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NASA NTRS ยท 19880000156

MOSFET Electric-Charge Sensor

Abstract

Charged-particle probe compact and consumes little power. Proposed modification enables metal oxide/semiconductor field-effect transistor (MOSFET) to act as detector of static electric charges or energetic charged particles. Thickened gate insulation acts as control structure. During measurements metal gate allowed to "float" to potential of charge accumulated in insulation. Stack of modified MOSFET'S constitutes detector of energetic charged particles. Each gate "floats" to potential induced by charged-particle beam penetrating its layer.

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BibTeXRIS

Robinson, Paul A., Jr.. 1988-03-01. MOSFET Electric-Charge Sensor. https://ntrs.nasa.gov/citations/19880000156

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