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The AMO efficiencies (no anti-reflection coating) obtained to date are 2.5% for solar cells deposited on graphite substrates, 3.5% for solar cells deposited on metallurgical silicon substrates, and 4.5% for solar cells fabricated from purified metallurgical silicon.
The Schottky barrier photovoltaic converter is suggested as an alternative to the p/n junction photovoltaic devices for the conversion of laser energy to electrical energy. The structure, current, output, and voltage output of the Schottky device are summarized. The more advanced concepts of the multilayer Schottky barrier cell and the AMOS solar cell are briefly considered.
The growth and characteristics of edge defined, film fed grown (EFG) silicon ribbons are discussed. Factors involved in the growth of continuous lengths of 1 in. wide ribbons are examined. The structural and electrical characteristics of the ribbons have been studied and the results are presented. Solar cells have been fabricated using the ribbon crystals and typical AMO efficiencies of 6 to 10% have been realized.
Shallow junctions, aluminum back surface fields and tantalum pentoxide (Ta205) antireflection coatings coupled with the development of a chromium-palladium-silver contact system, were used to produce a 2 x 4 cm wraparound contact silicon solar cell. One thousand cells were successfully fabricated using batch processing techniques. These cells were 0.020 mm thick, with the majority (800) made from nominal ten ohm-cm silicon and the remainder from nominal 30 ohm-cm material. Unfiltered, these cells delivered a minimum AMO efficiency at 25 C of 11.5 percent and successfully passed all the normal in-process and acceptance tests required for space flight cells.
An analysis of estimated costs indicate that for an annual output of 4,747,000 hexagonal cells (38 mm. on a side) a total factory cost of $0.866 per cell could be achieved. For cells with 14% efficiency at AMO intensity (1353 watts per square meter), this annual production rate is equivalent to 3,373 kilowatts and a manufacturing cost of $1.22 per watt of electrical output. A laboratory model of such a facility was operated to produce a series of demonstration runs, producing hexagonal cells, 2 x 2 cm cells and 2 x 4 cm cells.
Single crystal silicon p-n junction solar cells made with low resistivity substrates show poorer solar energy conversion efficiency than traditional theory predicts. The physical mechanisms responsible for this discrepancy are identified and characterized. The open circuit voltage in shallow junction cells of about 0.1 ohm/cm substrate resistivity is investigated under AMO (one sun) conditions.
Errors in short circuit current measurement were calculated for a variety of spectral mismatch conditions. The differences in spectral irradiance between terrestrial sunlight and three types of solar simulator were studied, as well as the differences in spectral response between three types of reference solar cells and various test cells. The simulators considered were a short arc xenon lamp AMO sunlight simulator, an ordinary quartz halogen lamp, and an ELH-type quartz halogen lamp. Three types of solar cells studied were a silicon cell, a cadmium sulfide cell and a gallium arsenide cell.
A quick method for checking solar simulator spectra content is presented. The method is based upon a solar cell of extended spectral sensitivity and known absolute response, and a dichroic mirror with the reflection transmission transition close to the peak wavelength of the Thekaekara AMO distribution. It compromises the need for spectral discrimination with the ability to integrate wide spectral regions of the distribution which was considered important due to the spiky nature of the high pressure xenon lamp in common use. The results are expressed in terms of a single number, the blue/red ratio, which, combined with the total (unfiltered) output, provides a simple adequate characterization. Measurements were conducted at eleven major facilities across the country and a total of eighteen simulators were measured including five pulsed units.
The development of a process for fabricating 2 x 4 cm back surface field silicon solar cells having screen printed wraparound contacts is described. This process was specifically designed to be amenable for incorporation into the automated nonvacuum production line. Techniques were developed to permit the use of screen printing for producing improved back surface field structures, wraparound dielectric layers, and wraparound contacts. The optimized process sequence was then used to produce 1852 finished cells. Tests indicated an average conversion efficiency of 11% at AMO and 28 C, with an average degradation of maximum power output of 1.5% after boiling water immersion or thermal shock cycling. Contact adherence was satisfactory after these tests, as well as long term storage at high temperature and high humidity.
A significant advancement in the development of thin high efficiency wraparound contact silicon solar cells has been made by coupling space and terrestrial processing procedures. Although this new method for fabricating cells has not been completely reduced to practice, some of the initial cells have delivered over 20 mW/sq cm when tested at 25 C under AMO intensity. This approach not only yields high efficiency devices, but shows promise of allowing complete freedom of choice in both the location and size of the wraparound contact pad area
Recent parametric studies of alternate SPS design concepts have shown that the concept appears technically feasible. The parametric studies were based on the use of advanced technology silicon solar cells for solar energy conversion. Solar array blanket unit masses of 0.31 to 0.46 kg/sq m were investigated. Conversion efficiencies of 15 to 17 percent air mass zero (AMO at 247 K) with a concentration ratio of two were considered. The systems were sized for a ground power output of 10 GW. To the level of detail studied, no design or operational problems were encountered that did not appear amenable to solution; however, the economic viability of the SPS concepts studied is obviously dependent upon a combination of technology advancement and/or the costs of competitive sources.
