DOE OSTI · 2538596
Analysis of a New Implicit Solver for a Semiconductor Model
Abstract
Here, we present and analyze a new iterative solver for implicit discretizations of a simplified Boltzmann--Poisson system. The algorithm builds on recent work that incorporated a sweeping algorithm for the Vlasov--Poisson equations as part of nested inner-outer iterative solvers for the Boltzmann--Poisson equations. The new method eliminates the need for nesting and requires only one transport sweep per iteration. It arises as a new fixed-point formulation of the discretized system which we prove to be contractive for a given electric potential. We also derive an accelerator to improve the convergence rate for systems in the drift-diffusion regime. We numerically compare the efficiency of the new solver, with and without acceleration, against a recently developed nested iterative solver.
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DeCaria, Victor P., Hauck, Cory D., Laiu, Ming Paul. 2021-06-10. Analysis of a New Implicit Solver for a Semiconductor Model. https://doi.org/10.1137/20m1365922
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