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DOE OSTI · 1997464

Self-Assembled Monolayer Procedure to Pattern Silicon Passivated Contacts

Abstract

We utilize hexamethyldisilazane (HMDS)-based self-assembled monolayers to pattern polysilicon (polySi) passivated contacts. We find process conditions that allow for etching frontside n/polySi between fingers, thereby increasing Jsc. Importantly, the Voc does not degrade indicating the additional process steps do not introduce defects or impurities. HMDS layers remain on the surface for metallization without detriment to transport.

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BibTeXRIS

Nemeth, William, Young, David L., Page, Matthew R., LaSalvia, Vincenzo, Theingi, San, Stradins, Pauls. 2023-08-25. Self-Assembled Monolayer Procedure to Pattern Silicon Passivated Contacts. https://www.osti.gov/biblio/1997464

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