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The Critical Influence of Spin–Dry Technique on the Surface Passivation Quality of Crystalline Silicon Solar Cell Structures

Kumar, Vibhor [Rutgers University, Piscataway, NJ (United States); Texas A & M University, College Station, TX (United States)]·Gao, Munan [Rutgers University, Piscataway, NJ (United States); Canadian Solar Inc., Guelph, ON (Canada)]·Zin, Ngwe [Rutgers University, Piscataway, NJ (United States)] (ORCID:0000000224065074)
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Abstract

This study examines the effects of spin-dry (SD) and N 2 blow-dry (ND) techniques on the quality and surface passivation performance of silicon oxide grown in ozone-dissolved deionized water. The SD method achieves greater oxide thickness uniformity, averaging 1.39 nm ± 4.17% across 49 points, compared to 1.68 nm ± 21.67% for the ND wafers. However, persistently poor passivation of ozonated oxide-grown wafers following the SD process is exhibited, with carrier lifetime, τ eff < 0.3 ms and saturation current density, J 0 (per side) ranging from 26 to 45 fA cm 2 . These findings are analyzed in the context of the fundamental phenomena involved in the drying processes of both techniques. Following this, an optimized spin-drying process is developed, resulting in improved τ eff and J 0 values of 1.4 ms and 5.6 fA cm –2 , respectively. Scanning electron microscopy further confirms that the oxide films dried with the enhanced SD technique are free of pinholes.

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14 SOLAR ENERGYcarrier lifetime and saturation current densitydissolved ozone oxide DI–O3field-effect passivationspin-dry

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Kumar, Vibhor [Rutgers University, Piscataway, NJ (United States); Texas A &amp; M University, College Station, TX (United States)], Gao, Munan [Rutgers University, Piscataway, NJ (United States); Canadian Solar Inc., Guelph, ON (Canada)], Zin, Ngwe [Rutgers University, Piscataway, NJ (United States)] (ORCID:0000000224065074). 2024-12-18. The Critical Influence of Spin–Dry Technique on the Surface Passivation Quality of Crystalline Silicon Solar Cell Structures. https://doi.org/10.1002/pssr.202400314

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