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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS1998

Analysis of Phase Separation in Czochralski Grown Single Crystal Ilmenite

Ilmenite (FeTiOs) is a wide bandgap semiconductor with an energy gap of 2.58 eV. Ilmenite has properties suited for radiation tolerant applications, as well as a variety of other electronic applications. Single crystal ilmenite has been grown from the melt using the Czochralski method. Growth conditions have a profound effect on the microstructure of the samples. Here we present data from a variety of analytical techniques which indicate that some grown crystals exhibit distinct phase separation during growth. This phase separation is apparent for both post-growth annealed and unannealed samples. Under optical microscopy, there appear two distinct areas forming a matrix with an array of dots on order of 5 pm diameter. While appearing bright in the optical micrograph, atomic force microscope (AFM) shows the dots to be shallow pits on the surface. Magnetic force microscope (MFM) shows the dots to be magnetic. Phase identification via electron microprobe analysis (EMPA) indicates two major phases in the unannealed samples and four in the annealed samples, where the dots appear to be almost pure iron. This is consistent with micrographs taken with a scanning probe microscope used in the magnetic force mode. Samples that do not exhibit the phase separation have little or no discernible magnetic structure detectable by the MFM.

Wilkins, R.↗
NASA NTRS2005

MOVPE of GaSb/InGaAsSb Multilayers and Fabrication of Dual Band Photodetectors

Metalorganic vapor phase epitaxy (MOVPE) of GaSb/InGaAsSb multilayer thin films and fabrication of bias-selectable dual band photodetectors are reported. For the dual band photodetectors the short wavelength detector, or the upper p- GaSb/n-GaSb junction photodiode, is placed optically ahead of the long wavelength one, or the lower photodiode. The latter is based on latticed-matched In0.13Ga0.87As0.11Sb0.89 with bandgap near 0.6 eV. Specifically, high quality multilayer thin films are grown sequentially from top to bottom as p+-GaSb/p-GaSb/n-GaSb/n-InGaAsSb/p-InGaAsSb/p-GaSb on undoped p-type GaSb substrate, and as n-GaSb/p-GaSb/p-InGaAsSb/n-InGaAsSb/n-GaSb on Te-doped n-type GaSb substrate respectively. The multilayer thin films are characterized by optical microscope, atomic force microscope (AFM), electron microprobe analyses etc. The photodiode mesa steps are patterned by photolithography with wet chemical etching and the front metallization is carried out by e-beam evaporation with Pd/Ge/Au/Ti/Au to give ohmic contact on both n- and p-type Sb based layer surfaces. Dark I-V measurements show typical diode behavior for both the upper and lower photodiodes. The photoresponsivity measurements indicate that both the upper and lower photodiodes can sense the infrared illumination corresponding to their cutoff wavelengths respectively, comparable with the simulation results. More work is underway to bring the long wavelength band to the medium infrared wavelength region near 4 micrometers.

Xiao, Ye-Gao↗
NASA NTRS2010

NASA Tech Briefs, April 2010

Topics covered include: Active and Passive Hybrid Sensor; Quick-Response Thermal Actuator for Use as a Heat Switch; System for Hydrogen Sensing; Method for Detecting Perlite Compaction in Large Cryogenic Tanks; Using Thin-Film Thermometers as Heaters in Thermal Control Applications; Directional Spherical Cherenkov Detector; AlGaN Ultraviolet Detectors for Dual-Band UV Detection; K-Band Traveling-Wave Tube Amplifier; Simplified Load-Following Control for a Fuel Cell System; Modified Phase-meter for a Heterodyne Laser Interferometer; Loosely Coupled GPS-Aided Inertial Navigation System for Range Safety; Sideband-Separating, Millimeter-Wave Heterodyne Receiver; Coaxial Propellant Injectors With Faceplate Annulus Control; Adaptable Diffraction Gratings With Wavefront Transformation; Optimizing a Laser Process for Making Carbon Nanotubes; Thermogravimetric Analysis of Single-Wall Carbon Nanotubes; Robotic Arm Comprising Two Bending Segments; Magnetostrictive Brake; Low-Friction, Low-Profile, High-Moment Two-Axis Joint; Foil Gas Thrust Bearings for High-Speed Turbomachinery; Miniature Multi-Axis Mechanism for Hand Controllers; Digitally Enhanced Heterodyne Interferometry; Focusing Light Beams To Improve Atomic-Vapor Optical Buffers; Landmark Detection in Orbital Images Using Salience Histograms; Efficient Bit-to-Symbol Likelihood Mappings; Capacity Maximizing Constellations; Natural-Language Parser for PBEM; Policy Process Editor for P(sup 3)BM Software; A Quality System Database; Trajectory Optimization: OTIS 4; and Computer Software Configuration Item-Specific Flight Software Image Transfer Script Generator.

