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174 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Technology Maturation of Wireless Harsh Environment Sensors For Improved Condition Based Monitoring Of Coal Fired Power Generation

The overall goal of this project was to demonstrate and develop the usage of high-temperature (HT) harsh-environment (HE) wireless surface acoustic wave resonator (SAWR) sensor technology to promote reliable maintenance through condition-based maintenance (CBM) for field applications in harsh service conditions associated with power plant environments. The project aimed to advance the HT HE wireless SAWR sensor technology from TRL 5 to TRL 7. In addition to HT HE wireless temperature sensing, efforts were dedicated during this project to investigate, develop and increase the TRL from 3 to 5 for the following technologies: (a) HT HE strain sensors to address additional CBM monitoring needs, such as boiler tube mechanical / thermal stresses, which can provide early indications for boiler tube cracking and failure; and (b) HT aluminum nitride (AlN) and scandium aluminum nitride (ScAlN) based piezoelectric thin film fabrication and implementation of SAW sensors, with the goal of releasing the need to use single crystal piezoelectric materials for SAWRs and thus broaden possible technology applications to non-planar and harder to modify surfaces. To achieve the goals mentioned above, UMaine and its partner, Environetix Technologies Corporation, established partnerships with the following power plants: Longview Power (Maidsville, WV), a coal-fired power plant; Penobscot Energy Recovery Corp (PERC, Orrington, ME), a waste-to-energy power plant; and the UMaine Steam Plant (Orono, ME), an oil / natural gas power plant. To realize wireless HT HE SAWR sensor systems in these harsh service conditions, the University of Maine research team worked with Environetix and these power plants to define, design, fabricate, test and validate a mature prototype wireless temperature SAWR sensor system for boiler tube applications within the HT HE of the reheater pass damper chamber to directly and wirelessly monitor the temperature at eighteen independent boiler tube locations. The system included three levels, or “tiers”, of wireless communication to enable remote monitoring: Tier 1, the wireless link in the reheater pass damper chamber directly accessing the sensors on the boilers; Tier 2, the wireless local area network link, transmitting processed sensor information within the power plant to the Tier 3, a commercial wireless signal carrier company for secure remote data monitoring outside of the power plant. Regarding the wireless sensor system installed at Longview Power, temperature information from the boilers was continuously transmitted from the Longview boilers at Maidsville, WV, to Environetix headquarters, Orono, ME, over a 34 month period, when the system was finally decommissioned. Strain sensors and piezoelectric ScAlN thin film sensors were successfully installed on the exhaust duct at the UMaine Steam Power plant. The advances in wireless strain sensors and thin film piezoelectric film fabrication and testing were performed mostly in UMaine laboratories and field tested at the UMaine Steam Plant, due to its close proximity to UMaine/Environetix, access to the plant facility, and due to difficulties in accessing the other power plants during the COVID shut-down period. The project accomplished the TRL level increase of the targeted CBM technologies through the successful fabrication, installation, test, and validation of dedicated and commercial wireless sensor systems, utilizing the three different power plants. The outcomes of this project, including the wireless sensor data capability, are expected to yield an advance for CBM in harsh power plant environments. The reduction of maintenance costs, improved safety during plant operation, and increased power plant efficiency will lead to increased revenues (i.e., fewer forced outages) due to better process monitoring enabled by the wireless HT HE SAWR temperature sensor technology.

20 FOSSIL-FUELED POWER PLANTS↗
DOE OSTI2022

ARPA-E PNDIODES "PN Junctions by Ion Implantation" Project (Final Report)

