Power Module Precursors and Prognostics

Khan, Faisal; Zhao, Shuofeng (ORCID:0000000208021979)

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DOE OSTI · 2440618

Power Module Precursors and Prognostics

Khan, Faisal·Zhao, Shuofeng (ORCID:0000000208021979)

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Abstract

The ongoing work involves 1) the identification and evaluation of various electric signals as indicators to module failure and precursors to aging, and 2) the development of corresponding detection techniques. In the current phase, 1) the increase of on-state resistance is selected as the precursor to the power cycle aging of silicon carbide power MOSFET modules based on review and rest data. 2) A detection method leveraging the gate voltage fluctuations magnitude during commutation transients to inform the on-state resistance increase is investigated which has the benefit of being able to be integrated into the gate driver. A dedicated detection circuit for implementation is designed and simulated and is currently in fabrication.

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ADVANCED PROPULSION SYSTEMS gate driver gate voltage on-state resistance power MOSFET module precursor to aging

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Khan, Faisal, Zhao, Shuofeng (ORCID:0000000208021979). 2024-09-05. Power Module Precursors and Prognostics. https://www.osti.gov/biblio/2440618

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