High efficiency Ka-band MMIC amplifiers

Abstract

This paper describes recent progress in the Ka-band MMIC power amplifier program. New materials, material growth techniques, device designs and circuit design techniques have made it possible to design and fabricate MMIC amplifiers with both high efficiency and high power at Ka-band and higher frequencies. MMIC amplifiers using pseudomorphic AlGaAs/InGaAs/GaAs HEMT devices presently achieve 400 mW with 25 percent efficiency at Ka-band and 1 W, 35 percent efficient amplifiers are being developed.