Source record↗
NASA NTRS1992

Optical emission generated by collisions of 5 eV O(3P) atoms with surface-absorbed hydrazine

Optical emission has been observed corresponding to vibrational bands in the NH (A 3Pi - X 3Sigma(-)) electronic transition during collisions of 5 eV, ground-state oxygen O(3P) atoms with MgF2 and Ni surfaces continuously exposed to a beam of hydrazine (N2H4). The NH emission intensity is observed to be about five times greater for MgF2 than for Ni. No dependence on temperature was observed for either surface in the range 240 - 340 K, implying that the NH-producing intermediate species is tightly bound. The half-lifetime for desorption of hydrazine from each surface was measured. This was found to be 120 min for the MgF2 surface at 240 K, and less than 20 min for Ni. After exposure, the surface composition was measured using X-ray photoelectron spectroscopy on the exposed and unexposed areas of both targets.

Orient, O. J.↗
DOE OSTI2022

Direct current in a stirred optical lattice

We study how the energy dispersion of bosonic atoms loaded into an optical lattice becomes modified due to periodic circular stirring of the lattice to the second order in the strength of stirring. If the lattice breaks mirror symmetry, the bosonic atoms may acquire a nonzero group velocity at the center of the Brillouin zone and produce a nonzero direct current. Furthermore, this effect is similar to the circular photogalvanic effect in solid-state physics. It can be used to transport neutral bosonic atoms in an optical lattice over a given distance in an arbitrary direction. However, when the drive frequency is detuned to avoid resonant transitions with energy absorption, we argue that the induced current is not persistent, but transient. An experimental study of the relaxation of the induced current can provide insight about equilibrization in driven systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1986

Effects on optical systems from interactions with oxygen atoms in low earth orbits

Modifications of material surface properties due to interactions with ambient atomic oxygen have been observed on surfaces facing the orbital direction in low earth orbits. Some effects are very damaging to surface optical properties while some are more subtle and even beneficial. Most combustible materials are heavily etched, and some coatings, such as silver and osmium, are seriously degraded or removed as volatile oxides. The growth of oxide films on metals and semiconductors considered stable in dry air was measured. Material removal, surface roughness, reflectance, and optical densities are reported. Effects of temperature, contamination, and overcoatings are noted.

Peters, P. N.↗
DOE OSTI2023

Scalable photonic integrated circuits for high-fidelity light control

Advances in laser technology have driven discoveries in atomic, molecular, and optical (AMO) physics and emerging applications, from quantum computers with cold atoms or ions, to quantum networks with solid-state color centers. This progress is motivating the development of a new generation of optical control systems that can manipulate the light field with high fidelity at wavelengths relevant for AMO applications. These systems are characterized by criteria: (C1) operation at a design wavelength of choice in the visible (VIS) or near-infrared (IR) spectrum, (C2) a scalable platform that can support large channel counts, (C3) high-intensity modulation extinction and (C4) repeatability compatible with low gate errors, and (C5) fast switching times. Here, we provide a pathway to address these challenges by introducing an atom control architecture based on VIS-IR photonic integrated circuit (PIC) technology. Based on a complementary metal–oxide–semiconductor fabrication process, this atom-control PIC (APIC) technology can meet system requirements (C1)–(C5). As a proof of concept, we demonstrate a 16-channel silicon-nitride-based APIC with (5.8±0.4)ns response times and >30dB extinction ratio at a wavelength of 780 nm.

