NASA NTRS ยท 19910008990
Thin film characterization using spectroscopic ellipsometry
Abstract
The application of the multiple angle and wavelength (MAW) technique to measure the dielectric function of semiconducting films is discussed. This technique evaluates unambiguously the complex dielectric function, epsilon (E), of the film without any pre-assumptions. In some cases the effective medium approximation (EMA) was used to determine the volume fraction of the film components. Application of the MAW technique to several semiconducting films was published previously. Different applications and examples are given, including metal and insulator films.
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Alterovitz, Samuel A.. 1990-06-01. Thin film characterization using spectroscopic ellipsometry. https://ntrs.nasa.gov/citations/19910008990
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