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DOE OSTI · 1543281

Nonlinear Planar Hall Effect

He, Pan·Zhang, Steven S. -L.·Zhu, Dapeng·Shi, Shuyuan·Heinonen, Olle G.·Vignale, Giovanni·Yang, Hyunsoo
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Abstract

An intriguing property of a three-dimensional (3D) topological insulator (TI) is the existence of surface states with spin-momentum locking, which offers a new frontier of exploration in spintronics. In this work, we report the observation of a new type of Hall effect in a 3D TI $\mathrm{Bi_2Se_3}$ film. The Hall resistance scales linearly with both the applied electric and magnetic fields and exhibits a $\pi/2$ angle offset with respect to its longitudinal counterpart, in contrast to the usual angle offset of $\pi/4$ between the linear planar Hall effect and the anisotropic magnetoresistance. This novel nonlinear planar Hall effect originates from the conversion of a nonlinear transverse spin current to a charge current due to the concerted actions of spin-momentum locking and time-reversal symmetry breaking, which also exists in a wide class of noncentrosymmetric materials with a large span of magnitude. Finally, it provides a new way to characterize and utilize the nonlinear spin-to-charge conversion in a variety of topological quantum materials.

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He, Pan, Zhang, Steven S. -L., Zhu, Dapeng, Shi, Shuyuan, Heinonen, Olle G., Vignale, Giovanni, Yang, Hyunsoo. 2019-07-01. Nonlinear Planar Hall Effect. https://doi.org/10.1103/physrevlett.123.016801

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