation of the InP itself. Most contact systems require heat treatment after metal deposition that results in the dissolution of substantial amounts of InP into the metallization. Devices such as the solar cell, where shallow junctions are the rule, can be severely degraded if the damage to the semiconductor substrate is not precisely controlled. Two contact systems are described that provide low contact resistance to InP solar cells that do not require subjecting the current carrying metallization to a post deposition sintering process. It is shown that these two systems, one nickel based and the other silver based, provide contact resistivity values in the low 10(exp -6) ohm sq cm range, as fabricated, without the need for sintering.

Weizer, V. G.↗

NASA NTRS1983

Accelerated degradation of silicon metallization systems

Clemson University has been engaged for the past five years in a program to determine the reliability attributes of solar cells by means of accelerated test procedures. The cells are electrically measured and visually inspected and then subjected for a period of time to stress in excess of that normally encountered in use, and then they are reinspected. Changes are noted and the process repeated. This testing has thus far involved 23 different unencapsulated cell types from 12 different manufacturers, and 10 different encapsulated cell types from 9 different manufacturers. Reliability attributes of metallization systems can be classified as major or minor, depending on the severity of the effects observed. As a result of the accelerated testing conducted under the Clemson program, major effects have been observed related to contact resistance and to mechanical adherence and solderability. This paper does not attempt a generalized survey of accelerated test results, but rather concentrates on one particular attribute of metallization that has been observed to cause electrical degradation - increased contact resistance due to Schottky barrier formation. In this example basic semiconductor theory was able to provide an understanding of the electrical effects observed during accelerated stress testing.

Lathrop, J. W.↗

NASA NTRSDate not supplied

Realistic Thermographic Simulation of Impact Damage with Quadrupole Method

Flash thermography has been shown to be an effective method for detection of delaminations in carbon fiber reinforced polymer (CFRP) composite structures. Improved understanding of the limitations of the technique can be obtained by simulating the inspection process. Time domain finite difference and finite element methods are well suited for such simulations but can be computationally intensive. An alternate method is to solve the Laplace transform of the heat equation, then invert the Laplace transform to produce a time domain response. Often this is referred to as the thermal quadrupole method and is well suited for simulating flash thermography. The quadrupole method has been used extensively for simulating one-dimensional heat flow in multilayer systems with contact resistances at the interfaces. It is also applicable for three dimensional configurations, in particular for simulation of changes in thermographic response due to delaminations in composites. This presentation discusses three-dimensional simulations with realistic shapes and contact resistances at the interfaces between layers. The results of these simulations are compared to thermography measurements on composites specimens with impact induced delaminations.

thermography↗

NASA NTRSDate not supplied

Realistic Thermographic Simulation of Impact Damage with Quadrupole Method

Flash thermography has been shown to be an effective method for detection of delaminations in carbon fiber reinforced polymer (CFRP) composite structures. Improved understanding of thelimitations of the technique can be obtained by simulating the inspection process. Time domainfinite difference and finite element methods are well suited for such simulations but can be computationally intensive. An alternate method is to solve the Laplace transform of the heat equation, then invert the Laplace transform to produce a time domain response. Often this is referred to as the thermal quadrupole method and is well suited for simulating flash thermography. The quadrupole method has been used extensively for simulating one-dimensional heat flow in multilayer systems with contact resistances at the interfaces. It is also applicable for three dimensional configurations, in particular for simulation of changes in thermographic response due to delaminations in composites. This presentation discusses three-dimensional simulations with realistic shapes and contact resistances at the interfaces between layers. The results of these simulations are compared to thermography measurements on composites specimens with impact induced delaminations.

Thermography↗

NASA NTRS2001

Low Temperature Ohmic Contact Formation of Ni2Si on N-type 4H-SiC and 6H-SiC

Nickel Silicide (Ni2Si) is investigated as possible ohmic contact to heavily nitrogen-doped N-type 4H-SiC and 6H-SiC. Nickel Silicide was deposited via electron gun with various thicknesses on both Si and C faces of the SiC substrates. The Ni2Si contacts were formed at room temperature as well as at elevated temperatures (400 to 1000 K). Contact resistivities and I-V characteristics were measured at temperatures between 100 and 700 C. To investigate the electric properties, I-V characteristics were studied and the Transmission Line Method (TLM) was used to determine the specific contact resistance for the samples at each annealing temperature. Both Rutherford Backscattering Spectroscopy (RBS) and Auger Electron Spectroscopy (AES) were used for depth profiling of the Ni2Si, Si, and C. X-ray Photoemission Spectroscopy (XPS) was used to study the chemical structure of the Ni2Si/SiC interface.

Elsamadicy, A. M.↗

NASA NTRS1985

Effects of cooling system parameters on heat transfer in PAFC stack

Analytical and experimental study for the effects of cooling system parameters on the heat transfer and temperature distribution in the electrode plates of a phosphoric acid fuel-cell has been conducted. An experimental set-up that simulates the operating conditions prevailing in a phosphoric-acid fuel-cell stack was designed and constructed. The set-up was then used to measure the overall heat transfer coefficient, the thermal contact resistance, and the electrode temperature distribution for two different cooling plate configurations. Two types of cooling plate configurations, serpentine and straight, were tested. Air, water, and oil were used as coolants. Measurements for the heat transfer coefficient and the thermal contact resistance were made for various flow rates ranging from 16 to 88 Kg/hr, and stack clamping pressure ranging from O to 3448 Kpa. The experimental results for the overall heat transfer coefficient were utilized to derive mathematical relations for the overall heat transfer coefficient as a function of stack clamping pressure and Reynolds number for the three coolants. The empirically derived formulas were incorporated in a previously developed computer program to predict electrodes temperature distribution and the performance of the stack cooling system. The results obtained were then compared with those available in the literature. The comparison showed maximum deviation of +/- 11%.

Abdul-Aziz, Ali A.↗

NASA NTRS1981

Interfacial temperatures and surface heat fluxes during a blade-seal rubbing process

A thermal analysis was made of a blade-seal configuration to determine the effects of thermal contact resistance, blade speed, and thermal properties upon the interfacial temperature. The analysis disclosed that while the thermal properties of the blade or the seal specimen strongly affect the temperatures in their respective parts, the factors which control the overall temperature field are the contact resistance and the heat generated at the interface.

Emery, A. F.↗