NASA NTRS · 19870000376
Energy-Saving RAM-Power Tap
Abstract
Reverse-flow HEXFET(R) minimizes voltage drop and power dissipation. HEXFET(R) scheme reduces voltage drop by approximately 80 percent. Design for power tap for random-access memory (RAM) has potential application in digital systems.
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Bruner, Alan Roy. 1987-09-01. Energy-Saving RAM-Power Tap. https://ntrs.nasa.gov/citations/19870000376
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