Optically addressed asymmetric Fabry-Perot modulator

Abstract

A low power, high contrast optically addressed modulator, operating with normal incidence, has been fabricated. Optically controlled reflection modulation is achieved through optically induced absorption modulation in a periodically delta-doped InGaAs/GaAs multiple quantum well structure inserted in an integrated asymmetric Fabry-Perot resonator. A contrast ratio over 60:1 was measured using a spectrally matched low power InGaAs/GaAs quantum well laser to generate the write (control) signal. The insertion loss for the normally off modulator is 4.6 dB at the highest write signal power (30 mW) used. The device lends itself to the fabrication of arrays for optically addressed spatial light modulation.