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NASA NTRS · 20060028860

InAs quantum dot lasers on InP substrate

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Qiu, Y., Uhl, D., Chacon, R., Yang, R. Q.. 2003-08-12. InAs quantum dot lasers on InP substrate. https://ntrs.nasa.gov/citations/20060028860

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Lasing characteristics of InAs quantum dot laers on InP substrate

Single-stack InAs self-assembled quantum dots (QD) lasers based on InP substrate have been grown by metalorganic vapor phase epitaxy. The narrow ridge waveguide lasers lased up to 260 K in continuous wave operation, and near room temperature in pulsed mode, with wavelengths between 1.59 to 1.74 mu m.

quantum dot semiconductor laser↗