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NASA NTRS ยท 19910008990

Thin film characterization using spectroscopic ellipsometry

Abstract

The application of the multiple angle and wavelength (MAW) technique to measure the dielectric function of semiconducting films is discussed. This technique evaluates unambiguously the complex dielectric function, epsilon (E), of the film without any pre-assumptions. In some cases the effective medium approximation (EMA) was used to determine the volume fraction of the film components. Application of the MAW technique to several semiconducting films was published previously. Different applications and examples are given, including metal and insulator films.

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BibTeXRIS

Alterovitz, Samuel A.. 1990-06-01. Thin film characterization using spectroscopic ellipsometry. https://ntrs.nasa.gov/citations/19910008990

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