NASA NTRS · 19850000170
Latchup in CMOS Integrated Circuits
Abstract
Sensitivity to ion beams is studied. Latchup effect subject of paper presenting results of testing 19 types of complementary metal-oxide semiconductor (CMOS) chips from six manufacturers. Report gives details of sensitivity of chips to latchup caused by argon and krypton ion beams. Identifies parasitic npnp paths and proides latchup cross section and qualitative explanation of latchup sensitivity for each chip type.
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Soliman, K. A., Nichols, D. K.. 1985-10-01. Latchup in CMOS Integrated Circuits. https://ntrs.nasa.gov/citations/19850000170
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