Several oxidation techniques are discussed which have been found to increase the open circuit (V sub oc) of metal-GaAs Schottky barrier solar cells, the oxide chemistry, attempts to measure surface state parameters, the evolving characteristics of the solar cell as background contamination (has been decreased, but not eliminated), results of focused Nd/YAG laser beam recrystallization of Ge films evaporated onto tungsten, and studies of AMOS solar cells fabricated on sliced polycrystalline GaAs wafers. Also discussed are projected materials availability and costs for GaAs thin-film solar cells.
A significant advancement in the development of thin high efficiency wraparound contact silicon solar cells has been made by coupling space and terrestrial processing procedures. Although this new method for fabricating cells has not been completely reduced to practice, some of the initial cells have delivered over 20 mW/sq cm when tested at 25 C under AMO intensity. This approach not only yields high efficiency devices, but shows promise of allowing complete freedom of choice in both the location and size of the wraparound contact pad area.
Non-reflective vertical junction silicon cells provide high conversion efficiency radiation-resistant solar cells. New techniques of oxidation growth and the use of photolithography enable the use of an orientation dependent etch producing grooves 5 to 10 microns wide over 100 microns deep. These silicon wafers are then processed into solar cells with all of the processes performed at temperatures compatible with producing high efficiency solar cells. Most of the photogenerated carriers are created in the walls where they are within a few microns of the collecting junction. Consequently, degradation of carrier diffusion length due to radiation has a considerably reduced effect on collection efficiency. These 2 cm x 2 cm vertical junction silicon solar cells have exceeded 13% AMO efficiency and have shown superior radiation resistance.
The motivation for developing GaAs solar cells is based on their superior efficiency when compared to silicon cells, their lower degradation with increasing temperature, and the expectation for better resistance to space radiation damage. The AMO efficiency of GaAs solar cells was calculated. A key consideration in the HRL technology is the production of GaAs cells of large area (greater than 4 sg cm) at a reasonable cost without sacrificing efficiency. An essential requirement for the successful fabrication of such cells is the ability to grow epitaxially a uniform layer of high quality GaAs (buffer layer) on state-of-the-art GaAs substrates, and to grow on this buffer layer the required than layer of (AlGa)As. A modified infinite melt liquid phase epitaxy (LPE) growth technique is detailed.
A number of modern solar cell types representing 1976 technology (as well as some older types) were irradiated with 1 MeV electrons (and a limited number with 2 MeV electrons and 10 MeV protons). After irradiation, the cells were annealed, with I-V curves measured under AMO at 30 C. The purpose was to provide data to be incorporated in the revision of the solar cell radiation handbook. Cell resistivities ranged from 2 to 20 ohm-cm, and cell thickness from 0.05 to 0.46 mm. Cell types examined were conventional, shallow junction, back surface field (BSF), textured, and textured with BSF.
Ultraviolet damage to the new violet and non-reflective type solar cell assemblies, was studied, and potential advantages of using coverslides with no filters or filters with cut-off wavelengths below 0.35 micron were determined. The experiments consisted of three types of tests on fused silica coverslides with 0.35- and 0.30-micron cut-off filters and no cut-off filters, as well as on ceria-doped microsheet coverslides. Ultraviolet irradiation for over 1500 hours at one sun conditions (AMO) was carried out under vacuum of about 1 million torr. Nearly identical results for non-reflective type cells with 0.35-micro cut-off filters or ceria-doped coverslides were obtained. The 0.30-um filtered cell shows greater than average degradation. The unfiltered cell shows an abrupt drop in the first 20 UVSH and very little subsequent degradation.
This paper proposes a process for inexpensive high performance solar cell fabrication that can be automated for further cost reduction and higher throughputs. The unique feature of the process is the use of oxides as doping sources for simultaneous n(+) junction formation and back p(+) layer, as a mask for metallization and as an in situ AR coating for spectrum matching. Cost analysis is performed to show that significant cost reductions over the conventional process is possible using the proposed scheme and the cost intensive steps are identified which can be further reduced to make the process compatible with the needed price goals of 50 cents/watt. The process was demonstrated by fabricating n(+)-p cells using Arsenic doped oxides. Simple n(+)-p structure cells showed corrected efficiencies of 14.5% (AMO) and 12% with doped oxide as an in situ antireflection coating.