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NASA NTRS · 20090042373

A Wide Range Temperature Sensor Using SOI Technology

Abstract

Silicon-on-insulator (SOI) technology is becoming widely used in integrated circuit chips for its advantages over the conventional silicon counterpart. The decrease in leakage current combined with lower power consumption allows electronics to operate in a broader temperature range. This paper describes the performance of an SOIbased temperature sensor under extreme temperatures and thermal cycling. The sensor comprised of a temperature-to-frequency relaxation oscillator circuit utilizing an SOI precision timer chip. The circuit was evaluated under extreme temperature exposure and thermal cycling between -190 C and +210 C. The results indicate that the sensor performed well over the entire test temperature range and it was able to re-start at extreme temperatures.

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BibTeXRIS

Patterson, Richard L., Elbuluk, Malik E., Hammoud, Ahmad. 2009-05-24. A Wide Range Temperature Sensor Using SOI Technology. https://ntrs.nasa.gov/citations/20090042373

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