NASA NTRS · 19860000311
Tailorable Infrared Sensing Devices
Abstract
Alternating layers of GexSi1.x and Si deposited by molecular beam epitaxy. When electric field applied across stack, acts as detector for infrared photons. Device fabricated on silicon substrate together with sophisticated very-large-scale integrated circuitry. Useful for wide range of applications related to robotics, space exploration, and terrestrial surveillance.
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Cheng, L. J.. 1986-07-01. Tailorable Infrared Sensing Devices. https://ntrs.nasa.gov/citations/19860000311
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