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DOE OSTI · 1576316

Ion trapping for quantum information processing

Nordquist, Christopher·Berry, Christopher W.·Maunz, Peter Lukas Wilhelm·Blain, Matthew G.·Sterk, Jonathan David·Resnick, Paul J.·Rembetski, John F.
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Abstract

A platform for trapping atomic ions includes a substrate and a plurality of metallization layers that overlie the substrate. The metallization layer farthest from the substrate is a top layer patterned with electrostatic control trap electrodes and radio-frequency trap electrodes. Another metallization layer is a microwave layer patterned to define a microwave circuit. The microwave layer lies below the top layer. The microwave circuit is adapted to generate, in use, a microwave magnetic field above the electrostatic control and radio-frequency trap electrodes. The top metallization layer includes slots that, in use, are penetrated by microwave energy from the microwave circuit.

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97 MATHEMATICS AND COMPUTING

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Nordquist, Christopher, Berry, Christopher W., Maunz, Peter Lukas Wilhelm, Blain, Matthew G., Sterk, Jonathan David, Resnick, Paul J., Rembetski, John F.. 2019-09-17. Ion trapping for quantum information processing. https://www.osti.gov/biblio/1576316

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