NASA NTRS · 19920070542
InP concentrator solar cells
Abstract
The design, fabrication, and characterization of high-performance, n(+)/p InP shallow-homojunction (SHJ) concentrator solar cells are described. The InP device structures were grown by atmospheric-pressure metalorganic vapor phase epitaxy. A preliminary assessment of the effects of grid-collection distance and emitter-sheet resistance on cell performance is presented. At concentration ratios of around 100, cells with efficiencies of 21.4 percent AM0 (24.3 percent direct) at 25 C are fabricated. These are the highest efficiencies yet reported for single-junction InP solar cells. The performance of these cells as a function of temperature is discussed, and areas for future improvement are outlined. Application of these results to other InP-based photovoltaic devices is discussed.
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Ward, J. S., Wanlass, M. W., Coutts, T. J., Emery, K. A., Osterwald, C. R.. 1991-01-01. InP concentrator solar cells. https://ntrs.nasa.gov/citations/19920070542
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