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DOE OSTI · 3013279

Wide-Bandgap Semiconductor Amplifiers for Fusion Plasma Heating and Control

Abstract

This paper discusses power electronics developed under the ARPA-E GAMOW program to support nuclear fusion power production. The goal of this project was to develop and assess the potential for wide-bandgap (WBG) semiconductor devices in power electronics to enable high-efficiency and high-voltage solid-state systems for fusion plasma generation, heating, and control. The power electronics use an architecture in which multiple high-power boards can be combined to produce megawatt-level power, where using multiple boards provides high reliability. Two main areas of power electronics boards are developed in this project for fusion plasma heating and control applications: (1) pulse generation and control and (2) radiofrequency generation. The first area is for boards capable of driving high-voltage millisecond pulses at high duty cycles. The envisioned application of these pulses is in plasma control of magnetohydrodynamic instabilities, plasma position, and edge-localized modes. Pulse-width modulation allows for the implementation of a wide variety of linear and nonlinear control systems. The boards developed for this project could actuate control coils based on digital input signals and can be parallelized to provide megawatts of output power. The design of the pulse generator is a low-side load switch. A load switch was designed and constructed that utilized 2-kV-rated field-effect transistor (FET)-based cascodes developed by Qorvo under this project to perform initial testing of these cascodes. The second area is being implemented using class E amplifiers with WBG devices and a reactance steering network to handle inductive or capacitive plasma loads. Applications include ion cyclotron resonance heating (ICRH) and high-harmonic fast-wave (HHFW) heating. A class E reactance steering network is demonstrated in modeling and experiment with a resistive-inductive load that models an inductively-coupled plasma. Power combining of boards with class E reactance steering networks is also simulated and demonstrated experimentally, to enable scaling up to high power. Modeling of high-power-density cooling and remaining useful life is conducted to enable reliable, effectively cooled high-power electronics for fusion applications.

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BibTeXRIS

Paluszek, Michael [Princeton Fusion Systems], Galea, Christopher [Princeton Fusion Systems], Mo, Joyce [Princeton Fusion Systems], Punjabi-Vinoth, Sangeeta [Princeton Fusion Systems], Chen, Minjie [Princeton University], Sen, Tanuj [Princeton University], Narumanchi, Sreekant [National Renewable Energy Lab., Golden, CO (United States)] (ORCID:0000000153376069), Feng, Xuhui [National Renewable Energy Lab., Golden, CO (United States)] (ORCID:0000000261559356), Moreno, Gilbert [National Renewable Energy Lab., Golden, CO (United States)] (ORCID:0000000335654242), Losee, Peter [Qorvo], Filer, Shannon [Princeton University], Mohsen, Layla [Princeton Fusion Systems], Feng, Rena [Princeton University], Epstein, Kailey [Massachusetts Institute of Technology], Venkatesh, Srinidhi [Massachusetts Institute of Technology], Stutz, Rachel [Stanford University], Beyer, Jacob [Princeton University], Frank, Alexandra [Princeton University]. 2025-10-02. Wide-Bandgap Semiconductor Amplifiers for Fusion Plasma Heating and Control. https://doi.org/10.1080/15361055.2025.2540212

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