DOE OSTI · 1154656
Off-axis silicon carbide substrates
Abstract
A method of epitaxial growth of a material on a crystalline substrate includes selecting a substrate having a crystal plane that includes a plurality of terraces with step risers that join adjacent terraces. Each terrace of the plurality or terraces presents a lattice constant that substantially matches a lattice constant of the material, and each step riser presents a step height and offset that is consistent with portions of the material nucleating on adjacent terraces being in substantial crystalline match at the step riser. The method also includes preparing a substrate by exposing the crystal plane; and epitaxially growing the material on the substrate such that the portions of the material nucleating on adjacent terraces merge into a single crystal lattice without defects at the step risers.
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Edgar, James, Dudley, Michael, Kuball, Martin, Zhang, Yi, Wang, Guan, Chen, Hui, Zhang, Yu. 2014-09-02. Off-axis silicon carbide substrates. https://www.osti.gov/biblio/1154656
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