Global eigenvalue method for stability analysis in crossed-field diodes

Castillo, Andres [Stanford University]; Hopkins, Matthew M. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000296207190); Dwivedi, Anubhav [Stanford University]; Bennett, Nichelle Lee [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000318532091); Hara, Kentaro [Stanford University]

doi:10.1063/5.0315763

DOE OSTI · 3683730

Global eigenvalue method for stability analysis in crossed-field diodes

Castillo, Andres [Stanford University]·Hopkins, Matthew M. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000296207190)·Dwivedi, Anubhav [Stanford University]·Bennett, Nichelle Lee [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000318532091)·Hara, Kentaro [Stanford University]

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Castillo, Andres [Stanford University], Hopkins, Matthew M. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000296207190), Dwivedi, Anubhav [Stanford University], Bennett, Nichelle Lee [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000318532091), Hara, Kentaro [Stanford University]. 2026-03-01. Global eigenvalue method for stability analysis in crossed-field diodes. https://doi.org/10.1063/5.0315763

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