NASA NTRS · 19910000192
Improved Planar Schottky Diode
Abstract
Modifications of design and fabrication of surface-channel planar Schottky diode (GSC-13063) reduce parasitic capacitances to theoretical minimum, eliminate buried layer of conductive material between anode contact and semi-insulating substrate, and reduce thickness of diode chip. Changes in epitaxial layer structure and additional fabrication steps reduce conversion loss in millimeter and submillimeter mixers.
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Bishop, William, Mattauch, Robert. 1991-05-01. Improved Planar Schottky Diode. https://ntrs.nasa.gov/citations/19910000192
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