Menssen, Adrian J.↗
NASA NTRS1993

Theoretical model for a Stark anomalous dispersion optical filter

A theoretical model for the first atomic Stark anomalous dispersion optical filter is reported. The results show the filter may serve as a widely tunable narrow bandwidth and high throughput optical filter for freespace laser communications and remote sensing.

Yin, B.↗
DOE OSTI2022

Ultra-low loss visible light waveguides for integrated atomic, molecular, and quantum photonics

Atomic, molecular and optical (AMO) visible light systems are the heart of precision applications including quantum, atomic clocks and precision metrology. As these systems scale in terms of number of lasers, wavelengths, and optical components, their reliability, space occupied, and power consumption will push the limits of using traditional laboratory-scale lasers and optics. Visible light photonic integration is critical to advancing AMO based sciences and applications, yet key performance aspects remain to be addressed, most notably waveguide losses and laser phase noise and stability. Additionally, a visible light integrated solution needs to be wafer-scale CMOS compatible and capable of supporting a wide array of photonic components. While the regime of ultra-low loss has been achieved at telecommunication wavelengths, progress at visible wavelengths has been limited. Here, we report the lowest waveguide losses and highest resonator Qs to date in the visible range, to the best of our knowledge. We report waveguide losses at wavelengths associated with strontium transitions in the 461 nm to 802 nm wavelength range, of 0.01 dB/cm to 0.09 dB/cm and associated intrinsic resonator Q of 60 Million to 9.5 Million, a decrease in loss by factors of 6x to 2x and increase in Q by factors of 10x to 1.5x over this visible wavelength range. Additionally, we measure an absorption limited loss and Q of 0.17 dB/m and 340 million at 674 nm. This level of performance is achieved in a wafer-scale foundry compatible Si 3 N 4 platform with a 20 nm thick core and TEOS-PECVD deposited upper cladding oxide, and enables waveguides for different wavelengths to be fabricated on the same wafer with mask-only changes per wavelength. These results represent a significant step forward in waveguide platforms that operate in the visible, opening up a wide range of integrated applications that utilize atoms, ions and molecules including sensing, navigation, metrology and clocks.

Chauhan, Nitesh↗
DOE OSTI2024

An integrated atom array-nanophotonic chip platform with background-free imaging

Arrays of neutral atoms trapped in optical tweezers have emerged as a leading platform for quantum information processing and quantum simulation due to their scalability, reconfigurable connectivity, and high-fidelity operations. Individual atoms are promising candidates for quantum networking due to their capability to emit indistinguishable photons that are entangled with their internal atomic states. Integrating atom arrays with photonic interfaces would enable distributed architectures in which nodes hosting many processing qubits could be efficiently linked together via the distribution of remote entanglement. However, many atom array techniques cease to work in close proximity to photonic interfaces, with atom detection via standard fluorescence imaging presenting a major challenge due to scattering from nearby photonic devices. Here, we demonstrate an architecture that combines atom arrays with up to 64 optical tweezers and a millimeter-scale photonic chip hosting more than 100 nanophotonic cavities. We achieve high-fidelity ( ~ 99.2%), background-free imaging in close proximity to nanofabricated cavities using a multichromatic excitation and detection scheme. The atoms can be imaged while trapped a few hundred nanometers above the dielectric surface, which we verify using Stark shift measurements of the modified trapping potential. Finally, we rearrange atoms into defect-free arrays and load them simultaneously onto the same or multiple devices.

74 ATOMIC AND MOLECULAR PHYSICS↗