Electricity accounts for nearly 40% of the energy generated in the United States, of which 65% is lost to electrical system inefficiency before reaching end-use sectors. Power electronics will play a growing role in this distribution and end-use, with up to 80% of electricity estimated to pass through power electronics from generation to consumption by 2030. This gives technical improvements in power electronics enormous potential to drive efficiency gains throughout the U.S. economy. Current Si-based power architectures including MOSFETs and IGBTs are limited by high losses, low switching frequency, and poor high-temperature performance. Given the material properties of GaN, devices can exhibit a given turn-on resistance and breakdown voltage with a minute fraction of the area of a Si device—all with higher switching speeds. While n-type doping of III-nitrides has reached a high level of maturity and integration into commercialized products, p-type doping presents distinct challenges that requires continued research. The success of the next generation of GaN-based power devices depends in large part on the ability to form selective-area p-type regions, which can be accomplished by ion implantation of the prevailing acceptor dopant, Mg. This approach is relatively inexpensive and is a fab-ready processing step for creation of current-generation power electronic devices including BJTs, IGBTs, and diode rectifiers. However, ion implantation induces lattice damage and creates point defects within the material, which negatively impacts dopant activation annealing. These forms of damage may be removed by high-temperature annealing, however short annealing time and higher pressures are required to prevent decomposition of the material. We approach this challenge through an innovative combination of approaches toward obtaining high-conductivity p-type GaN. By the novel employment of a gyrotron, a microwave source that can be shaped into a highly localized beam to dissipate very high power in a semiconductor target, a wafer of GaN can be annealed in short (<2 s) ‘pulses’ at temperatures of 1450 °C (2640 °F) to achieve p-type activation without appreciable surface degradation. The p-type activation of Mg-implanted GaN can be further aided by co-implantation with N, believed to enhance the removal of point defects that compensate the acceptors dopant. Elevation to such high temperatures for even a short time induces degradation of GaN-to overcome, we have implemented additional measures to retain high-quality crystalline GaN while removing implant damage and activating Mg dopant. A bilayer cap of AlN is deposited by a combination of chemical and physical vapor deposition to protect the GaN surface. To prevent decomposition of GaN loss of N during annealing, a custom vessel—to contain pressurized N while allowing injection of microwave energy—is employed. By detailed study of the interaction of various measures that are implemented to protect the sample surface (GaN), activate the implanted dopants, and mitigate damage of the lattice heating damage during annealing, we are able to achieve p-type GaN and observe recovery of the crystal and removal of substantial density of defects created during the implantation process.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Exploring the Limits of Cooling for Extreme Heat Flux Applications: Data Centers and Power Electronic

We developed an Extreme Heat Flux Micro-cooler (EHFµ-C) capable of removing heat flux of ~1 kW/cm 2 with a small temperature rise ~10°C. This represents greater than 10× reduction in thermal resistance compared to the state-of-the-art single-phase cooling technologies (~0.5 cm 2 -°C/W) that greatly increases the efficiency, resulting in improved performance and reliability for microprocessors and power electronics. The EHFµ-Cooler utilizes liquid wicking (no pump) and thin-film evaporation in a 30 µm thick wick porous microstructure such as copper inverse opal (CIO), silicon and AlN pin fins along with a 3D manifold (copper wiremesh and silicon) with liquid routing and vapor extraction channels achieving an unprecedented vapor quality ~ >0.9. The proposed EHFµ-Cooler significantly reduces device temperature, resulting in 25-50% improvement in reliability and device performance. Based on very conservative estimates, the total energy saving for data centers due to improved performance can be 6 billion kWh/year (>$300M). Better cooling, leading to more efficient, higher performance and more reliable power electronics, would save the nation 3 Quad of primary energy in 2030. Just for automotive application, a 10% increase in fuel efficiency for SiC-based power electronics equates to >20 million gallons of fuel savings annually. The proposed EHFµ-Cooler technology ensures the United States maintains its technological lead in high-performance computing and high-power electronics, while at the same time improving the energy efficiency, and as a result reducing energy-related emissions such as greenhouse gases.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2023

High-Temperature Oxidation Behavior of FeCoCrNi+(Cu/Al)-Based High-Entropy Alloys in Humid Air

Previous studies showed some transition metal high-entropy alloy (HEA) compositions can have good oxidation resistance in air up to 800 °C. Four equiatomic HEAs have been developed based on FeCoCrNi with additions of Mn, Cu, Al or Al+Cu. The oxidation behavior of these HEAs was compared in humid (10 vol.% H2O) air at 800 °C for 100–500 h to investigate the influence of water vapor on the oxidation mechanisms. The Cu- and Al-containing alloys exhibited improved oxidation resistance over the Mn composition. For the Cu-containing alloy, a local attack of the Cu-rich phase was observed, which formed an Fe/Ni/Co/Cr spinel that was surrounded by Cr2O3. This oxide was thicker for the humid air atmosphere when compared to dry air, and the transition of the Cu oxide to the spinel was accelerated. The Al-containing HEA formed a thin Al2O3 scale with humidity suppressing AlN formation and forming a smoother oxide layer. The Al+Cu composition had the highest overall oxidation resistance (minimal local attack, no nitridation) and also showed a smooth oxide scale topography under humid air oxidation as opposed to a plate-like, rougher scale under dry air.

