DOE OSTI · 3365460
Fractional quantization in insulators from Hall to Chern
Abstract
The discovery of the integer and fractional quantum Hall effects naturally prompted the question of whether these effects can be realized without a magnetic field. Answering this is fundamentally important and requires a synthesis of the concepts of band topology, quantum geometry and electronic correlations. Here we summarize the basic concepts of both fractional Chern and fractional topological insulators and illustrate them with the theoretical lattice models that support the flat Chern bands in which the states were first predicted. We then examine their experimental realizations in twisted bilayer transition metal dichalcogenides and moiré rhombohedral few-layer graphene. Here, we also discuss the future challenges and opportunities in this research field.
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Bernevig, B. A. [Princeton University, NJ (United States); Donostia International Physics Center (Spain); IKERBASQUE, Basque Foundation for Science, Bilbao (Spain)] (ORCID:0000000163374024), Fu, Liang [Massachusetts Institute of Technology, Cambridge, MA (United States)] (ORCID:0000000288031017), Ju, Long [Massachusetts Institute of Technology, Cambridge, MA (United States)] (ORCID:0000000246911315), MacDonald, A. H. [University of Texas at Austin, TX (United States)] (ORCID:0000000335613379), Mak, Kin Fai [Max Planck Institute for the Structure and Dynamics of Matter, Hamburg (Germany); Cornell University, Ithaca, NY (United States); Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY (United States)] (ORCID:000000025768199X), Shan, Jie [Max Planck Institute for the Structure and Dynamics of Matter, Hamburg (Germany); Cornell University, Ithaca, NY (United States); Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY (United States)] (ORCID:0000000312709386). 2025-11-07. Fractional quantization in insulators from Hall to Chern. https://doi.org/10.1038/s41567-025-03072-8
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