Growth method for chalcongenide phase-change nanostructures

Abstract

A method for growth of an alloy for use in a nanostructure, to provide a resulting nanostructure compound including at least one of Ge.sub.xTe.sub.y, In.sub.xSb.sub.y, In.sub.xSe.sub.y, Sb.sub.xTe.sub.y, Ga.sub.xSb.sub.y, Ge.sub.xSb.sub.y,Te.sub.z, In.sub.xSb.sub.yTe.sub.z, Ga.sub.xSe.sub.yTe.sub.z, Sn.sub.xSb.sub.yTe.sub.z, In.sub.xSb.sub.yGe.sub.z, Ge.sub.wSn.sub.xSb.sub.yTe.sub.z, Ge.sub.wSb.sub.xSe.sub.yTe.sub.z, and Te.sub.wGe.sub.xSb.sub.yS.sub.z, where w, x, y and z are numbers consistent with oxidization states (2, 3, 4, 5, 6) of the corresponding elements. The melt temperatures for some of the resulting compounds are in a range 330-420.degree. C., or even lower with some compounds.