Crystallography↗
DOE OSTI2024

Elastic Modulus Measurement at High Temperatures for Miniature Ceramic Samples Using Laser Micro-Machining and Thermal Mechanical Analyzer

In this paper, we demonstrate a method of measuring the flexural elastic modulus of ceramics at an intermediate (~millimeter) scale at high temperatures. We used a picosecond laser to precisely cut microbeams from the location of interest in a bulk ceramic. They had a cross-section of approximately 100 μm × 300 μm and a length of ~1 cm. They were then tested in a thermal mechanical analyzer at room temperature, 500 °C, 800 °C, and 1100 °C using the four-point flexural testing method. We compared the elastic moduli of high-purity Al2O3 and AlN measured by our method with the reported values in the literature and found that the difference was less than 5% for both materials. This paper provides a new and accurate method of characterizing the high-temperature elastic modulus of miniature samples extracted from representative/selected areas of bulk materials.

Chemistry↗
DOE OSTI2025

Rapid Screening of Liquid Metal Wetting for a Materials Compatibility Library

Wetting behavior of molten metals on solid substrates is a critical phenomenon influencing numerous industrial applications, including welding, anti-corrosion coatings, and metal additive manufacturing (AM). In particular, molten metal jetting (MMJ), an emerging AM technology, requires that the molten metal remain pinned at the nozzle exit. Thus, each new metal requires a specific nozzle material to ensure consistent droplet ejection and deposition, making it important to rapidly identify the appropriate wetting combinations. However, traditional measurements of wetting angles require expensive equipment and only allow one combination of materials to be investigated at a time which can be time consuming. This work introduces a rapid screening method based on sessile droplet experiments to evaluate wetting profiles across multiple metal–substrate combinations simultaneously. This study investigates the wetting interactions of molten Al alloy (Al4008), Cu, and Sn on various ceramic and metal substrates to identify optimal material combinations for MMJ nozzle designs. Results demonstrate that Al4008 achieves wetting on ceramic substrates such as AlN, TiO 2 , and SiC, with varying mechanisms including chemical reactions and weak surface interactions. Additionally, theoretical predictions regarding miscibility gaps and melting point differences were verified for Cu and Sn on refractory metals like Mo and W. Findings from this study contribute to the establishment of a materials compatibility library, enabling the selection of wetting/non-wetting combinations for stable MMJ operation. This resource not only advances MMJ technologies but also provides valuable insights for broader applications such as welding, coating, and printed electronics.

Materials science↗
DOE OSTI2023

Tailoring Growth Interfaces of Virtual Substrates for Power Electronics

Power electronics materials are poised to play a critical role in fulfilling next generation energy needs, with up to 90% of future energy demand predicted to flow through power electronics at some point.[1] Among a number of candidate materials, AlxGa1-xN is the strongest, having bipolar dopability, thermal and chemical stability, an ultra-wide bandgap, and demonstrated experimental feasibility. However, AlGaN growth is limited by a lack of lattice-matched substrates, ultimately stunting material quality at higher thicknesses needed for power electronics applications. Further, high power applications increasingly call for fully vertical device structures, necessitating a conductive substrate. [1] Recently our group identified the (111) plane of TaC as a conductive surface lattice-matched to Al0.55Ga0.45N, taking inspiration from prior work of AlN and GaN binaries on carbide and boride substrates. [2,3,4] In this talk we demonstrate the growth of (111)-oriented TaC by RF sputtering. We investigate the interface of TaC with sapphire and SiC substrates and identify means to suppress competing Ta2C nucleation in order to stabilize (111)-oriented TaC. Potential stacking sequences are identified with respect to crystal structure and observed twinning in the TaC films. We next assess structural changes and film recrystallization that results from face-to-face annealing of TaC thin films at high temperatures above 1500 degrees Celsius. Changes to grain structure and domain size are assessed by x-ray diffraction and surface morphology is explored using atomic force microscopy. Figure 1 shows significant improvements to in- and out-of-plane strain following annealing along with the formation of terraced step edges at the film surface. Strain as a function of material composition and thickness is considered, as this may play a major role in future nucleation of AlGaN layers.

CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SU↗
DOE OSTI2024

Tailoring Growth Interfaces of Virtual Substrates for Power Electronics

Power electronics materials are poised to play a critical role in fulfilling next generation energy needs, with up to 90% of future energy demand predicted to flow through power electronics at some point. AlxGa1-xN ranks high among candidate materials, having bipolar dopability, thermal and chemical stability and an ultra-wide bandgap. However, AlGaN growth is limited by a lack of lattice-matched substrates, ultimately stunting material quality at higher thicknesses needed for power electronics applications. Further, high power applications increasingly call for fully vertical device structures, necessitating a conductive substrate. Recently our group identified the (111) plane of TaC as a conductive surface lattice-matched to Al0.55Ga0.45N, taking inspiration from prior work of AlN and GaN binaries on carbide and boride substrates. In this talk we demonstrate the growth of (111)-oriented TaC by RF sputtering. We investigate the interface of TaC with sapphire and SiC substrates and identify means to suppress competing Ta2C nucleation in order to stabilize (111)-oriented TaC. Potential stacking sequences are identified with respect to crystal structure and observed twinning in the TaC films. We next assess structural changes and film recrystallization that results from face-to-face annealing of TaC thin films at high temperatures above 1500 degrees C. Changes to grain structure and domain size are assessed by x-ray diffraction and surface morphology is explored using atomic force microscopy. Figure 1 shows significant improvements to in- and out-of-plane strain following annealing along with the formation of terraced step edges at the film surface. Strain as a function of material composition and thickness is considered, as this may play a major role in future nucleation of AlGaN layers. (1) R. J. in a face-to-face configuration, as illustrated in the schematic at left. Kaplar et al 2017, ECS J. Solid State Sci. Technol. 6 Q3061; (2) D. M. Roberts et al 2022, https://arxiv.org/abs/2208.11769; (3) T. Aizawa et al 2008, J Crys Growth 310, 1 22; (4) R. Liu et al 2002, Appl. Phys. Lett. 81, 3182-3184.

ENGINEERING↗
DOE OSTI2024

An Organic, Direct Bonded Copper, Multi-Layered, Ultra-Low Inductance Package for High-Power UWBG MOSFETs

The most common metalized substrates used in high-power switching packages consist of a ceramic layer such as Aluminum Nitride (AlN) sandwiched between two copper layers. Ceramic substrates are used because it has the key characteristic of having high dielectric strength while being thermally conductive. A large drawback to ceramic substrates is that they do not allow for a multi-layered circuit design. By replacing the traditional ceramic substrate with organic direct bonded copper (ODBC) we can open a wide range of possibilities when it comes to power module layout such as multi-layered circuits and double-sided cooling. Both benefits are critical while packaging high-performance Gallium Oxide (Ga2O3) MOSFETs. Because of Ga2O3's relatively poor thermal conductivity, a double-sided cooled package becomes necessary. Therefore, the use of ODBC provides the flexibility to fabricate copper traces carrying much higher currents, and by creating a multi-layered package, we can drastically reduce the parasitic inductance inside the power module. Achieving lower parasitic inductance is critical for an ultra-fast Ga2O3 package to avoid excessive voltage overshoot and ringing. Using ODBC, we have designed novel packages capable of handling the challenges presented by fast Ga2O3 switching. Using multi-physics modeling software, we can validate our design before building the prototype. Due to the simple process parameters needed to work with ODBC, we can rapidly create prototypes without using external vendors. This flexibility allows us to quickly design, build, and validate highly complex switching power modules to accommodate next generation, Ga2O3 switching devices.

ADVANCED PROPULSION SYSTEMS,ENGINEERING↗
DOE OSTI2025

Domain Nucleation and Growth in an Epitaxially Grown Wurtzite Ferroelectric

Ferroelectric domain nucleation and growth in epitaxial (Al, B, Sc)N films grown on n-GaN substrates are explored using a combination of ferroelectric property measurements and scanning transmission electron microscopy, including novel in situ switching studies. The films are electrically switched to nitrogen-polar (N-polar) and metal-polar (M-polar) configurations, attaining a remanent polarization of 120 µC cm −2 with coercive fields of ≈6 MV cm −1 . In the initial switching cycle, the ferroelectric domains nucleate near the bottom n-GaN electrode and develop domain walls with zigzag morphologies, while residual “dead layers” that do not switch from the as-deposited orientation persist at the top and bottom electrodes. The in situ microscopy experiments reveal that domain walls propagate fastest in the lateral direction, parallel to the electrode/film interface. These findings provide insights into the domain dynamics and structural evolution of wurtzite ferroelectrics, offering implications for next-generation electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Reduced coercive field in epitaxial thin film of ferroelectric wurtzite Al 0.7 Sc 0.3 N

Epitaxial ferroelectric wurtzite films exhibiting clear polarization-electric field hysteresis behavior are presented. The coercive field of this epitaxial Al 0.7 Sc 0.3 N film on the W/c-sapphire substrate is 0.4±0.3 MV cm -1 (8%) smaller than that of a conventional fiber textured film on a Pt/TiO x /SiO 2 /Si substrate, attributed to the 0.01±0.007 Å smaller c-axis lattice parameter in the epitaxial film. The strain and decrease in the coercive field most likely originate from epitaxial strain rather than the mismatch in the thermal coefficient of expansion. These results provide insight for further coercive field reduction of wurtzite ferroelectrics using epitaxial mismatch strain.

36 MATERIALS SCIENCE↗