NASA NTRS · 19870000110
MOSFET's for Cryogenic Amplifiers
Abstract
Study seeks ways to build transistors that function effectively at liquid-helium temperatures. Report discusses physics of metaloxide/semiconductor field-effect transistors (MOSFET's) and performances of these devices at cryogenic temperatures. MOSFET's useful in highly sensitive cryogenic preamplifiers for infrared astronomy.
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Dehaye, R., Ventrice, C. A.. 1987-03-01. MOSFET's for Cryogenic Amplifiers. https://ntrs.nasa.gov/citations/19870000110
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