Radiation detector

Roy, Utpal N.; James, Ralph B.; Camarda, Giuseppe; Cui, Yonggang; Hossain, Anwar; Yang, Ge; Pradhan, Aswini; Mundle, Rajeh

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DOE OSTI · 1600383

Radiation detector

Roy, Utpal N.·James, Ralph B.·Camarda, Giuseppe·Cui, Yonggang·Hossain, Anwar·Yang, Ge·Pradhan, Aswini·Mundle, Rajeh

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Abstract

Technologies are described for semiconductor radiation detectors. The semiconductor radiation detectors may comprise a semiconductor material. The semiconductor material may include a first surface and a second surface. The first surface may be opposite from the second surface. The semiconductor material may include at least one metal component. The semiconductor material may be effective to absorb radiation and induce a current pulse in response thereto. The semiconductor radiation detector may comprise an electrode contact. The electrode contact may include a metal doped oxide deposited on the first surface of the semiconductor material. The metal doped oxide may include the metal component element of the semiconductor material.

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BibTeX RIS

Roy, Utpal N., James, Ralph B., Camarda, Giuseppe, Cui, Yonggang, Hossain, Anwar, Yang, Ge, Pradhan, Aswini, Mundle, Rajeh. 2019-12-10. Radiation detector. https://www.osti.gov/biblio/1600383

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