NASA NTRS · 20110015903
Single photon detection with self-quenching multiplication
Abstract
A photoelectronic device and an avalanche self-quenching process for a photoelectronic device are described. The photoelectronic device comprises a nanoscale semiconductor multiplication region and a nanoscale doped semiconductor quenching structure including a depletion region and an undepletion region. The photoelectronic device can act as a single photon detector or a single carrier multiplier. The avalanche self-quenching process allows electrical field reduction in the multiplication region by movement of the multiplication carriers, thus quenching the avalanche.
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Zheng, Xinyu, Cunningham, Thomas J., Pain, Bedabrata. 2011-09-20. Single photon detection with self-quenching multiplication. https://ntrs.nasa.gov/citations/20110015903
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